Abstract: An organic device is provided. The device comprises a substrate and a plurality of light emitting elements formed on a first surface of the substrate. Each of the plurality of light emitting elements includes, from a side of the first surface, a first electrode, an organic layer formed on the first electrode and including a light emitting layer, and a second electrode formed on the organic layer. The organic device further comprises a third electrode formed between the first electrodes of adjacent light emitting elements of the plurality of light emitting elements, and an insulating layer covering a portion between the first electrode and the third electrode, an end portion of the first electrode, and an end portion of the third electrode. The insulating layer includes a recess between the first electrode and the third electrode.

Abstract: A semiconductor device including a first conductivity type substrate, a first conductivity type carrier store layer formed on an upper surface side of the substrate, a second conductivity type channel dope layer formed on the carrier store layer, a first conductivity type emitter layer formed on the channel dope layer, a gate electrode in contact with the emitter layer, the channel dope layer and the carrier store layer via a gate insulating film, and a second conductivity type collector layer formed on a lower surface side of the substrate, wherein the gate insulating film has a first part in contact with the emitter layer and the channel dope layer, a second part in contact with the carrier store layer, and a third part in contact with the substrate, and at least a part of the second part is thicker than the first part and the third part.

Abstract: Provided is a photoelectric conversion element including an anode, a photoelectric conversion layer that contains a first organic semiconductor, a second organic semiconductor, and a third organic semiconductor, and a cathode. As each of the first organic semiconductor, the second organic semiconductor, and the third organic semiconductor, a low-molecular weight organic semiconductor is used. The first organic semiconductor, the second organic semiconductor, and the third organic semiconductor have mass ratios that satisfy the following relationship: the first organic semiconductor?the second organic semiconductor?the third organic semiconductor. Further, when a total amount of the first organic semiconductor, the second organic semiconductor, and the third organic semiconductor is 100 mass %, a content of the second organic semiconductor is 6 mass % or more, and a content of the third organic semiconductor is 3 mass % or more.

Abstract: A game device includes a processor including hardware, the processor being configured to implement: an input process that acquires line-of-sight information about a player who wears a head-mounted display, and input information that has been input by the player using an input device; a game process that performs a first game process based on the input information, and performs a second game process based on the line-of-sight information, when a game includes a first game and a second game, the first game process being a process for the player to play the first game, and the second game process being a process for the player to play the second game; and a game result calculation process that calculates a game result achieved by the player based on a result of the first game process and a result of the second game process.

Abstract: The present disclosure provides a photoelectric conversion element including a lower electrode, a photoelectric conversion layer, and an upper electrode in this order; a voltage is applied between the lower electrode and the upper electrode; the photoelectric conversion layer contains a first organic compound and a second organic compound; the first organic compound has a lower oxidation potential than the second organic compound, and ?E represented by the following formula (A) satisfies the following formula (B); where ?E=oxidation potential of first organic compound?reduction potential of second organic compound (A) ?E?1.79[V]??(B).

Abstract: A semiconductor device that includes transistor and diode regions in one semiconductor substrate achieves favorable tolerance during recovery behaviors of diodes. A semiconductor base includes an n?-type drift layer in the IGBT and diode regions. In the IGBT region, the semiconductor base includes a p-type base layer formed on the n?-type drift layer, a p+-type diffusion layer and an n+-type emitter layer formed selectively on the p-type base layer, the diffusion layer having a higher p-type impurity concentration than the p-type base layer, and gate electrodes facing the p-type base layer via a gate insulating film. In the diode region, the semiconductor base includes a p?-type anode layer formed on the n?-type drift layer. The p+-type diffusion layer has a higher p-type impurity concentration than the p?-type anode layer, and has a smaller depth and a lower p-type impurity concentration as approaching the diode region.

Abstract: One embodiment of this invention has a first electrode, a first light emitting layer, and a second electrode, in which the first light emitting layer has a first host material and a first dopant material, a lowest triplet excitation energy of the first host material is higher than a lowest triplet excitation energy of the first dopant material, and, when a weight of the first light emitting layer is set to 100 wt %, a concentration of the first dopant material is 0.3 wt % or less.

Abstract: A display device according to an embodiment of the present invention includes first and second electroluminescent elements on a substrate. The first and second electroluminescent elements each include a lower electrode, a functional layer including a light-emitting layer, an upper electrode, and a first or second color filter. The display device includes an overlapping region where the first and second color filters overlap each other in a plan view. Light transmitted through the first color filter has a higher luminosity factor than light transmitted through the second color filter. L2>L1, wherein L2 is the distance between the light-emitting region of the second electroluminescent element and the second color filter, and L1 is the distance between the light-emitting region of the first electroluminescent element and the first color filter.

Abstract: The present invention provides a light-emitting device including a substrate, a first EL element, and a second EL element, the first EL element and the second EL element each including a lower electrode, an organic compound layer including a light-emitting layer, an upper electrode, and a color filter in this order from the substrate, and an insulating layer that covers an end portion of the lower electrode. A first color filter of the first EL element and a second color filter of the second EL element overlap each other when viewed in plan in an overlapping region, and an inclined portion closest to the first EL element among inclined portions of the insulating layer of the second EL element and the overlapping region overlap each other when viewed in plan.

Abstract: An intrusion prevention device includes a reception unit, a monitoring unit, and a determination unit. The reception unit receives, from a control target device, a notification indicating a state of the control target device. The monitoring unit receives a control command transmitted from a control device to the control target device. The determination unit determines whether to permit or block passage of the control command received by the monitoring unit in accordance with the state of the control target device received by the reception unit.

