Abstract: An organic device comprising first and second conductive line, an insulator arranged above the first and second conductive lines, a first electrode arranged above the insulator, an organic layer arranged above the first electrode, a second electrode arranged above the organic layer, a first via including a first conductor connecting the first conductive line and the first electrode, and a second via including a second conductor connecting the second conductive line and the second electrode, is provided. An upper portion of the first via is filled with the first conductor. An upper portion of the second via includes a region which is not filled with the second conductor and covered by the second conductor. An inner wall of the second conductor along the second via includes a region without the organic layer in contact with the second electrode.

Abstract: An organic device comprising first and second electrodes above a main surface of a substrate, an insulator which includes a first portion arranged between the first and second electrodes and a second portion arranged to cover a peripheral portion of the first electrode and an organic layer is provided. An upper surface of the insulator which is between a vertex portion of the second portion and at least one of a third portion of the first electrode which is not covered by the insulator and the first portion includes a slope portion having angle 50° to 180° with respect to the main surface. An upper end of the slope portion is farther from the main surface than an upper surface of a charge generating layer of the organic layer, and is closer to the main surface than an upper surface of the organic layer.

Abstract: A semiconductor apparatus includes a semiconductor substrate and a second electrode. Semiconductor substrate includes a device region and a peripheral region. An n? drift region and second electrode extend from device region to peripheral region. An n buffer layer and a p collector layer are provided also in peripheral region. Peripheral region is provided with an n type region. N type region is in contact with second electrode and n buffer layer. The turn-off loss of the semiconductor apparatus is reduced.

Abstract: A semiconductor device includes an IGBT region and a diode region provided to be adjacent to each other in a semiconductor substrate further includes: a boundary trench having, in a position in which the IGBT region and the diode region are adjacent to each other in plan view, a bottom surface positioned in a drift layer to be deeper than an active trench or a dummy trench, and one side wall and another side wall that face each other; and a boundary trench gate electrode, which faces a base layer, an anode layer, and the drift layer via a boundary trench insulating film and is provided from the one side wall to the other side wall of the boundary trench across a region that faces the drift layer in the boundary trench.

Abstract: An intrusion prevention device includes a reception unit, a monitoring unit, and a determination unit. The reception unit receives, from a control target device, a notification indicating a state of the control target device. The monitoring unit receives a control command transmitted from a control device to the control target device. The determination unit determines whether to permit or block passage of the control command received by the monitoring unit in accordance with the state of the control target device received by the reception unit.

Abstract: A semiconductor device includes an IGBT as a switching element, and a diode. The IGBT includes: a p type channel doped layer formed in a surface layer part on a front side of a semiconductor substrate; a p+ type diffusion layer and an n+ type source layer individually selectively formed in a surface layer part of the p type channel doped layer; and an emitter electrode connected to the n+ type source layer and the p+ type diffusion layer. A part of the p type channel doped layer reaches a front-side surface of the semiconductor substrate and is connected to the emitter electrode. On the front-side surface of the semiconductor substrate, the p+ type diffusion layer is interposed between the p type channel doped layer and an n+ type source layer, and the p type channel doped layer and the n+ type source layer are not adjacent to each other.

Abstract: Electronic device includes lower electrodes, insulating layer covering end portion of each lower electrode, organic compound layer covering the insulating layer and electrode region of upper surface of each lower electrode, and upper electrode covering the organic compound layer. The electrode region of the upper surface is located on inner side of the end portion The organic compound layer includes mixed layer containing first organic material and second organic material having hole mobility lower than that of the first organic material. The insulating layer includes inclined surface inclined with respect to the upper surface of the lower electrode. Ratio of weight of the second organic material to weight of the first organic material is higher in second portion of the mixed layer on the inclined surface than in first portion of the mixed layer on the electrode region.

Abstract: Provided is a photoelectric conversion element including an anode, a photoelectric conversion layer that contains a first organic semiconductor, a second organic semiconductor, and a third organic semiconductor, and a cathode. As each of the first organic semiconductor, the second organic semiconductor, and the third organic semiconductor, a low-molecular weight organic semiconductor is used. The first organic semiconductor, the second organic semiconductor, and the third organic semiconductor have mass ratios that satisfy the following relationship: the first organic semiconductor?the second organic semiconductor?the third organic semiconductor. Further, when a total amount of the first organic semiconductor, the second organic semiconductor, and the third organic semiconductor is 100 mass %, a content of the second organic semiconductor is 6 mass % or more, and a content of the third organic semiconductor is 3 mass % or more.

Abstract: A semiconductor device includes a semiconductor substrate, and the semiconductor substrate is divided into an IGBT region, a diode region, and a MOSFET region. A drift layer of n?-type is provided in the semiconductor substrate. The drift layer is shared among the IGBT region, the diode region, and the MOSFET region. In the semiconductor substrate, the diode region is always disposed between the IGBT region and the MOSFET region to cause the IGBT region and the MOSFET region to be separated from each other without being adjacent to each other.

Abstract: A light-emitting device includes a plurality of organic EL elements. Each of the organic EL elements includes a reflection electrode, a hole transport region, an electron-trapping luminescent layer, and a light extraction electrode in this order. The hole transport region has a sheet resistance of 4.0×107 ?/sq.? or more at a current of 0.1 nA/pixel, and the total thickness of the hole transport region and the electron-trapping luminescent layer is equivalent to an optical path length enabling emission from the electron-trapping luminescent layer to be enhanced.

