Abstract: A polymer containing in the backbone a 9-oxo-9-phosphafluorene-2,7-diyl skeleton or a combination of the skeleton with a vinylene skeleton or arylene skeleton. The polymer is utilizable as, e.g., a component of a luminescent element or electrochromic element.

Abstract: It is here intended to provide a modified silicone compound having excellent heat-resistant properties and a process of producing the same, and there is disclosed a modified silicone compound having an Si—H bond and an unsaturated bond, represented by the general formula (1): 1

Abstract: A chemical filter unit 10 is made of a chemical filter 12 and a filter life detection sensor 1. The filter life detection sensor 1 is provided with an adsorption state detection sensor 3 and a reference sensor 4 to which a flow of air is blocked. The sensors 3 and 4 are made of the same filter material as the chemical filter 12 with a pair of electrodes sandwiching the filter material. An oscillation circuit, in which the sensors 3 and 4 constitute a part of the oscillating conditions, detects changes in impedance of the sensors 3 and 4 based on the changes in oscillation frequencies. A measurement of the adsorption state detection sensor 3 is corrected with a measurement of the reference sensor 4 in order to remove effects of temperature and humidity, obtain a measurement corresponding to the amount of adsorption of chemical substances, and decide on the timing of replacing the chemical filter based on the corrected measurement.

Abstract: A film obtained by heating a coating of a resin composition at a temperature lower than 300° C. but not lower than 40° C. in air or in an inert atmosphere.

Abstract: Quartz member such as a quartz tube for semiconductor manufacturing equipment capable of heat treating a substrate to be treated without causing contamination, a manufacturing method of such quartz member, thermal treatment equipment furnished with such quartz member, and an analysis method of metal in quartz member are provided. A quartz specimen is immersed in hydrofluoric acid to expose a layer to be analyzed located at a prescribed depth. On an exposed surface, a decomposition liquid such as hydrofluoric acid or nitric acid is dripped to decompose only an extremely thin layer to be analyzed, followed by recovering of the decomposition liquid. The decomposition liquid is quantitatively analyzed by use of atomic absorption spectroscopy (AAS) or the like to measure an amount of metal contained in the decomposition liquid. From a difference of thicknesses before and after the decomposition and an area of dripped decomposition liquid, a volume of a decomposed layer to be analyzed is obtained.

Abstract: A molding obtained by heating a hydrosilylated polymer at a temperature higher than the softening point or melting point thereof.

Abstract: A chemical filter unit 10 is made of a chemical filter 12 and a filter life detection sensor 1. The filter life detection sensor 1 is provided with an adsorption state detection sensor 3 and a reference sensor 4 to which a flow of air is blocked. The sensors 3 and 4 are made of the same filter material as the chemical filter 12 with a pair of electrodes sandwiching the filter material. An oscillation circuit, in which the sensors 3 and 4 constitute a part of the oscillating conditions, detects changes in impedance of the sensors 3 and 4 based on the changes in oscillation frequencies. A measurement of the adsorption state detection sensor 3 is corrected with a measurement of the reference sensor 4 in order to remove effects of temperature and humidity, obtain a measurement corresponding to the amount of adsorption of chemical substances, and decide on the timing of replacing the chemical filter based on the corrected measurement.

Abstract: A substrate processing method of processing a surface of a substrate in manufacture of a semiconductor device, characterized by comprising a surface processing step for making a substance having an adsorption heat higher than that of an organic matter whose adsorption on the surface of the substrate, which has been cleaned, is undesirable, adsorbed on the surface of the substrate, and a film formation step for forming a thin film on the surface of the substrate which was processed in the above step.

Abstract: A wafer boat that supports a plurality of semiconductor wafers at a predetermined pitch, which are to be processed by a vertical thermal processing furnace, comprises a plurality of support columns; wafer support grooves formed in the support columns for supporting the peripheral edges of the wafers; and a film thickness equalization plate that is substantially the same size as the wafers, or is larger than the wafers, and is provided in wafer support grooves that are adjacent to one another in the vertical direction. This configuration ensures the same type of film is formed on the surface facing the surface of the wafer, achieving uniformity of the thus-formed film thickness.

Abstract: A film thickness measuring apparatus is provided with a housing which is made up of a base plate and outer cases, and which substantially shuts off the internal region thereof from the outside air, an introduction stage on which a cassette C is mounted, the cassette containing a plurality of substrates which have thin films formed thereon, a measurement stage which is arranged inside the housing and on which the substrate is placed for measuring the film thickness of the thin film, and a conveyance mechanism, arranged inside the housing, for moving the substrates between the inside of the cassette and the measurement stage. A film thickness measuring mechanism is arranged inside the housing. The film thickness measuring mechanism comprises a light emitting mechanism and a detector. The light emitting mechanism includes a laser light source for emitting a laser beam to the thin film on a wafer placed on the measurement stage. The detector detects light reflected from the thin film.

Abstract: An organosilicon compound having a Si--C--C--Si bond, a C.dbd.C--Si bond and/or a CH--CH--Si bond is prepared by reacting an olefin or a substituted olefin with a disilane in the presence of a platinum-containing catalyst. The resulting compound can be further treated with an alkyl lithium, an aryl lithium or a Grignard reagent.

Abstract: An improved hydroformylation process for preparing aldehydes by reacting olefins with synthesis gas (H.sub.2 and CO) under heating and pressure is disclosed. The hydroformylation is carried out in the presence of a platinum catalyst, and assistant composed of a halide of a metal of the group IVb of the Periodic Table and a reaction promotor composed of a specific bidentate ligand of the formula R.sub.2 X-Z-Y-Z-X-R'.sub.2. In this reaction, the platinum catalyst exerts a high activity, and an aldehyde mixture containing a linear isomer at a very high ratio of content is obtained as a product.

Abstract: An improved hydroformylation process for preparing aldehydes by reacting olefins with synthesis gas (H.sub.2 and CO) under heating and pressure is disclosed. The hydroformylation is carried out in the presence of a platinum catalyst, and assitant composed of a halide of a metal of the group IVb of the Periodic Table and a reaction promotor composed of a specific bidentate ligand of the formula R.sub.2 X--Z--Y--Z--X--R'.sub.2. In this reaction, the platinum catalyst exerts a high activity, and an aldehyde mixture containing a linear isomer at a very high ratio of content is obtained as a product.