Abstract: A SLDRAM System is provided with a plurality of in-circuit, calibratable memory modules and a memory controller for issuing unicast and multicast command packets to the memory modules. Command packets are transmitted over a unidirectional command link that includes a complementary pair of command clock lines, a command FLAG line and a plurality of noncomplemented command bit lines. Each of the command clock lines, command bit lines and the FLAG line is a SLIO transmission line. Data transfer operations are carried out in response to the command packets over one or more bidirectional data links that each includes two complementary pairs of data clock lines, and a plurality of noncomplemented data bit lines. Each of the data clock lines and the data bit lines is a SLIO transmission line. Each SLIO transmission line is single-end terminated and preferably tapped into by way of stub resistors.

Abstract: A semiconductor package for vertically surface mounting to a printed circuit board having retention apparatus for holding the package thereto.

Abstract: A semiconductor device (such as a DRAM) includes a memory array that has dynamic memory cells. In a self refresh test mode, a self refresh test mode controller monitors and/or controls various blocks and internal signals in semiconductor device. The self refresh test mode controller may communicate with a remote testing device through various conductors including one or more DQ lines and/or one or more address lines.

Abstract: A synchronization circuit performs bit-to-bit timing correction of respective digital signals in digital signal packets applied to a packetized memory device. Each digital signal packet includes a plurality of digital signals applied to respective latches in the packetized memory device. A clock generator circuit generates a plurality of internal clock signals responsive to the external clock signal, each internal clock signal having a corresponding phase relative to the external clock signal. A plurality of selection circuits are coupled to the clock generator circuit and each has an output coupled to a clock terminal of an associated latch. Each selection circuit applies one of the internal clock signals to clock the associated latch in response to a phase command signal. An evaluation circuit receives digital signals sequentially stored in a selected one of the latches and generates a results signal indicating whether each of the digital signals has an expected value.

Abstract: A synchronous dynamic random access memory (“SDRAM”) operates with matching read and write latencies. To prevent data collision at the memory array, the SDRAM includes interim address and interim data registers that temporarily store write addresses and input data until an available interval is detected where no read data or read addresses occupy the memory array. During the available interval, data is transferred from the interim data register to a location in the memory array identified by the address in the interim array register. In one embodiment, the SDRAM also includes address and compare logic to prevent reading incorrect data from an address to which the proper data has not yet been written. In another embodiment, a system controller monitors commands and addresses and inserts no operation commands to prevent such collision of data and addresses.

Abstract: A semiconductor package for vertically surface mounting to a printed circuit board having retention apparatus for holding the package thereto.

Abstract: A method and associated apparatus is provided for improving the performance of a high speed memory bus using switches. Bus reflections caused by electrical stubs are substantially eliminated by connecting system components in a substantially stubless configuration using a segmented bus wherein bus segments are connected through switches. The switches disconnect unused bus segments during operations so that communicating devices are connected in an substantially point-to-point communication path.

Abstract: A semiconductor package for vertically surface mounting to a printed circuit board having retention apparatus for holding the package thereto.

Abstract: A semiconductor package for vertically surface mounting to a printed circuit board having retention apparatus for holding the package thereto.

Abstract: A semiconductor device (such as a DRAM) includes a memory array that has dynamic memory cells. In a self refresh test mode, a self refresh test mode controller monitors and/or controls various blocks and internal signals in semiconductor device. The self refresh test mode controller may communicate with a remote testing device through various conductors including one or more DQ lines and/or one or more address lines.

Abstract: An apparatus and method for independently adjusting or calibrating the characteristics of multiple drivers for output buffer circuits without significantly increasing the associated necessary circuitry is disclosed. A central control logic circuit initiates the calibration process of the drivers. A serial communication link is provided between the control logic and each of the output drivers. The serial link reduces the number of lines that are required to communicate between the central control logic and the multiple output drivers. The output drivers can be calibrated one at a time, and a handoff is made from one driver to the next to start the calibration of the subsequent driver.

Abstract: A method and apparatus for monitoring the response times of computer system components in order to improve computer system reliability and performance are provided. The method and apparatus are particularly applicable to computer systems with memory circuits, such as SLDRAMs, that have programmable response times. A response time monitoring circuit in the form of a phase detector includes a plurality of flip-flops with the data inputs commonly connected to receive a response ready signal from a component, such as a memory circuit, in response to a command to perform a task. Each clock input of the flip-flop is connected to a clock signal at a different phase of a response period. The outputs of the flip-flops determine the phase at which the response ready signal was generated by the component.

