Abstract: An edaravone suspension for human oral administration includes edaravone particles, a dispersant, and water.

Abstract: A card reader includes a pulling-out prevention member turnable between a closing position where a card moving passage is closed and an open position and preventing pulling-out of a card having been inserted into a card reader at the closing position. The pulling-out prevention member is provided with a main body member and a card abutting member which closes the card moving passage when the pulling-out prevention member is located at the closing position. A rear end of the card abutting member is capable of contacting with a front end of the card having been inserted into the card reader when the pulling-out prevention member is located at the closing position. The main body member of the pulling-out prevention member is formed of resin, and the card abutting member is formed of material having a strength higher than a strength of the resin.

Abstract: The present disclosure provides a light-emitting apparatus including an insulating layer, a light-emitting element disposed on a main surface of the insulating layer, the light-emitting element containing a light-emitting material and having a resonator structure, and a lens disposed above the light-emitting element, a photoluminescence (PL) spectrum of the light-emitting material having a first peak with a wavelength ?PL in a visible light range, wherein the resonator structure satisfies Exp. (1), |?EL??PL|<|?on??PL|??(1) where ?on is a resonance peak wavelength of an interference spectrum that reinforces light emitted in a direction perpendicular to the main surface and ?EL is a peak wavelength of electroluminescence radiated via the light extracting structure.

Abstract: A light emitting apparatus according to the present disclosure includes an organic light emitting element (100) including a reflection surface (S2), a first electrode (2), an organic layer (3) including a light emitting layer (31), a second electrode (4), and a light extraction structure (10). The light emitting layer (31) contains a first light emitting material. A wavelength included in a peak wavelength range of a PL spectrum of the first light emitting material is assumed as a first wavelength ?1. An optical distance (Lb) between the light emitting layer (31) and the reflection surface (S2) is a value with which rays of light with the first wavelength (?1), traveling in a first direction (D1) and a second direction (D2) that intersect with a normal direction of a principal surface (S1) of the substrate (1), both are intensified.

Abstract: Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

Abstract: Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

Abstract: A semiconductor device comprises an electrode on a substrate, an insulating layer covering an edge of the electrode and disposed on the substrate, and an organic layer comprising a charge transport layer on the electrode and insulating layer and a functional layer, wherein the insulating layer has a first portion forming an angle of 0° to 50° with respect to a surface parallel to a lower surface of the electrode, a second portion located closer to the substrate than the first portion and sloping at more than 50°, and a third portion located closer to the organic layer than the first portion and sloping at more than 50°, wherein a length of the third portion in a direction perpendicular to the parallel surface is larger than a thickness of the charge transport layer at a position in contact with the electrode.

Abstract: A semiconductor device according to the present disclosure is an RC-IGBT in which an IGBT region 10 and a diode region 20 are provided adjacent to each other. The diode region 20 includes a p-type anode layer 25 provided on a first principal surface side of an n?-type drift layer 1, a p-type contact layer 24 provided on the first principal surface side of the p-type anode layer 25 and at a surface layer of a semiconductor substrate on the first principal surface side and connected with an emitter electrode 6, and an n+-type cathode layer 26 provided at a surface layer of the semiconductor substrate on a second principal surface side. The p-type contact layer 24 contains aluminum as p-type impurities, and the thickness of the p-type contact layer 24 is smaller than the thickness of an n+-type source layer 13 provided in the IGBT region 10.

Abstract: There is provided a semiconductor device having a semiconductor element and a protective film that is disposed above the semiconductor element and contains silicon atoms and nitrogen atoms, wherein the protective film has an average number of nitrogen atoms bonded to one silicon atom of less than or equal to 1.35.

Abstract: A light-emitting element includes a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode. The light-emitting element includes a transmittance-increasing layer with increasing transmittance in an optical path of light emitted from the light-emitting layer.

Abstract: An organic device comprising first and second conductive line, an insulator arranged above the first and second conductive lines, a first electrode arranged above the insulator, an organic layer arranged above the first electrode, a second electrode arranged above the organic layer, a first via including a first conductor connecting the first conductive line and the first electrode, and a second via including a second conductor connecting the second conductive line and the second electrode, is provided. An upper portion of the first via is filled with the first conductor. An upper portion of the second via includes a region which is not filled with the second conductor and covered by the second conductor. An inner wall of the second conductor along the second via includes a region without the organic layer in contact with the second electrode.

Abstract: A cap configured to be detachably attached to a mouth portion of a container body having a containment space for contents and close the mouth portion, includes: a transparent or semitransparent topped tubular outer lid portion; and a topped tubular inner lid portion located in close contact with an inner side of the outer lid portion so as to be relatively non-rotatable. A retaining protrusion having an inclined surface that is inclined inward in a downward direction and extends to a lower end of the outer lid portion is provided on an inner peripheral surface of the outer lid portion. The retaining protrusion engages with a retaining depression provided on an outer peripheral surface of the inner lid portion, to suppress separation between the outer lid portion and the inner lid portion.