Abstract: There is provided a semiconductor device having a structure that can suppress occurrence of chipping in a device region and that can reduce manufacturing cost of the semiconductor device. A semiconductor device includes a substrate and a first amorphous insulating film. The substrate has a main surface and an end surface. The main surface includes a peripheral region and a device region. The first amorphous insulating film is disposed on the peripheral region, and is separated from the device region. The first amorphous insulating film extends along the end surface in the form of a stripe. The first amorphous insulating film is flush with the end surface.

Abstract: A signal processing device includes an oscillation circuit, a protection target circuit, a delay time detection circuit, and a clock control circuit. The oscillation circuit receives the frequency control signal and generates a clock signal having a frequency corresponding to the frequency control signal. According to the above-mentioned configuration, even when a delay failure due to aging occurs in the signal processing device, it is possible to prevent a malfunction.

Abstract: A light-emitting device includes a plurality of organic EL elements. Each of the organic EL elements includes a reflection electrode, a hole transport region, an electron-trapping luminescent layer, and a light extraction electrode in this order. The hole transport region has a sheet resistance of 4.0×107 ?/sq. or more at a current of 0.1 nA/pixel, and the total thickness of the hole transport region and the electron-trapping luminescent layer is equivalent to an optical path length enabling emission from the electron-trapping luminescent layer to be enhanced.

Abstract: The present disclosure provides an organic compound expressed by the following General Formula 1: In General Formula 1, a partial structure Z1 represents a condensed polycyclic group that may include a nitrogen atom in a skeleton, and that includes at least one of a five-membered ring and a six-membered ring. The partial structure Z1 may include, as a substituent, a carbonyl group, a dicyanovinylidene group, a halogen atom, a cyano group, an alkyl group, an alkoxy group, an aromatic heterocyclic group, or an aryl group. R1 and R2 represent an alkyl group, aryl group, an aromatic heterocyclic group, a halogen group, or a cyano group. Ar1 represents an arylene group or a divalent aromatic heterocyclic group, and Ar2 and Ar3 represent an aryl group or an aromatic heterocyclic group. n represents an integer of 1 to 4.

Abstract: The present invention provides a light-emitting device including a substrate, a first EL element, and a second EL element, the first EL element and the second EL element each including a lower electrode, an organic compound layer including a light-emitting layer, an upper electrode, and a color filter in this order from the substrate, and an insulating layer that covers an end portion of the lower electrode. A first color filter of the first EL element and a second color filter of the second EL element overlap each other when viewed in plan in an overlapping region, and an inclined portion closest to the first EL element among inclined portions of the insulating layer of the second EL element and the overlapping region overlap each other when viewed in plan.

Abstract: The present invention provides an organic compound represented by general formula [1] described in claims. In general formula [1], Ar1 and Ar2 are each independently selected from an aryl group and a heteroaryl group. In general formula [1], R1 to R3 are each a hydrogen atom or a substituent. R4 is an electron-withdrawing substituent. X1 is oxygen or sulfur. Y1 to Y3 are each independently selected from a carbon atom and a nitrogen atom.

Abstract: A semiconductor device comprises an electrode on a substrate, an insulating layer covering an edge of the electrode and disposed on the substrate, and an organic layer comprising a charge transport layer on the electrode and insulating layer and a functional layer, wherein the insulating layer has a first portion forming an angle of 0° to 50° with respect to a surface parallel to a lower surface of the electrode, a second portion located closer to the substrate than the first portion and sloping at more than 50°, and a third portion located closer to the organic layer than the first portion and sloping at more than 50°, wherein a length of the third portion in a direction perpendicular to the parallel surface is larger than a thickness of the charge transport layer at a position in contact with the electrode.

Abstract: A semiconductor apparatus include a first electrode, an insulating layer covering an end of the first electrode, a functional layer arranged on the first electrode and the insulating layer, and a second electrode arranged above the functional layer, wherein, in a cross-section passing through the insulating layer, and the first electrode, the insulating layer includes a first portion having a side surface inclining at an angle of 45° or more and 90° or less, a second portion having a side surface inclining at an angle smaller than 45°, and a third portion below the first portion, and having a side surface inclining at an angle smaller than 45°, and wherein a length of the second portion in a direction vertical to the first electrode is larger than that of the third portion.

Abstract: A display device according to an embodiment of the present invention includes first and second electroluminescent elements on a substrate. The first and second electroluminescent elements each include a lower electrode, a functional layer including a light-emitting layer, an upper electrode, and a first or second color filter. The display device includes an overlapping region where the first and second color filters overlap each other in a plan view. Light transmitted through the first color filter has a higher luminosity factor than light transmitted through the second color filter. L2>L1, wherein L2 is the distance between the light-emitting region of the second electroluminescent element and the second color filter, and L1 is the distance between the light-emitting region of the first electroluminescent element and the first color filter.

Abstract: The present invention provides a light-emitting device including a substrate, a first EL element, and a second EL element, the first EL element and the second EL element each including a lower electrode, an organic compound layer including a light-emitting layer, an upper electrode, and a color filter in this order from the substrate, and an insulating layer that covers an end portion of the lower electrode. A first color filter of the first EL element and a second color filter of the second EL element overlap each other when viewed in plan in an overlapping region, and an inclined portion closest to the first EL element among inclined portions of the insulating layer of the second EL element and the overlapping region overlap each other when viewed in plan.