Patents by Inventor Teruyuki Hayashi
Teruyuki Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090065027Abstract: A substrate cleaning apparatus is capable of cleaning an entire periphery of a substrate end portion at a time by simple control without polishing the end portion and without generating plasma. The substrate cleaning apparatus has a mounting table 204 on which a wafer W is placed, a heating unit 210 for heating a wafer end portion, ultraviolet application unit 220 for applying ultraviolet to the wafer end portion, and a gas flow forming unit 230 for forming a gas flow on the surface of the wafer end portion. The heating unit, the ultraviolet application unit, and the gas flow forming unit are disposed near the wafer end portion so as to surround the wafer.Type: ApplicationFiled: April 4, 2007Publication date: March 12, 2009Applicant: Tokyo Electron LimitedInventors: Shigeru Kawamura, Teruyuki Hayashi
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Publication number: 20080302762Abstract: A disclosed method of analyzing a quartz member includes steps of supplying an etchant to an etchant receiving portion formed concavely in the quartz member so as to etch the quartz member; and analyzing the etchant used in the supplying step.Type: ApplicationFiled: May 28, 2007Publication date: December 11, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuya Dobashi, Teruyuki Hayashi, Kohei Tsugita, Misako Saito
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Publication number: 20080274288Abstract: A gas exhaust unit evacuates the inside of a vacuum transfer chamber at a constant exhaust rate. An gas exhaust valve is kept normally open, and a purge gas (N2 gas) is supplied from a purge gas supply source into the vacuum transfer chamber via a mass flow controller (MFC) and an opening/closing valve. A main control unit controls a pressure in the vacuum transfer chamber to be within a specified range through a flow rate set value for the MFC while monitoring a pressure in the vacuum transfer chamber via a vacuum gauge. The main control unit determines occurrence of abnormality when the pressure exceeds a specified upper limit and then takes such actions as changing a flow rate set value for the MFC, giving an alarm and stopping the operation of a vacuum processing apparatus.Type: ApplicationFiled: July 9, 2008Publication date: November 6, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Masaki KONDO, Teruyuki Hayashi, Misako Saito
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Publication number: 20080239283Abstract: The present invention relates to a particle measuring method for irradiating light to a surface of a substrate to scatter the light so as to measure a condition of particles on the substrate based on the scattered light. The particle measuring method according to the present invention comprises the steps of: heating a certain liquid to obtain a steam; supplying the steam onto a substrate so that a content of the steam is absorbed by each particle, while a temperature of the substrate is maintained in such a manner that the steam does not condense on the substrate; cooling the substrate before the particle dries so that the content absorbed by the particle is solidified, while preventing generation of solidified substance on regions of the surface of the substrate to which no particle adheres; and irradiating light to the substrate to scatter the light and detecting the scattered light, under a condition in which the content absorbed by the particle has been solidified.Type: ApplicationFiled: March 27, 2008Publication date: October 2, 2008Inventors: Akitake Tamura, Kaoru Fujihara, Teruyuki Hayashi
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Publication number: 20080230096Abstract: The device forms a flow of a back-side gas over a back-side surface of the end portion of the wafer undergoing a cleaning process executed by radiating an electromagnetic wave such as an ultraviolet ray onto the end portion of the wafer. During the cleaning process, a flow of front-side gas directed along a direction matching the direction of the back-side gas is also formed over the front-side surface of the end portion of the wafer. The flow velocity of the back-side gas is set higher than the flow velocity of the front-side gas. As a result, a descending gas current is created to flow from the wafer front side toward the wafer back side at a gap between the wafer end portion and a partitioning plate, which makes it possible to reliably prevent an active species formed on the back side of the wafer end portion from reaching over to the wafer front side.Type: ApplicationFiled: March 20, 2008Publication date: September 25, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Shigeru KAWAMURA, Teruyuki Hayashi
