Patents by Inventor Tatehito Usui
Tatehito Usui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20200328099Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.Type: ApplicationFiled: June 26, 2020Publication date: October 15, 2020Inventors: Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kazunori SHINODA, Tatehito USUI, Naoyuki KOFUJI, Yutaka KOUZUMA, Tomoyuki WATANABE, Kenetsu YOKOGAWA, Satoshi SAKAI, Masaru IZAWA
-
Publication number: 20200273732Abstract: A sample simulates a processing state of a semiconductor sample and is measured by a measurement device. The sample includes: a first surface formed at a first height when viewed from a sample surface; a second surface formed at a second height higher than the first height; and a plurality of inflow parts which allow a particle for performing processing on the first surface to flow between the first surface and the second surface. The processing by the particle flowing from the inflow parts is superimposed in at least a part of a region to be processed on the first surface, and the region where the processing is superimposed on the first surface is measured by the measurement device.Type: ApplicationFiled: December 17, 2019Publication date: August 27, 2020Inventors: Hyakka NAKADA, Takeshi OHMORI, Tatehito USUI, Masaru KURIHARA, Naoyuki KOFUJI
-
Patent number: 10672595Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.Type: GrantFiled: May 17, 2018Date of Patent: June 2, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Takeshi Ohmori, Daisuke Satou, Tatehito Usui, Satomi Inoue, Kenji Maeda
-
Patent number: 10665516Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.Type: GrantFiled: August 30, 2017Date of Patent: May 26, 2020Assignee: Hitachi High-Technologies CorporationInventors: Miyako Matsui, Kenichi Kuwahara, Naoki Yasui, Masaru Izawa, Tatehito Usui, Takeshi Ohmori
-
Patent number: 10622269Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.Type: GrantFiled: August 30, 2017Date of Patent: April 14, 2020Assignee: Hitachi High-Technologies CorporationInventors: Miyako Matsui, Kenichi Kuwahara, Naoki Yasui, Masaru Izawa, Tatehito Usui, Takeshi Ohmori
-
Publication number: 20190369605Abstract: A system for determining a processing procedure including a plurality of processes for controlling an object, the system includes a learning unit for performing a learning process for determining a processing condition of each of a plurality of processes, and the learning unit acquires a physical quantity correlating with a state of the object on which a process has been performed under a predetermined processing condition, from a device for controlling the object on the basis of the processing procedure, calculates a pseudo state corresponding to the state of the object on the basis of the physical quantity, performs a learning process using a value function, and determines a processing condition of each of the plurality of processes to achieve a target state of the object.Type: ApplicationFiled: June 4, 2019Publication date: December 5, 2019Inventors: Hyakka NAKADA, Takeshi OHMORI, Tatehito USUI, Masaru KURIHARA
-
Patent number: 10453695Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.Type: GrantFiled: September 25, 2017Date of Patent: October 22, 2019Assignee: Hitachi High-Technologies CorporationInventors: Soichiro Eto, Takeshi Ohmori, Tatehito Usui, Satomi Inoue
-
Publication number: 20190237337Abstract: In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time.Type: ApplicationFiled: January 31, 2018Publication date: August 1, 2019Inventors: Miyako MATSUI, Tatehito USUI, Masaru IZAWA, Kenichi KUWAHARA
-
Publication number: 20190064755Abstract: A computer for determining a control parameter of processing to be performed on a sample includes: a memory unit configured to store a first model indicating a correlation between a first processing output obtained by measuring a first sample used for manufacturing, on which the processing is performed and a second processing output obtained by measuring a second sample that is easier to measure than the first sample and on which the processing is performed, and a second model indicating a correlation between a control parameter of the processing performed on the second sample and the second processing output; and an analysis unit configured to calculate a target control parameter of the processing performed on the first sample based on a target processing output as the target first processing output, the first model, and the second model.Type: ApplicationFiled: April 30, 2018Publication date: February 28, 2019Inventors: Takeshi OHMORI, Hyakka NAKADA, Masaru KURIHARA, Tatehito USUI, Naoyuki KOFUJI
-
Publication number: 20180277377Abstract: A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in a processing chamber in predetermined cycles and periods and includes a detection control unit for detecting a processing amount of the film layer on the surface of the wafer. The detection control unit includes a light source unit, a detection unit, and a film thickness/depth calculation unit. This detection control unit detects a plurality of times an amount indicating the intensity of light on a sample surface at predetermined cycles during a period in which the plasma is switched off while the wafer is being processed and detects a processing amount of the film layer on the sample surface by using the detected amount indicating the light intensity.Type: ApplicationFiled: September 25, 2017Publication date: September 27, 2018Inventors: Soichiro ETO, Takeshi OHMORI, Tatehito USUI, Satomi INOUE
-
Publication number: 20180269042Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.Type: ApplicationFiled: May 17, 2018Publication date: September 20, 2018Inventors: Takeshi OHMORI, Daisuke SATOU, Tatehito USUI, Satomi INOUE, Kenji MAEDA
