Abstract: A method of producing a photoelectric conversion device having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, an n-type buffer layer made of a compound semiconductor layer, and a transparent conductive layer, is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer in the reaction solution controlled to a temperature in the range from 20° C. to 45° C.; and the buffer layer is deposited on the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer subjected to the diffusion step in the reaction solution controlled to a temperature in the range from 70° C. to 95° C.

Abstract: A method of producing a photoelectric conversion device having a multilayer structure, which includes a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, a buffer layer made of a compound semiconductor layer, and a transparent conductive layer, formed on a substrate is disclosed. Prior to a buffer layer forming step of forming the buffer layer on the photoelectric conversion layer, Cd ions are diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer on the surface thereof in an aqueous solution, which is controlled to a predetermined temperature not less than 40° C. and less than 100° C., contains at least one Cd source and at least one alkaline agent and contains no S ion source, and has a Cd ion concentration of not less than 0.1 M and a pH value in the range from 9 to 13.

Abstract: In a process for producing a photoelectric conversion device comprising a bottom electrode layer, a photoelectric conversion semiconductor layer, a buffer layer, and a transparent conductive layer, which are stacked in this order on a substrate, all film forming stages ranging from a stage of forming the buffer layer to a stage of forming the transparent conductive layer are performed with a liquid phase technique. The buffer layer is formed with a chemical bath deposition technique, and the transparent conductive layer is formed with an electrolytic deposition technique.

Abstract: For production of an electrically conductive zinc oxide layered film, a substrate, at least a surface of the substrate being electrically non-conductive, is prepared. An underlayer is formed with a coating technique on the electrically non-conductive surface of the substrate, the underlayer comprising at least one kind of a plurality of fine particles containing electrically conductive zinc oxide as a principal ingredient. An electrically conductive zinc oxide thin film layer is formed with a chemical bath deposition technique on the underlayer.

Abstract: A method of manufacturing a buffer layer of a photoelectric conversion device having a stacked structure in which a lower electrode, a photoelectric conversion semiconductor layer that generates a current by absorbing light, the buffer layer, and a translucent conductive layer are stacked on a substrate, in which the buffer layer is formed by a CBD method, a pH variation of reaction solution for forming the buffer layer is controlled within 0.5 while deposition of the buffer layer by the CBD method is in progress, and the reaction solution includes a Cd or Zn metal and a sulfur source.

Abstract: A buffer layer manufacturing method, including the steps of forming a fine particle layer of ZnS, Zn(S, O), and/or Zn(S, O, OH), mixing an aqueous solution (I) which includes a component (Z), an aqueous solution (II) which includes a component (S), and an aqueous solution (III) which includes a component (C) to obtain a mixed solution and mixing an aqueous solution (IV) which includes a component (N) in the mixed solution to prepare a reaction solution in which the concentration of the component (C) is 0.001 to 0.25M, concentration of the component (N) is 0.41 to 1.0M, and the pH before the start of reaction is 9.0 to 12.0, and, using the reaction solution, forming a Zn compound layer of Zn(S, O) and/or Zn(S, O, OH) on the fine particle layer by a liquid phase method with a reaction temperature of 70 to 95° C.

Abstract: A buffer layer manufacturing method, including: a preparation step for preparing a reaction solution which includes a component (Z) of at least one kind of zinc source, a component (S) of at least one kind of sulfur source, a component (C) of at least one kind of citrate compound, a component (N) of at least one kind selected from the group consisting of ammonia and ammonium salt, and water, in which the concentration of the component (C) is 0.001 to 0.25M, the concentration of the component (N) is 0.001 to 0.40M, and the pH of the reaction solution before the start of reaction is 9.0 to 12.0; and a film forming step for forming a Zn compound layer consisting primarily of Zn(S, O) and/or Zn(S, O, OH) by a liquid phase method with a reaction temperature of 70 to 95° C.

Abstract: A semiconductor device includes a plurality of memories, a sequencer which outputs configuration information, and a memory reconfiguring circuit which reconfigures the memory area in accordance with the configuration information supplied from the sequencer. Since the memory reconfiguring circuit dynamically changes the allocation of the memories, it is possible to reconfigure the memory configuration and freely change the memory size in accordance with the purpose of use.

Abstract: Using a manufacturing method which includes a process (A) for forming a particle layer of a plurality of one or more types of particles consisting mainly of a metal oxide and/or a metal hydroxide, and a process (B) for forming, using a reaction solution which includes one or more types of metal ions, a metal oxide layer consisting mainly of an oxide of the one or more types of metal ions on the particle layer so as to cover the particle layer without any cracks by a liquid phase method under a pH condition in which at least a portion of the plurality of particles remains without being dissolved by the reaction solution, a layered film having a layered structure of the particle layer and the metal oxide layer is manufactured.

Abstract: An operation apparatus includes a sequencer controlling states of a plurality of operation devices and a configuration memory storing therein configuration information as setting information for each state in the operation device. In the operation apparatus, a path which requires a data buffer and another path which requires no such a data buffer are provided for inputting data to the operation device, a data buffer control part is provided for controlling selection from these two paths and operation of the data buffer, and contents of path selection and operation control of the data buffer carried out by the data buffer control part are set according to the configuration information.