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Patent number: 7420118Abstract: An electric wire with coating of polyvinyl chloride family resin composition is disclosed which has a coating layer containing a polyvinyl chloride family resin composition comprising polyvinyl chloride family resin and one or more compounds selected from calcium soap, zinc soap and hydrotalcite. The polyvinyl chloride composition does not comprise either or both of a lead compound and a ?-diketone compound having a melting point less than 100° C. A plasticizer can be further added to the composition so as to obtain a heat-stable vinyl chloride composition. A cable covered with the polyvinyl chloride family resin composition is also disclosed, including a cable having electric wires coated with the polyvinyl chloride family resin composition.Type: GrantFiled: April 25, 2005Date of Patent: September 2, 2008Assignees: Tokyo Electron Limited, Taisei Corporation, Hitachi Cable, Ltd.Inventors: Kiyoshi Watanabe, Hiroyuki Ito, Misako Saito, Teruyuki Hayashi, Naoya Hirayama, Sadao Kobayashi, Yoshihide Wakayama
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Patent number: 7208428Abstract: A thermal treatment apparatus 1 includes a reaction tube 2 for containing wafers 10 contaminated with organic substances having a heater 12 capable of heating the reaction tube; a first gas supply pipe 13 for carrying oxygen gas into the reaction tube 2; and a second gas supply pipe 14 for carrying hydrogen gas into the reaction tube 2. Oxygen gas and hydrogen gas are supplied through the first gas supply pipe 13 and the second gas supply pipe 14, respectively, into the reaction tube 2, and the heater 12 heats the reaction tube 2 at a temperature capable of activating oxygen gas and hydrogen gas. A combustion reaction occurs in the reaction tube 2 and thereby the organic substances adhering to the wafers 10 are oxidized, decomposed and removed.Type: GrantFiled: December 4, 2001Date of Patent: April 24, 2007Assignee: Tokyo Electron LimitedInventors: Shingo Hishiya, Yoshikazu Furusawa, Teruyuki Hayashi, Misako Saito, Kota Umezawa, Syoichi Sato
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Publication number: 20070008638Abstract: An examination assistant device (3) is used for examination in which a process solution containing an etching solution is held in contact with an examination objective portion of a quartz pole member (21) of a semiconductor processing apparatus, and then the process solution is analyzed to identify a metal impurity contained in the examination objective portion. The pole member (21) includes a pair of concave portions (22) disposed one on either side of the examination objective portion. The examination assistant device (3) includes a pair of end plates (32) configured to engage with the pair of concave portions, a frame (30) connecting the pair of end plates, and a solution receiver (31) disposed between the pair of end plates. The solution receiver (31) has dimensions to store the process solution and hold the process solution in contact with the examination objective portion.Type: ApplicationFiled: September 6, 2004Publication date: January 11, 2007Applicant: TOKYO ELECTON LIMITEDInventors: Masayuki Oikawa, Katsuhiko Anbai, Nobuhiro Takahashi, Teruyuki Hayashi
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Publication number: 20060174835Abstract: A vacuum processing system includes a process chamber configured to accommodate a target object and perform a process thereon under a vacuum environment. The process chamber is provided with an exhaust system and a gas supply system. An ion generator configured to generate minus ions is disposed in a space outside the process chamber. The space is arranged to selectively communicate with the interior of the process chamber. A negative charge applicator is configured to form a negatively charged state of the target object within the process chamber.Type: ApplicationFiled: February 3, 2006Publication date: August 10, 2006Inventors: Misako Saito, Teruyuki Hayashi, Takayuki Komiya
