Abstract: Provided are a data processing method and a data processing apparatus based on a user profile, a device, a medium, and a program. The method includes: acquiring multiple pieces of user data and a generation time of a last piece of user data; generating, each time a piece of first user data is read from the pieces of user data, a user feature corresponding to the first user data; storing the user feature corresponding to the first user data into a target database when a generation time of the first user data is consistent with the generation time of the last piece of user data; otherwise, not storing the user feature corresponding to the first user data into the target database; and generating a user profile based on the user feature in the target database.

Abstract: A folding bathtub includes a bathtub body and a supporting body. The supporting body is provided with a support frame and support legs, the support legs are connected with the support frame, and the support frame is supported by the support legs. The support frame is detachably connected with the bathtub body, and the bathtub body is supported by the support frame, so that the support frame can be connected with the bathtub body when the bathtub body needs to be used by a user, the bathtub body is supported by the support legs and the support frame, and the bathtub body is prevented from being deformed to be convenient for the user to use.

Abstract: The present invention discloses a set of SNP markers related to heat tolerance of Pisum sativum developed based on a SnaPshot technology, and use thereof. In the present invention, 2,358 accessions of Pisum sativum germplasms from all over the world are subjected to a heat tolerance screening experiment by employing a manner of sowing by stages, and a reasonable Pisum sativum heat-tolerant classifying standard is established through identification of yield-related traits, so that a Pisum sativum germplasm population including heat-tolerant and heat-sensitive germplasms is obtained; and the population is subjected to genetic diversity and population genetic structure analysis through a set of SNP markers (20 markers) related to heat tolerance of Pisum sativum developed based on an SNaPshot technology, so as to provide theoretical and practical basis for the future study of heat-tolerant genetic mechanism and heat-tolerant breeding of Pisum sativum.

Abstract: A preparation method for a tungsten sulfide (WS2) solid lubricating film based on high power impulse magnetron sputtering (HiPIMS) is provided. The preparation method includes the following steps: step 1: depositing a metal conductive film on a surface of a WS2 target; step 2: using magnetic field sputtering to remove the metal conductive film in a target sputtering area on the surface of the WS2 target, thereby obtaining a first WS2 target; and step 3: performing the HiPIMS on the first WS2 target to obtain the WS2 solid lubricating film. The preparation method can achieve stable glow discharge of a WS2 target and use the high deposition energy of HiPIMS to prepare the WS2 solid lubricating film with high compactness and excellent wear resistance.

Abstract: Embodiments of the present disclosure relate to hybrid beamforming. A plurality of time delay elements is used to perform analog beamforming. Each time delay element is configured to apply the same time delay at different frequencies. The plurality of time delay elements is coupled to at least one RF chain to receive signals. Each antenna in an antenna array is configured to be selectively connected to one of the plurality of time delay elements based on a target configuration of a connection between the plurality of time delay elements and the antenna array. In operation, the target configuration is determined based on time delay information concerning the plurality of time delay elements and channel information concerning a physical channel over which the signals are to be transmitted.

Abstract: The present disclosure relates to techniques for prediction of reservoir fluid properties of a hydrocarbon reservoir fluid, such as the density, the saturation pressure, the formation volume factor and the gas-oil ratio of the reservoir fluid. To predict the reservoir fluid properties, a model is generated by selecting a subset of available reservoir samples based on a degree of biodegradation of the samples, generating an input data set comprising input data and target data, the input data comprising measured or predicted mud-gas data; and generating a model using the input data. The application of this technique allows a continuous log of the selected property to be generated using mud-gas data collected during the well drilling process.

Abstract: A method for fabricating a GAA nanosheet structure, comprising: forming at least two channel layers and at least one sacrificial layer alternately stacked on a substrate to form a channel stack; forming, on the substrate, a dummy gate astride the channel stack; forming a first sidewall on a surface of the dummy gate; etching the sacrificial layer to form a recess at a side surface of the channel stack; forming a second sidewall within the recess; forming a source and a drain at two sides of the channel stack; in response to a channel layer being in contact with the dummy gate, etching the dummy gate and the channel layer to expose the at least one sacrificial layer, and then etching the at least one sacrificial layer to form a space for manufacturing a surrounding gate; and forming a metallic surrounding gate in the space.

Abstract: In certain aspects, a memory device includes a vertical transistor including a semiconductor body extending in a first direction, a stack structure including interleaved dielectric layers and conductive layers each extending perpendicularly to the first direction, an electrode layer including a conductive material and coupled to a first end of the semiconductor body, and a storage layer over the electrode layer. The electrode layer and the storage layer extend in the first direction through the stack structure.

Abstract: Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive layer on a substrate; forming a dielectric stack on the bottom conductive layer, the dielectric stack comprising a plurality of alternatively arranged first dielectric layers and second dielectric layers; forming an opening penetrating the dielectric stack and exposing the bottom conductive layer; forming a cap layer on a bottom of the opening; forming a cylindrical body and a top contact on the cap layer and in the opening; and replacing the plurality of second dielectric layers with conductive layers.

Abstract: A preparation method for a tungsten sulfide (WS2) solid lubricating film based on high power impulse magnetron sputtering (HiPIMS) is provided. The preparation method includes the following steps: step 1: depositing a metal conductive film on a surface of a WS2 target; step 2: using magnetic field sputtering to remove the metal conductive film in a target sputtering area on the surface of the WS2 target, thereby obtaining a first WS2 target; and step 3: performing the HiPIMS on the first WS2 target to obtain the WS2 solid lubricating film. The preparation method can achieve stable glow discharge of a WS2 target and use the high deposition energy of HiPIMS to prepare the WS2 solid lubricating film with high compactness and excellent wear resistance.

