Patents by Inventor Tatehito Usui

Tatehito Usui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200335354
    Abstract: Provided is a plasma processing method for plasma etching an etching target film formed on a sample. The method includes a protective film forming step of selectively forming a protective film on an upper portion of a pattern formed on the sample and adjusting a width of the formed protective film such that a distribution of the width of the formed protective film in a surface of the sample becomes a desired distribution, and a step of plasma etching the etching target film after the protective film forming step.
    Type: Application
    Filed: December 17, 2019
    Publication date: October 22, 2020
    Inventors: Miyako Matsui, Kenichi Kuwahara, Tatehito Usui, Hiroyuki Kobayashi
  • Publication number: 20200328099
    Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.
    Type: Application
    Filed: June 26, 2020
    Publication date: October 15, 2020
    Inventors: Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kazunori SHINODA, Tatehito USUI, Naoyuki KOFUJI, Yutaka KOUZUMA, Tomoyuki WATANABE, Kenetsu YOKOGAWA, Satoshi SAKAI, Masaru IZAWA
  • Publication number: 20200273732
    Abstract: A sample simulates a processing state of a semiconductor sample and is measured by a measurement device. The sample includes: a first surface formed at a first height when viewed from a sample surface; a second surface formed at a second height higher than the first height; and a plurality of inflow parts which allow a particle for performing processing on the first surface to flow between the first surface and the second surface. The processing by the particle flowing from the inflow parts is superimposed in at least a part of a region to be processed on the first surface, and the region where the processing is superimposed on the first surface is measured by the measurement device.
    Type: Application
    Filed: December 17, 2019
    Publication date: August 27, 2020
    Inventors: Hyakka NAKADA, Takeshi OHMORI, Tatehito USUI, Masaru KURIHARA, Naoyuki KOFUJI
  • Patent number: 10672595
    Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: June 2, 2020
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Takeshi Ohmori, Daisuke Satou, Tatehito Usui, Satomi Inoue, Kenji Maeda
  • Patent number: 10665516
    Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: May 26, 2020
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Miyako Matsui, Kenichi Kuwahara, Naoki Yasui, Masaru Izawa, Tatehito Usui, Takeshi Ohmori
  • Patent number: 10622269
    Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: April 14, 2020
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Miyako Matsui, Kenichi Kuwahara, Naoki Yasui, Masaru Izawa, Tatehito Usui, Takeshi Ohmori
  • Publication number: 20190369605
    Abstract: A system for determining a processing procedure including a plurality of processes for controlling an object, the system includes a learning unit for performing a learning process for determining a processing condition of each of a plurality of processes, and the learning unit acquires a physical quantity correlating with a state of the object on which a process has been performed under a predetermined processing condition, from a device for controlling the object on the basis of the processing procedure, calculates a pseudo state corresponding to the state of the object on the basis of the physical quantity, performs a learning process using a value function, and determines a processing condition of each of the plurality of processes to achieve a target state of the object.
    Type: Application
    Filed: June 4, 2019
    Publication date: December 5, 2019
    Inventors: Hyakka NAKADA, Takeshi OHMORI, Tatehito USUI, Masaru KURIHARA
  • Patent number: 10453695
    Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: October 22, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Soichiro Eto, Takeshi Ohmori, Tatehito Usui, Satomi Inoue
  • Publication number: 20190237337
    Abstract: In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time.
    Type: Application
    Filed: January 31, 2018
    Publication date: August 1, 2019
    Inventors: Miyako MATSUI, Tatehito USUI, Masaru IZAWA, Kenichi KUWAHARA
  • Publication number: 20190064755
    Abstract: A computer for determining a control parameter of processing to be performed on a sample includes: a memory unit configured to store a first model indicating a correlation between a first processing output obtained by measuring a first sample used for manufacturing, on which the processing is performed and a second processing output obtained by measuring a second sample that is easier to measure than the first sample and on which the processing is performed, and a second model indicating a correlation between a control parameter of the processing performed on the second sample and the second processing output; and an analysis unit configured to calculate a target control parameter of the processing performed on the first sample based on a target processing output as the target first processing output, the first model, and the second model.
    Type: Application
    Filed: April 30, 2018
    Publication date: February 28, 2019
    Inventors: Takeshi OHMORI, Hyakka NAKADA, Masaru KURIHARA, Tatehito USUI, Naoyuki KOFUJI
  • Publication number: 20180277377
    Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.
