Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms, treatments, or sequelae of disease. The phorbol esters described are particularly useful in the treatment of neoplastic diseases and/or managing the side effects of chemotherapeutic and radiotherapeutic treatments of neoplastic diseases.

Abstract: A first composition comprising a first ethylene/?-olefin/diene interpolymer and a second ethylene/?-olefin interpolymer, and wherein the first composition comprises from 0.1 to 1.0 wt % diene, based on the weight of the first composition, and wherein the first composition comprises from 40 to 70 wt % ethylene, based on the weight of the first composition.

Abstract: A link protection method in a software-defined networking (SDN), a corresponding switching device and network controller, where the method includes receiving, by a first switching device in the SDN, first information from a network controller in the SDN and link protection information, where the first information establishes a communication link between the first switching device and a destination device, and the link protection information instructs the first switching device to proactively perform primary-to-secondary link switching when a link is faulty, establishing, by the first switching device, the communication link with the destination device according to the first information, and determining, by the first switching device according to the link protection information, that the first switching device proactively performs the primary-to-secondary link switching.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment and prevention of stroke and the sequelae of stroke. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools to treat or prevent stroke and the long term effects of stroke in mammalian subjects.

Abstract: The invention provides a composition comprising at least one oil, and a first composition comprising the following: A) a first composition A comprising an ethylene/?-olefin/non-conjugated diene interpolymer A, B) an ethylene/?-olefin/non-conjugated diene interpolymer B; and wherein the weight ratio of component A to component B is from 1/1 to 20/1; wherein the Mw of the ethylene/?-olefin/non-conjugated diene B is greater than the Mw of the first composition A; and wherein the composition has a Mooney Viscosity (ML1+4, 100 C) from 20 to 100.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms or sequelae of disease. Chronic and acute conditions may be due to viral infections such as HIV and AIDS, neoplastic diseases stroke, kidney disease, urinary incontinence, autoimmune disorders, Parkinson's disease, prostate hypertrophy, aging, or the treatment of such diseases. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools against acute and chronic conditions in mammalian subjects.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms, treatments, or sequelae of disease. The phorbol esters described are particularly useful in the treatment of neoplastic diseases and/or managing the side effects of chemotherapeutic and radiotherapeutic treatments of neoplastic diseases.

Abstract: One illustrative device disclosed herein includes an epi cavity formed in a semiconductor substrate adjacent a gate structure of a transistor and an epi semiconductor material comprising first and second portions. The first portion of the epi semiconductor material is positioned within the epi cavity. The second portion of the epi semiconductor material is positioned above the first portion of the epi semiconductor material and above a level corresponding to a level of an upper surface of the semiconductor substrate. The first portion of the epi semiconductor material has a first dimension in a direction corresponding to a gate length direction of the transistor and the second portion of the epi semiconductor material has a second dimension in a direction corresponding to the gate length direction of the transistor, wherein the first dimension is greater than the second dimension.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms or sequalae of disease. Chronic and acute conditions may be due to viral infections such as HIV and AIDS, neoplastic diseases stroke, kidney disease, urinary incontinence, autoimmune disorders, Parkinson's disease, prostate hypertrophy, aging, or the treatment of such diseases. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools against acute and chronic conditions in mammalian subjects.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a spacer with laminate liner and methods of manufacture. The structure includes: a replacement metal gate structure; a laminate low-k liner on the replacement metal gate structure; and a spacer on the laminate low-k liner.

Abstract: A composition comprises (A) an ethylene/alpha-olefin/diene interpolymer; (B) a peroxide comprising at least one peroxide bond; and (C) a bis-TEMPO compound having the Structure (I), wherein R1-4 are each independently H or a C1-C6 alkyl group; X is S, O, N, P, Se, a carbonyl group, a carboxyl group, an amide group, an azo group, an imino group, a carbamate group, a peroxy group, a phosphono group, a phosphate group, a sulfonyl group, a sulfinyl group, a sulfonate ester group, a sulfonate ester group, or combinations thereof; Y is a substitute or unsubstituted aliphatic alkyl group or aromatic alkyl group, a heterocyclic group, a siloxane group, an ethylene glycol group, an imide group, or combinations thereof; and n is greater than 1. The ratio of the molar amount of nitroxide groups of component (C) to the molar amount of the peroxide bonds of component (B) is from 0.100:1.000 to 2.000:1.000.

