Patents by Inventor Tatsuyuki Saito

Tatsuyuki Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200039999
    Abstract: An object of the present invention is to provide a method for producing 1,2,4,5-cyclohexanetetracarboxylic dianhydride, which is capable of stably achieving a high dehydration rate. The method for producing 1,2,4,5-cyclohexanetetracarboxylic dianhydride of the present invention is a method for producing 1,2,4,5-cyclohexanetetracarboxylic dianhydride by subjecting 1,2,4,5-cyclohexanetetracarboxylic acid to a dehydration reaction in a slurry state in the presence of a dehydrating agent, wherein the 1,2,4,5-cyclohexanetetracarboxylic acid is fed in a divided or continuous manner to the dehydrating agent.
    Type: Application
    Filed: March 22, 2018
    Publication date: February 6, 2020
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Shinyo SHIRAI, Tatsuyuki KUMANO, Shinya SAITO
  • Publication number: 20200031841
    Abstract: An object of the present invention is to provide a method for producing 1,2,4,5-cyclohexanetetracarboxylic dianhydride, which is capable of stably achieving a high dehydration rate. The method for producing 1,2,4,5-cyclohexanetetracarboxylic dianhydride of the present invention is a method for producing 1,2,4,5-cyclohexanetetracarboxylic dianhydride by subjecting 1,2,4,5-cyclohexanetetracarboxylic acid to a dehydration reaction in a slurry state in the presence of a dehydrating agent, wherein an average particle size of the 1,2,4,5-cyclohexanetetracarboxylic acid is 20 ?m or more.
    Type: Application
    Filed: March 22, 2018
    Publication date: January 30, 2020
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Shinyo SHIRAI, Tatsuyuki KUMANO, Shinya SAITO
  • Patent number: 10502758
    Abstract: Airtightness in a cavity of an inertial sensor (acceleration sensor) is increased to achieve high sensitivity. In the acceleration sensor having movable electrodes VE1, VE2 and fixed electrodes FE1, FE2, the fixed electrodes are formed by portions surrounded by a through hole TH1 provided in a cap layer CL, and the through hole is filled with an insulating film IF1 and polysilicon P and has a wide portion (WP). The wide portion has a gap SP that is not filled with the insulating film IF1 and the polysilicon P, and the gap SP is filled with the interlayer insulating film ID. With such a configuration, degassing can be exhausted through the gap (airway) SP in a pressure reducing step.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: December 10, 2019
    Assignee: Hitachi, Ltd.
    Inventors: Takashi Shiota, Tatsuyuki Saito, Tatemi Ido, Noriyuki Sakuma, Yuudai Kamada, Atsushi Isobe, Chisaki Takubo
  • Publication number: 20190244855
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: April 16, 2019
    Publication date: August 8, 2019
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 10304726
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: May 28, 2019
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Publication number: 20190035678
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: September 21, 2018
    Publication date: January 31, 2019
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 10121693
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: October 9, 2017
    Date of Patent: November 6, 2018
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Publication number: 20180238926
    Abstract: Airtightness in a cavity of an inertial sensor (acceleration sensor) is increased to achieve high sensitivity. In the acceleration sensor having movable electrodes VE1, VE2 and fixed electrodes FE1, FE2, the fixed electrodes are formed by portions surrounded by a through hole TH1 provided in a cap layer CL, and the through hole is filled with an insulating film IF1 and polysilicon P and has a wide portion (WP). The wide portion has a gap SP that is not filled with the insulating film IF1 and the polysilicon P, and the gap SP is filled with the interlayer insulating film ID. With such a configuration, degassing can be exhausted through the gap (airway) SP in a pressure reducing step.
    Type: Application
    Filed: November 9, 2016
    Publication date: August 23, 2018
    Inventors: Takashi SHIOTA, Tatsuyuki SAITO, Tatemi IDO, Noriyuki SAKUMA, Yuudai KAMADA, Atsushi ISOBE, Chisaki TAKUBO
  • Publication number: 20180047620
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: October 9, 2017
    Publication date: February 15, 2018
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 9856943
    Abstract: A speed reducer (20) of a reduction motor (1) includes a first internal gear (22) attached to the housing, an input shaft (21) having an eccentric shaft portion (21d), a first external gear (24) having a pitch circle diameter smaller than a pitch circle diameter of the first internal gear (22), and an output member (27) connected to the first external gear (24). The input shaft (21) is configured to be rotated by a rotation input from the electric motor (10). The first external gear (24) is configured to be placed inside of the first internal gear (22) under a state that a part of an external teeth (24a) of the first external gear (24) engages with an internal teeth (22d) of the first internal gear (24a). A holding member (28) fixes the first internal gear (22) in the axial direction of the input shaft (21).
    Type: Grant
    Filed: September 20, 2013
    Date of Patent: January 2, 2018
    Assignee: Mitsuba Corporation
    Inventors: Tatsuyuki Saito, Tetsuya Watanabe, Naofumi Matoba, Hitoshi Tsukamoto
  • Patent number: 9818639
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: November 14, 2017
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Publication number: 20170200637
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: March 27, 2017
    Publication date: July 13, 2017
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 9659867
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: May 23, 2017
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Patent number: 9650715
    Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: May 16, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yukinao Kaga, Tatsuyuki Saito, Masanori Sakai, Takashi Yokogawa
  • Publication number: 20170011994
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 12, 2017
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 9490213
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: May 1, 2015
    Date of Patent: November 8, 2016
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Patent number: 9472398
    Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: October 18, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
  • Patent number: 9466477
    Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: October 11, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
  • Patent number: 9416446
    Abstract: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.
    Type: Grant
    Filed: October 5, 2015
    Date of Patent: August 16, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
  • Patent number: 9340873
    Abstract: Provided is a semiconductor device manufacturing method including: (a) supplying a source gas containing a first element and chlorine to a substrate accommodated in a processing chamber to form an adsorption layer of the source gas on the substrate; (b) supplying a chlorine-containing gas having a composition different from that of the source gas to the substrate while supplying the sources gas before an adsorption of the source gas to the substrate is saturated to suppress the adsorption of the source gas to the substrate; (c) removing the source gas and the chlorine-containing gas remaining on the substrate; (d) supplying a modifying gas including a second element to the substrate to form a layer including the first element and the second element on the substrate by modifying the adsorption layer of the source gas; and (e) removing the modifying gas remaining on the substrate.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: May 17, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa