Patents by Inventor Tatsuhiko Hirano

Tatsuhiko Hirano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090173910
    Abstract: To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprising abrasive grains, a processing accelerator, a nonionic surfactant represented by R-POE (I) (wherein R is a C10-16 alkyl group having a branched structure, and POE is a polyoxyethylene chain) and having an HLB of from 7 to 12, an anionic surfactant, a protective film-forming agent, an oxidizing agent, and water.
    Type: Application
    Filed: December 22, 2008
    Publication date: July 9, 2009
    Applicant: FUJIMI INCORPORATED
    Inventors: Tatsuhiko HIRANO, Hiroshi Mizuno, Yasuyuki Yamato, Akihito Yasui
  • Patent number: 7550388
    Abstract: A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.
    Type: Grant
    Filed: March 21, 2005
    Date of Patent: June 23, 2009
    Assignee: Fujima Incorporated
    Inventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Kenji Sakai, Katsunobu Hori
  • Publication number: 20090127500
    Abstract: A polishing composition contains a triazole having a 6-membered ring skeleton, a water soluble polymer, an oxidant, and abrasive grains. The triazole has a hydrophobic functional group in the 6-membered ring skeleton. The content of the triazole in the polishing composition is 3 g/L or less. The pH of the polishing composition is 7 or more. The polishing composition is suitably used in polishing for forming wiring of a semiconductor device.
    Type: Application
    Filed: September 1, 2006
    Publication date: May 21, 2009
    Applicant: FUJIMI INCORPORATED
    Inventors: Tatsuhiko Hirano, Hiroshi Asano, Katsunobu Hori
  • Patent number: 7485162
    Abstract: A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: February 3, 2009
    Assignee: Fujimi Incorporated
    Inventors: Tsuyoshi Matsuda, Tatsuhiko Hirano, Junhui Oh, Atsunori Kawamura, Kenji Sakai
  • Publication number: 20070176140
    Abstract: A first polishing composition is used in chemical mechanical polishing for removing one part of the portion of a conductive layer positioned outside a trench. A second polishing composition is used in chemical mechanical polishing for removing the remaining part of the portion of a conductive layer positioned outside the trench and the portion of a barrier layer positioned outside the trench. The first polishing composition contains a specific surfactant, a silicon oxide, a carboxylic acid, an anticorrosive, an oxidizing agent, and water. The second polishing composition contains colloidal silica, an acid, an anticorrosive, and a completely saponified polyvinyl alcohol.
    Type: Application
    Filed: September 30, 2004
    Publication date: August 2, 2007
    Inventors: Tsuyoshi Matsuda, Tatsuhiko Hirano, Junhui Oh, Atsunori Kawamura, Kenji Sakai
  • Publication number: 20060134908
    Abstract: A method for polishing an object to form wiring for a semiconductor device includes: removing part of an outside portion of a conductor layer through chemical and mechanical polishing to expose an upper surface of a barrier layer; and removing a remaining part of the outside portion of the conductor layer and an outside portion of the barrier layer through chemical and mechanical polishing to expose an upper surface of an insulator layer. When removing part of the outside portion of the conductor layer, the upper surface of the object is chemically and mechanically polished using a first polishing composition containing a film forming agent. Subsequently, the upper surface of the object is washed to remove a protective film formed on an upper surface of the conductor layer by the film forming agent in the first polishing composition. Thereafter, the upper surface of the object is chemically and mechanically polished again using a second polishing composition containing the film forming agent.
    Type: Application
    Filed: November 4, 2005
    Publication date: June 22, 2006
    Inventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Katsunobu Hori, Kenji Sakai
  • Publication number: 20060060974
    Abstract: A polishing composition comprising the following components (a) to (e): (a) silicon dioxide, (b) an alkaline compound, (c) an anticorrosive, (d) a water soluble polymer compound, and (e) water.
    Type: Application
    Filed: August 30, 2005
    Publication date: March 23, 2006
    Applicant: FUJIMI INCORPORATED
    Inventors: Tatsuhiko Hirano, Junhui Oh, Akifumi Sakao, Atsunori Kawamura, Katsunobu Hori
  • Publication number: 20050215060
    Abstract: A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.
    Type: Application
    Filed: March 21, 2005
    Publication date: September 29, 2005
    Applicant: Fujimi Incorporated
    Inventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Kenji Sakai, Katsunobu Hori
  • Publication number: 20050208761
    Abstract: A polishing composition contains a surface irregularity-inhibitor, silicon dioxide, an acid, an oxidant, and water. The surface irregularity-inhibitor is at least one selected from, for example, stored polysaccharides and extracellular polysaccharides. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is at least one selected from, for example, nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid, and malonic acid. The oxidant is, for example, hydrogen peroxide, persulfate, periodate, perchlorate, nitrate salt, or an oxidative metallic salt. The polishing composition can be suitably used in polishing for forming wiring in a semiconductor device.
    Type: Application
    Filed: March 21, 2005
    Publication date: September 22, 2005
    Applicant: Fujimi Incorporated
    Inventors: Junhui Oh, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Kenji Sakai, Katsunobu Hori
  • Publication number: 20050108949
    Abstract: A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water This polishing composition is capable of suppressing the occurrence of the dishing.
    Type: Application
    Filed: September 29, 2004
    Publication date: May 26, 2005
    Inventors: Tsuyoshi Matsuda, Tatsuhiko Hirano, Junhui Oh, Atsunori Kawamura, Kenji Sakai
  • Patent number: 6814767
    Abstract: The present invention provides a polishing composition that inhibits the occurrence of erosion. The polishing composition contains silicon oxide, a polyoxyethylene alkyl ether sulfate, a benzotriazole corrosion inhibitor, an acid, and water. The silicon oxide is preferably colloidal silica, the acid is preferably lactic acid, and the pH of the polishing composition is preferably 1.5 to 4.0.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: November 9, 2004
    Assignee: Fujimi Incorporated
    Inventor: Tatsuhiko Hirano
  • Publication number: 20040134376
    Abstract: The present invention provides a polishing composition that inhibits the occurrence of erosion. The polishing composition contains silicon oxide, a polyoxyethylene alkyl ether sulfate, a benzotriazole corrosion inhibitor, an acid, and water. The silicon oxide is preferably colloidal silica, the acid is preferably lactic acid, and the pH of the polishing composition is preferably 1.5 to 4.0.
    Type: Application
    Filed: September 30, 2003
    Publication date: July 15, 2004
    Inventor: Tatsuhiko Hirano
  • Publication number: 20040084414
    Abstract: A polishing method for reliably polishing a polishing target and a polishing composition used for polishing are provided. The polishing method of the present invention includes a first step in which the polishing target is polished with a first polishing composition, a second step in which the polishing target is polished with a second polishing composition, and a third step in which polishing target is polished with a third polishing composition. The polishing target is a multilayer, which includes an insulation layer, which has trenches on its surface, a barrier layer located on the insulation layer, and a conductor layer located on the barrier layer. In the first step, part of a portion of the conductor layer located outside the trenches is removed. In the second step, a remaining part of the portion of the conductor layer located outside the trenches is removed. In the third step, a portion of the barrier layer located outside the trenches is removed.
    Type: Application
    Filed: August 18, 2003
    Publication date: May 6, 2004
    Inventors: Kenji Sakai, Kazusei Tamai, Atsunori Kawamura, Tsuyoshi Matsuda, Tatsuhiko Hirano, Katsuyoshi Ina