Abstract: Embodiments of the invention include a microelectronic device that includes a first substrate having radio frequency (RF) components and a second substrate that is coupled to the first substrate. The second substrate includes a first conductive layer of an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher. A mold material is disposed on the first and second substrates. The mold material includes a first region that is positioned between the first conductive layer and a second conductive layer of the antenna unit with the mold material being a dielectric material to capacitively couple the first and second conductive layers of the antenna unit.

Abstract: Embodiments may relate to a radio frequency (RF) front-end module (FEM) that includes an acoustic wave resonator (AWR) die. The RF FEM may further include an active die coupled with the package substrate of the RF FEM. When the active die is coupled with the package substrate, the AWR die may be between the active die and the package substrate. Other embodiments may be described or claimed.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device. In this arrangement, heat can become trapped inside the device. Metal fill, such as copper, is formed within a portion of the device, e.g., over the semiconductor devices and any front side interconnect structures, to transfer heat away from the semiconductor devices and towards a heat spreader.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device, and integrated inductors formed over the semiconductor devices. Power delivery to the device is on the opposite side of the semiconductor devices. The integrated inductors may be used for power step-down to reduce device thickness and/or a number of power rails.

Abstract: Disclosed herein is a millimeter-wave dielectric waveguide connector that includes a first connector interface, a second connector interface, a dielectric material exposed at the first connector interface and the second connector interface, and a metal structure around the dielectric material, wherein the metal structure includes a flared portion at the first connector interfacea.

Abstract: Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

Abstract: Embodiments of the invention include an electrical package and methods of forming the package. In one embodiment, a transformer may be formed in the electrical package. The transformer may include a first conductive loop that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first conductive loop from a second conductive loop that is formed in the package. Additional embodiments of the invention include forming a capacitor formed in the electrical package. For example, the capacitor may include a first capacitor plate that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first capacitor plate form a second capacitor plate that is formed in the package. The thin dielectric spacer material in the transformer and capacitor allow for increased coupling factors and capacitance density in electrical components.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device. In this arrangement, heat can become trapped inside the device. Metal fill, such as copper, is formed within a portion of the device, e.g., over the semiconductor devices and any front side interconnect structures, to transfer heat away from the semiconductor devices and towards a heat spreader.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device, and integrated inductors formed over the semiconductor devices. Power delivery to the device is on the opposite side of the semiconductor devices. The integrated inductors may be used for power step-down to reduce device thickness and/or a number of power rails.

Abstract: Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

Abstract: In various embodiments, disclosed herein are systems and methods directed to the fabrication of a coreless semiconductor package (e.g., a millimeter (mm)-wave antenna package) having an asymmetric build-up layer count that can be fabricated on both sides of a temporary substrate (e.g., a core). The asymmetric build-up layer count can reduce the overall layer count in the fabrication of the semiconductor package and can therefore contribute to fabrication cost reduction. In further embodiments, the semiconductor package (e.g., a millimeter (mm)-wave antenna packages) can further comprise dummification elements disposed near one or more antenna layers. Further, the dummification elements disposed near one or more antenna layers can reduce image current and thereby increasing the antenna gain and efficiency.

Abstract: Embodiments may relate to a communications module comprising with a dispersion compensation module communicatively coupled between a baseband module and a radio frequency (RF) module. The dispersion compensation module may be configured to process a data signal at an intermediate frequency that is between a baseband frequency and a RF frequency. Other embodiments may be described or claimed.

Abstract: In-package radio frequency (RF) waveguides as high bandwidth chip-to-chip interconnects and methods for using the same are disclosed. In one example, an electronic package includes a package substrate, first and second silicon dies or tiles, and an RF waveguide. The first and second silicon dies or tiles are attached to the package substrate. The RF waveguide is formed in the package substrate and interconnects the first silicon die or tile with the second silicon die or tile.

Abstract: In various embodiments, disclosed herein are systems and methods directed to the fabrication of a coreless semiconductor package (e.g., a millimeter (mm)-wave antenna package) having an asymmetric build-up layer count that can be fabricated on both sides of a temporary substrate (e.g., a core). The asymmetric build-up layer count can reduce the overall layer count in the fabrication of the semiconductor package and can therefore contribute to fabrication cost reduction. In further embodiments, the semiconductor package (e.g., a millimeter (mm)-wave antenna packages) can further comprise dummification elements disposed near one or more antenna layers. Further, the dummification elements disposed near one or more antenna layers can reduce image current and thereby increasing the antenna gain and efficiency.

Abstract: Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

Abstract: Various devices, systems, and/or methods perform wireless chip to chip high speed data transmission. Strategies for such transmission include use of improved microbump antennas, wireless chip to chip interconnects, precoding and decoding strategies, channel design to achieve spatial multiplexing gain in line of sight transmissions, open cavity chip design for improved transmission, and/or mixed signal channel equalization.

Abstract: Embodiments herein relate to systems, apparatuses, techniques, or processes for stiffeners for a surface of a package substrate, where the stiffeners provide EMI/RFI shielding for signal traces or other electrical routings within the package, and in particular for traces at a surface of the package such as microstrip routings. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein relate to systems, apparatuses, techniques, or processes directed to an electrical conductor, or power corridor, on the outside of a package substrate, wherein the electrical conductor is raised, or extends from a surface of the package substrate. In embodiments, this electrical conductor may be used to reduce the number of layers required within the package substrate by removing power planes within the substrate to the electrical conductors on the surface of the package. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein relate to systems, apparatuses, techniques or processes for packages that include a die complex with a base die that is coupled with a HDP substrate that in turn is coupled with an mSAP board. The HDP substrate may have a small trace width and trace spacing, for example three ?m or less, that enable the HDP substrate to be used as a pitch translator between the base die and the mSAP board, for example between a 110 ?m pitch and a 210 ?m pitch. One or more DRAM modules may be coupled with the mSAP board. The configuration has a reduced overall package height. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to a stiffener for a surface of a semiconductor package, where the stiffener includes slots that allow a gasket to go over the stiffener to electrically couple with a ground or a VSS of the semiconductor package. In embodiments, the gasket may include a material that blocks or absorbs EMI or RFI. Other embodiments may be described and/or claimed.