Abstract: A magnetic measurement device has a magnetic sensor including a glass cell having alkali metal gas encapsulated therein that is configured to detect a magnetic field using a magneto-optical characteristic of spin-polarized alkali metal. A laser light source is configured to generate pump light introduced into the magnetic sensor and a coil provided in the same magnetically shielded space as the magnetic sensor is configured to apply a static magnetic field and a RF magnetic field to the magnetic sensor. A signal processor is configured to perform lock-in detection of a light detection signal transmitted through the glass cell of the magnetic sensor, control an intensity of the static magnetic field and a frequency of the RF magnetic field generated by the coil according to a lock-in detection output, and obtain a measurement signal reflecting a magnetic field intensity of an object to be measured in the magnetically shielded space.

Abstract: An object of the present invention is to provide a technique to improve a manufacturing yield of a gas cell included in a magnetic field measuring apparatus. A gas cell GC according to an embodiment is characterized in that, for example, a cavity CAV includes an opening OP1 and an opening OP2, a plane size of the opening OP1 becomes larger than a plane size of the opening OP2 in the openings OP1 and OP2 included in the cavity CAV. Especially, according to the embodiment, the opening OP2 is included in the opening OP1 in plan view. Consequently, a width of the opening OP1 coming into contact with an upper surface of the sealing substrate 1S becomes larger than a width of the opening OP2 coming into contact with a lower surface of the sealing substrate 2S.

Abstract: Stable magnetic field measurement is enabled without collapse of polarization or fluctuation of intensity of a laser beam incident on a glass cell of an optical pumping magnetic sensor. Excitation light generated with a light source, having optimized light intensity and polarized wave, through frequency stabilization, intensity control and polarized-wave control, is introduced via a polarized wave holding optical fiber to a magnetic sensor provided in a magnetic shield, and magnetic field measurement is performed by optical pumping using magneto-optical properties of spin-polarized alkali metal. The magnetic sensor has a structure where a lens, a polarization optical device, the glass cell and a photodetector, are integrally accommodated in a non-magnetic case.

Abstract: A magnetic measurement device has a magnetic sensor including a glass cell having alkali metal gas encapsulated therein that is configured to detect a magnetic field using a magneto-optical characteristic of spin-polarized alkali metal. A laser light source is configured to generate pump light introduced into the magnetic sensor and a coil provided in the same magnetically shielded space as the magnetic sensor is configured to apply a static magnetic field and a RF magnetic field to the magnetic sensor. A signal processor is configured to perform lock-in detection of a light detection signal transmitted through the glass cell of the magnetic sensor, control an intensity of the static magnetic field and a frequency of the RF magnetic field generated by the coil according to a lock-in detection output, and obtain a measurement signal reflecting a magnetic field intensity of an object to be measured in the magnetically shielded space.

Abstract: In order to provide a magnetic field measuring apparatus facilitating the pressure control in a gas cell, or capable of inspecting the internal pressure of the gas cell without using any special process, the magnetic field measuring apparatus is configured such that a process layer of the magnetic field measuring apparatus has such a structure that includes a first hollow portion and a second hollow portion provided opposed to first hollow portion with a first isolation wall interposed therebetween. Alternatively, a method for manufacturing the magnetic field measuring apparatus includes breaking the first isolation wall after generating alkali metal (FIG. 17 and FIG. 20).

Abstract: Detection accuracy of a semiconductor device for detecting various kinds of substances including biological matter such as DNA is to be increased. This semiconductor device includes: a channel region CH placed on a first surface of a silicon oxide film 110; source/drain regions placed on both sides of the channel region CH; a gate electrode G placed on the first surface at a distance from the channel region CH, the gate electrode G being located to face a side surface xz1 of the channel region CH; an insulating film Z located between the channel region CH and the gate electrode G; and a pore P extending parallel to the side surface xz1 of the channel region CH, the pore P being perpendicular to the first surface. A test object such as DNA 200 is introduced into the pore P, and field changes caused by the test object in an inversion layer 10 formed in the side surface xz1 of the channel region CH is detected as changes in the current flowing between the source/drain regions.

