Patents by Inventor Tatsuya Honda
Tatsuya Honda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190013407Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.Type: ApplicationFiled: September 13, 2018Publication date: January 10, 2019Inventors: Shunpei YAMAZAKI, Motoki NAKASHIMA, Tatsuya HONDA
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Patent number: 10149911Abstract: This pharmaceutical composition contains a hydroxamic acid derivative, or a salt thereof, and a solubilizer, said hydroxamic acid derivative being selected from among (2S)-2-((4-((4-((1S)-1,2-dihydroxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N-hydroxy-N?,2-dimethylmalonamide, 2S)-2-((4-((4-((1R)-1,2-dihydroxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N-hydroxy-N?,2-dimethylmalonamide, and (2S)-N-hydroxy-2-((4-((4-((1S)-1-hydroxy-2-methoxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N?,2-dimethylmalonamide. The pharmaceutical composition demonstrates strong antibacterial activity, has excellent solubility in water, and is useful as a drug.Type: GrantFiled: September 11, 2015Date of Patent: December 11, 2018Assignee: TOYAMA CHEMICAL CO., LTD.Inventors: Tatsuya Honda, Yuko Suzumura, Tomoya Kato, Yu Koseki, Kohei Ono
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Patent number: 10153378Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.Type: GrantFiled: September 11, 2015Date of Patent: December 11, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masahiro Takahashi, Tatsuya Honda, Takehisa Hatano
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Publication number: 20180308989Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.Type: ApplicationFiled: June 28, 2018Publication date: October 25, 2018Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
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Patent number: 10103277Abstract: A method comprising a step of forming an oxide semiconductor film over a substrate by a sputtering method while heating the substrate at a temperature of higher than 200° C. and lower than or equal to 400° C. is provided. The oxide semiconductor film comprises a crystalline region and is in a non-single-crystal state. The step of forming the oxide semiconductor film is performed by using a sputtering target comprising indium, gallium, zinc and oxygen and a sputtering gas comprising at least one of a rare gas and oxygen.Type: GrantFiled: July 13, 2017Date of Patent: October 16, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
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Patent number: 10079309Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.Type: GrantFiled: June 10, 2016Date of Patent: September 18, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Motoki Nakashima, Tatsuya Honda
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Patent number: 10026847Abstract: In a semiconductor element including an oxide semiconductor film as an active layer, stable electrical characteristics are achieved. A semiconductor element includes a base film which is an oxide film at least a surface of which has crystallinity; an oxide semiconductor film having crystallinity over the base film; a gate insulating film over the oxide semiconductor film; a gate electrode overlapping with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. The base film is a film containing indium and zinc. With the structure, a state of crystals in the oxide semiconductor film reflects that in the base film; thus, the oxide semiconductor film can have crystallinity in a large region in the thickness direction. Accordingly, the electrical characteristics of the semiconductor element including the film can be made stable.Type: GrantFiled: November 13, 2012Date of Patent: July 17, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tatsuya Honda, Suzunosuke Hiraishi, Hiroshi Kanemura, Masashi Oota
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Publication number: 20180179250Abstract: A method for immobilizing a ligand on a formyl group-containing insoluble base material includes producing an imine by mixing the ligand and the formyl group-containing insoluble base material, and reducing the imine by using a borane complex, wherein the ligand comprises an amino group and has a specific affinity for a target compound, and wherein the borane complex has a Lewis base ligand having pKa of 6.5 or less.Type: ApplicationFiled: February 26, 2018Publication date: June 28, 2018Applicant: Kaneka CorporationInventors: Fuminori Konoike, Tatsuya Honda, Keiichi Karasugi
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Patent number: 9893195Abstract: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.Type: GrantFiled: December 22, 2014Date of Patent: February 13, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kosei Noda, Shunpei Yamazaki, Tatsuya Honda, Yusuke Sekine, Hiroyuki Tomatsu
