Patents by Inventor Tathagata Chatterjee
Tathagata Chatterjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11916067Abstract: The present disclosure introduces, among other things, an electronic device, e.g. an integrated circuit (IC). The IC includes a semiconductor substrate comprising a first doped layer of a first conductivity type. A second doped layer of the first conductivity type is located within the first doped layer. The second doped layer has first and second layer portions with a greater dopant concentration than the first doped layer, with the first layer portion being spaced apart from the second layer portion laterally with respect to a surface of the substrate. The IC further includes a lightly doped portion of the first doped layer, the lightly doped portion being located between the first and second layer portions. A dielectric isolation structure is located between the first and second layer portions, and directly contacts the lightly doped portion.Type: GrantFiled: March 2, 2022Date of Patent: February 27, 2024Assignee: Texas Instruments IncorporatedInventors: Robert M. Higgins, Henry Litzmann Edwards, Xiaoju Wu, Shariq Arshad, Li Wang, Jonathan Philip Davis, Tathagata Chatterjee
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Patent number: 11796588Abstract: A system comprises a noise generator circuit and a noise envelope detector circuit. The noise generator circuit comprises a first amplifier including a single transistor pair that is operable to generate 1/f noise, an output amplifier coupled to the first amplifier and configured to generate a 1/f noise signal as a function of the 1/f noise. The noise envelope detector circuit comprises a low pass filter operable to pass low frequency signals of the 1/f noise signal as a filtered 1/f noise signal, and a second amplifier or a comparator coupled to the low pass filter and operable to output a direct current (DC) voltage signal according to an envelope of the filtered 1/f noise signal, where the DC voltage signal is a function of an envelope of the filtered 1/f noise signal.Type: GrantFiled: November 29, 2021Date of Patent: October 24, 2023Assignee: Texas Instruments IncorporatedInventors: Yuguo Wang, Steven Loveless, Tathagata Chatterjee, Jerry Doorenbos
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Publication number: 20220189949Abstract: The present disclosure introduces, among other things, an electronic device, e.g. an integrated circuit (IC). The IC includes a semiconductor substrate comprising a first doped layer of a first conductivity type. A second doped layer of the first conductivity type is located within the first doped layer. The second doped layer has first and second layer portions with a greater dopant concentration than the first doped layer, with the first layer portion being spaced apart from the second layer portion laterally with respect to a surface of the substrate. The IC further includes a lightly doped portion of the first doped layer, the lightly doped portion being located between the first and second layer portions. A dielectric isolation structure is located between the first and second layer portions, and directly contacts the lightly doped portion.Type: ApplicationFiled: March 2, 2022Publication date: June 16, 2022Inventors: Robert M. Higgins, Henry Litzmann Edwards, Xiaoju Wu, Shariq Arshad, Li Wang, Jonathan Philip Davis, Tathagata Chatterjee
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Patent number: 11296075Abstract: The present disclosure introduces, among other things, an electronic device, e.g. an integrated circuit (IC). The IC includes a semiconductor substrate comprising a first doped layer of a first conductivity type. A second doped layer of the first conductivity type is located within the first doped layer. The second doped layer has first and second layer portions with a greater dopant concentration than the first doped layer, with the first layer portion being spaced apart from the second layer portion laterally with respect to a surface of the substrate. The IC further includes a lightly doped portion of the first doped layer, the lightly doped portion being located between the first and second layer portions. A dielectric isolation structure is located between the first and second layer portions, and directly contacts the lightly doped portion.Type: GrantFiled: August 31, 2018Date of Patent: April 5, 2022Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Robert M. Higgins, Henry Litzmann Edwards, Xiaoju Wu, Shariq Arshad, Li Wang, Jonathan Philip Davis, Tathagata Chatterjee
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Publication number: 20220082608Abstract: A system comprises a noise generator circuit and a noise envelope detector circuit. The noise generator circuit comprises a first amplifier including a single transistor pair that is operable to generate 1/f noise, an output amplifier coupled to the first amplifier and configured to generate a 1/f noise signal as a function of the 1/f noise. The noise envelope detector circuit comprises a low pass filter operable to pass low frequency signals of the 1/f noise signal as a filtered 1/f noise signal, and a second amplifier or a comparator coupled to the low pass filter and operable to output a direct current (DC) voltage signal according to an envelope of the filtered 1/f noise signal, where the DC voltage signal is a function of an envelope of the filtered 1/f noise signal.Type: ApplicationFiled: November 29, 2021Publication date: March 17, 2022Inventors: Yuguo Wang, Steven Loveless, Tathagata Chatterjee, Jerry Doorenbos