    Type: Application
    Filed: September 25, 2017
    Publication date: September 27, 2018
    Inventors: Soichiro ETO, Takeshi OHMORI, Tatehito USUI, Satomi INOUE
  • Publication number: 20180269042
    Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.
    Type: Application
    Filed: May 17, 2018
    Publication date: September 20, 2018
    Inventors: Takeshi OHMORI, Daisuke SATOU, Tatehito USUI, Satomi INOUE, Kenji MAEDA
  • Publication number: 20180269118
    Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.
    Type: Application
    Filed: August 30, 2017
    Publication date: September 20, 2018
    Inventors: Miyako MATSUI, Kenichi KUWAHARA, Naoki YASUI, Masaru IZAWA, Tatehito USUI, Takeshi OHMORI
  • Patent number: 10020233
    Abstract: In a plasma processing method and apparatus for processing a film to be processed contained in a film structure preliminarily formed on an upper surface of a wafer mounted in a processing chamber, by using plasma, a residual film thickness at an arbitrary time is calculated using a result of comparing detective differential waveform pattern data with actual differential waveform pattern data. The detective differential waveform pattern data is produced by using two basic differential waveform pattern data which respectively use, as parameters, residual thicknesses of the films to be processed in film structures having underlying films with different thicknesses and the wavelengths of the interference light. The detective waveform pattern data being preliminarily prepared prior to processing of the wafer. Determination is made as to whether or not an object of the processing has been reached by using the residual film thickness.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: July 10, 2018
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Shigeru Nakamoto, Tatehito Usui, Satomi Inoue, Kousa Hirota, Kousuke Fukuchi
  • Patent number: 10008370
    Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: June 26, 2018
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Takeshi Ohmori, Daisuke Satou, Tatehito Usui, Satomi Inoue, Kenji Maeda
  • Publication number: 20180122665
    Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.
    Type: Application
    Filed: September 28, 2017
    Publication date: May 3, 2018
    Inventors: Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kazunori SHINODA, Tatehito USUI, Naoyuki KOFUJI, Yutaka KOUZUMA, Tomoyuki WATANABE, Kenetsu YOKOGAWA, Satoshi SAKAI, Masaru IZAWA
  • Patent number: 9934946
    Abstract: A plasma processing device performing etching processing to a sample disposed in a processing chamber disposed in a vacuum vessel by using plasma formed in the processing chamber includes a light detector, a component detector, and a determination unit. The light detector detects light intensity of a plurality of wavelengths from the inside of the processing chamber at a plurality of times during the sample processing. The component detector detects, by using a result of a principal component analysis of time-series data, a highly correlated component between the time-series data of a plurality of the wavelengths at a certain time in a plurality of the times obtained from output of the light detector. The determination unit determines an amount or an end point of the etching processing based on a change in light intensity of at least one of a plurality of the wavelengths detected by using the time-series data from which the highly correlated component is removed.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: April 3, 2018
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Yohei Kawaguchi, Tatehito Usui, Masahito Togami, Satomi Inoue, Shigeru Nakamoto
  • Patent number: 9865439
    Abstract: A processing apparatus and a processing method for a semiconductor wafer, which allow stable end point detection, are provided. In the plasma processing apparatus or method in which a processing-target film layer of a film structure including a plurality of film layers formed in advance on a surface of a wafer mounted on a sample stage deployed within a processing chamber inside a vacuum vessel, by using plasma formed with the processing chamber, intensities of lights of a plurality of wavelengths are detected using data composed of results of reception of lights during a plurality of different time-intervals by an optical receiver which receives lights of the plurality of wavelengths from an inside of the processing chamber while processing is going.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: January 9, 2018
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Shigeru Nakamoto, Tatehito Usui, Satomi Inoue, Kousuke Fukuchi
  • Publication number: 20170372878
    Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.
    Type: Application
    Filed: August 15, 2017
    Publication date: December 28, 2017
    Inventors: Masahito TOGAMI, Tatehito USUI, Kosa HIROTA, Satomi INOUE, Shigeru NAKAMOTO
  • Publication number: 20170358504
    Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.
    Type: Application
    Filed: August 9, 2017
    Publication date: December 14, 2017
    Inventors: Tatehito USUI, Kosa HIROTA, Satomi INOUE, Shigeru NAKAMOTO, Kousuke FUKUCHI