Abstract: Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

Abstract: In various embodiments, disclosed herein are systems and methods directed to the fabrication of a coreless semiconductor package (e.g., a millimeter (mm)-wave antenna package) having an asymmetric build-up layer count that can be fabricated on both sides of a temporary substrate (e.g., a core). The asymmetric build-up layer count can reduce the overall layer count in the fabrication of the semiconductor package and can therefore contribute to fabrication cost reduction. In further embodiments, the semiconductor package (e.g., a millimeter (mm)-wave antenna packages) can further comprise dummification elements disposed near one or more antenna layers. Further, the dummification elements disposed near one or more antenna layers can reduce image current and thereby increasing the antenna gain and efficiency.

Abstract: Embodiments may relate to a communications module comprising with a dispersion compensation module communicatively coupled between a baseband module and a radio frequency (RF) module. The dispersion compensation module may be configured to process a data signal at an intermediate frequency that is between a baseband frequency and a RF frequency. Other embodiments may be described or claimed.

Abstract: In-package radio frequency (RF) waveguides as high bandwidth chip-to-chip interconnects and methods for using the same are disclosed. In one example, an electronic package includes a package substrate, first and second silicon dies or tiles, and an RF waveguide. The first and second silicon dies or tiles are attached to the package substrate. The RF waveguide is formed in the package substrate and interconnects the first silicon die or tile with the second silicon die or tile.

Abstract: In various embodiments, disclosed herein are systems and methods directed to the fabrication of a coreless semiconductor package (e.g., a millimeter (mm)-wave antenna package) having an asymmetric build-up layer count that can be fabricated on both sides of a temporary substrate (e.g., a core). The asymmetric build-up layer count can reduce the overall layer count in the fabrication of the semiconductor package and can therefore contribute to fabrication cost reduction. In further embodiments, the semiconductor package (e.g., a millimeter (mm)-wave antenna packages) can further comprise dummification elements disposed near one or more antenna layers. Further, the dummification elements disposed near one or more antenna layers can reduce image current and thereby increasing the antenna gain and efficiency.

Abstract: Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

Abstract: Various devices, systems, and/or methods perform wireless chip to chip high speed data transmission. Strategies for such transmission include use of improved microbump antennas, wireless chip to chip interconnects, precoding and decoding strategies, channel design to achieve spatial multiplexing gain in line of sight transmissions, open cavity chip design for improved transmission, and/or mixed signal channel equalization.

Abstract: Embodiments herein relate to systems, apparatuses, techniques, or processes for stiffeners for a surface of a package substrate, where the stiffeners provide EMI/RFI shielding for signal traces or other electrical routings within the package, and in particular for traces at a surface of the package such as microstrip routings. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein relate to systems, apparatuses, techniques or processes for packages that include a die complex with a base die that is coupled with a HDP substrate that in turn is coupled with an mSAP board. The HDP substrate may have a small trace width and trace spacing, for example three ?m or less, that enable the HDP substrate to be used as a pitch translator between the base die and the mSAP board, for example between a 110 ?m pitch and a 210 ?m pitch. One or more DRAM modules may be coupled with the mSAP board. The configuration has a reduced overall package height. Other embodiments may be described and/or claimed.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a die. In an embodiment, a package substrate is coupled to the die. In an embodiment, a ring is provided under the package substrate. In an embodiment, the ring comprises a conductive material. In an embodiment, the electronic package further comprises balls outside of the ring.

Abstract: Embodiments herein relate to systems, apparatuses, techniques, or processes directed to an electrical conductor, or power corridor, on the outside of a package substrate, wherein the electrical conductor is raised, or extends from a surface of the package substrate. In embodiments, this electrical conductor may be used to reduce the number of layers required within the package substrate by removing power planes within the substrate to the electrical conductors on the surface of the package. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to a stiffener for a surface of a semiconductor package, where the stiffener includes slots that allow a gasket to go over the stiffener to electrically couple with a ground or a VSS of the semiconductor package. In embodiments, the gasket may include a material that blocks or absorbs EMI or RFI. Other embodiments may be described and/or claimed.

Abstract: In various aspects, a device-to-device communication system is provided including a first device and a second device. Each of the first device and the second device includes an antenna, a radio frequency frond-end circuit, and a baseband circuit. Each of the first device and the second device are at least one of a chiplet or a package. The device-to-device communication system further includes a cover structure housing the first device and the second device. Each of the first device and the second device are at least one of a chiplet or a package. The device-to-device communication system further includes a radio frequency signal interface wirelessly communicatively coupling the first device and the second device. The radio frequency signal interface includes the first antenna and the second antenna.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for creating packages that include one or more memory modules with electrically conductive strips on the side of the memory module to route power or provide a ground to multiple BGA contacts on a side of the memory module coupled with a substrate. Providing power and/or ground in this manner enables fewer layers to be used in a substrate that are no longer needed to be routed in the power plane on the substrate, thus reducing a Z-height of the package. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein relate to systems, apparatuses, techniques or processes directed to a package that include a substrate with a glass core, with one or more grounded coplanar waveguides placed on one or both surfaces of the glass core. The one or more grounded coplanar waveguides may then be used for high-speed communication between two dies, such as a compute die and a memory die, coupled with the substrate. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for packages that include a high-speed transmission line that is routed from a compute die on a substrate under a silicon die that is next to the compute die on the substrate. The silicon die includes a ground plane above the high-speed transmission line. The high-speed transmission line is at least partially between the ground plane of the silicon die and another ground plane within the substrate. Other embodiments may be described and/or claimed.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate with a first memory die stack on the package substrate, and a second memory die stack on the package substrate. In an embodiment, an electrically insulating layer is provided over the first memory die stack and the second memory die stack. In an embodiment, an opening is provided through the electrically insulating layer, and a die module is in the opening over the package substrate.

Abstract: Thermally conductive, electrically insulating materials and their manufacture on integrated circuit (IC) dies. An IC die may include a substrate with transistors on one side and, on the first and/or a second side, electrically insulating materials enhanced with thermally conductive materials. Such an IC die may be included in a system with a power supply. Such materials may be co-deposited, or interspersed, or interleaved together in a composite material.

Abstract: Embodiments disclosed herein include an electronic package. In an embodiment, the electronic package comprises a package substrate with a cutout. In an embodiment, pads are adjacent to the cutout. In an embodiment, a memory die stack is on the package substrate, where the memory die stack is electrically coupled to the pads by routing in the package substrate. In an embodiment, a die is over the cutout, where the die is supported by the pads.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, and a die coupled to the package substrate. In an embodiment, a stiffener is around the die and over the package substrate. In an embodiment, an electrically non-conductive underfill is around first level interconnects (FLIs) between the package substrate and the die. In an embodiment, an electrically conductive layer is around the non-conductive underfill.