Abstract: An energy gathering device and an ultrasonic humidifier relate to a field of humidifier technology. The energy gathering device includes an energy gathering tube and an energy gathering floating body. The energy gathering device is arranged in a mist outlet tube. The mist outlet tube is disposed inside a water tank of an ultrasonic humidifier. The energy gathering floating body includes an energy gathering cavity. A first end of the energy gathering cavity is communicated with a second end of the energy gathering cavity. An extension direction of the energy gathering cavity is same as an extension direction of a tube cavity of the mist outlet tube. The energy gathering tube is fixed in the energy gathering cavity. A tube cavity of the energy gathering tube is communicated with the energy gathering cavity of the energy gathering floating body.

Abstract: The present application relates to a mask structure, a semiconductor structure and methods for manufacturing the same. The method for manufacturing a mask structure includes: dividing an overall structure into two regions, and developing the array region and the periphery region with a negative photoresist.

Abstract: An optical system includes an optical film curved about a first axis and a light control film curved about the first axis and substantially coextensive with the optical film. The optical film includes a first layer including a microstructured first major surface where the microstructured first major surface defines a linear Fresnel lens including a plurality of Fresnel elements extending along the first axis. The first major surface of the optical film faces the light control film. The light control film includes a plurality of spaced apart optically absorptive regions extending along the first axis and along a direction substantially normal to a major surface of the light control film. At least one of the optical film or at least one layer disposed between the optical film and the light control film includes at least one reflection mitigation element.

Abstract: Embodiments include transistor-outline packages, methods, optical sub-assemblies, and optical modules associated therewith. In some embodiments a transistor-outline package includes a transistor base, a transistor cap, a first lens, a light filtering assembly, a lens assembly, a first optical receiving chip, and a second optical receiving chip. The transistor base and the transistor cap are fastened to form an accommodation cavity. The first lens is disposed on the transistor cap, and the first optical receiving chip and second optical receiving chip are disposed on the transistor base. The lens assembly includes a second lens and a third lens. The light filtering assembly is disposed between the first lens and the lens assembly. The transistor-outline package receives and collimates a first light ray by using the first lens on the transistor cap, and the light filtering assembly splits the first light ray into a second light ray and a third light ray.

Abstract: An optical system includes a light source, an optical film curved about a first axis, and a light control film curved about the first axis and disposed between the light source and the optical film. The optical film includes a microstructured first major surface and an opposing second major surface. The microstructured first major surface defines a linear Fresnel lens including a plurality of Fresnel elements extending longitudinally along the first axis. The first major surface of the optical film faces the light control film. The light control film includes a plurality of alternating optically transmissive and optically absorptive regions extending longitudinally along the first axis such that in a cross-section orthogonal to the first axis, for at least a majority of the optically transmissive regions, a centerline between adjacent optically absorptive regions is substantially normal to a major surface of the light control film.

Abstract: A method for site-specific conjugation of nucleic acid to a CRISPR family protein, and a conjugate thereof and the use thereof. The site-specific conjugation method comprises: mutating a CRISPR family protein site-specifically with an unnatural amino acid, and then conjugating a nucleic acid to the mutated CRISPR family protein, wherein the unnatural amino acid has orthogonal chemical reactivity. The CRISPR family protein site-specifically mutated and the conjugate thereof of the present application can be used to improve gene cutting, gene editing efficiency and base editing efficiency, etc.

Abstract: A display system includes an extended illumination source, a first liquid crystal assembly disposed on the extended illumination source, and a second liquid crystal assembly disposed on the first liquid crystal display assembly. The first liquid crystal assembly includes a bottom reflective polarizer, a top reflective polarizer, and a bottom liquid crystal panel disposed between the top and bottom reflective polarizers. The second liquid crystal assembly includes a top absorbing polarizer, and a top liquid crystal panel disposed between the top absorbing polarizer and the first liquid crystal assembly.

Abstract: A method for manufacturing a semiconductor structure includes: a substrate is provided, in which the substrate is provided with a peripheral area and an array area; an insulation layer is formed on the substrate; a first mask layer with a first mask pattern is formed on the insulation layer; the insulation layer is etched by taking the first mask layer as a mask, to form a contact hole in the array area; a first electrode layer is formed; a second mask layer with a second mask pattern is formed, in which the second mask layer is arranged on the first electrode layer; and the first electrode layer and the first mask layer are etched by taking the second mask layer as a mask until the insulation layer in the array area is exposed, in which a remaining portion of the first electrode layer forms a lower electrode layer.

Abstract: Embodiments of the present disclosure provide a patterning method and a semiconductor structure. The method includes: providing a substrate, wherein the substrate includes adjacent storage regions and peripheral circuit regions; forming, on the substrate, a pattern transfer layer, the pattern transfer layer having a plurality of first hard masks, wherein the first hard masks extend along a first direction and are spaced apart from each other; forming a barrier layer on the pattern transfer layer; forming, on the barrier layer, a plurality of second hard masks, the plurality of second hard masks extending along a second direction, wherein the second hard masks are spaced apart from each other, and the second hard masks are located in the storage regions and second hard masks close to the peripheral circuit regions have structural defects.

