Abstract: Provided in the present disclosure are a method for deploying cloud service, electronic device, and storage medium. The method includes: determining available computing resources in a computing resource pool in response to a deploying request for a target cloud service; determining a target computing node with most available computing resources; determining whether the target computing node meets a deploying condition of the target cloud service; when the target computing node does not meet the deploying condition, selecting a standby computing node group from computing node groups other than the target computing node group, and combining the standby computing node group into the target computing node group, and re-determining a target computing node with most available computing resources in the target computing node group; and when the target computing node meets the deploying condition, deploying the target cloud service on the target computing node.

Abstract: A nail gun having a striking member installation mechanism comprises a casing having a main casing body, and a striking member baffle removably disposed over a replacement opening of the main casing body; a striking member removably disposed inside the main casing body and below the striking member baffle; and a striking member driving assembly having a piston for driving the striking member in a reciprocating motion direction, wherein the striking member has a striking member tail, a protruding part, and a guiding striking part; wherein the piston comprises a striking member connector having a protruding part receiving hole; and wherein the protruding part is removably received in the protruding part receiving hole.

Abstract: The present invention relates to a strong-yet-ductile chemically complex alloy over a wide temperature range, including nickel, cobalt, iron, chromium, aluminum, titanium, tantalum, niobium, tungsten, molybdenum, and one or more infinitesimal elements. The strong-yet-ductile chemically complex alloy forms one or more multi-scale L12 particles within a grain interior and exhibits serrated grain boundaries via controlling a heat treatment process. The aluminum, titanium, tantalum and niobium facilitate the formation of the one or more multi-scale L12 particles, the tungsten and molybdenum enhances a strength of a FCC matrix of the chemically complex alloy, and the one or more infinitesimal elements improve a cohesive strength of the serrated grain boundaries.

Abstract: The present invention relates to an ultra-strong and ductile multifunctional titanium alloy made from two or more metal elements. The titanium alloy has a molecular formula of TiaZrbHfcNbdSne, a, b, c, d, and e represent atomic percentages of the metal elements, falling within the ranges of 45?a?55, 36?b?43, 3?c?6, 3.5?d?7.5, and 1.5?e?3. The titanium alloy exhibits an initial microstructure characterized by an equiaxed ultra-fine grain (UFG) structure, which is reinforced by hierarchical nanostructures formed during subsequent deformation. By synergistically amalgamating the benefits of superior mechanical performance, pseudoelasticity, and biocompatibility, the alloy is anticipated to emerge as a promising contender for advanced damping devices or shock absorbers within the aerospace and automotive sectors. Additionally, it can be employed as biocompatible implants, including stent grafts or guide wires, in medical applications.

Abstract: Three-dimensional (3D) semiconductor devices and fabricating methods are provided. In some implementations, a disclosed semiconductor device comprises a plurality of vertical transistors, each comprising: a semiconductor layer having a leakage value lower than a pico-ampere and comprising a vertical semiconductor portion and at least one lateral semiconductor portion, a gate dielectric layer comprising a vertical gate dielectric portion on the vertical semiconductor portion and extending in the vertical direction, a gate electrode on the gate dielectric layer and separated from the semiconductor layer by the gate dielectric layer. The disclosed semiconductor device further comprises a plurality of capacitors each coupled with the semiconductor layer of a corresponding one of the plurality of vertical transistors.

Abstract: A protein scaffold capable of carrying radioactive signals and application thereof in antibody detection are provided. The present disclosure successfully finds out a protein scaffold R12 capable of carrying radioactive signals, which is used for assisting part of antigens to capture corresponding antibodies; and because the method is used for carrying signals and eliminating more severe screening conditions of cross reaction in the screening process, the method is not limited to the method in application, and the method can be directly used for a technical platform which only needs to eliminate the cross reaction.

Abstract: The present invention relates to a solid precipitation apparatus and a solid precipitation process, wherein said apparatus and said process, particularly when used for the desalination of a high-salinity wastewater, can meet the requirement of stable operation for a long period, can realize efficient removal of salts from the wastewater, and solve the problems of difficult desalination of high-salinity wastewater, easy blockage, and the like. The solid precipitation apparatus comprises a housing, an inlet for a stream, a discharging outlet, and a support disposed in an inner chamber of said housing, wherein the configuration of said support is suitable for a solid substance to be deposited and loaded thereon.

Abstract: The present invention relates to a technique for delivering an antibody to the brain or a tumor tissue. The present invention provides a modified antibody that is targeted. The present invention provides an inactivated antibody that is targeted, wherein the antibody is a modified antibody that is reactivated in the brain or a tumor tissue.

Abstract: A method of identifying a location of gas breakthrough within a completed production well includes: obtaining production composition data and/or tracer data from the production well; analysing the production composition data and/or tracer data to determine whether gas breakthrough has occurred within the production well; and in response to determining that gas breakthrough has occurred within the production well, examining mud-gas data collected during drilling of the production well to identify a gas breakthrough location within the well where the gas breakthrough has occurred.

