Abstract: Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.

Abstract: A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

Abstract: A coating composition for a lubricating coating film includes: (A) a phenolic resin (B) an epoxy resin having an epoxy equivalent weight of 600 to 4000; and (C) at least one type of solid lubricant. The epoxy equivalent weight is generally defined by the number average molecular weight per the number of epoxy groups in a single molecule. The coating composition has a weight ratio of component (A) to the total weight of component (A) and component (B) of at least 50 weight %. A lubricating coating film, formed from the coating composition, has a high level of flexibility on surfaces of various base materials.

Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region

Abstract: A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer 11 in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer 11, and a longitudinal transistor Tr1 in which a gate electrode 21 is formed to be embedded in the semiconductor layer 11 from a surface 15 of the semiconductor layer 11. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion 21A of the gate electrode 21 of the longitudinal transistor Tr1 embedded in the semiconductor substrate 11 and is connected to a channel formed by the longitudinal transistor Tr1.

Abstract: The present invention relates to a method for assaying soluble GPC3 protein in a test sample, comprising using two different antibodies binding to different epitopes present in the N-terminal region of GPC3 protein.

Abstract: Disclosed herein is an imaging device including: a plurality of pixels disposed to form a matrix having pixel rows, the pixels including a pixel electrode formed on a silicon substrate for one of the pixels by being separated away from another pixel electrodes formed for one of the other pixels, a photoelectric conversion film formed on the pixel electrode, and an opposite electrode formed on the photoelectric conversion film; and a driving section configured to apply an electric potential to the photoelectric conversion film on each of the pixel rows at least having read timings different from each other with a predetermined timing outside an exposure period of the pixels in a direction opposite to that of an electric potential applied to the photoelectric conversion film during the exposure period of the pixels.

Abstract: To provide a method for separating a vesicle having a lipid bilayer membrane, which has excellent efficiency of removing impurities and is unsuch asly to cause disruption of the vesicle having a lipid bilayer membrane. A method for separating the vesicle having the lipid bilayer membrane including: a complex forming step for forming a complex of the vesicle and the solid phase carrier by bringing a biological sample including a vesicle having a lipid bilayer membrane into contact with a solid phase carrier to which a ligand for recognizing a surface antigen present on a surface of the vesicle and is bound, a washing step for washing the complex, wherein at least any of the complex forming step and the washing step is performed in the presence of a nonionic surfactant.

Abstract: Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.

Abstract: A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.

Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

Abstract: A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.

Abstract: A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.

Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region