Abstract: In an ultrasonic transducer including a gap between an upper electrode and a lower electrode on a silicon substrate, it is made possible to reduce or adjust warpage of an above-gap membrane vibrated by electrostatic actuation due to internal stress. A fourth insulating film and a fifth insulating film of films positioned above the gap which is a cavity required for transmitting and receiving ultrasonic are respectively a silicon oxide film for compression stress and a silicon nitride film for tensile stress. Therefore, compression stress and tensile stress cancel each other, so that warpage of the above-gap membrane is reduced. An amount of warpage can be adjusted by adjusting a film thickness of the fourth insulating film and a film thickness of the fifth insulating film.

Abstract: An inkjet head is provided and includes: a chamber substrate for forming an ink flow passage; a diaphragm substrate including a diaphragm for pressurizing a pressure chamber disposed in the chamber substrate; and a nozzle substrate for jetting ink pressurized by the diaphragm, wherein the diaphragm substrate is made of silicon, the diaphragm is made of a material selected from the group of silicon oxide film and metal film, and the diaphragm is formed in the diaphragm substrate. A method of manufacturing the inkjet head is also provided.

Abstract: In a semiconductor diaphragm type electro-acoustic transducer device having no necessity for a DC bias voltage applied as a result of a charge-stored layer being provide between electrodes, electro-mechanical conversion efficiency undergoes a change owing to time-dependent change in a quantity of stored electricity due to leakage of charge, and so forth. As for sensitivity of signal reception, provided by an ultrasonic array-transducer made up of the electro-acoustic transducer devices each as a basic unit, not only a main beam sensitivity undergoes drift as a result of drift in the electromechanical conversion efficiency, but also there result deterioration in an acoustic S/N ratio, and deterioration in directionality of an ultrasonic beam.

Abstract: Disclosed is an improved construction of an ultrasonic transducer, wherein a charge is not easily injected into an insulating film even when the bottom of a membrane comes in contact with a lower electrode, and a manufacturing method thereof without using the wafer laminating technique. The ultrasonic transducer includes a lower electrode; a cavity layer formed on the first electrode; an insulating film covering the cavity layer; and an upper electrode formed on the insulating film, wherein, the cavity layer includes projections formed into an insulating film protruded from the cavity layer. In addition, an opening is formed into the upper electrode, and this upper electrode having the opening formed therein is deposited at a position not being superposed with the projections of the insulating film when seen from the top.

Abstract: A display panel excellent in reduction in weight and excellent in reliability is provided. The display panel of the invention includes a cover member having a peripheral part bonded and secured to a back surface of a cathode panel, and a central part enclosed by the peripheral part which central part is joined to a reinforcing panel. The reinforcing panel is pressed against a peripheral part of the cathode panel via a support frame by atmospheric pressure exerted on the cover member.

Abstract: There is provided a method of manufacturing a display panel and an anode panel for improving reliability of a sealing portion of the display panel. Vacuuming (evacuation of air) is performed to inside of a cavity formed by a cathode panel and an anode panel in a state of viscosity in which a sealant melts and deforms in manufacturing of a display.

Abstract: The present invention aims to stabilize sound-electricity conversion characteristics of a diaphragm-type sound-electricity conversion device as well as to decrease the noise level of an ultrasonic diagnostic apparatus using the sound-electricity conversion device. The sound-electricity conversion device is configured by a capacitor cell including a lower electrode formed on a silicon substrate and an upper electrode over the lower electrode, the lower and upper electrodes sandwiching a cavity. An electrode short-circuit prevention film is formed on the upper electrode on the cavity side. The electrode short-circuit prevention film is formed of a material with an electrical time constant shorter than 1 second and longer than 10 microseconds, such as silicon nitride containing a stoichiometrically excessive amount of silicon.

Abstract: A BGA semiconductor device for high-speed operation and high pin counts has a base which is constituted by a core layer formed of wiring boards and surface layers provided on both sides of the core layer, and a semiconductor element mounted on the base. Through holes in a signal region of the core layer are disposed in an optimum through hole pattern in which power through holes and ground through holes are disposed adjacent to signal through holes.

Abstract: The present invention has an object to provide a flat panel display which employs a high-strength glass material to realize a reduction in thickness and weight. The flat panel display includes two substrates SUB1 and SUB2 and a light emitter PMG provided between the two substrates. At least one of the two substrates is made of glass material containing SiO2 as its main component and 1 to 20 wt % of at least one selected from La, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: The invention eliminates a need to increase a size of a semiconductor device and reduces occurrence of noise.

Abstract: A manufacturing method for improving the yield in a semiconductor manufacturing process and reducing the manufacturing cost produces a semiconductor device that is inexpensively manufactured and has a high reliability by reliably making contact during inspection with a suitable pressing force, while limiting damage to an electrode pad even when many inspected electrodes are inspected. A substrate used for inspection of the semiconductor device has a beam, a probe on the beam having a projecting shape for coming in contact with an electrode (electrode pad) of the semiconductor device, and a secondary electrode electrically connected to the probe through an electrically conductive member disposed on the side of the beam opposed to the side where the probe is provided. In an inspecting process, an inspecting device having a layer having many projections formed in the probe come in contact with the electrode pad of the semiconductor device.