Abstract: A micro-molybdenum-type weathering bridge steel plate disclosed by the present invention is characterized in that the steel plate is smelted from the following components by weight: C: 0.05-0.08%, Si: 0.30-0.50%, Mn: 1.25-1.35%, P: 0.010-0.014%, S?0.003%, Nb: 0.020-0.030%, Ti: 0.010-0.020%, V: 0.040-0.050%, Cu: 0.25-0.40%, Ni: 0.25-0.35%, Cr: 0.45-0.55%, Mo: 0.03-0.08%, Alt: 0.020-0.040%, and the balance from Fe and impurities. Less content of molybdenum reduces the production cost of the steel plate, the yield strength of the steel plate is 500-600 MPa, the yield strength ratio is ?0.85, and the maximum thickness of the steel plate can reach 80 mm.

Abstract: This application relates to the field of liquid cooling technologies, and provides a gas collection apparatus, configured to collect bubbles generated due to loss of a working medium in a liquid cooling apparatus. The gas collection apparatus includes a cooling plate. The cooling plate includes at least one gas collection structure disposed inside the cooling plate, a first flow channel disposed inside the cooling plate, a second flow channel disposed inside the gas collection structure, and at least one connecting channel configured to connect the first flow channel and the second flow channel. The at least one connecting channel is configured to transfer, to the second flow channel, bubbles carried when the working medium flows in the first flow channel. The at least one gas collection structure is configured to collect the bubbles from the second flow channel.

Abstract: The present invention discloses a rare earth permanent magnet material and a preparation method thereof. The method includes a sintering treatment step performed by laying a composite powder for diffusion on the surface of a neodymium iron boron magnetic powder layer and carrying out spark plasma sintering treatment to obtain a neodymium iron boron magnet with a diffusion layer solidified on the surface thereof, and diffusion heat treatment and tempering steps. The method of the present invention has high efficiency, good diffusion effects, and reduced quantities of heavy rare earth elements.

Abstract: A method for manufacturing a semiconductor structure includes: a first mask layer is formed on a dielectric layer, in which a first etching hole extending along a first direction parallel to the dielectric layer is formed in the first mask layer; a side of the first mask layer away from the dielectric layer is planarized; a second mask layer is formed on the first mask layer, in which a second etching hole extending along a second direction parallel to the dielectric layer is formed in the second mask layer, the first etching hole and the second etching hole constitute an etching hole; and the dielectric layer is etched along the etching hole to form the capacitor hole.

Abstract: A method includes: a terminal device that detects a first operation of a user, obtains, in response to the first operation, context information corresponding to a current scenario of the terminal device, generates the first advertisement request based on the context information, sends the first advertisement request to an advertisement server, obtains first advertisement information that is fed back by the advertisement server and that indicates first advertisement content, and displays the first advertisement content based on the first advertisement information, where the context information is associated with the first advertisement content.

Abstract: Embodiments of the present disclosure provide a fastener for a server cabinet and the server cabinet. The fastener for the server cabinet includes an upper limit member, a fastening spring, a lower limit member, and a fastening pin rod. The present disclosure relates to the field of server cabinet technology. The fastener for the server cabinet provided in the present disclosure is small in volume, compact and reliable in structure, stable in fastening, and suitable for fastening connection in narrow space. The fastener may easily achieve fastening or unfastening operation by rotating 90° without restriction of a rotation direction, which is fast in installation and convenient for disassembly and assembly.

Abstract: An optical film includes a structured film and a light control film formed on the structured film. The structured film includes a substrate and a plurality of polymeric microstructures formed on a major surface of the substrate. Each microstructure includes an optical facet and a sidewall meeting the optical facet at a ridge of the microstructure. The light control film includes an optically transparent material disposed on and covering the plurality of polymeric microstructures, and a plurality of optically absorptive louvers formed in the optically transparent material opposite the structured film. The louvers extend along a longitudinal direction and are spaced apart along an orthogonal transverse direction. The louvers have an average depth D into the optically transparent material and have an average width W in the transverse direction. D/W can be greater than 2. The optical film is integrally formed.

Abstract: The present disclosure discloses a capacitor structure and its formation method and a memory. The method includes: providing a substrate; forming an electrode support structure on the substrate in a stacking fashion, wherein the electrode support structure includes at least a first support layer on its top, a capacitor hole is formed at intervals within the electrode support structure and extends upwards in a direction perpendicular to a surface of the substrate; forming, within the capacitor hole, an electrode post and an electrode layer extending from the electrode post to the upper surface of the first support layer; removing the electrode layer; removing the first support layer; forming a dielectric layer on the top of the electrode support structure, wherein the dielectric layer covers the top of the electrode post, and an outer peripheral wall of the top of the electrode post is connected with the dielectric layer.