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Publication number: 20050215682Abstract: An electric wire and a cable having a coating/covering layer comprising a polyvinyl chloride family resin composition containing polyvinyl chloride family resin, and one or a plurality of types of compounds selected from calcium soap, zinc soap and hydrotalcite, and containing neither lead compound nor ?-diketone with a melting point less than 100° C. avoiding generation of AMCs (Airborne Molecular Contaminants) are provided especially as an electric wire and cable with coating/covering of polyvinyl chloride family resin composition suitable for a use within a clean room for the purpose of manufacturing semiconductors or liquid crystal devices.Type: ApplicationFiled: April 25, 2005Publication date: September 29, 2005Inventors: Kiyoshi Watanabe, Hiroyuki Ito, Misako Saito, Teruyuki Hayashi, Naoya Hirayama, Sadao Kobayashi, Yoshihide Wakayama
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Patent number: 6949621Abstract: A polymer containing in the backbone a 9-oxo-9-phosphafluorene-2,7-diyl skeleton or a combination of the skeleton with a vinylene skeleton or arylene skeleton. The polymer is utilizable as, e.g., a component of a luminescent element or electrochromic element. The polymer is obtained by subjecting a 2,7-dihalo-9-oxo-9-phosphafluorene to polycondensation with dehalogenation, or to reaction with arylenebisboronic acid and polycondensation, or to polycondensation with an olefin.Type: GrantFiled: February 27, 2002Date of Patent: September 27, 2005Assignees: Japan Science and Technology Corporation, National Institute of Advanced Industrial Science and TechnologyInventors: Yoshikazu Makioka, Masato Tanaka, Teruyuki Hayashi
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Publication number: 20050143597Abstract: The present invention relates to a process which comprises efficiently proceeding a hydration reaction of an alkyne in aspects of turnover numbers of a catalyst, yield and speed to thereby industrially and advantageously produce the corresponding carbonyl compound. The present invention provides a process for producing a carbonyl compound, which comprises reacting an alkyne compound with water in the presence of a gold catalyst which is an organogold complex compound and acid in an organic solvent.Type: ApplicationFiled: March 6, 2003Publication date: June 30, 2005Inventors: Eiichiro Mizushima, Teruyuki Hayashi, Kazuhiko Sato, Masato Tanaka
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Patent number: 6903264Abstract: An electric wire with coating of polyvinyl chloride family resin composition is characterized by having a coating layer including polyvinyl chloride family composition obtained from adding more than one of any calcium soap, zinc soap and hydrotalcite to resin including polyvinyl chloride resin as a main constituent, and further adding thereto plasticizer so as to obtain a heat-stable vinyl chloride composition, and further adding thereto as stabilization auxiliaries high-melting-point ?-diketone compound having a melting point more than 100° C. out of ?-diketone compounds expressed by a general formula of R.CO.CH2.CO.R?.Type: GrantFiled: May 23, 2002Date of Patent: June 7, 2005Assignees: Tokyo Electron Limited, Taisei Corporation, Hitachi Cable, Ltd.Inventors: Kiyoshi Watanabe, Hiroyuki Ito, Misako Saito, Teruyuki Hayashi, Naoya Hirayama, Sadao Kobayashi, Yoshihide Wakayama
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Publication number: 20050107599Abstract: The invention provides a process by which rare earth metal ions can be efficiently extracted by easy operation, and effective extracting reagents for the process. Specifically, phosphonamides represented by the general formula [1]; a process for producing the same; reagents for extracting rare earth metal ions, containing the phosphonamides; and a process for extraction of rare earth metal ions with the phosphonamides: [1] wherein R1 is alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, aryl, aralkyl, or a heterocyclic group, with the proviso that each group may be substituted; R2 is hydrogen, alkyl, cycloalkyl, alkenyl, cycloalkenyl, aryl, aralkyl, or a heterocyclic group, with the proviso that each group may be substituted; R3 is hydrogen, alkyl, cycloalkyl, alkenyl, cycloalkenyl, aryl, aralkyl, or a heterocyclic group, with the proviso that each group may be substituted, or the two R3s may be united to form alkylene, cycloalkylene, or arylene.Type: ApplicationFiled: March 3, 2003Publication date: May 19, 2005Inventors: Yoshikazu Makioka, Teruyuki Hayashi, Masato Tanaka, Li-Biao Han
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Publication number: 20050087136Abstract: In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.Type: ApplicationFiled: October 7, 2004Publication date: April 28, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Tsuyoshi Moriya, Hiroshi Nagaike, Teruyuki Hayashi, Kaoru Fujihara