Abstract: According to the present invention, there is provided a membrane electrode composite module including a membrane electrode composite formed by sandwiching both surfaces of an electrolyte membrane between gas diffusion electrodes, an anode current collecting plate having fuel flow holes through which fuel flows, and a cathode current collecting plate having oxygen flow holes through which oxygen flows, wherein both surfaces of the membrane electrode composite are sandwiched between the anode current collecting plate and the cathode current collecting plate, the membrane electrode composite module further including films made of a synthetic resin (a first film and a second film) which are a base of the anode current collecting plate and a base of the cathode current collecting plate.

Abstract: It is an object of the present invention to provide a fuel cell having a pressurizing mechanism which can optimize pressure applied to a membrane electrode assembly (MEA) working as a power-generating element to realize high-efficiency power generation and an electronic device equipped with the same. The fuel cell 10A comprises the membrane electrode assembly module 20 which consumes the liquid fuel 40 to generate power, and the fuel chamber 30 for supplying the liquid fuel 40 which it holds inside to the membrane electrode assembly module 20 from the aperture 31, wherein it is provided with the pressurizing member 60 on the membrane electrode assembly module 20, clamping member 53 for fixing the pressurizing member 60 and fuel chamber 30, and elastic member for applying a pressure on the membrane electrode assembly module 20 in its thickness direction, to solve the problems.

Abstract: It is an object of the present invention to provide a fuel cell which can supply a liquid fuel, without changing its composition, to every corner of the membrane electrode assemblies arranged two- dimensionally over a wide area, to generate power at a high efficiency. The fuel cell 10A comprises the membrane electrode assembly modules 20 which consume the liquid fuel 40 to generate power, and the fuel chamber 30 which holds the liquid fuel 40 inside and has the principal plane on which the membrane electrode assembly modules 20 are arranged, wherein the fuel chamber 30 is provided with the fuel injection hole 33 inside, through which the liquid fuel 40 is supplied under pressure from the outside, and the fuel supply gear 42 inside, which is located to come close to the membrane electrode assembly modules 20, the fuel supply gear 42 being provided, on the surface, with the fine pores 43 through which the liquid fuel 40 can pass.

Abstract: A probe structure is provided in which secondary electrodes of a main base material and probes are formed can be electrically connected to electrodes in a substrate side even when a lot of probes are formed in a large area, so that a lot of LSIs within a wafer can be tested in one lot in a wafer test process, and an efficiency of the test process can be improved. In the probe structure, an interposer constituted by a high rigid material is arranged between the main base material having the probes formed therein and the substrate side, and the secondary electrodes of the main base material having the probes formed therein are electrically connected to the electrodes in the substrate side via the interposer.

Abstract: In a memory module, reference potential connecting patterns are disposed on high frequency signal lines and/or on the extension lines extending from the terminal ends of the signal lines as well as a shield cover for covering semiconductor memory chips is disposed on the substrate, and the reference potential connecting patterns are connected to the shield cover through metal cover contact parts.

Abstract: An object of the present invention is to achieve high resolution, lightening, and thinning of a display apparatus. The display apparatus includes an anode substrate, a planar cathode substrate forming an electron emitting chamber vacuously sealed between the cathode substrate and the anode substrate, electron sources formed on the cathode substrate, phosphors formed on the anode substrate, and a vacuum seal member forming a pressure balancing chamber on the back of the electron emitting chamber side of the cathode substrate. The vacuum seal member is placed covering the back of the electron emitting chamber side, and has a shell structure for receiving the atmospheric pressure.

Abstract: To achieve high resolution, lightening, and thinning in a display apparatus, the display apparatus includes a thin display panel and a control unit. The display panel includes an anode substrate, a cathode substrate forming an electron emitting chamber vacuously sealed between itself and the anode substrate, phosphors formed on the anode substrate, and a pressure support formed on the back of the electron emitting chamber side of the cathode substrate. The pressure support includes a vacuum seal member forming a pressure supporting chamber vacuously sealed between itself and the cathode substrate independently of the electron emitting chamber, and a reinforcement member which is formed of a member having a gap, which is sandwiched between the vacuum seal member and cathode substrate in the pressure supporting member, and at least both end portions of which span a bonding area of the cathode substrate for the anode substrate.

Abstract: A semiconductor device includes a quadrangular semiconductor substrate and a self test circuit formed on the semiconductor substrate. A plurality of pads are formed on the semiconductor substrate, which pads are coupled at least to the self test circuit. The semiconductor substrate includes four rectangular or square regions which each include a respective corner of the quadrangle, and at least two of the pads are respectively located on diagonally opposite ones of the regions from one another.

Abstract: A manufacturing method for improving the yield in a semiconductor manufacturing process and reducing the manufacturing cost produces a semiconductor device that is inexpensively manufactured and has a high reliability by reliably making contact during inspection with a suitable pressing force, while limiting damage to an electrode pad even when many inspected electrodes are inspected. A substrate used for inspection of the semiconductor device has a beam, a probe on the beam having a projecting shape for coming in contact with an electrode (electrode pad) of the semiconductor device, and a secondary electrode electrically connected to the probe through an electrically conductive member disposed on the side of the beam opposed to the side where the probe is provided. In an inspecting process, an inspecting device having a layer having many projections formed in the probe come in contact with the electrode pad of the semiconductor device.