Abstract: A cosmetic composition contains star-shaped zinc oxide particles each having a star shape, and containing zinc oxide as a main substance thereof.

Abstract: A method for producing a metal oxide structure, including: forming a layer containing metal acetate hydrate on a sapphire substrate; subjecting the layer containing the metal acetate hydrate to an insolubilization treatment; and immersing the sapphire substrate having the insolubilized layer in a reaction solution containing a metal ion and an NH4+ ion, so as to grow rod-shaped crystals each containing metal oxide as a main substance thereof.

Abstract: A reconfigurable operation apparatus consists of a plurality of operation units capable of reconfiguring themselves by using a piece of given first configuration data and of operating simultaneously with one another; RAMs; diverse processor elements required for constituting an operation apparatus; an inter-resource network interconnecting the operation units, the RAMs and the diverse processor elements, performing data transfers between resources connected thereto in a uniform transfer time independent of positions and kinds of the resources, and being reconfigurable by using a given second configuration data; and a configuration memory storing the first and the second configuration data. Configuration data is loaded from an external storage apparatus onto the configuration memory, and the first and the second configuration data are supplied to the reconfigurable processor resources in appropriate sequence and timing based on data available from a plurality of operation units.

Abstract: A method for producing star-shaped zinc oxide particles, the method including heating a solution containing tetrahydroxozincate(II) ion [Zn(OH)4]2?, and diluting the solution containing tetrahydroxozincate(II) ion [Zn(OH)4]2? with a solvent in the course of reaction so that the concentration of zinc ion (Zn2+) after the dilution is adjusted to 0.008 M or lower.

Abstract: To provide an optical resin composition containing carbonate crystals, which have oriented birefringence, have a needle- or rod-like shape, and are able to negate the birefringence without sacrificing the light transmittance of a transparent polymeric resin where the carbonate crystal exists, and a method for producing the resin composition. To achieve this provided are an optical resin composition containing a resin and carbonate crystals, wherein the carbonate crystals have a specific surface area of 4 m2/g or more, and the carbonate crystals dispersed into the resin have an average dispersion diameter of 500 nm at a maximum, and a method for producing the optical resin composition.

Abstract: It is an object of the invention to provide a pump jack pump-off control method and a pump jack control apparatus in which, even when the speed of a pump jack is reduced due to generation of a pump-off condition, the pump jack is not caused to stop due to the motor overload abnormality or the coagulated crude oil and, even when the pump-off condition is generated, the reduction of the production capacity of the pump jack can be prevented as much as possible. On detecting the pump-off condition, while the pump jack is in operation with the speed thereof being reduced, or while the pump jack is in operation at the lowest speed, according to the overload warning signal of an ac electric motor, the pump jack is switched over to its intermittent operation.

Abstract: A semiconductor device includes a configuration memory for storing configuration data, an arithmetic unit whose circuit configuration can be reconfigured in accordance with the configuration data, and a fixed value memory for storing fixed value data to be supplied to the arithmetic unit. Since the configuration data and fixed value data to be supplied to the arithmetic unit are stored in the different memories, no data area for storing the fixed value data need be set in the configuration memory. This makes it possible to supply a predetermined fixed value to the arithmetic unit by storing only information for reading out fixed value data from the fixed value memory.

Abstract: A dynamic reconfiguration supporting method that generates a driver function to cause a dynamic reconfiguration circuit to execute a program of an application described in a predetermined language, includes acquiring a configuration defining file representing a configuration of a cluster of the dynamic reconfiguration circuit in execution of the process of the application, generating an address map representing an address of a processing element (to be referred to as “PE” hereinafter) in the cluster on the basis of the configuration defining file acquired by the acquiring operation, generating a driver function that associates the function and an address of the PE which executes the function with reference to the address map, when a PE which executes a function described in the application is allocated from the PE, and creating a driver function file that stores the driver function.

Abstract: A novel composition is disclosed. The composition comprises, at least, a polymer material and inorganic fine particles having adsorbed thereto molecules having at least one adsorptive group to the inorganic fine particle and a group capable of forming a liquid crystal core. A film made of the composition is also disclosed.

Abstract: The object of the present invention is to provide a carbonate crystal, which has oriented birefringence, is needle- or rod-like, and is able to negate the birefringence without sacrificing the light transmittance of a transparent polymeric resin when it exists in the transparent resin; a manufacturing method of the carbonate crystal; and a transparent optical resin composition comprising the carbonate resin. The carbonate crystal has an aspect ratio of two or greater, the average major axis length of 400 nm or shorter, and the variation coefficient expressed in Formula (1) below is 0.40 or less: 1 r × { 1 n - 1 ? ? i = 1 n ? ( r i - r ) 2 } 1 2 Formula ? ? ( 1 ) wherein r denotes an average major axis length, n denotes the number of particles used for the measurement of the major axis length, and n denotes the major axis length of the ith particle measured.