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Publication number: 20040219793Abstract: A thermal treatment apparatus 1 includes a reaction tube 2 for containing wafers 10 contaminated with organic substances having a heater 12 capable of heating the reaction tube; a first gas supply pipe 13 for carrying oxygen gas into the reaction tube 2; and a second gas supply pipe 14 for carrying hydrogen gas into the reaction tube 2. Oxygen gas and hydrogen gas are supplied through the first gas supply pipe 13 and the second gas supply pipe 14, respectively, into the reaction tube 2, and the heater 12 heats the reaction tube 2 at a temperature capable of activating oxygen gas and hydrogen gas. A combustion reaction occurs in the reaction tube 2 and thereby the organic substances adhering to the wafers 10 are oxidized, decomposed and removed.Type: ApplicationFiled: June 16, 2004Publication date: November 4, 2004Inventors: Shingo Hishiya, Yoshikazu Furusawa, Teruyuki Hayashi, Misako Saito, Kota Umezawa, Syoichi Sato
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Patent number: 6787241Abstract: A film obtained by heating a coating of a resin composition at a temperature lower than 300° C. but not lower than 40° C. in air or in an inert atmosphere. The resin composition includes a hydrosilylated polymer obtained by reacting at least one hydridosilsesquioxane compound of the following formula (1): (HSiO3/2)n (1) wherein n is an integer of 4-1000, with at least one compound of the following formula (2) R1—C≡C—R2 (2) wherein R1 represents a hydrogen atom, a monovalent organic group or a monovalent organosilicon group and R2 represents a hydrogen atom or a group of the formula: —(R′)q—C≡C—R where R′ represents a divalent organic group or a divalent organometallic group, R represents a monovalent organic group or a monovalent organosilicon group and q is 0 or 1 with the proviso that when R1 is a hydrogen atom R2 is a hydrogen atom.Type: GrantFiled: March 14, 2002Date of Patent: September 7, 2004Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Toshiaki Kobayashi, Teruyuki Hayashi, Masato Tanaka, Kouichi Yamaguchi
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Patent number: 6774200Abstract: A molding obtained by heating a hydrosilylated polymer at a temperature higher than the softening point or melting point thereof. The hydrosilylated polymer is obtained by reacting at least one hydridosilsesquioxane compound of the following formula (1): (HSiO3/2)n (1) wherein n is an integer of 4-1000, with at least one divinylsiloxane compound of the following formula (2): CH2═CH—SiR2—O—(SiR2.O)q—(SiR′2.O)q′—SiR2—CH═CH2 (2) wherein R and R′ are independently selected from alkyl groups, substituted alkyl groups, aryl groups and substituted aryl groups, and q and q′ are each an integer of 0 or more.Type: GrantFiled: February 28, 2002Date of Patent: August 10, 2004Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Toshiaki Kobayashi, Teruyuki Hayashi, Masato Tanaka
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Publication number: 20040149482Abstract: An electric wire and a cable having a coating/covering layer comprising a polyvinyl chloride family resin composition containing polyvinyl chloride family resin, and one or a plurality of types of compounds selected from calcium soap, zinc soap and hydrotalcite, and containing neither lead compound nor &bgr;-diketone with a melting point less than 100° C. avoiding generation of AMCs (Airborne Molecular Contaminants) are provided especially as an electric wire and cable with coating/covering of polyvinyl chloride family resin composition suitable for a use within a clean room for the purpose of manufacturing semiconductors or liquid crystal devices.Type: ApplicationFiled: November 25, 2003Publication date: August 5, 2004Inventors: Kiyoshi Watanabe, Hiroyuki Ito, Misako Saito, Teruyuki Hayashi, Naoya Hirayama, Sadao Kobayashi, Yoshihide Wakayama
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Patent number: 6753401Abstract: A process for the production of a silicon-containing polymer having a main chain of oxygen atoms, organic groups and Si—H and a process for the production of a silicon-containing polymer having a main chain of oxygen atoms, organic groups and disubstituted silicon atoms are disclosed. The silicon-containing polymer may be produced by dehydrogenative polymerization of quinone and/or diol with trihydrosilane or dihydrosilane in the presence of a palladium-containing catalyst.Type: GrantFiled: August 6, 2002Date of Patent: June 22, 2004Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Poreddy Narsi Reddy, Teruyuki Hayashi, Masato Tanaka