Patents by Inventor Tatsuya Honda

Tatsuya Honda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10442374
    Abstract: According to one embodiment, a vehicle-use storage battery system includes a storage battery, a main circuit, a circuit breaker, a storage battery management unit, a first determiner, and a second determiner. The main circuit is electrically connected to the storage battery. The circuit breaker is disposed between the storage battery and the main circuit to make or break the electrical connection therebetween. The storage battery management unit manages an operating state of the storage battery. The first determiner determines whether to break the electrical connection between the storage battery and the main circuit by means of the circuit breaker. The second determiner determines, on the basis of at least one of operating states of the storage battery management unit, the first determiner, and the circuit breaker, whether to break the electrical connection between the storage battery and the main circuit by means of the circuit breaker.
    Type: Grant
    Filed: December 9, 2014
    Date of Patent: October 15, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsumi Kondo, Kazuto Kuroda, Tatsuya Arai, Masaki Sato, Akinobu Nishikawa, Shinichiro Kosugi, Masahiro Sekino, Hideaki Yasui, Mai Honda, Masahiro Kurosu, Kotaro Ogawa, Tomonao Takamatsu, Mitsunobu Yoshida, Takafumi Nakahama, Akihiko Ujiie
  • Publication number: 20190256555
    Abstract: A carrier for ligand immobilization obtained by shrinking polysaccharide porous beads not less than 10% by a shrinkage rate defined by the following formula, and crosslinking the polysaccharide porous beads: Shrinkage rate (%)=(1?V2/V1)×100 (wherein, V1 indicates the gel volume of polysaccharide porous beads before shrinkage, and V2 indicates the gel volume of polysaccharide porous beads after shrinkage).
    Type: Application
    Filed: December 20, 2018
    Publication date: August 22, 2019
    Applicant: KANEKA CORPORATION
    Inventors: Takahiro OKUBO, Yoshikazu KAWAI, Masaru HIRANO, Fuminori KONOIKE, Keiichi KARASUGI, Tatsuya HONDA
  • Publication number: 20190237585
    Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.
    Type: Application
    Filed: April 11, 2019
    Publication date: August 1, 2019
    Inventors: Tatsuya HONDA, Masashi TSUBUKU, Yusuke NONAKA, Takashi SHIMAZU, Shunpei YAMAZAKI
  • Patent number: 10340564
    Abstract: According to one embodiment, a vehicular storage battery device includes a housing, battery boxes, and a common cooling passage. The battery boxes are disposed in the housing. Each of the battery boxes houses an electric cell as a vehicle power source and includes a heat transporting part transporting heat generated in the battery box to outside of the battery box. The common cooling passage is disposed in the housing. The common cooling passage is provided with an inlet for taking in a fluid and an outlet for discharging the fluid having passed through the passage. The inlet and the outlet are open in a direction different from a traveling direction of the vehicle. The heat transporting part of each of the battery boxes is exposed to inside of the passage.
    Type: Grant
    Filed: January 6, 2015
    Date of Patent: July 2, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Akinobu Nishikawa, Shigeki Kono, Masaki Sato, Tatsuya Arai, Kotaro Ogawa, Shinichiro Kosugi, Masahiro Sekino, Kazuto Kuroda, Hideaki Yasui, Mai Honda, Tomonao Takamatsu, Mitsunobu Yoshida, Takafumi Nakahama, Akihiko Ujiie, Atsumi Kondo, Masahiro Kurosu
  • Patent number: 10304962
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: May 28, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 10290744
    Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: May 14, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu, Shunpei Yamazaki
  • Patent number: 10221211
    Abstract: A process for producing porous cellulose beads of the present invention is characterized by comprising the steps of: a) mixing an alkali aqueous solution and cellulose to prepare cellulose micro dispersion at low temperature, b) adding water to the cellulose micro dispersion to prepare cellulose slurry, and d) bringing the cellulose slurry into contact with coagulation solvent. A carrier for ligand immobilization of the present invention is characterized by being by shrinking polysaccharide porous beads not less than 10% by a shrinkage rate defined by the following formula, and crosslinking the polysaccharide porous beads: Shrinkage rate (%)=(1?V2/V1)×100 (wherein, V1 indicates the gel volume of polysaccharide porous beads before shrinkage, and V2 indicates the gel volume of polysaccharide porous beads after shrinkage).
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: March 5, 2019
    Assignee: KANEKA CORPORATION
    Inventors: Takahiro Okubo, Yoshikazu Kawai, Masaru Hirano, Fuminori Konoike, Keiichi Karasugi, Tatsuya Honda
  • Publication number: 20190054179
    Abstract: This pharmaceutical composition contains a hvdroxamic acid derivative, or a salt thereof, and a solubilizer, said hydroxamic acid derivative being selected from among (2S)-2-((4-((4-((1S)-1,2-dihydroxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N-hydroxy-N?,2- dimethylmalonamide, (2S)-2-((4((4-((1R)-1,2-dihydroxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N-hydroxy-N?,2-dimethylmalonamide, and (2S)-N-hydroxy-2-((4-((4-((1S)-1-hydroxy-2-methoxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N?,2-dimethylmalonamide. The pharmaceutical composition demonstrates strong antibacterial activity, has excellent solubility in water, and is useful as a drug.