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Patent number: 11249130Abstract: A system comprises a noise generator circuit and a noise envelope detector circuit. The noise generator circuit comprises a first amplifier including a single transistor pair that is operable to generate 1/f noise, an output amplifier coupled to the first amplifier and configured to generate a 1/f noise signal as a function of the 1/f noise. The noise envelope detector circuit comprises a low pass filter operable to pass low frequency signals of the 1/f noise signal as a filtered 1/f noise signal, and a second amplifier or a comparator coupled to the low pass filter and operable to output a direct current (DC) voltage signal according to an envelope of the filtered 1/f noise signal, where the DC voltage signal is a function of an envelope of the filtered 1/f noise signal.Type: GrantFiled: December 29, 2017Date of Patent: February 15, 2022Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Yuguo Wang, Steven Loveless, Tathagata Chatterjee, Jerry Doorenbos
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Patent number: 10748818Abstract: In various examples, a method and apparatus are provided to achieve dynamic biasing to mitigate electrical stress. Described examples include a device includes a first resistor portion having a first terminal and a second terminal, and a second resistor portion having a third terminal and a fourth terminal. The device also includes a well in a substrate proximate to the first resistor portion and the second resistor portion and an insulating layer between the well and the first resistor portion and the second resistor portion. The device also includes a transistor having a control terminal coupled to the second terminal of the first resistor portion and the third terminal of the second resistor portion, the transistor having a first current-handling terminal coupled to a first voltage and a second current-handling terminal coupled to a current source and to the well.Type: GrantFiled: December 21, 2018Date of Patent: August 18, 2020Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Tathagata Chatterjee, Steven Loveless, James Robert Todd, Andrew Strachan
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Publication number: 20200203230Abstract: In various examples, a method and apparatus are provided to achieve dynamic biasing to mitigate electrical stress. Described examples include a device includes a first resistor portion having a first terminal and a second terminal, and a second resistor portion having a third terminal and a fourth terminal. The device also includes a well in a substrate proximate to the first resistor portion and the second resistor portion and an insulating layer between the well and the first resistor portion and the second resistor portion. The device also includes a transistor having a control terminal coupled to the second terminal of the first resistor portion and the third terminal of the second resistor portion, the transistor having a first current-handling terminal coupled to a first voltage and a second current-handling terminal coupled to a current source and to the well.Type: ApplicationFiled: December 21, 2018Publication date: June 25, 2020Inventors: Tathagata Chatterjee, Steven Loveless, James Robert Todd, Andrew Strachan
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Publication number: 20200075583Abstract: The present disclosure introduces, among other things, an electronic device, e.g. an integrated circuit (IC). The IC includes a semiconductor substrate comprising a first doped layer of a first conductivity type. A second doped layer of the first conductivity type is located within the first doped layer. The second doped layer has first and second layer portions with a greater dopant concentration than the first doped layer, with the first layer portion being spaced apart from the second layer portion laterally with respect to a surface of the substrate. The IC further includes a lightly doped portion of the first doped layer, the lightly doped portion being located between the first and second layer portions. A dielectric isolation structure is located between the first and second layer portions, and directly contacts the lightly doped portion.Type: ApplicationFiled: August 31, 2018Publication date: March 5, 2020Inventors: Robert M. Higgins, Henry Litzmann Edwards, Xiaoju Wu, Shariq Arshad, Li Wang, Jonathan Philip Davis, Tathagata Chatterjee
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Patent number: 10571511Abstract: In at least some embodiments, a system comprises a socket gate terminal configured to receive a first voltage to activate and inactivate a device under test (DUT) coupled to the socket gate terminal. The system also comprises a socket source terminal configured to provide a reference voltage to the DUT. The system further comprises a socket drain terminal configured to provide a second voltage to the DUT to stress the DUT when the DUT is inactive. The socket drain terminal is further configured to receive a third voltage to cause a current to flow through a pathway in the DUT between the socket drain terminal and the socket source terminal when the DUT is active. The socket drain terminal is further configured to provide a fourth voltage indicative of a resistance of the pathway in the DUT when the DUT is active and is heated to a temperature above an ambient temperature associated with the system.Type: GrantFiled: September 13, 2018Date of Patent: February 25, 2020Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Alex Paikin, Colin Johnson, Tathagata Chatterjee, Sameer Pendharkar
