Patents by Inventor Tetsuo Fujii

Tetsuo Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200212258
    Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
    Type: Application
    Filed: September 5, 2019
    Publication date: July 2, 2020
    Inventors: Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
  • Publication number: 20200161092
    Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.
    Type: Application
    Filed: January 22, 2020
    Publication date: May 21, 2020
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
  • Publication number: 20200094185
    Abstract: A heat exchange flow path portion is formed by alternately winding two spirally-shaped first and second heat transfer walls, with a predetermined gap interposed therebetween in the radial direction of the flow path pipe, around the outer periphery of a cylindrical flow path pipe, in which a cooling heat source is disposed in a main heat transfer flow path inside thereof ?n inlet flow path and an outlet flow path for introducing compressed air into the flow path pipe and discharging compressed air from the flow path pipe are alternately formed, in the radial direction, from the gap between the heat transfer walls. Heat exchange is performed between compressed air that flows in the flow path and compressed air that flows in the flow path.
    Type: Application
    Filed: May 30, 2018
    Publication date: March 26, 2020
    Applicant: SMC CORPORATION
    Inventors: Tomoyuki IWATA, Tetsuo SAKAGUCHI, Kunihide FUJII, Shunsuke UCHIDA
  • Patent number: 10600619
    Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.
    Type: Grant
    Filed: April 6, 2016
    Date of Patent: March 24, 2020
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Yoshiharu Inoue, Tetsuo Ono, Michikazu Morimoto, Masaki Fujii, Masakazu Miyaji
  • Patent number: 10446714
    Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: October 15, 2019
    Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
  • Patent number: 10412246
    Abstract: An image-reading unit includes an original document conveyor that includes a first original document tray to hold an original document to be read, a first original document feeding port to feed the original document placed on the first original document tray, and an original document conveying path to convey the original document from the first original document feeding port to an original document discharging port. The original document conveyor further includes an openable second original document tray attached near an intermediate portion of the original document conveying path to hold an original document when opened, and a second original document feeding port to feed the original document on the second original document tray. The image-reading unit further includes an image reader to read an image of the original document being conveyed along the original document conveying path.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: September 10, 2019
    Assignee: Ricoh Company, Ltd.
    Inventors: Takuji Kawai, Yasunobu Youda, Yohei Osanai, Tatsuaki Nagano, Satoshi Narai, Toshiyuki Horikawa, Daisuke Imaki, Takayuki Andoh, Susumu Miyazaki, Tetsuo Inui, Yuki Fujii, Koichi Ono, Takeshi Shikama, Shingo Shiramura, Hideo Tanaka
  • Patent number: 10342500
    Abstract: In a case where helical scanning, etc., is performed in an X-ray CT apparatus, upsampled projection data that more approximates to an observed value is obtained. There is provided an X-ray CT apparatus that improves spatial resolution of an overall effective field of view without reducing rotation speed, in an FFS method of acquiring projection data through moving of an X-ray focus position to a plurality of positions. The X-ray CT apparatus: converts projection data acquired through helical scanning into projection data of normal scanning performed by one rotation; generates a virtual-counter-data space in which virtual counter data are acquired on substantially coincident X-ray transmission path in the converted projection data; performs upsampling in a view direction; and similarly upsamples FFS projection data in the view direction for focus-shifted projection data obtained by performing the helical scanning while causing the X-ray focus position to shift (virtual counter data space generation).
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: July 9, 2019
    Assignee: HITACHI, LTD.
    Inventors: Hideaki Fujii, Taiga Goto, Tetsuo Nakazawa
  • Patent number: 9515067
    Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.
    Type: Grant
    Filed: October 14, 2014
    Date of Patent: December 6, 2016
    Assignee: DENSO CORPORATION
    Inventors: Hirotaka Saikaku, Tsuyoshi Yamamoto, Shoji Mizuno, Masakiyo Sumitomo, Tetsuo Fujii, Jun Sakakibara, Hitoshi Yamaguchi, Yoshiyuki Hattori, Rie Taguchi, Makoto Kuwahara
  • Patent number: 9366534
    Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: June 14, 2016
    Assignees: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Tameharu Ohta, Tetsuo Fujii, Masanobu Azukawa, Takeshi Ito, Itaru Ishii
  • Patent number: 9341513
    Abstract: To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: May 17, 2016
    Assignee: ROHM CO., LTD.
