Patents by Inventor Tetsuo Fujii
Tetsuo Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8815701Abstract: A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.Type: GrantFiled: July 11, 2012Date of Patent: August 26, 2014Assignee: Denso CorporationInventors: Masakiyo Sumitomo, Makoto Asai, Nozomu Akagi, Yasuhiro Kitamura, Hiroki Nakamura, Tetsuo Fujii
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Patent number: 8785231Abstract: A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.Type: GrantFiled: January 24, 2013Date of Patent: July 22, 2014Assignee: DENSO CORPORATIONInventors: Kazuhiko Sugiura, Tetsuo Fujii, Hisanori Yokura
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Patent number: 8766296Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.Type: GrantFiled: October 8, 2009Date of Patent: July 1, 2014Assignees: The Regents of the University of California, Japan Science and Technology AgencyInventors: Tetsuo Fujii, Yan Gao, Evelyn L. Hu, Shuji Nakamura
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Patent number: 8759926Abstract: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.Type: GrantFiled: February 24, 2011Date of Patent: June 24, 2014Assignee: DENSO CORPORATIONInventors: Tetsuo Fujii, Keisuke Gotoh
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Patent number: 8749019Abstract: A region-divided substrate includes: a substrate having a first surface and a second surface opposite to the first surface and having a plurality of partial regions, which are divided by a plurality of trenches, wherein each trench penetrates the substrate from the first surface to the second surface; a conductive layer having an electrical conductivity higher than the substrate and disposed on a sidewall of one of the plurality of partial regions from the first surface to the second surface; and an insulator embedded in each trench.Type: GrantFiled: March 2, 2012Date of Patent: June 10, 2014Assignee: DENSO CORPORATIONInventors: Tetsuo Fujii, Keisuke Gotoh, Masaya Tanaka
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Patent number: 8710568Abstract: A semiconductor device includes a semiconductor substrate that includes a plurality of section having different thicknesses. The sections include a first section having a first thickness and a second section having a second thickness, the second section is the thinnest section among all the sections, and the first thickness is greater than the second thickness. A plurality of isolation trenches penetrates the semiconductor substrate for defining a plurality of element-forming regions in the first section and the second section. A plurality of elements is located at respective ones of the plurality of element-forming regions. The elements include a double-sided electrode element that includes a pair of electrodes separately disposed on the first surface and the second surface, and the double-sided electrode element is located in the second section.Type: GrantFiled: October 23, 2008Date of Patent: April 29, 2014Assignee: DENSO CORPORATIONInventors: Yoshihiko Ozeki, Tetsuo Fujii, Kenji Kouno
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Publication number: 20140084437Abstract: A semiconductor device includes a lead frame, a semiconductor chip, a substrate, a plurality of chip parts, a plurality of wires, and a resin member. The lead frame includes a chip mounted section and a plurality of lead sections. The semiconductor chip is mounted on the chip mounted section. The substrate is mounted on the chip mounted section. The chip parts are mounted on the substrate. Each of the chip parts has a first end portion and a second end portion in one direction, and each of the chip parts has a first electrode at the first end portion and a second electrode at the second end portion. Each of the wires couples the second electrode of one of the chip parts and one of the lead sections. The resin member covers the lead frame, the semiconductor chip, the substrate, the chip parts, and the wires.Type: ApplicationFiled: November 27, 2013Publication date: March 27, 2014Applicant: DENSO CORPORATIONInventors: Masao YAMADA, Tetsuo FUJII
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Publication number: 20140071525Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.Type: ApplicationFiled: November 13, 2013Publication date: March 13, 2014Applicant: ROHM CO., LTD.Inventors: Ken NAKAHARA, Shunsuke AKASAKA, Koki SAKAMOTO, Tetsuo FUJII, Shunsuke FURUSE, Soichiro ARIMURA
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Publication number: 20140053648Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.Type: ApplicationFiled: October 31, 2013Publication date: February 27, 2014Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Tameharu OHTA, Tetsuo FUJII, Masanobu AZUKAWA, Takeshi ITO, Itaru ISHII
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Publication number: 20140048922Abstract: A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to the predetermined portion of the surface layer of the base substrate. The leading electrode has a first end connected to one of the plurality of base semiconductor regions of the base substrate Wand extends through the cap substrate such that a second end of the leading electrode is located adjacent to a surface of the cap substrate for allowing an electrical connection with an external part, the surface being opposite to a bonding surface at which the base substrate and the cap substrate are bonded. The leading electrode defines a groove between an outer surface thereof and the cap substrate.Type: ApplicationFiled: October 22, 2013Publication date: February 20, 2014Applicant: DENSO CORPORATIONInventors: Masaya TANAKA, Tetsuo FUJII