-
Publication number: 20180269118Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.Type: ApplicationFiled: August 30, 2017Publication date: September 20, 2018Inventors: Miyako MATSUI, Kenichi KUWAHARA, Naoki YASUI, Masaru IZAWA, Tatehito USUI, Takeshi OHMORI
-
Patent number: 10020233Abstract: In a plasma processing method and apparatus for processing a film to be processed contained in a film structure preliminarily formed on an upper surface of a wafer mounted in a processing chamber, by using plasma, a residual film thickness at an arbitrary time is calculated using a result of comparing detective differential waveform pattern data with actual differential waveform pattern data. The detective differential waveform pattern data is produced by using two basic differential waveform pattern data which respectively use, as parameters, residual thicknesses of the films to be processed in film structures having underlying films with different thicknesses and the wavelengths of the interference light. The detective waveform pattern data being preliminarily prepared prior to processing of the wafer. Determination is made as to whether or not an object of the processing has been reached by using the residual film thickness.Type: GrantFiled: August 30, 2013Date of Patent: July 10, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Shigeru Nakamoto, Tatehito Usui, Satomi Inoue, Kousa Hirota, Kousuke Fukuchi
-
Patent number: 10008370Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.Type: GrantFiled: December 17, 2015Date of Patent: June 26, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Takeshi Ohmori, Daisuke Satou, Tatehito Usui, Satomi Inoue, Kenji Maeda
-
Publication number: 20180122665Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.Type: ApplicationFiled: September 28, 2017Publication date: May 3, 2018Inventors: Hiroyuki KOBAYASHI, Nobuya MIYOSHI, Kazunori SHINODA, Tatehito USUI, Naoyuki KOFUJI, Yutaka KOUZUMA, Tomoyuki WATANABE, Kenetsu YOKOGAWA, Satoshi SAKAI, Masaru IZAWA
-
Patent number: 9934946Abstract: A plasma processing device performing etching processing to a sample disposed in a processing chamber disposed in a vacuum vessel by using plasma formed in the processing chamber includes a light detector, a component detector, and a determination unit. The light detector detects light intensity of a plurality of wavelengths from the inside of the processing chamber at a plurality of times during the sample processing. The component detector detects, by using a result of a principal component analysis of time-series data, a highly correlated component between the time-series data of a plurality of the wavelengths at a certain time in a plurality of the times obtained from output of the light detector. The determination unit determines an amount or an end point of the etching processing based on a change in light intensity of at least one of a plurality of the wavelengths detected by using the time-series data from which the highly correlated component is removed.Type: GrantFiled: September 27, 2016Date of Patent: April 3, 2018Assignee: Hitachi High-Technologies CorporationInventors: Yohei Kawaguchi, Tatehito Usui, Masahito Togami, Satomi Inoue, Shigeru Nakamoto
-
Patent number: 9865439Abstract: A processing apparatus and a processing method for a semiconductor wafer, which allow stable end point detection, are provided. In the plasma processing apparatus or method in which a processing-target film layer of a film structure including a plurality of film layers formed in advance on a surface of a wafer mounted on a sample stage deployed within a processing chamber inside a vacuum vessel, by using plasma formed with the processing chamber, intensities of lights of a plurality of wavelengths are detected using data composed of results of reception of lights during a plurality of different time-intervals by an optical receiver which receives lights of the plurality of wavelengths from an inside of the processing chamber while processing is going.Type: GrantFiled: September 11, 2015Date of Patent: January 9, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Shigeru Nakamoto, Tatehito Usui, Satomi Inoue, Kousuke Fukuchi
-
Publication number: 20170372878Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.Type: ApplicationFiled: August 15, 2017Publication date: December 28, 2017Inventors: Masahito TOGAMI, Tatehito USUI, Kosa HIROTA, Satomi INOUE, Shigeru NAKAMOTO
-
Publication number: 20170358504Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.Type: ApplicationFiled: August 9, 2017Publication date: December 14, 2017Inventors: Tatehito USUI, Kosa HIROTA, Satomi INOUE, Shigeru NAKAMOTO, Kousuke FUKUCHI
-
Patent number: 9805940Abstract: A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has previously been disposed on an upper surface of a wafer that includes a plurality of film layers. The film structure includes: a lower film including at least one film layer and a groove structure; and an upper film including at least one film layer that covers an inside and an upper end of the groove structure. The plasma processing method includes: removing the upper film by etching until an upper end of the groove structure of the lower film is exposed; performing etching to a film layer of the upper film inside the groove structure; and determining an end point by using a value of thickness of the film layer inside the groove structure of the lower film upon completion of the removing.Type: GrantFiled: March 4, 2016Date of Patent: October 31, 2017Assignee: Hitachi High-Technologies CorporationInventors: Kousuke Fukuchi, Shigeru Nakamoto, Tatehito Usui, Satomi Inoue