Abstract: A composition is composed of (A) an ethylene/alpha-olefin/diene TEMPO compound having the Structure (I) and (D) a peroxide. The molar ratio of isocyanate groups of Component (B) to the functional groups of Component (C) is from 0.80 to 1.10. A composition is composed of (A) an ethylene/alpha-olefin/diene interpolymer; a second composition comprising a reaction mixture comprising (B) an isocyanate comprising at least two isocyanate groups and (C) a TEMPO compound having the Structure (I) and (D) a peroxide, wherein the molar ratio of isocyanate groups of Component (B) to the functional groups of Component (C) is from 0.80 to 1.10. In Structure I, R1, R2, R3 and R4 are each independently selected from H and C1-C6 alkyl groups and X is a functional group selected from OH and NH2.

Abstract: The invention provides a composition comprising a first composition, comprises a first ethylene/alpha-olefin/non-conjugated diene interpolymer, and wherein the first composition comprises the following properties: a) a molecular weight distribution MWD(conv)?3.50, and b) a [(Mz)/(tan delta (0.1 rad/sec, 190° C.))]?250,000 g/mole.

Abstract: One illustrative device disclosed herein includes an epi cavity formed in a semiconductor substrate adjacent a gate structure of a transistor and an epi semiconductor material comprising first and second portions. The first portion of the epi semiconductor material is positioned within the epi cavity. The second portion of the epi semiconductor material is positioned above the first portion of the epi semiconductor material and above a level corresponding to a level of an upper surface of the semiconductor substrate. The first portion of the epi semiconductor material has a first dimension in a direction corresponding to a gate length direction of the transistor and the second portion of the epi semiconductor material has a second dimension in a direction corresponding to the gate length direction of the transistor, wherein the first dimension is greater than the second dimension.

Abstract: Embodiments of the present disclosure provide a failure protection method based on a ring protection link, a device, and a system, and nodes in the ring protection link include a forwarding device in an SDN. The method includes: receiving, by a network controller, a high-priority failure message sent by a first node, where the failure message includes information used to indicate a failure; obtaining, according to the failure message, data information about port state changes that are of the nodes and that are caused by the failure; and sending a high-priority switching message to each of the nodes, so that each of the nodes updates a local MAC address table according to the switching message, where the switching message includes the data information about port state changes that are of the nodes and that are caused by the failure.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a spacer with laminate liner and methods of manufacture. The structure includes: a replacement metal gate structure; a laminate low-k liner on the replacement metal gate structure; and a spacer on the laminate low-k liner.

Abstract: A control method includes sending, by a controller, a created context-aware model to a context-aware engine. The context-aware model is used to define a preset control performed when target data meets a trigger condition and to instruct the context-aware engine to send indication information to the controller when the context-aware engine determines that the target data meets the trigger condition. The preset control is used to implement a context-aware function. The indication information is used to indicate that the target data meets the trigger condition. The method also includes receiving, by the controller, the indication information. The method further includes performing, by the controller, the preset control based on the indication information.

Abstract: A shock absorbing screw includes a locking member, a friction member sleeved on the locking member, and a connecting frame sleeved on the friction member. The shock absorbing screw is connected to a hard disk by a connecting portion of the shock absorbing screw. An abutting portion of the shock absorbing screw is connected to the friction member. The connecting portion is passed through a second through hole defined in the friction member. A first end of the connecting frame includes a first clamping portion, a second end of the connecting frame includes a second clamping portion, and a second groove is defined between the first clamping portion and the second clamping portion. The shock absorbing screw is connected to a hard disk frame in the second groove. The friction member is connected to the connecting frame through a first through hole defined in the connecting frame.

Abstract: In conjunction with a replacement metal gate (RMG) process for forming a fin field effect transistor (FinFET), gate isolation methods and associated structures leverage the formation of distinct narrow and wide gate cut regions in a sacrificial gate. The formation of a narrow gate cut between closely-spaced fins can decrease the extent of etch damage to interlayer dielectric layers located adjacent to the narrow gate cut by delaying the deposition of such dielectric layers until after formation of the narrow gate cut opening. The methods and resulting structures also decrease the propensity for short circuits between later-formed, adjacent gates.