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Publication number: 20190204375Abstract: A system comprises a noise generator circuit and a noise envelope detector circuit. The noise generator circuit comprises a first amplifier including a single transistor pair that is operable to generate 1/f noise, an output amplifier coupled to the first amplifier and configured to generate a 1/f noise signal as a function of the 1/f noise. The noise envelope detector circuit comprises a low pass filter operable to pass low frequency signals of the 1/f noise signal as a filtered 1/f noise signal, and a second amplifier or a comparator coupled to the low pass filter and operable to output a direct current (DC) voltage signal according to an envelope of the filtered 1/f noise signal, where the DC voltage signal is a function of an envelope of the filtered 1/f noise signal.Type: ApplicationFiled: December 29, 2017Publication date: July 4, 2019Inventors: Yuguo WANG, Steven LOVELESS, Tathagata CHATTERJEE, Jerry DOORENBOS
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Publication number: 20190181874Abstract: An analog-to-digital converter (ADC) comprising successive approximation circuitry, a capacitive analog-to-digital converter (CDAC), and capacitor mismatch measurement circuitry. The successive approximation circuitry is configured to control conversion of an analog signal to a digital value. The CDAC is coupled to the successive approximation circuitry. The CDAC includes a plurality of capacitors. The capacitor mismatch measurement circuitry is coupled to the CDAC. The capacitor mismatch measurement circuitry includes a first oscillator circuit, a second oscillator circuit, and counter circuitry. The first oscillator circuit is configured to oscillate at a frequency determined by a capacitance of one of the capacitors. The second oscillator circuit is configured to generate a predetermined time interval. The counter circuitry is configured to count a number of cycles of oscillation of the first oscillator in the predetermined time interval.Type: ApplicationFiled: February 4, 2019Publication date: June 13, 2019Inventors: Steven John LOVELESS, Yuguo WANG, Tathagata CHATTERJEE, Robert Stanley GRONDALSKI
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Patent number: 10236900Abstract: An analog-to-digital converter (ADC) comprising successive approximation circuitry, a capacitive analog-to-digital converter (CDAC), and capacitor mismatch measurement circuitry. The successive approximation circuitry is configured to control conversion of an analog signal to a digital value. The CDAC is coupled to the successive approximation circuitry. The CDAC includes a plurality of capacitors. The capacitor mismatch measurement circuitry is coupled to the CDAC. The capacitor mismatch measurement circuitry includes a first oscillator circuit, a second oscillator circuit, and counter circuitry. The first oscillator circuit is configured to oscillate at a frequency determined by a capacitance of one of the capacitors. The second oscillator circuit is configured to generate a predetermined time interval. The counter circuitry is configured to count a number of cycles of oscillation of the first oscillator in the predetermined time interval.Type: GrantFiled: December 11, 2017Date of Patent: March 19, 2019Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Steven John Loveless, Yuguo Wang, Tathagata Chatterjee, Robert Stanley Grondalski
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Publication number: 20190011493Abstract: In at least some embodiments, a system comprises a socket gate terminal configured to receive a first voltage to activate and inactivate a device under test (DUT) coupled to the socket gate terminal. The system also comprises a socket source terminal configured to provide a reference voltage to the DUT. The system further comprises a socket drain terminal configured to provide a second voltage to the DUT to stress the DUT when the DUT is inactive. The socket drain terminal is further configured to receive a third voltage to cause a current to flow through a pathway in the DUT between the socket drain terminal and the socket source terminal when the DUT is active. The socket drain terminal is further configured to provide a fourth voltage indicative of a resistance of the pathway in the DUT when the DUT is active and is heated to a temperature above an ambient temperature associated with the system.Type: ApplicationFiled: September 13, 2018Publication date: January 10, 2019Inventors: Alex PAIKIN, Colin JOHNSON, Tathagata CHATTERJEE, Sameer PENDHARKAR
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Patent number: 10101382Abstract: In at least some embodiments, a system comprises a socket gate terminal configured to receive a first voltage to activate and inactivate a device under test (DUT) coupled to the socket gate terminal. The system also comprises a socket source terminal configured to provide a reference voltage to the DUT. The system further comprises a socket drain terminal configured to provide a second voltage to the DUT to stress the DUT when the DUT is inactive. The socket drain terminal is further configured to receive a third voltage to cause a current to flow through a pathway in the DUT between the socket drain terminal and the socket source terminal when the DUT is active. The socket drain terminal is further configured to provide a fourth voltage indicative of a resistance of the pathway in the DUT when the DUT is active and is heated to a temperature above an ambient temperature associated with the system.Type: GrantFiled: December 30, 2016Date of Patent: October 16, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Alex Paikin, Colin Johnson, Tathagata Chatterjee, Sameer Pendharkar