Abstract: A synchronization circuit performs bit-to-bit timing correction of respective digital signals in digital signal packets applied to a packetized memory device. Each digital signal packet includes a plurality of digital signals applied to respective latches. A clock generator circuit generates a plurality of internal clock signals responsive to the external clock signal, each internal clock signal having a corresponding phase relative to the external clock signal. A plurality of selection circuits applies respective internal clock signals to respective latches in response to a phase command signal. An evaluation circuit receives digital signals sequentially stored in a selected one of the latches and generates a results signal indicating whether each of the digital signals has an expected value.

Abstract: A semiconductor package for vertically surface mounting to a printed circuit board having retention apparatus for holding the package thereto.

Abstract: An active termination circuit is incorporated into the devices connected to a multidrop bus. By including the active termination circuit on the devices instead of the bus, termination resistors can be removed from the system PCB, which saves costs and frees up precious space on the PCB. The active termination circuit has a termination enabled state and a termination disabled state. The active termination circuit is selectively placed into the enabled or disabled states in specified devices depending upon, for example, device location or communication traffic on the bus. The multidrop system can also utilize a separate passive termination mechanism in combination with the active termination circuits utilized in the devices.

Abstract: A synchronous dynamic random access memory (“SDRAM”) operates with matching read and write latencies. To prevent data collision at the memory array, the SDRAM includes interim address and interim data registers that temporarily store write addresses and input data until an available interval is located where no read data or read addresses occupy the memory array. During the available interval, data is transferred from the interim data register to a location in the memory array identified by the address in the interim array register. In one embodiment, the SDRAM also includes address and compare logic to prevent reading incorrect data from an address to which the proper data has not yet been written. In another embodiment, a system controller monitors commands and addresses and inserts no operation commands to prevent such collision of data and addresses.

Abstract: A synchronous dynamic random access memory (“SDRAM”) operates with matching read and write latencies. To prevent data collision at the memory array, the SDRAM includes interim address and interim data registers that temporarily store write addresses and input data until an available interval is located where no read data or read addresses occupy the memory array. During the available interval, data is transferred from the interim data register to a location in the memory array identified by the address in the interim array register. In one embodiment, the SDRAM also includes address and compare logic to prevent reading incorrect data from an address to which the proper data has not yet been written. In another embodiment, a system controller monitors commands and addresses and inserts no operation commands to prevent such collision of data and addresses.

Abstract: A synchronous dynamic random access memory (“SDRAM”) operates with matching read and write latencies. To prevent data collision at the memory array, the SDRAM includes interim address and interim data registers that temporarily store write addresses and input data until an available interval is located where no read data or read addresses occupy the memory array. During the available interval, data is transferred from the interim data register to a location in the memory array identified by the address in the interim array register. In one embodiment, the SDRAM also includes address and compare logic to prevent reading incorrect data from an address to which the proper data has not yet been written. In another embodiment, a system controller monitors commands and addresses and inserts no operation commands to prevent such collision of data and addresses.

Abstract: A synchronous dynamic random access memory (“SDRAM”) operates with matching read and write latencies. To prevent data collision at the memory array, the SDRAM includes interim address and interim data registers that temporarily store write addresses and input data until an available interval is located where no read data or read addresses occupy the memory array. During the available interval, data is transferred from the interim data register to a location in the memory array identified by the address in the interim array register. In one embodiment, the SDRAM also includes address and compare logic to prevent reading incorrect data from an address to which the proper data has not yet been written. In another embodiment, a system controller monitors commands and addresses and inserts no operation commands to prevent such collision of data and addresses.

Abstract: A synchronous dynamic random access memory (“SDRAM”) operates with matching read and write latencies. To prevent data collision at the memory array, the SDRAM includes interim address and interim data registers that temporarily store write addresses and input data until an available interval is located where no read data or read addresses occupy the memory array. During the available interval, data is transferred from the interim data register to a location in the memory array identified by the address in the interim array register. In one embodiment, the SDRAM also includes address and compare logic to prevent reading incorrect data from an address to which the proper data has not yet been written. In another embodiment, a system controller monitors commands and addresses and inserts no operation commands to prevent such collision of data and addresses.