Abstract: A first metal layer is provided on a main surface side of a substrate. A second metal layer is formed on the first metal layer. A solder layer is provided on the second metal layer. An insulating member is structured so that an end of the first metal layer is partially connected to an end of the second metal layer.

Abstract: A photoelectric conversion element including an anode, a cathode, and a photoelectric conversion layer, wherein the photoelectric conversion layer contains a first organic compound and a second organic compound, and difference between oxidation potential of first organic compound and reduction potential of second organic compound is larger than 1.5 [V], and the first organic compound is any one of general formulae [1] below, a fluoranthene derivative, and a metal complex, R1 represents a hydrogen atom or a substituent, Ar1, Ar2, and Z1 represents a substituent, n1 and n2 represents an integer of 0 to 4, and X1 to X3 represents a nitrogen atom, a sulfur atom, an oxygen atom, or a carbon atom.

Abstract: The present disclosure provides a photoelectric conversion element including a lower electrode, a photoelectric conversion layer, and an upper electrode in this order, wherein the photoelectric conversion layer includes a first organic compound and a second organic compound having a lower reduction potential than that of the first organic compound, the first organic compound has an emission lifetime of 1.1 ns or more in chloroform solution, and the first organic compound is an organic compound represented by Formula [1] according to claim 1, a fluoranthene derivative, or a metal complex.

Abstract: A device uses a light-emitting material. The device includes an upper and a lower electrode, a first photoelectric conversion portion disposed between the upper electrode and the lower electrode, a second photoelectric conversion portion, a first readout circuit connected to the first photoelectric conversion portion, and a second readout circuit connected to the second photoelectric conversion portion. The second photoelectric conversion portion converts light emitted from the light-emitting material into electrical charges.

Abstract: A semiconductor device includes a switching device region including an active region having a first conductivity-type emitter region formed on an upper surface side of a first conductivity-type substrate, a second conductivity-type base region formed on an upper surface side of the substrate, a second conductivity-type collector layer formed on a lower surface side of the substrate, and a diode region having a second conductivity-type anode layer formed on the upper surface side of the substrate and a first conductivity-type cathode layer formed on the lower surface side of the substrate, wherein the cathode layer is separated from the active region when planarly viewed, and on an upper surface side of the active region, a second conductivity type high-concentration region having an impurity concentration higher than that of the anode layer is formed.

Abstract: A semiconductor device includes a semiconductor chip, a cell surface electrode portion, and a peripheral edge surface structure portion. The semiconductor chip has a cell portion and a peripheral edge portion provided around the cell portion in plan view. The cell surface electrode portion is provided on the cell portion. The peripheral edge surface structure portion is provided on the peripheral edge portion. The peripheral edge portion is made thinner than the cell portion so that a back surface of the peripheral edge portion is more concave than a back surface of the cell portion. When the thickness of the cell portion is represented by tc and the size of the step between the cell portion and the peripheral edge portion on the back surface is represented by dtb, 0%<dtb/tc?1.5% is satisfied.

Abstract: A semiconductor device includes a drift layer formed of a first conductive type semiconductor material, a MOSFET part including a p-type base layer provided on a front surface of the drift layer, a first n-type buffer layer provided on a reverse side of the drift layer, and a second n-type buffer layer provided on a reverse side of the first n-type buffer layer and having a high impurity concentration. The first n-type buffer layer has a higher impurity concentration than the drift layer and has a total amount of electrically active impurities per unit area of 1.0×1012 cm?2 or less.

Abstract: The present disclosure provides an organic compound expressed by the following General Formula 1: In General Formula 1, a partial structure Z1 represents a condensed polycyclic group that may include a nitrogen atom in a skeleton, and that includes at least one of a five-membered ring and a six-membered ring. The partial structure Z1 may include, as a substituent, a carbonyl group, a dicyanovinylidene group, a halogen atom, a cyano group, an alkyl group, an alkoxy group, an aromatic heterocyclic group, or an aryl group. R1 and R2 represent an alkyl group, aryl group, an aromatic heterocyclic group, a halogen group, or a cyano group. Ar1 represents an arylene group or a divalent aromatic heterocyclic group, and Ar2 and Ar3 represent an aryl group or an aromatic heterocyclic group. n represents an integer of 1 to 4.

Abstract: A light-emitting device includes a plurality of organic EL elements. Each of the organic EL elements includes a reflection electrode, a hole transport region, an electron-trapping luminescent layer, and a light extraction electrode in this order. The hole transport region has a sheet resistance of 4.0×107 ?/sq. or more at a current of 0.1 nA/pixel, and the total thickness of the hole transport region and the electron-trapping luminescent layer is equivalent to an optical path length enabling emission from the electron-trapping luminescent layer to be enhanced.

Abstract: An optical signal processing device with a transponder aggregator function by which theoretical loss is not increased even if the number of necessary transponders is increased. Optical signals inputted from input ports are inputted to a PLC. The PLC has SBTs. The input ports are connected to the input-end SBT, and a plane wave is outputted from an output end of the PLC to the space side at an angle different for each input port. Optical signals outputted by the PLC are changed in their optical paths on the x-z plane by a cylindrical lens (Lsp) designed to refract optical signals in the x-axis direction, and are reflected by an LCOS at different regions corresponding to the positions of the input port. The reflected optical signals are incident on the output-end SBTs on the PLC, and are outputted to output ports via demultiplex parts.