Abstract: Embodiments disclosed herein include a communication module. In an embodiment, the communication module comprises a package substrate, and a die on the package substrate. In an embodiment, a plurality of antennas are around the die. In an embodiment, the plurality of antennas are coupled to the die by a plurality of traces, and heights of each of the plurality of antennas is greater than a thickness of the traces.

Abstract: Embodiments disclosed herein include a die module. In an embodiment, the die module comprises a die with a first surface and a second surface. In an embodiment, a first pad is on the second surface of the die, where a top surface of the first pad is substantially coplanar with the second surface. In an embodiment, the die module comprises an antenna module with a third surface and a fourth surface. In an embodiment, a second pad is on the third surface of the antenna module, where a bottom surface of the second pad is substantially coplanar with the third surface. In an embodiment, the top surface of the first pad directly contacts the bottom surface of the second pad.

Abstract: An antenna device includes integrated polymer nanocomposite (PNC) devices coupling an antenna on a substrate to both ground and signal terminals. The PNC devices may include PNC material between two electrodes. The PNC devices may be integrated into the antenna device with the substrate including at least one electrode of each of the PNC devices. One PNC device may convey a signal to or from the antenna, e.g., between the antenna and a signal terminal. Another PNC device may convey an electrostatic discharge (ESD) pulse to a ground terminal. The antenna device may include or be coupled to an integrated circuit (IC) die. The IC die may couple to the signal and ground terminals, e.g., opposite the substrate from the antenna.

Abstract: An antenna device includes an antenna on a substrate, a low-impedance electrostatic discharge (ESD) path for an ESD pulse from the antenna to a ground terminal, and a signal path between the antenna and either a signal terminal or an integrated circuit (IC) die. The ESD and signal paths may each include separate vias through the substrate. A capacitor may couple a signal to or from the antenna and the signal terminal (or IC die) but block low-frequency power (such as an ESD pulse). The ESD path has an electrical length of a quarter of the wavelength and so may present a high impedance to ground for the signal. The antenna device may include or be coupled to an IC die. The IC die may couple to the signal and ground terminals, e.g., opposite the substrate from the antenna.

Abstract: Embodiments disclosed herein include a die module. In an embodiment, the die module comprises a die with a first surface and a second surface. In an embodiment, a first pad is on the second surface of the die, and a dielectric layer is over the second surface of the die and the first pad. In an embodiment, an antenna module is over the dielectric layer, where the antenna module comprises a second pad that is aligned over the first pad.

Abstract: Embodiments disclosed herein include a package substrate. In an embodiment, the package substrate comprises a core with a first surface and a second surface, where the core comprises a glass layer. In an embodiment, a first routing layer is over the first surface of the core, where the first routing layer comprises traces with a first width. In an embodiment, a second routing layer is over the second surface of the core, where the second routing layer comprises traces with a second width that is smaller than the first width.

Abstract: Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

Abstract: Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

Abstract: Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

Abstract: Disclosed herein are electronic assemblies, integrated circuit (IC) packages, and communication devices implementing three-dimensional power combiners. An electronic assembly may include a first die, comprising a first transmission line, and a second die, comprising a second transmission line. Each die includes a first face and an opposing second face, and the second die is stacked above the first die so that the first face of the second die is coupled to the second face of the first die. The electronic assembly further includes a first conductive pathway between one end of the first transmission line and a first connection point at the first face of the first die, a second conductive pathway between one end of the second transmission line and a second connection point at the first face of the first die, and a third conductive pathway between the other ends of the first and second transmission lines.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device. In this arrangement, heat can become trapped inside the device. A microfluidic cooling layer is formed near a top or front the device, e.g., over the semiconductor devices and any front side interconnect structures, to transfer heat away from the semiconductor devices.

Abstract: Embodiments may relate to a baseband module with communication pathways for a first data signal and a second data signal. The baseband module may also include a finite impulse response (FIR) filter in a communication path between the first signal input and the second signal output. Other embodiments may be described or claimed.

Abstract: Embodiments of the invention include a microelectronic device that includes a first substrate having radio frequency (RF) components and a second substrate that is coupled to the first substrate. The second substrate includes a first conductive layer of an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher. A mold material is disposed on the first and second substrates. The mold material includes a first region that is positioned between the first conductive layer and a second conductive layer of the antenna unit with the mold material being a dielectric material to capacitively couple the first and second conductive layers of the antenna unit.

Abstract: Embodiments may relate to a radio frequency (RF) front-end module (FEM) that includes an acoustic wave resonator (AWR) die. The RF FEM may further include an active die coupled with the package substrate of the RF FEM. When the active die is coupled with the package substrate, the AWR die may be between the active die and the package substrate. Other embodiments may be described or claimed.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device. In this arrangement, heat can become trapped inside the device. Metal fill, such as copper, is formed within a portion of the device, e.g., over the semiconductor devices and any front side interconnect structures, to transfer heat away from the semiconductor devices and towards a heat spreader.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device, and integrated inductors formed over the semiconductor devices. Power delivery to the device is on the opposite side of the semiconductor devices. The integrated inductors may be used for power step-down to reduce device thickness and/or a number of power rails.

Abstract: Disclosed herein is a millimeter-wave dielectric waveguide connector that includes a first connector interface, a second connector interface, a dielectric material exposed at the first connector interface and the second connector interface, and a metal structure around the dielectric material, wherein the metal structure includes a flared portion at the first connector interfacea.

Abstract: Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

Abstract: Embodiments of the invention include an electrical package and methods of forming the package. In one embodiment, a transformer may be formed in the electrical package. The transformer may include a first conductive loop that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first conductive loop from a second conductive loop that is formed in the package. Additional embodiments of the invention include forming a capacitor formed in the electrical package. For example, the capacitor may include a first capacitor plate that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first capacitor plate form a second capacitor plate that is formed in the package. The thin dielectric spacer material in the transformer and capacitor allow for increased coupling factors and capacitance density in electrical components.

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device. In this arrangement, heat can become trapped inside the device. Metal fill, such as copper, is formed within a portion of the device, e.g., over the semiconductor devices and any front side interconnect structures, to transfer heat away from the semiconductor devices and towards a heat spreader.