Abstract: A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.

Abstract: A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.

Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first (2PA) and second (2PB) phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit (52, 53b, 53c) arranged at an upper side of a semiconductor substrate (12) and a second photoelectric conversion unit (42, 43) arranged within the semiconductor substrate. The first photoelectric conversion film (52) may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

Abstract: Provided is a dynamic light scattering type particle size distribution measuring apparatus 100 capable of accurately measure the particle sizes of a sample obtained from slurry or the like. The dynamic light scattering type particle size distribution measuring apparatus 100 is configured to include: a filter member 6 that is interposed between any adjacent two of a light source 4, a cell 2, and a photodetector 5 and attenuates light passing therethrough; and an information processing device 8 that measures a particle size distribution multiple times with time and combines particle size distributions obtained at respective times of measurement to thereby calculate the particle size distribution of the whole of portions of the sample introduced at the respective times of measurement. In addition, the filter member 6 is also configured to be changeable to one having a different attenuation level at every time of measurement.

Abstract: An aqueous coating agent composition includes (A) a curable resin in the form of an aqueous emulsion, (B) a surfactant, (C) solid particles, (D) one or more nitrogen-containing heterocyclic compounds, and (E) water. In various embodiments, component (C) includes a solid lubricant, and for reasons of environmental regulations, component (D) includes 1,3-dimethyl-2-imidazolidinone.

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer 11 in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer 11, and a longitudinal transistor Tr1 in which a gate electrode 21 is formed to be embedded in the semiconductor layer 11 from a surface 15 of the semiconductor layer 11. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion 21A of the gate electrode 21 of the longitudinal transistor Tr1 embedded in the semiconductor substrate 11 and is connected to a channel formed by the longitudinal transistor Tr1.

Abstract: A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region

Abstract: In an electrical discharge machine that applies a voltage between an electrode and a workpiece to generate electrical discharge, an electrode holder holds the electrode. An ultrasonic motor has a fingertip that comes into contact with electrode holder, and moves electrode holder in a driving direction by moving the fingertip in an annular manner at an ultrasonic-range frequency. A roller bearing guides the movement of the electrode holder in the driving direction. A control circuit controls a position of the electrode in the driving direction by driving the ultrasonic motor, and moves the electrode holder based on an abnormality occurring in resistance against the movement of the electrode holder in the driving direction such that the electrode holder is moved by a movement distance equivalent to when the largest roller element among a plurality of roller elements of the roller bearing rolls and rotates once without sliding or longer.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

Abstract: A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer.

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer 11 in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer 11, and a longitudinal transistor Tr1 in which a gate electrode 21 is formed to be embedded in the semiconductor layer 11 from a surface 15 of the semiconductor layer 11. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion 21A of the gate electrode 21 of the longitudinal transistor Tr1 embedded in the semiconductor substrate 11 and is connected to a channel formed by the longitudinal transistor Tr1.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

Abstract: Provided is a dynamic light scattering type particle size distribution measuring apparatus 100 capable of accurately measure the particle sizes of a sample obtained from slurry or the like. The dynamic light scattering type particle size distribution measuring apparatus 100 is configured to include: a filter member 6 that is interposed between any adjacent two of a light source 4, a cell 2, and a photodetector 5 and attenuates light passing therethrough; and an information processing device 8 that measures a particle size distribution multiple times with time and combines particle size distributions obtained at respective times of measurement to thereby calculate the particle size distribution of the whole of portions of the sample introduced at the respective times of measurement. In addition, the filter member 6 is also configured to be changeable to one having a different attenuation level at every time of measurement.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: The present invention is a sample analyzer 100 that makes it possible to accurately analyze a sample even when the sample is such as one in a state where particles are cross-linked, or one containing foreign bodies and that calculates an autocorrelation function from a detection signal obtained by irradiating a sample with inspection light L1, and from the autocorrelation function, analyzes the sample. In addition, the sample analyzer 100 includes: an autocorrelation function determination part 53 that determines whether or not the displacement amount of an autocorrelation function serving as a comparison target from an autocorrelation function serving as a reference is within a predetermined range; and a sample analysis part 54 that analyzes the sample with use of an autocorrelation function of which the displacement amount is determined by the autocorrelation function determination part 53 to be within the predetermined range.

Abstract: The present invention is made focusing on the viscoelasticity of a sample, which is completely different from a conventional idea, and provides an optical analysis cell 100 that in order to easily make the thickness of the sample X uniform as well as making a pair of light transmitting plates 10 parallel to each other without the use of any spacer, includes the pair of light transmitting plates 10 that sandwich and hold the sample X having predetermined viscoelasticity between mutually opposed inward surfaces 10a. In addition, the optical analysis cell 100 further includes a distance fixing member 20 having a pair of opposed surfaces 21a and 22a provided separately from each other by a predetermined distance.