Abstract: An object is to provide a semiconductor device with excellent reproducibility which is manufactured at low cost. A manufacturing method of a semiconductor device includes steps of forming a first electrode over a substrate; forming an insulating layer over the substrate and the first electrode; pressing a mold against the insulating layer to form an opening in the insulating layer; separating the mold from the insulating layer in which the opening is formed; hardening the insulating layer in which the opening is formed to form a partition wall; forming a light-emitting layer over the first electrode and the partition wall; and forming a second electrode over the light-emitting layer. The insulating layer contains a thermosetting resin material or a light curable resin material. The partition wall has a cross-sectional taper angle of 20 to 50°, and edges of a top and bottom thereof are rounded.

Abstract: It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-definition and high-quality display device with high yield at low cost with the use of the insulating layer. In a method for manufacturing a semiconductor device according to the invention, a semiconductor layer is formed; an insulating layer is formed over the semiconductor layer; a wiring layer connected to the semiconductor layer is formed in an opening provided in the insulating layer; and an electrode layer connected to the wiring layer is formed. The insulating layer is formed by spin coating with a composition containing an insulating material, which has a viscosity of from 10 mPa·s to 50 mPa·s.

Abstract: One pixel is divided into a first region including a first light emitting element and a second region including a second light emitting element, wherein the first region emits light in one direction and the second region emits light in the direction opposite to that of the first region. Independently driving the first light emitting element and the second light emitting element allows images to be displayed independently on the surface.

Abstract: It is an object of the present invention to provide a method of manufacturing a display device, which can display images favorably by insulating a short-circuit portion between an anode and a cathode. Further, it is another object of the invention to provide a method of manufacturing a display device, which can prevent intrusion of moisture so as to inhibit deterioration of a light emitting element when the short-circuit portion between the anode and the cathode is insulated. Specifically, the invention provide a method of manufacturing a display device, wherein a reverse bias voltage is applied to the light emitting element including an electro-luminescent material between the anode and the cathode so as to insulate the short-circuit portion between the anode and the cathode at a temperature of from ?40° C. to 8° C., more preferably, from ?25° C. to 8° C.

Abstract: One pixel is divided into a first region including a first light emitting element and a second region including a second light emitting element, wherein the first region emits light in one direction and the second region emits light in the direction opposite to that of the first region. Independently driving the first light emitting element and the second light emitting element allows images to be displayed independently on the surface.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor device that can suppress generation of a crack and peeling in a resin BM and deterioration of coverage of an upper layer of the resin BM, even if a black resin is used as a material of the resin BM in order to improve a contrast of brightness and a contrast of color.

Abstract: It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. In a manufacturing method comprising the steps of forming a first conductive layer connected to an element and a second conductive layer thereover; forming a resist mask over the second conductive layer; processing the second conductive layer by dry etching with the use of the mask; and processing the first conductive layer by wet etching with the mask left, wherein the etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching, and wherein the etching rate of the second conductive layer is the same as or more than that of the first conductive layer in the wet etching.

Abstract: It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-definition and high-quality display device with high yield at low cost with the use of the insulating layer. In a method for manufacturing a semiconductor device according to the invention, a semiconductor layer is formed; an insulating layer is formed over the semiconductor layer; a wiring layer connected to the semiconductor layer is formed in an opening provided in the insulating layer; and an electrode layer connected to the wiring layer is formed. The insulating layer is formed by spin coating with a composition containing an insulating material, which has a viscosity of from 10 mP·s to 50 mP·s.

Abstract: It is an object of the present invention to provide a method of manufacturing a display device, which can display images favorably by insulating a short-circuit portion between an anode and a cathode. Further, it is another object of the invention to provide a method of manufacturing a display device, which can prevent intrusion of moisture so as to inhibit deterioration of a light emitting element when the short-circuit portion between the anode and the cathode is insulated. Specifically, the invention provide a method of manufacturing a display device, wherein a reverse bias voltage is applied to the light emitting element including an electro-luminescent material between the anode and the cathode so as to insulate the short-circuit portion between the anode and the cathode at a temperature of from ?40° C. to 8° C., more preferably, from ?25° C. to 8° C.

Abstract: A static key interface circuit has an input terminal coupled to N key switches, where N is an integer greater than one. The N key switches are biased at different potentials, which are supplied to the input terminal when the key switches are closed. A multilevel detector in the key interface circuit detects the potential of the input terminal and generates corresponding result data. A dynamic key interface circuit has an input terminal coupled to P rows of N key switches each and scans the P rows in turn, using a similar multilevel detector. The multilevel detector increases the number of key switches connectable to a single input terminal by a factor of N.

Abstract: Disclosed herein is an LCD driver circuit comprising a plurality of cascade-connected LCD drivers. The LCD driver circuit can be activated to make a latch pulse signal input thereto active on the trailing edge thereof and operated even if a corresponding clock pulse signal is input in confronting relationship during a period in which the latch pulse signal is being input. Each of the LCD drivers has a latch pulse control circuit for selecting either one of a first latch pulse signal and a second latch pulse signal generated corresponding to the first latch pulse signal in accordance with an enable signal input at the time the LCD drivers are cascaded, thereby controlling an enable latch circuit and a shift register.

Abstract: A cascaded driver circuit has two or more stages connected to a common serial data signal line and a common clock pulse signal line. Each stage has a counter circuit for dividing the frequency of the clock pulse signal and an enable latch circuit for latching an enable signal, received from the preceding stage, in response to the divided clock pulses. A data latching circuit in each stage latches serial data in response to the clock pulse signal, starting when the enable signal is latched and stopping when a first number of bits of serial data have been latched. An enable output circuit in each stage sends an enable signal to the next stage when the data latching circuit has latched a second number of bits, the second number being at least two less than the first number.