Abstract: A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film at a higher film-forming rate. The method includes loading a substrate into a processing chamber; simultaneously starting a supply of a first processing gas and a second processing gas to form a film on the substrate, simultaneously stopping the supply of the first and second processing gas; removing the remaining first and second processing gas from the processing chamber; supplying the second processing gas into the processing chamber without supplying the first processing gas; removing the second processing gas starting and then stopping a supply of the first processing gas into the processing chamber without supplying the second processing gas; removing the first processing gas; and unloading the substrate from the processing chamber.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: Disclosed is an electric motor including a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled on the yoke, an armature core formed with a plurality of teeth and fixed onto the rotary shaft, an armature coil wound around the teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a connecting wire connecting two segments arranged to face each other back to back around the rotary shaft, the armature being surrounded by the permanent magnets and accommodated within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: Disclosed is a windshield wiper motor having a reduction mechanism unit and an electric motor. The electric motor of the windshield wiper motor includes a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled to the yoke, an armature core where a plurality of teeth are formed and fixed onto the rotary shaft, an armature coil wound around teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a plurality of connecting wires connecting two segments arranged to face each other back to back around the rotary shaft, being surrounded by the permanent magnets and arranged within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.

Abstract: A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.

Abstract: Disclosed is an electric motor including a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled on the yoke, an armature core formed with a plurality of teeth and fixed onto the rotary shaft, an armature coil wound around the teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a connecting wire connecting two segments arranged to face each other back to back around the rotary shaft, the armature being surrounded by the permanent magnets and accommodated within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.

Abstract: Disclosed is a windshield wiper motor having a reduction mechanism unit and an electric motor. The electric motor of the windshield wiper motor includes a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled to the yoke, an armature core where a plurality of teeth are formed and fixed onto the rotary shaft, an armature coil wound around teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a plurality of connecting wires connecting two segments arranged to face each other back to back around the rotary shaft, being surrounded by the permanent magnets and arranged within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.

Abstract: Disclosed is a motor in which a commutator (10) is provided with connecting wires which short-circuit equipotential segments; brushes (21) are constituted by a low-speed brush (21a), a high-speed brush (21b), and a common brush (21c) used in common by the low-speed and high-speed brushes, and are juxtaposed along the circumferential direction. The circumferential brush width (W2) of the high-speed brush is set to be smaller than the circumferential brush width (W1) of the low-speed brush. The high-speed brush and the low-speed brush are formed so that simultaneous sliding contact with equipotential segments (15) can be avoided. Additionally, armature cores (8) are provided such that a plurality of teeth (12) is point-symmetrical about a rotary shaft (3) at equal intervals in the circumferential direction, and the teeth and slots (13) are formed so as to exist alternately at intervals of 90 degrees in the circumferential direction.

Abstract: A hypocycloid reducer 70 for reducing rotation of a flat motor 60 to output the speed-reduced rotation to a drum is provided between the drum and the flat motor 60, a rotor shalt member 65 which is rotated with the same rotation number as the flat motor 60 is axially aligned with the drum is provided on the same side as the flat motor 60. An output rotation body 74 for outputting the speed-reduced rotation is axially aligned with the drum and provided on the same side as the drum. Since the rotor shaft member 65 and the output rotation body 74 are axially aligned with the drum, turning force can be transmitted bi-directionally between the rotor shaft member 65 and the output rotation body 74. Therefore, it is possible to eliminate an electromagnetic clutch to reduce the driving apparatus in size and weight, and since wires and control logic of the electromagnetic clutch are not needed for the driving apparatus, the driving apparatus can be reduced in production cost.

Abstract: Disclosed is a motor in which a commutator (10) is provided with connecting wires which short-circuit equipotential segments; brushes (21) are constituted by a low-speed brush (21a), a high-speed brush (21b), and a common brush (21c) used in common by the low-speed and high-speed brushes, and are juxtaposed along the circumferential direction. The circumferential brush width (W2) of the high-speed brush is set to be smaller than the circumferential brush width (W1) of the low-speed brush. The high-speed brush and the low-speed brush are formed so that simultaneous sliding contact with equipotential segments (15) can be avoided. Additionally, armature cores (8) are provided such that a plurality of teeth (12) is point-symmetrical about a rotary shaft (3) at equal intervals in the circumferential direction, and the teeth and slots (13) are formed so as to exist alternately at intervals of 90 degrees in the circumferential direction.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: A semiconductor IC device includes a buried interconnection in interconnection layers over a semiconductor substrate, in which electrical connection of interconnections are provided over and under an interconnection layer of an embedded interconnection from among the interconnection layers such that a first connecting conductor portion within a connecting hole extending from an upper interconnection toward the interconnection layer of a predetermined buried interconnection and a second connecting conductor portion within the connecting hole extending from a lower interconnection toward the interconnection layer of the predetermined buried interconnection are electrically connected via a connecting conductor portion for relay in the connecting groove of the interconnection layer of a predetermined buried interconnection.

Abstract: There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively.

Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate.

Abstract: Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber.

Abstract: A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.