Abstract: Microfeature workpiece substrates having through-substrate vias, and associated methods of formation are disclosed. A method in accordance with one embodiment for forming a support substrate for carrying microfeature dies includes exposing a support substrate to an electrolyte, with the support substrate having a first side with a first conductive layer, a second side opposite the first side with a second conductive layer, and a conductive path extending through the support substrate from the first conductive layer to the second conductive layer. The method can further include forming a bond pad at a bond site of the first conductive layer by disposing at least one conductive bond pad material at the bond site, wherein disposing the at least one conductive bond pad material can include passing an electrical current between the first and second conductive layers via the conductive path, while the substrate is exposed to the electrolyte.

Abstract: An interposer for assembly with a semiconductor die and methods of manufacture are disclosed. The interposer may include at least one passive element at least partially defined by at least one recess formed in at least one dielectric layer of the interposer. The at least one recess may have dimensions selected for forming the passive element with an intended magnitude of at least one electrical property. At least one recess may be formed by removing at least a portion of at least one dielectric layer of an interposer. The at least one recess may be at least partially filled with a conductive material. For instance, moving, by way of squeegee, or injection of a conductive material at least partially within the at least one recess, is disclosed. Optionally, vibration of the conductive material may be employed. A wafer-scale interposer and a system including at least one interposer are disclosed.

Abstract: Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member and at least one die in a stacked configuration attached to the support member. The support member may include a leadframe disposed longitudinally between first and second ends and latitudinally between first and second sides. The leadframe includes a lead extending between the first end and the first side.

Abstract: Microfeature workpiece substrates having through-substrate vias, and associated methods of formation are disclosed. A method in accordance with one embodiment for forming a support substrate for carrying microfeature dies includes exposing a support substrate to an electrolyte, with the support substrate having a first side with a first conductive layer, a second side opposite the first side with a second conductive layer, and a conductive path extending through the support substrate from the first conductive layer to the second conductive layer. The method can further include forming a bond pad at a bond site of the first conductive layer by disposing at least one conductive bond pad material at the bond site, wherein disposing the at least one conductive bond pad material can include passing an electrical current between the first and second conductive layers via the conductive path, while the substrate is exposed to the electrolyte.

Abstract: Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member and at least one die in a stacked configuration attached to the support member. The support member may include a leadframe disposed longitudinally between first and second ends and latitudinally between first and second sides. The leadframe includes a lead extending between the first end and the first side.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. An embodiment of one such method includes forming a plurality of through holes in a substrate with the through holes arranged in arrays, and attaching a plurality of singulated microelectronic dies to the substrate with an active side of the individual dies facing toward the substrate and with a plurality of terminals on the active side of the individual dies aligned with corresponding holes in the substrate. The singulated dies are attached to the substrate after forming the holes in the substrate.

Abstract: Apparatus and methods are disclosed relating to semiconductor assemblies. A semiconductor assembly includes an interposer which may be constructed from a flexible material, such as a polyimide tape. A pattern of conductive traces disposed on a first surface of the interposer is in electrical communication with a semiconductor die attached to the first surface. Interconnect recesses accessible on the opposite second surface expose one or more conductive traces. A conductive element, such as a solder ball, disposed substantially within the interconnect recess allows the assembly to be mounted on a substrate or a similar assembly. By substantially containing the conductive element within the interconnect recess, the height of the completed assembly is reduced. Assemblies may be stacked to form multidie assemblies. Interconnect structures, such as connection pads, or enlarged traces upon the first surface are employed to connect stacked assemblies.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. An embodiment of one such method includes forming a plurality of through holes in a substrate with the through holes arranged in arrays, and attaching a plurality of singulated microelectronic dies to the substrate with an active side of the individual dies facing toward the substrate and with a plurality of terminals on the active side of the individual dies aligned with corresponding holes in the substrate. The singulated dies are attached to the substrate after forming the holes in the substrate.

Abstract: A method is disclosed which includes forming a layer of conductive material above a substrate, forming a masking layer above the layer of conductive material, performing a first etching process on the layer of conductive material with the masking layer in place, removing the masking layer and, after removing the masking layer, performing an isotropic etching process on the layer of conductive material to thereby define a plurality of piercing bond structures positioned on the substrate.

Abstract: A method for assembly and packaging of one or more flip chip-configured semiconductor dice with an interposer substrate to form a flip chip-type semiconductor device assembly. The flip chip-type semiconductor device assembly includes a conductively bumped semiconductor die and an interposer substrate having a plurality of recesses formed therein. The semiconductor die is mounted to the interposer substrate with the conductive bumps disposed in the plurality of recesses so that the die face is adjacent the facing surface of the interposer substrate. One or more openings may be provided in an opposing surface of the interposer substrate which extend to the plurality of recesses and the conductive bumps disposed therein. Dielectric filler material may then be introduced through the one or more openings to the recesses and, optionally, between the semiconductor die and interposer substrate.

Abstract: A method and apparatus for packaging a semiconductor die with an interposer substrate. A semiconductor device assembly includes a conductively bumped semiconductor die and an interposer substrate having multiple recesses formed therein. The semiconductor die is mounted to the interposer substrate with the conductive bumps disposed in the multiple recesses so that an active surface of the semiconductor die is directly mounted to a facing surface of the interposer substrate. One or more openings may be provided in an opposing surface of the interposer substrate which extends to the multiple recesses and the conductive bumps disposed therein and dielectric filler material may be introduced through the one or more openings into the recesses.