Abstract: In order to provide a magnetic field measuring apparatus facilitating the pressure control in a gas cell, or capable of inspecting the internal pressure of the gas cell without using any special process, the magnetic field measuring apparatus is configured such that a process layer of the magnetic field measuring apparatus has such a structure that includes a first hollow portion and a second hollow portion provided opposed to first hollow portion with a first isolation wall interposed therebetween. Alternatively, a method for manufacturing the magnetic field measuring apparatus includes breaking the first isolation wall after generating alkali metal (FIG. 17 and FIG. 20).

Abstract: A light pumping magnetic measurement apparatus configured to suppress an influence on a magnetic field from a heater and facilitate reduction in size and integration of a gas cell when heating the gas cell in order to improve a sensitivity of detection of the magnetic field is provided. This measurement apparatus includes a first glass substrate, a substrate 102 having a thermal conductivity higher than glass, and a second glass substrate laminated in this order.

Abstract: Stable magnetic field measurement is enabled without collapse of polarization or fluctuation of intensity of a laser beam incident on a glass cell of an optical pumping magnetic sensor. Excitation light generated with a light source, having optimized light intensity and polarized wave, through frequency stabilization, intensity control and polarized-wave control, is introduced via a polarized wave holding optical fiber to a magnetic sensor provided in a magnetic shield, and magnetic field measurement is performed by optical pumping using magneto-optical properties of spin-polarized alkali metal. The magnetic sensor has a structure where a lens, a polarization optical device, the glass cell and a photodetector, are integrally accommodated in a non-magnetic case.

Abstract: A measurement tool apparatus for evaluating degradation of pattern features in a semiconductor device manufacturing process. The measurement tool apparatus detects variations in the patterns from SEM images thereof and extracts pattern edge points along the circumference of each pattern. The measurement tool apparatus compares the pattern edge points to corresponding edge points of an ideal shape so as to determine deviation of the patterns. Metrics are derived from analysis of the deviations. The measurement tool apparatus uses the metrics in calculating an index representative of the geometry of edge spokes of the pattern, an indicator of the orientation of the edge spokes, and/or anticipated effects of the edge spokes on device performance.

Abstract: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

Abstract: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

Abstract: A measurement tool apparatus for evaluating degradation of pattern features in a semiconductor device manufacturing process. The measurement tool apparatus detects variations in the patterns from SEM images thereof and extracts pattern edge points along the circumference of each pattern. The measurement tool apparatus compares the pattern edge points to corresponding edge points of an ideal shape so as to determine deviation of the patterns. Metrics are derived from analysis of the deviations. The measurement tool apparatus uses the metrics in calculating an index representative of the geometry of edge spokes of the pattern, an indicator of the orientation of the edge spokes, and/or anticipated effects of the edge spokes on device performance.

Abstract: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

Abstract: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

Abstract: A random-access non-volatile semiconductor memory device, which does not use individual gate terminals of transistors of memory cells in order to select individual memory cells for read/write operations performed on the device. The gate terminals of the memory cells are all biased to the same voltage during a read or write operation. For example, the gate terminals of the memory cells in the array are electrically connected together. By appropriate control of source and drain voltages during a read or write operation, discrimination can be achieved between selected and non-selected memory cells of the array.

Abstract: Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 ?m, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.

Abstract: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

Abstract: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

Abstract: By decreasing the threshold voltage shift due to the potential change of the cells adjacent in a word line direction, the reliability of a flash memory can be enhanced. Memory cells of a flash memory are formed in p-type wells of a semiconductor substrate and include gate insulator films, floating gates, high-K insulator films, and control gates (word lines). The floating gates and control gates (word lines) are isolated by high-K insulator films. The plurality of memory cells arrayed in row a direction are isolated by isolation trenches extending in a column direction. In the isolation trenches, a silicon oxide film is embedded. In the silicon oxide film, an air gap is provided. A lower end of the air gap extends near to the bottom of the isolation trench, and its upper end extends further above the upper surface of the high-K insulator film covering the floating gate.