    Type: Application
    Filed: October 23, 2018
    Publication date: February 21, 2019
    Applicant: TOYAMA CHEMICAL CO., LTD.
    Inventors: Tatsuya HONDA, Yuko SUZUMURA, Tomoya KATO, Yu KOSEKI, Kohei ONO
  • Publication number: 20190051755
    Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.
    Type: Application
    Filed: October 18, 2018
    Publication date: February 14, 2019
    Inventors: Shunpei YAMAZAKI, Masahiro TAKAHASHI, Tatsuya HONDA, Takehisa HATANO
  • Publication number: 20190051759
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Application
    Filed: October 17, 2018
    Publication date: February 14, 2019
    Inventors: Kengo AKIMOTO, Tatsuya HONDA, Norihito SONE
  • Publication number: 20190013407
    Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.
    Type: Application
    Filed: September 13, 2018
    Publication date: January 10, 2019
    Inventors: Shunpei YAMAZAKI, Motoki NAKASHIMA, Tatsuya HONDA
  • Patent number: 10149911
    Abstract: This pharmaceutical composition contains a hydroxamic acid derivative, or a salt thereof, and a solubilizer, said hydroxamic acid derivative being selected from among (2S)-2-((4-((4-((1S)-1,2-dihydroxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N-hydroxy-N?,2-dimethylmalonamide, 2S)-2-((4-((4-((1R)-1,2-dihydroxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N-hydroxy-N?,2-dimethylmalonamide, and (2S)-N-hydroxy-2-((4-((4-((1S)-1-hydroxy-2-methoxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N?,2-dimethylmalonamide. The pharmaceutical composition demonstrates strong antibacterial activity, has excellent solubility in water, and is useful as a drug.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: December 11, 2018
    Assignee: TOYAMA CHEMICAL CO., LTD.
    Inventors: Tatsuya Honda, Yuko Suzumura, Tomoya Kato, Yu Koseki, Kohei Ono
  • Patent number: 10153378
    Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: December 11, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Takahashi, Tatsuya Honda, Takehisa Hatano
  • Publication number: 20180308989
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Application
    Filed: June 28, 2018
    Publication date: October 25, 2018
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
  • Patent number: 10103277
    Abstract: A method comprising a step of forming an oxide semiconductor film over a substrate by a sputtering method while heating the substrate at a temperature of higher than 200° C. and lower than or equal to 400° C. is provided. The oxide semiconductor film comprises a crystalline region and is in a non-single-crystal state. The step of forming the oxide semiconductor film is performed by using a sputtering target comprising indium, gallium, zinc and oxygen and a sputtering gas comprising at least one of a rare gas and oxygen.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: October 16, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
  • Patent number: 10079309
    Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: September 18, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Motoki Nakashima, Tatsuya Honda
  • Patent number: 10026847
    Abstract: In a semiconductor element including an oxide semiconductor film as an active layer, stable electrical characteristics are achieved. A semiconductor element includes a base film which is an oxide film at least a surface of which has crystallinity; an oxide semiconductor film having crystallinity over the base film; a gate insulating film over the oxide semiconductor film; a gate electrode overlapping with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. The base film is a film containing indium and zinc. With the structure, a state of crystals in the oxide semiconductor film reflects that in the base film; thus, the oxide semiconductor film can have crystallinity in a large region in the thickness direction. Accordingly, the electrical characteristics of the semiconductor element including the film can be made stable.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: July 17, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tatsuya Honda, Suzunosuke Hiraishi, Hiroshi Kanemura, Masashi Oota
  • Publication number: 20180179250
    Abstract: A method for immobilizing a ligand on a formyl group-containing insoluble base material includes producing an imine by mixing the ligand and the formyl group-containing insoluble base material, and reducing the imine by using a borane complex, wherein the ligand comprises an amino group and has a specific affinity for a target compound, and wherein the borane complex has a Lewis base ligand having pKa of 6.5 or less.
    Type: Application
    Filed: February 26, 2018
    Publication date: June 28, 2018
    Applicant: Kaneka Corporation
    Inventors: Fuminori Konoike, Tatsuya Honda, Keiichi Karasugi
  • Patent number: 9893195
    Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: February 13, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kosei Noda, Shunpei Yamazaki, Tatsuya Honda, Yusuke Sekine, Hiroyuki Tomatsu
  • Patent number: D813213
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: March 20, 2018
    Assignee: Toshiba Visual Solutions Corporation
    Inventor: Tatsuya Honda