Abstract: Provided is a drive circuit including a power supply circuit, an adapter circuit board, and a voltage regulation circuit. The power supply circuit is coupled to the adapter circuit board and configured to transmit a power supply voltage to the adapter circuit board. The adapter circuit board is coupled to the plurality of light-emitting elements by wirings and configured to transmit the power supply voltage to each of the light-emitting elements. The voltage regulation circuit is coupled to the power supply circuit and configured to regulate, according to an ideal operating voltage corresponding to an operating current of each of the light-emitting elements under a target grayscale and a wiring voltage drop on the wiring coupled to each of the light-emitting elements, a magnitude of the power supply voltage output by the power supply circuit, in the case that the display panel displays a picture of the target grayscale.

Abstract: A driving method for a display panel and a display apparatus. The driving method includes: obtaining original display data of a current display frame; and when it is determined to adopt a first driving mode, loading first gate scanning signals (GA1_1-GA12_1) to gate lines (GA, GA1-GA12) in the display panel, and loading a data voltage to data lines (DA, DA1-DA7) in the display panel according to target display data obtained by removing a part of data from the original display data, so as to charge each sub-pixel in the display panel with the data voltage.

Abstract: A display substrate, including: a base substrate; a plurality of data lines on the base substrate; a first insulating layer on a side of the plurality of data lines away from the base substrate; a plurality of gate lines on a side of the first insulating layer away from the plurality of data lines, where extension directions of the gate and data lines are intersected; a second insulating layer on a side of the plurality of gate lines away from the first insulating layer; and a first electrode on a side of the second insulating layer away from the plurality of gate lines, where at least a portion of an orthographic projection of the first electrode on the base substrate is within an region surrounded by orthographic projections of two adjacent data lines on the base substrate and orthographic projections of two adjacent gate lines on the base substrate.

Abstract: The present disclosure provides a memory with a three-dimensional vertical structure and a manufacturing method. The memory includes: a semiconductor substrate, a first isolation layer, a first transistor and a second transistor. The first transistor includes a first source layer, a second isolation layer, a first drain layer, a third isolation layer, and a first through hole penetrating to the first source layer. A first active layer, a first gate dielectric layer and a first gate layer are on an inner sidewall of the first through hole. The second transistor includes a fourth isolation layer, a second source layer, a fifth isolation layer, and a second through hole penetrating to the first gate layer. A second active layer, a second gate dielectric layer and a second gate layer are on an inner sidewall of the second through hole. The second through hole is surrounded by the first through hole.

Abstract: Techniques are disclosed for generating anomaly scores for a neuro-linguistic model of input data obtained from one or more sources. According to one embodiment, generating anomaly scores includes receiving a stream of symbols generated from an ordered stream of normalized vectors generated from input data received from one or more sensor devices during a first time period. Upon receiving the stream of symbols, generating a set of words based on an occurrence of groups of symbols from the stream of symbols, determining a number of previous occurrences of a first word of the set of words, determining a number of previous occurrences of words of a same length as the first word, and determining a first anomaly score based on the number of previous occurrences of the first word and the number of previous occurrences of words of the same length as the first word.

Abstract: Disclosed are a method for data distribution, a system, an operation and control device and a terminal device. The method may include receiving an Internet Protocol (IP) packet from a data acquisition and control module; wherein, the IP packet carries a data packet; acquiring a destination address of the data packet; performing Virtual extensible Local-Area Network (VXLAN) encapsulation on the data packet, according to the destination address, to acquire a VXLAN packet; and sending the VXLAN packet to a server.

Abstract: A method of creating a ductile, work-hardened, nanotwinned, austenite/martensite nano-lamellar nanostructure in an austenite steel alloy. Briefly, raw materials with high-purity are smelted to obtain an as-cast steel alloy ingot, which will be subjected to homogenization and cold-roll treatment for reduction. The homogenized and cold-rolled steel alloy ingot is further recrystallized to eliminate any possible casting defects and form an as-recrystallized steel alloy having a single face-centered cubic structure with recrystallized grains. The as-recrystallized steel alloy is cold-rolled again for forming a nanotwinned austenite structure and for forming martensite lamellae along nanotwin boundaries such that an austenite/martensite nano-lamellar structure in the steel alloy.

Abstract: The present disclosure provides a melt electrospinning device. The melt electrospinning device includes a melting unit, a spinning unit, an electrostatic generating unit, a collection unit, and a sealed cavity. A lining of the melting unit is made of a material having a melting point greater than 500° C. The spinning unit is connected to the bottom of the melting unit and includes a spinneret made from a conductive material having a melting point greater than 500° C. The melt electrospinning process is performed in the sealed cavity. The present disclosure further provides a melt electrospinning method.