Abstract: A quantum effect device includes a first layer having a plurality of charge confinement regions, a second layer opposing the first layer and separated from the first layer, the second layer having charges at a high concentration and consisting of a metal layer or a semiconductor layer, and a third layer consisting of an insulating layer or a semiconductor layer having a large band gap between the first layer and the second layer.

Abstract: An electronic device which includes, a couple of first conduction regions which are capable of confining carriers, a second conduction region having a higher energy level than those of the first conduction regions, and a first electrode for impressing a voltage on the first conduction regions, wherein when a voltage is impressed via the first electrode between the couple of first conduction regions, carriers are caused to move due to a tunneling effect from one of the first conduction regions via the second conduction region to the other of the first conduction regions, and when the voltage impressed between the couple of first conduction regions is removed, carriers are confined mainly in the one of the first conduction regions.