    Inventors: Shunsuke Akasaka, Tetsuo Fujii, Koki Sakamoto
  • Patent number: 9029993
    Abstract: A semiconductor device includes a lead frame, a semiconductor chip, a substrate, a plurality of chip parts, a plurality of wires, and a resin member. The lead frame includes a chip mounted section and a plurality of lead sections. The semiconductor chip is mounted on the chip mounted section. The substrate is mounted on the chip mounted section. The chip parts are mounted on the substrate. Each of the chip parts has a first end portion and a second end portion in one direction, and each of the chip parts has a first electrode at the first end portion and a second electrode at the second end portion. Each of the wires couples the second electrode of one of the chip parts and one of the lead sections. The resin member covers the lead frame, the semiconductor chip, the substrate, the chip parts, and the wires.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: May 12, 2015
    Assignee: DENSO CORPORATION
    Inventors: Masao Yamada, Tetsuo Fujii
  • Patent number: 8975645
    Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.
    Type: Grant
    Filed: November 13, 2013
    Date of Patent: March 10, 2015
    Assignee: Rohm Co., Ltd.
    Inventors: Ken Nakahara, Shunsuke Akasaka, Koki Sakamoto, Tetsuo Fujii, Shunsuke Furuse, Soichiro Arimura
  • Publication number: 20150041850
    Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.
    Type: Application
    Filed: October 14, 2014
    Publication date: February 12, 2015
    Inventors: Hirotaka SAIKAKU, Tsuyoshi YAMAMOTO, Shoji MIZUNO, Masakiyo SUMITOMO, Tetsuo FUJII, Jun SAKAKIBARA, Hitoshi YAMAGUCHI, Yoshiyuki HATTORI, Rie TAGUCHI, Makoto KUWAHARA
  • Patent number: 8941229
    Abstract: A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to the predetermined portion of the surface layer of the base substrate. The leading electrode has a first end connected to one of the plurality of base semiconductor regions of the base substrate and extends through the cap substrate such that a second end of the leading electrode is located adjacent to a surface of the cap substrate for allowing an electrical connection with an external part, the surface being opposite to a bonding surface at which the base substrate and the cap substrate are bonded. The leading electrode defines a groove between an outer surface thereof and the cap substrate.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: January 27, 2015
    Assignee: DENSO CORPORATION
    Inventors: Masaya Tanaka, Tetsuo Fujii
  • Patent number: 8890252
    Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.
    Type: Grant
    Filed: July 26, 2011
    Date of Patent: November 18, 2014
    Assignee: DENSO CORPORATION
    Inventors: Hirotaka Saikaku, Tsuyoshi Yamamoto, Shoji Mizuno, Masakiyo Sumitomo, Tetsuo Fujii, Jun Sakakibara, Hitoshi Yamaguchi, Yoshiyuki Hattori, Rie Taguchi, Makoto Kuwahara
  • Publication number: 20140252396
    Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
    Type: Application
    Filed: May 19, 2014
    Publication date: September 11, 2014
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
  • Patent number: 8829627
    Abstract: A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: September 9, 2014
    Assignee: DENSO CORPORATION
    Inventors: Tetsuo Fujii, Keisuke Gotoh, Kenichi Ao
  • Patent number: 8822263
    Abstract: It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: September 2, 2014
    Assignees: National University Corporation Tokyo University of Agriculture and Technology, Rohm Co., Ltd., Tokyo Electron Limited
    Inventors: Akinori Koukitu, Yoshinao Kumagai, Tetsuo Fujii, Naoki Yoshii
  • Patent number: D867208
    Type: Grant
    Filed: October 9, 2017
    Date of Patent: November 19, 2019
    Assignees: Hitachi, Ltd., Central Japan Railway Company, A & F Corporation
    Inventors: Yukinobu Abe, Tohru Watanabe, Kiyoshi Morita, Takashi Furukawa, Yuuji Ueno, Yasuhide Ueda, Hajime Ito, Yuichi Ahiko, Hiroki Shimoyama, Tadashi Fujii, Hideto Sanui, Kyohei Suzuki, Tetsuo Fukuda, Ichiro Fukuda
  • Patent number: D884557
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: May 19, 2020
    Assignees: Hitachi, Ltd., Central Japan Railway Company, A & F Corporation
    Inventors: Yukinobu Abe, Tohru Watanabe, Kiyoshi Morita, Takashi Furukawa, Yuuji Ueno, Hajime Ito, Yuichi Ahiko, Hiroki Shimoyama, Tadashi Fujii, Eiji Sato, Kyohei Suzuki, Tetsuo Fukuda, Ichiro Fukuda