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Patent number: 8624367Abstract: A semiconductor device includes a lead frame, a semiconductor chip, a substrate, a plurality of chip parts, a plurality of wires, and a resin member. The lead frame includes a chip mounted section and a plurality of lead sections. The semiconductor chip is mounted on the chip mounted section. The substrate is mounted on the chip mounted section. The chip parts are mounted on the substrate. Each of the chip parts has a first end portion and a second end portion in one direction, and each of the chip parts has a first electrode at the first end portion and a second electrode at the second end portion. Each of the wires couples the second electrode of one of the chip parts and one of the lead sections. The resin member covers the lead frame, the semiconductor chip, the substrate, the chip parts, and the wires.Type: GrantFiled: October 27, 2009Date of Patent: January 7, 2014Assignee: DENSO CORPORATIONInventors: Masao Yamada, Tetsuo Fujii
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Patent number: 8610133Abstract: Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range ? and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range ? is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.Type: GrantFiled: October 14, 2011Date of Patent: December 17, 2013Assignee: Rohm Co., Ltd.Inventors: Ken Nakahara, Shunsuke Akasaka, Koki Sakamoto, Tetsuo Fujii, Shunsuke Furuse, Soichiro Arimura
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Patent number: 8604565Abstract: A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.Type: GrantFiled: April 11, 2011Date of Patent: December 10, 2013Assignee: DENSO CORPORATIONInventors: Tetsuo Fujii, Minekazu Sakai, Takumi Shibata
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Patent number: 8601871Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.Type: GrantFiled: December 12, 2012Date of Patent: December 10, 2013Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Tameharu Ohta, Tetsuo Fujii, Masanobu Azukawa, Takeshi Ito, Itaru Ishii
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Patent number: 8587168Abstract: An electric device includes: a circuit board arranged in cooling medium in a housing and having an electric element and an external coupling electrode, wherein the electric element is sealed in and mounted in a substrate, and the electric element is electrically coupled with the external coupling electrode; an external coupling terminal electrically coupled with the external coupling electrode; and a separation member for separating the external coupling terminal and a connection portion between the external coupling electrode and the external coupling terminal away from the cooling medium.Type: GrantFiled: March 11, 2011Date of Patent: November 19, 2013Assignee: DENSO CORPORATIONInventors: Masao Yamada, Satoshi Yoshimura, Tetsuo Fujii
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Patent number: 8578761Abstract: A concentration sensor device includes a sensor unit, a substrate, and a sedimentation limit unit. The sensor unit detects a concentration of a specific component contained in liquid. The substrate has a face to which the sensor unit is arranged. The sedimentation limit unit is integrally arranged with the sensor unit or arranged at an upstream side of the sensor unit in a flowing direction of the liquid. The sedimentation limit unit is configured to prevent sedimentation of a foreign object on the sensor unit. The sedimentation limit unit includes a piezoelectric element to vibrate when electricity is supplied so as to promote the foreign object to be separated from the sensor unit. The substrate has a recess recessed in a thickness direction of the substrate.Type: GrantFiled: March 25, 2009Date of Patent: November 12, 2013Assignee: DENSO CORPORATIONInventors: Kenji Fukumura, Tetsuo Yoshioka, Tetsuo Fujii, Takaaki Kawai, Hirofumi Higuchi, Teruo Oda, Yasuyuki Okuda
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Patent number: 8519493Abstract: A semiconductor device includes a physical quantity sensor with a movable electrode disposed in a third layer of a first substrate, a fixed electrode in the third layer and a loop layer. The movable electrode and the fixed electrode are insulated by a second layer of the first substrate, and a loop bump disposed between the first substrate and a second substrate and surrounding the movable portion. The loop layer in the third layer is coupled with the second substrate via the loop bump.Type: GrantFiled: November 12, 2008Date of Patent: August 27, 2013Assignee: DENSO CORPORATIONInventor: Tetsuo Fujii
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Patent number: 8497557Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.Type: GrantFiled: April 5, 2010Date of Patent: July 30, 2013Assignee: DENSO CORPORATIONInventors: Masaya Tanaka, Tetsuo Fujii, Hisanori Yokura
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Patent number: 8455973Abstract: A region divided substrate includes a substrate, a plurality of trenches, a conductive layer, and an insulating member. The substrate has a first surface and a second surface opposed to each other. The trenches penetrate the substrate from the first surface to the second surface and divide the substrate into a plurality of partial regions. The conductive layer is disposed on a sidewall of each of the trenches from a portion adjacent to the first surface to a portion adjacent to the second surface. The conductive layer has an electric conductivity higher than an electric conductivity of the substrate. The insulating member fills each of the trenches through the conductive layer.Type: GrantFiled: October 12, 2010Date of Patent: June 4, 2013Assignee: DENSO CORPORATIONInventors: Tetsuo Fujii, Masaya Tanaka, Keisuke Gotoh
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Patent number: 8441122Abstract: A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.Type: GrantFiled: August 17, 2010Date of Patent: May 14, 2013Assignee: Denso CorporationInventors: Daisuke Fukuoka, Takanori Teshima, Kuniaki Mamitsu, Ken Sakamoto, Tetsuo Fujii, Akira Tai, Kazuo Akamatsu, Masayoshi Nishihata