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Patent number: 9876119Abstract: An oxide semiconductor film is formed over a substrate, a film of a semiconductor other than an oxide semiconductor is formed over the oxide semiconductor film, and then an oxygen atom in the oxide semiconductor film and an atom in the film of a semiconductor are bonded to each other at an interface between the oxide semiconductor film and the film of a semiconductor. Accordingly, the interface can be made continuous. Further, oxygen released from the oxide semiconductor film is diffused into the film of a semiconductor, so that the film of a semiconductor can be oxidized to form an insulating film. The use of the gate insulating film thus formed leads to a reduction in interface scattering of electrons at the interface between the oxide semiconductor film and the gate insulating film; so that a transistor with excellent electric characteristics can be manufactured.Type: GrantFiled: March 10, 2016Date of Patent: January 23, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Tatsuya Honda
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Publication number: 20170309754Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.Type: ApplicationFiled: July 13, 2017Publication date: October 26, 2017Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
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Publication number: 20170290918Abstract: This pharmaceutical composition contains a hydroxamic acid derivative, or a salt thereof, and a solubilizer, said hydroxamic acid derivative being selected from among (2S)-2-((4-((4-((1S)-1,2-dihydroxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N-hydroxy-N?,2-dimethylmalonamide, (2S)-2-((4-((4-((1R)-1,2-dihydroxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N-hydroxy-N?,2-dimethylmalonamide, and (2S)—N-hydroxy-2-((4-((4-((1S)-1-hydroxy-2-methoxyethyl)phenyl)ethynyl)benzoyl)(methyl)amino)-N?,2-dimethylmalonamide. The pharmaceutical composition demonstrates strong antibacterial activity, has excellent solubility in water, and is useful as a drug.Type: ApplicationFiled: September 11, 2015Publication date: October 12, 2017Applicant: TOYAMA CHICAL CO., LTD.Inventors: Tatsuya HONDA, Yuko SUZUMURA, Tomoya KATO, Yu KOSEKI, Kohie ONO
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Patent number: 9768307Abstract: An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.Type: GrantFiled: December 27, 2016Date of Patent: September 19, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tatsuya Honda
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Patent number: 9741860Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.Type: GrantFiled: April 9, 2015Date of Patent: August 22, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu, Shunpei Yamazaki
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Publication number: 20170213914Abstract: When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×1013 atoms/cm2 or lower.Type: ApplicationFiled: April 6, 2017Publication date: July 27, 2017Inventors: Shunpei YAMAZAKI, Masahiko HAYAKAWA, Tatsuya HONDA
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Patent number: 9711655Abstract: A semiconductor device comprising a first metal oxide film, an oxide semiconductor film, a second metal oxide film, a gate insulating film, and a gate electrode is provided. The oxide semiconductor film comprises an In—Ga—Zn—O-based metal oxide. The second metal oxide film comprises a Ga—Zn—O-based metal oxide. An amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—Zn—O-based metal oxide.Type: GrantFiled: April 25, 2016Date of Patent: July 18, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kengo Akimoto, Hiroki Ohara, Tatsuya Honda, Takatsugu Omata, Yusuke Nonaka, Masahiro Takahashi, Akiharu Miyanaga
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Patent number: 9680028Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.Type: GrantFiled: July 9, 2015Date of Patent: June 13, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu, Shunpei Yamazaki
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Publication number: 20170148925Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.Type: ApplicationFiled: February 2, 2017Publication date: May 25, 2017Inventors: Tatsuya HONDA, Masashi TSUBUKU, Yusuke NONAKA, Takashi SHIMAZU, Shunpei YAMAZAKI
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Patent number: D807862Type: GrantFiled: November 11, 2016Date of Patent: January 16, 2018Assignee: FUJITSU LIMITEDInventors: Ippei Takami, Tatsuya Honda
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Patent number: D813213Type: GrantFiled: December 29, 2016Date of Patent: March 20, 2018Assignee: Toshiba Visual Solutions CorporationInventor: Tatsuya Honda