Abstract: A semiconductor device for dissipating heat generated by a die during operation and having a low height profile, a semiconductor die package incorporating the device, and methods of fabricating the device and package are provided. In one embodiment, the semiconductor device comprises a thick thermally conductive plane (e.g., copper plane) mounted on a thin support substrate and interfaced with a die. Thermally conductive via interconnects extending through the substrate conduct heat generated by the die from the conductive plane to conductive balls mounted on traces on the opposing side of the substrate. In another embodiment, the semiconductor devices comprises a thick thermally conductive plane (e.g., copper foil) sandwiched between insulative layers, with signal planes (e.g., traces, bonding pads) disposed on the insulative layers, a die mounted on a first signal plane, and solder balls mounted on bonding pads of a second signal plane.

Abstract: An interposer for assembly with a semiconductor die and methods of manufacture are disclosed. The interposer may include at least one passive element at least partially defined by at least one recess formed in at least one dielectric layer of the interposer. The at least one recess may have dimensions selected for forming the passive element with an intended magnitude of at least one electrical property. At least one recess may be formed by removing at least a portion of at least one dielectric layer of an interposer. The at least one recess may be at least partially filled with a conductive material. For instance, moving, by way of squeegee, or injection of a conductive material at least partially within the at least one recess, is disclosed. Optionally, vibration of the conductive material may be employed. A wafer-scale interposer and a system including at least one interposer are disclosed.

Abstract: A semiconductor device for dissipating heat generated by a die during operation and having a low height profile, a semiconductor die package incorporating the device, and methods of fabricating the device and package are provided. In one embodiment, the semiconductor device comprises a thick thermally conductive plane (e.g., copper plane) mounted on a thin support substrate and interfaced with a die. Thermally conductive via interconnects extending through the substrate conduct heat generated by the die from the conductive plane to conductive balls mounted on traces on the opposing side of the substrate. In another embodiment, the semiconductor devices comprises a thick thermally conductive plane (e.g., copper foil) sandwiched between insulative layers, with signal planes (e.g., traces, bonding pads) disposed on the insulative layers, a die mounted on a first signal plane, and solder balls mounted on bonding pads of a second signal plane.

Abstract: Various embodiments of an interposer for mounting a semiconductor die, as well as methods for forming the interposer, are disclosed. The interposer includes flexible solder pad elements that are formed from a core material of the interposer, such that the interposer may absorb thermally induced stresses and conform to warped or uneven surfaces. Embodiments of electronic device packages including a semiconductor die mounted to and electrically connected to the interposer, as well as methods for forming the electronic device packages, are also disclosed. In one electronic device package, the semiconductor die is electrically connected to the interposer with wire bonds attached to a routing layer of the interposer. In another electronic device package, the semiconductor die is electrically connected to the interposer by bonding the semiconductor die to the flexible solder pad elements of the interposer in a flip-chip configuration.

Abstract: Various embodiments of an interposer for mounting a semiconductor die, as well as methods for forming the interposer, are disclosed. The interposer includes flexible solder pad elements that are formed from a core material of the interposer, such that the interposer may absorb thermally induced stresses and conform to warped or uneven surfaces. Embodiments of electronic device packages including a semiconductor die mounted to and electrically connected to the interposer, as well as methods for forming the electronic device packages, are also disclosed. In one electronic device package, the semiconductor die is electrically connected to the interposer with wire bonds attached to a routing layer of the interposer. In another electronic device package, the semiconductor die is electrically connected to the interposer by bonding the semiconductor die to the flexible solder pad elements of the interposer in a flip-chip configuration.

Abstract: A semiconductor device assembly or package includes at least one semiconductor device that is positioned adjacent to floating leads. Such an assembly or package may include at least two semiconductor devices that face opposite directions from one another, with each being oriented such that bond pads thereof are at an opposite side of the assembly from bond pads of the other. Alternatively, an assembly or package may include a lead assembly with an internal portion, including one or more floating leads, and an external portion that are in planes that are offset relative to one another. Methods for designing lead frames, assemblies, and packages are also disclosed, as are assembly and packaging methods.

Abstract: Packaging and encapsulation methods include use of a tape substrate with a mold gate that includes an aperture and a support element that extends over at least a portion of the aperture. The tape substrate may be part of a strip. A semiconductor device is secured and electrically connected to the tape substrate. The resulting assembly is placed into a cavity of a mold, and encapsulant is introduced into the cavity through the mold gate of the tape substrate. Once the encapsulant has sufficiently hardened, the package assembly may be removed from the mold, and a sprue of residual encapsulant removed therefrom. If the package assembly is carried by a strip that carries other package assemblies, it may be removed from the strip.

Abstract: A method for assembly and packaging of one or more flip chip-configured semiconductor dice with an interposer substrate to form a flip chip-type semiconductor device assembly. The flip chip-type semiconductor device assembly includes a conductively bumped semiconductor die and an interposer substrate having a plurality of recesses formed therein. The semiconductor die is mounted to the interposer substrate with the conductive bumps disposed in the plurality of recesses so that the die face is adjacent the facing surface of the interposer substrate. One or more openings may be provided in an opposing surface of the interposer substrate which extend to the plurality of recesses and the conductive bumps disposed therein. Dielectric filler material may then be introduced through the one or more openings to the recesses and, optionally, between the semiconductor die and interposer substrate.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. One such method includes forming a plurality of apertures in a substrate with the apertures arranged in an array, and, after forming the apertures, attaching the substrate to a lead frame having a plurality of pads with the apertures in the substrate aligned with corresponding pads in the lead frame. Another method includes providing a partially cured substrate, coupling the partially cured substrate to a plurality of leads, attaching a microelectronic die to the leads, and electrically connecting the microelectronic die to the leads.