Patents by Inventor Tatsuya Honda
Tatsuya Honda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240118126Abstract: An object of the present disclosure is to provide a method for remotely identifying a utility pole position and estimating a state of an overhead optical fiber cable. The present disclosure is a method for identifying a utility pole position including identifying a boundary region of a vibration distribution as a utility pole position, from a vibration distribution pattern obtained by measuring strain amounts with respect to distances of an optical fiber by an optical fiber vibration distribution measuring method at each time and sequentially stacking the strain amounts.Type: ApplicationFiled: February 17, 2021Publication date: April 11, 2024Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATIONInventors: Tatsuya OKAMOTO, Daisuke IIDA, Yusuke KOSHIKIYA, Nazuki HONDA
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Publication number: 20240118127Abstract: The present disclosure is an optical line test system that detects a distribution of loss points of an optical line in a longitudinal direction, using a coherent light measurement device, applies vibration to facility disposed on a path of the optical line, detects a vibration point of the optical line in a longitudinal direction upon applying the vibration, using the coherent light measurement device, and identifies the loss point based on correspondence between the detected loss point and vibration point.Type: ApplicationFiled: February 26, 2021Publication date: April 11, 2024Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATIONInventors: Daisuke IIDA, Yoshitaka ENOMOTO, Chihiro KITO, Tatsuya OKAMOTO, Yusuke KOSHIKIYA, Yoshifumi WAKISAKA, Nazuki HONDA
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Publication number: 20240085837Abstract: In an image forming apparatus, in a case of duplex printing, a sheet is transported toward an image forming device along a sheet transport route, the image forming device forms an image on a first face, which is one of faces of the sheet, a reverse transport device reverses the front and back faces of the sheet and transports the sheet to a position upstream of a show-through reading device in a sheet transport direction, and the show-through reading device reads a second face, which is another face of the sheet. Then the show-through detector decides whether a show-through has occurred, on a basis of the image that has been read.Type: ApplicationFiled: September 8, 2023Publication date: March 14, 2024Applicant: KYOCERA Document Solutions Inc.Inventors: Tatsuya MAJIMA, Kenji MIYAMOTO, Takahiro HONDA, Hiroyuki YAMAGUCHI, Hideo TAKETANI
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Publication number: 20240072172Abstract: When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×1013 atoms/cm2 or lower.Type: ApplicationFiled: November 2, 2023Publication date: February 29, 2024Inventors: Shunpei YAMAZAKI, Masahiko HAYAKAWA, Tatsuya HONDA
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Publication number: 20230420570Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.Type: ApplicationFiled: September 11, 2023Publication date: December 28, 2023Inventors: Tatsuya HONDA, Masashi TSUBUKU, Yusuke NONAKA, Takashi SHIMAZU, Shunpei YAMAZAKI
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Patent number: 11837898Abstract: An electronic device-charger set is provided including an electronic device, and a charger with which the electronic device is configured to interlock. The electronic device includes a body including a batter and a connector electrically connected to the battery, a clip extending along the body, and a magnet provided at the clip. The charger includes a charging connector disposed at a position connecting with the connector in state in which the electronic device is interlocked with the charger, a recess formed at a position to house the clip in state in which the electronic device is interlocked with the charger, and an attracting magnet provided at an opposing portion of the recess opposing the magnet and configured to generate an attraction force between the attracting magnet and the magnet.Type: GrantFiled: August 5, 2021Date of Patent: December 5, 2023Assignee: FUJITSU LIMITEDInventors: Ippei Takami, Yudai Senzaki, Tatsuya Honda, Tomohiro Suzuki, Yutaro Emoto
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Patent number: 11817505Abstract: When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×1013 atoms/cm2 or lower.Type: GrantFiled: March 4, 2022Date of Patent: November 14, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masahiko Hayakawa, Tatsuya Honda
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Publication number: 20230335647Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.Type: ApplicationFiled: June 22, 2023Publication date: October 19, 2023Inventors: Shunpei YAMAZAKI, Motoki NAKASHIMA, Tatsuya HONDA
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Patent number: 11791415Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.Type: GrantFiled: April 13, 2021Date of Patent: October 17, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu, Shunpei Yamazaki
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Patent number: 11688810Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.Type: GrantFiled: December 29, 2021Date of Patent: June 27, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Motoki Nakashima, Tatsuya Honda
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Publication number: 20220293794Abstract: When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×1013 atoms/cm2 or lower.Type: ApplicationFiled: March 4, 2022Publication date: September 15, 2022Inventors: Shunpei YAMAZAKI, Masahiko HAYAKAWA, Tatsuya HONDA
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Publication number: 20220165883Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.Type: ApplicationFiled: December 29, 2021Publication date: May 26, 2022Inventors: Shunpei YAMAZAKI, Motoki NAKASHIMA, Tatsuya HONDA
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Patent number: 11271115Abstract: When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×1013 atoms/cm2 or lower.Type: GrantFiled: December 31, 2019Date of Patent: March 8, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masahiko Hayakawa, Tatsuya Honda
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Publication number: 20220069137Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.Type: ApplicationFiled: November 8, 2021Publication date: March 3, 2022Inventors: Kengo AKIMOTO, Tatsuya HONDA, Norihito SONE
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Patent number: 11217701Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.Type: GrantFiled: March 9, 2020Date of Patent: January 4, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu, Shunpei Yamazaki
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Patent number: 11217702Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.Type: GrantFiled: April 15, 2020Date of Patent: January 4, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Motoki Nakashima, Tatsuya Honda
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Publication number: 20210376636Abstract: An electronic device-charger set is provided including an electronic device, and a charger with Which the electronic device is configured to interlock. The electronic device includes a body including a batter and a connector electrically connected to the battery, a clip extending along the body, and a magnet provided at the dip. The charger includes a charging connector disposed at a position connecting with the connector in state in which the electronic device is interlocked with the charger, a recess formed at a position to house the clip in state in which the electronic device is interlocked with the charger, and an attracting magnet provided at an opposing portion of the recess opposing the magnet and configured to generate an attraction force between the attracting magnet and the magnet.Type: ApplicationFiled: August 5, 2021Publication date: December 2, 2021Applicant: FUJITSU LIMITEDInventors: Ippei Takami, Yudai Senzaki, Tatsuya Honda, Tomohiro Suzuki, Yutaro Emoto
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Publication number: 20210257498Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.Type: ApplicationFiled: April 13, 2021Publication date: August 19, 2021Inventors: Tatsuya HONDA, Masashi TSUBUKU, Yusuke NONAKA, Takashi SHIMAZU, Shunpei YAMAZAKI
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Patent number: 11049977Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.Type: GrantFiled: September 13, 2018Date of Patent: June 29, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Motoki Nakashima, Tatsuya Honda
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Patent number: D992598Type: GrantFiled: July 10, 2020Date of Patent: July 18, 2023Assignee: Kabushiki Kaisha ToshibaInventor: Tatsuya Honda