Abstract: A method for data erasing of a non-volatile memory device is disclosed. The memory includes multiple memory cell strings each including a select gate transistor and multiple memory cells that are connected in series. The method comprises applying a step erase voltage to one memory cell string for an erase operation, the step erase voltage having a step-rising shaped voltage waveform. The method further comprises, during a period when the step erase voltage rises from an intermediate level to a peak level, raising a voltage of the select gate transistor from a starting level to a peak level, and raising a voltage of a predetermined region from a starting level to a peak level, such that a gate-induced drain leakage current is generated in the one memory cell string. The predetermined region is adjacent to the at least one select gate transistor and includes at least one memory cell.

Abstract: A wear-resistant coating with a low friction coefficient of aluminum titanium nitride-tungsten disulfide (AlTiN—WS2) and a preparation method are provided. The preparation method includes: (1) performing a titanium ion cleaning on a preprocessed substrate by using a titanium ion arc target to obtain a cleaned substrate; (2) depositing a titanium transition coating on the cleaned substrate by using a multi-arc ion plating to obtain a deposited substrate; (3) depositing an aluminum titanium nitride (AlTiN) coating on the deposited substrate by using an AlTi alloy ion arc target to obtain an AlTiN coating substrate; and (4) depositing a titanium coating and a tungsten disulfide (WS2) coating by using a high power impulse magnetron sputtering (HiPIMS) to obtain the wear-resistant coating of AlTiN—WS2. The wear-resistant coating is prepared by pre-depositing the AlTiN solid coating using the multi-arc ion plating, and followed by depositing the WS2 solid lubrication coating using HiPIMS.

Abstract: A three-dimensional (3D) memory device includes a first memory cell, a second memory cell, a control gate between the first and second memory cells, a top contact coupled to the first memory cell, and a bottom contact coupled to the second memory cell. The first memory cell can include a first pillar, a first insulating layer surrounding the first pillar, a first gate contact coupled to a first word line, and a second gate contact coupled to a first plate line. The second memory cell can include a second pillar, a second insulating layer surrounding the second pillar, a third gate contact coupled to a second word line, and a fourth gate contact coupled to a second plate line. The 3D memory device can utilize dynamic flash memory (DFM), increase storage density, provide multi-cell storage, provide a three-state logic, decrease leakage current, increase retention time, and decrease refresh rates.

Abstract: A nail gun having an energy storage mechanism for storing energy used for striking nails out of the nail gun, the energy storage mechanism comprises a guiding rod attached to a fixed plate assembly; a piston disposed on the guiding rod; a striking member mounted on the piston for striking the nails; at least one power spring disposed around an outer periphery of the guiding rod; a guide sleeve moveably disposed around the outer periphery of the guiding rod and between the power spring and the guiding rod; wherein a first end of the power spring abuts against the piston and is configured to be compressed to store energy.

Abstract: An intra-aortic dual balloon driving pump catheter device is disclosed, including a controlling part adapted to control air pumps to inflate and deflate a first balloon and a second balloon according to a cardiac cycle and an arterial pressure of the catheter end monitored by a monitoring part, such that in diastole the first balloon inflates while the second balloon deflates, and in systole the first balloon deflates while the second balloon inflates, wherein the second balloon deflates and inflates conversely to the synchronized inflation and deflation of the first balloon respectively, the first balloon fully inflates in diastole and fully deflates in systole, and the second balloon fully deflates in diastole and can inflate in systole only to a predetermined percentage of its volume of full inflation.

Abstract: Provided in the present disclosure are a method for deploying cloud service, electronic device, and storage medium. The method includes: determining available computing resources in a computing resource pool in response to a deploying request for a target cloud service; determining a target computing node with most available computing resources; determining whether the target computing node meets a deploying condition of the target cloud service; when the target computing node does not meet the deploying condition, selecting a standby computing node group from computing node groups other than the target computing node group, and combining the standby computing node group into the target computing node group, and re-determining a target computing node with most available computing resources in the target computing node group; and when the target computing node meets the deploying condition, deploying the target cloud service on the target computing node.

Abstract: The invention discloses a charging gun that can realize changeable color according to temperature change and a preparation method thereof, relating to the field of charging gun, including a gun head with one end provided with silicone waterproof pad, the rear side of silicone waterproof pad is connected with terminal cover; interior of said terminal cover is connected with terminals, and outer side of the terminals are provided with terminal rubber coatings, one end of said terminals is connected with a terminal wiring harness. The invention realizes changeable color block different from the material used elsewhere, which adopts PC and temperature-sensitive material mixed injection molding, in the charging process of charging gun, phenomenon of heat will occur in the event of improper use or poor contact, at this time temperature change can be perceived through color change of gun shell so as to confirm using state of charging gun.

Abstract: Methods of designing integrated circuits incorporating an analog ECO flow are provided. An example method comprises receiving an initial design and performing an auto-marker process. The auto-marker process comprises performing a first auto-marker process to surround a first plurality of active cells of the design with first computer-aided design (CAD) layers corresponding to a first plurality of engineering change order (ECO) cells, performing an enhanced auto-marker process to cover irregular shapes of the design with second CAD layers corresponding to a second plurality of ECO cells, and performing a second auto-marker process to fill empty areas of the design with third CAD layers corresponding to a third plurality of ECO cells. The method further includes filling the design with the first plurality of ECO cells, the second plurality of ECO cells, and the third plurality of ECO cells.