Abstract: The present invention is made focusing on the viscoelasticity of a sample, which is completely different from a conventional idea, and provides an optical analysis cell 100 that in order to easily make the thickness of the sample X uniform as well as making a pair of light transmitting plates 10 parallel to each other without the use of any spacer, includes the pair of light transmitting plates 10 that sandwich and hold the sample X having predetermined viscoelasticity between mutually opposed inward surfaces 10a. In addition, the optical analysis cell 100 further includes a distance fixing member 20 having a pair of opposed surfaces 21a and 22a provided separately from each other by a predetermined distance.

Abstract: Systems, apparatus, and methods for interfacing device management software and printing devices are provided. A computing device with device management software can send a discovery message requesting primary identification information to a printing device. The primary identification information can include a model name and a firmware version of the printing device. The computing device can receive the primary identification information from the printing device. The computing device can send a request message for model-dependent information based on the primary identification information to a server device. The computing device can receive a response to the request message from the server device that includes the model-dependent information. The computing device can generate a user interface (UI) display based on the model-dependent information in the response to the request message.

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer 11 in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer 11, and a longitudinal transistor Tr1 in which a gate electrode 21 is formed to be embedded in the semiconductor layer 11 from a surface 15 of the semiconductor layer 11. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion 21A of the gate electrode 21 of the longitudinal transistor Tr1 embedded in the semiconductor substrate 11 and is connected to a channel formed by the longitudinal transistor Tr1.

Abstract: A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

Abstract: A solid-state imaging device including: (a) a semiconductor layer with oppositely facing first and second sides; (b) first and second photoelectric converters between the first and second sides of the semiconductor layer, the first photoelectric converter being between the first side and the second photoelectric converter; and (c) a longitudinal transistor with a gate electrode embedded in the semiconductor layer at the second side, the gate electrode extending to the first photoelectric converter. The first photoelectric converter and the longitudinal transistor overlap.

Abstract: An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode.

Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first (2PA) and second (2PB) phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit (52, 53b, 53c) arranged at an upper side of a semiconductor substrate (12) and a second photoelectric conversion unit (42, 43) arranged within the semiconductor substrate. The first photoelectric conversion film (52) may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

Abstract: A coating composition for lubrication film comprises: (A) a (meth)acrylic acid compound, the (meth)acrylate equivalent weight of which is less than or equal to 100; (B) a (meth)acrylic acid compound, the (meth)acrylate equivalent weight of which is in the range of 120 to 300; (C) a thermosetting resin and/or high energy beam-curable resin; and (D) at least one type of solid lubricant. The coating composition is capable of forming a resin film having high adhesion to the surfaces of various types of substrates by heating and/or high energy beam irradiation.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: A semiconductor device includes, in order on a substrate, an organic semiconductor layer, an inorganic film, and a protective film. The inorganic film and the protective film each have a peripheral edge portion that is formed in an outer region compared to a peripheral edge portion of the organic semiconductor layer.

Abstract: A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer.

Abstract: A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer.

Abstract: A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

Abstract: A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.

Abstract: A coating composition for lubrication film is disclosed. The coating composition comprises (A) a high energy beam-curable resin, (B) silicone elastomer fine particles, and (C) a gum-like polysiloxane. The coating composition is capable of forming a lubrication film that suppresses the occurrence of stick-slip phenomenon, has good feel, adheres to a substrate, and has excellent followability (i.e. ability to follow the elastic transformation) to conform to deformation of the substrate.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: In an electrical discharge machine that applies a voltage between an electrode and a workpiece to generate electrical discharge, an electrode holder holds the electrode. An ultrasonic motor has a fingertip that comes into contact with electrode holder, and moves electrode holder in a driving direction by moving the fingertip in an annular manner at an ultrasonic-range frequency. A roller bearing guides the movement of the electrode holder in the driving direction. A control circuit controls a position of the electrode in the driving direction by driving the ultrasonic motor, and moves the electrode holder based on an abnormality occurring in resistance against the movement of the electrode holder in the driving direction such that the electrode holder is moved by a movement distance equivalent to when the largest roller element among a plurality of roller elements of the roller bearing rolls and rotates once without sliding or longer.