Abstract: A transistor and a diode are formed on a common semiconductor substrate; the semiconductor substrate has a transistor region and an outer peripheral region surrounding it; the transistor region is divided into a plurality of channel regions and a plurality of non-channel regions by a plurality of gate electrodes each having a stripe shape; each of the plurality of non-channel regions has a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fifth semiconductor layer, a first electrode, and a second electrode; the third semiconductor layer and the fifth semiconductor layer are electrically connected to the second electrode via a contact hole; and the fifth semiconductor layer is selectively provided not to be in contact with an impurity layer of a first conductivity type that is provided in the outer peripheral region and defines a boundary with a cell region.

Abstract: A light emitting apparatus including a substrate including a principal surface, a first light emitting element disposed on the principal surface, a second light emitting element disposed on the principal surface, a first lens and a second lens wherein a distance between a middle point of an emission area of the second light emitting element and an apex of the second lens is larger than a distance between a middle point of an emission area of the first light emitting element and an apex of the first lens, wherein the emission area of the second light emitting element is larger than the emission area of the first light emitting element, and wherein the lower electrode of the second light emitting element is larger than the lower electrode of the first light emitting element.

Abstract: A semiconductor apparatus include a first electrode, an insulating layer covering an end of the first electrode, a functional layer arranged on the first electrode and the insulating layer, and a second electrode arranged above the functional layer, wherein, in a cross-section passing through the insulating layer, and the first electrode, the insulating layer includes a first portion having a side surface inclining at an angle of 45° or more and 90° or less, a second portion having a side surface inclining at an angle smaller than 45°, and a third portion below the first portion, and having a side surface inclining at an angle smaller than 45°, and wherein a length of the second portion in a direction vertical to the first electrode is larger than that of the third portion.

Abstract: Alight emitting device comprising lower electrodes arranged on a substrate, an organic layer including a light emitting layer arranged to cover the lower electrodes, an upper electrode arranged to cover the organic layer, a reflective layer arranged between the substrate and the lower electrodes, and an insulating layer arranged between the reflective layer and the lower electrodes, is provided. The reflective layer is arranged to overlap the lower electrodes. The lower electrodes include a first electrode and a second electrode adjacent to each other. An upper electrode contact portion configured to electrically connect the reflective layer and the upper electrode is arranged between the first electrode and the second electrode, and the upper electrode contact portion includes a via hole in which a conductive member configured to electrically connect the reflective layer and the upper electrode is arranged.

Abstract: A light-emitting device includes a plurality of organic EL elements. Each of the organic EL elements includes a reflection electrode, a hole transport region, an electron-trapping luminescent layer, and a light extraction electrode in this order. The hole transport region has a sheet resistance of 4.0×107 ?/sq.? or more at a current of 0.1 nA/pixel, and the total thickness of the hole transport region and the electron-trapping luminescent layer is equivalent to an optical path length enabling emission from the electron-trapping luminescent layer to be enhanced.

Abstract: Electronic device includes lower electrodes, insulating layer covering end portion of each lower electrode, organic compound layer covering the insulating layer and electrode region of upper surface of each lower electrode, and upper electrode covering the organic compound layer. The electrode region of the upper surface is located on inner side of the end portion The organic compound layer includes mixed layer containing first organic material and second organic material having hole mobility lower than that of the first organic material. The insulating layer includes inclined surface inclined with respect to the upper surface of the lower electrode. Ratio of weight of the second organic material to weight of the first organic material is higher in second portion of the mixed layer on the inclined surface than in first portion of the mixed layer on the electrode region.

Abstract: An organic light emitting element includes a reflection layer, a first electrode, an organic layer including a light emitting layer, and a second electrode, arranged in this order from a side of a substrate. The reflection layer includes a first portion having a first thickness and a second portion having a second thickness smaller than the first thickness. The first electrode overlaps with the second portion, and at least part of an edge of the first electrode overlaps with the second portion in a planar view with respect to the substrate.

Abstract: A semiconductor substrate has a transistor region, a diode region, and an outer peripheral region. The transistor region is divided into a plurality of transistor unit cell regions by a plurality of gate electrodes each having a stripe shape, and the diode region is divided into a plurality of diode unit cell regions by the plurality of gate electrodes. Each of the plurality of transistor unit cell regions has a third semiconductor layer of a first conductivity type provided on a first main surface side of the semiconductor substrate, a fourth semiconductor layer of a second conductivity type selectively provided on an upper layer part of the third semiconductor layer, and a fifth semiconductor layer. The fifth semiconductor layer is provided to be in contact with an impurity layer of the first conductivity type provided in the outer peripheral region, or to enter the impurity layer.