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Publication number: 20180188313Abstract: In at least some embodiments, a system comprises a socket gate terminal configured to receive a first voltage to activate and inactivate a device under test (DUT) coupled to the socket gate terminal. The system also comprises a socket source terminal configured to provide a reference voltage to the DUT. The system further comprises a socket drain terminal configured to provide a second voltage to the DUT to stress the DUT when the DUT is inactive. The socket drain terminal is further configured to receive a third voltage to cause a current to flow through a pathway in the DUT between the socket drain terminal and the socket source terminal when the DUT is active. The socket drain terminal is further configured to provide a fourth voltage indicative of a resistance of the pathway in the DUT when the DUT is active and is heated to a temperature above an ambient temperature associated with the system.Type: ApplicationFiled: December 30, 2016Publication date: July 5, 2018Inventors: Alex PAIKIN, Colin JOHNSON, Tathagata CHATTERJEE, Sameer PENDHARKAR
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Patent number: 9818740Abstract: An integrated circuit includes an NMOS transistor, a PMOS transistor and a vertical bipolar transistor. The vertical bipolar transistor has an intrinsic base with a band barrier at least 25 meV high at a surface boundary of the intrinsic base, except at an emitter-base junction with an emitter, and except at a base-collector junction with a collector. The intrinsic base may be laterally surrounded by an extrinsic base with a higher dopant density than the intrinsic base, wherein a higher dopant density provides the band barrier at lateral surfaces of the intrinsic base. A gate may be disposed on a gate dielectric layer over a top surface boundary of the intrinsic base adjacent to the emitter. The gate is configured to accumulate the intrinsic base immediately under the gate dielectric layer, providing the band barrier at the top surface boundary of the intrinsic base.Type: GrantFiled: December 5, 2016Date of Patent: November 14, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Weidong Tian, YuGuo Wang, Tathagata Chatterjee, Rajni J. Aggarwal
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Publication number: 20170141101Abstract: An integrated circuit includes an NMOS transistor, a PMOS transistor and a vertical bipolar transistor. The vertical bipolar transistor has an intrinsic base with a band barrier at least 25 meV high at a surface boundary of the intrinsic base, except at an emitter-base junction with an emitter, and except at a base-collector junction with a collector. The intrinsic base may be laterally surrounded by an extrinsic base with a higher dopant density than the intrinsic base, wherein a higher dopant density provides the band barrier at lateral surfaces of the intrinsic base. A gate may be disposed on a gate dielectric layer over a top surface boundary of the intrinsic base adjacent to the emitter. The gate is configured to accumulate the intrinsic base immediately under the gate dielectric layer, providing the band barrier at the top surface boundary of the intrinsic base.Type: ApplicationFiled: December 5, 2016Publication date: May 18, 2017Inventors: Weidong Tian, YuGuo Wang, Tathagata Chatterjee, Rajni J. Aggarwal
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Patent number: 9548298Abstract: An integrated circuit includes an NMOS transistor, a PMOS transistor and a vertical bipolar transistor. The vertical bipolar transistor has an intrinsic base with a band barrier at least 25 meV high at a surface boundary of the intrinsic base, except at an emitter-base junction with an emitter, and except at a base-collector junction with a collector. The intrinsic base may be laterally surrounded by an extrinsic base with a higher dopant density than the intrinsic base, wherein a higher dopant density provides the band barrier at lateral surfaces of the intrinsic base. A gate may be disposed on a gate dielectric layer over a top surface boundary of the intrinsic base adjacent to the emitter. The gate is configured to accumulate the intrinsic base immediately under the gate dielectric layer, providing the band barrier at the top surface boundary of the intrinsic base.Type: GrantFiled: November 16, 2015Date of Patent: January 17, 2017Assignee: TEXAS INSTUMENTS INCORPORATEDInventors: Weidong Tian, YuGuo Wang, Tathagata Chatterjee, Rajni J. Aggarwal
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Patent number: 9484435Abstract: One embodiment of the invention relates to a semiconductor device formed over a semiconductor body. In this device, source and drain regions are formed in the body about lateral edges of a gate electrode and are separated from one another by a gate length. A channel region, which is configured to allow charged carriers to selectively flow between the source and drain regions during operation of the device, has differing widths under the gate electrode. These widths are generally perpendicular to the gate length. Other devices, methods, and systems are also disclosed.Type: GrantFiled: December 19, 2007Date of Patent: November 1, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Henry Litzmann Edwards, Tathagata Chatterjee, Mohamed Kamel Mahmoud, Gabriel J. Gomez