Patents by Inventor Tetsuro Nakasugi
Tetsuro Nakasugi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 6914252Abstract: Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.Type: GrantFiled: January 26, 2004Date of Patent: July 5, 2005Assignee: Kabushiki Kaisha ToshibaInventor: Tetsuro Nakasugi
-
Patent number: 6897454Abstract: An exposure method using an energy beam exposure apparatus capable of controlling magnitude relation between blurs of energy beam in first and second directions for exposing a pattern on a sample in the apparatus in a state in which the blur of energy beam in one direction of the first and second directions is set smaller than the blur of energy beam in the other direction comprises adjusting the magnitude relation of the blurs of energy beam in the first and second directions, adjusting the direction of the sample in the apparatus on the basis of the pattern and the magnitude relation of the blurs of energy beam in the first and second directions, and projecting the pattern onto the sample by exposing the sample to the energy beam and using shape correction of the pattern needed to compensate blurs of energy beam in the first and second directions.Type: GrantFiled: May 23, 2003Date of Patent: May 24, 2005Assignee: Kabushiki Kaisha ToshibaInventors: Noriaki Sasaki, Tetsuro Nakasugi
-
Publication number: 20050088099Abstract: A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.Type: ApplicationFiled: September 24, 2004Publication date: April 28, 2005Inventors: Takumi Ota, Tetsuro Nakasugi
-
Publication number: 20050048413Abstract: There is disclosed a pattern forming method comprising providing a first film having conductivity above a substrate to be processed, providing a second film having an acid diffusion preventing function above the first film, providing a third film having photosensitivity on the second film, and exposing a predetermined pattern on the third film by applying an energy beam onto the third film.Type: ApplicationFiled: July 20, 2004Publication date: March 3, 2005Inventor: Tetsuro Nakasugi
-
Patent number: 6818364Abstract: A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.Type: GrantFiled: May 12, 2004Date of Patent: November 16, 2004Assignee: Kabushiki Kaisha ToshibaInventor: Tetsuro Nakasugi
-
Publication number: 20040206918Abstract: A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.Type: ApplicationFiled: May 12, 2004Publication date: October 21, 2004Applicant: Kabushiki Kaisha ToshibaInventor: Tetsuro Nakasugi
-
Patent number: 6803589Abstract: There is disclosed an apparatus applied to exposure by a charged beam, having a pattern information acquiring section acquiring information on a character projection pattern formed in a character projection aperture mask, a first information storing section storing information on a reference pattern, and an identifying section identifying a shape of the character projection pattern by comparing the information on the character projection pattern with the information on the reference pattern.Type: GrantFiled: September 21, 2001Date of Patent: October 12, 2004Assignee: Kabushiki Kaisha ToshibaInventor: Tetsuro Nakasugi
-
Publication number: 20040149935Abstract: Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.Type: ApplicationFiled: January 26, 2004Publication date: August 5, 2004Applicant: Kabushiki Kaisha ToshibaInventor: Tetsuro Nakasugi
-
Patent number: 6762421Abstract: A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.Type: GrantFiled: March 7, 2002Date of Patent: July 13, 2004Assignee: Kabushiki Kaisha ToshibaInventor: Tetsuro Nakasugi
-
Patent number: 6737658Abstract: A first beam radiation is effected by uniformly radiating an electron beam on a vicinity of an underlying mark formed on a sample. The underlying mark is formed of a material with an emission efficiency of secondary electrons different from that of the other part of the sample. Thus, a surface of the sample is charged. A second beam radiation is effected by radiating an electron beam under conditions different from those of the first beam radiation, thereby scanning the mark. Secondary electrons from the surface of the sample are detected to determined the mark position. On the basis of the mark position, an alignment exposure is effected.Type: GrantFiled: September 26, 2000Date of Patent: May 18, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Tetsuro Nakasugi, Toru Koike
-
Patent number: 6703629Abstract: Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.Type: GrantFiled: July 26, 2001Date of Patent: March 9, 2004Assignee: Kabushiki Kaisha ToshibaInventor: Tetsuro Nakasugi
-
Publication number: 20040011966Abstract: An exposure method using an energy beam exposure apparatus capable of controlling magnitude relation between blurs of energy beam in first and second directions for exposing a pattern on a sample in the apparatus in a state in which the blur of energy beam in one direction of the first and second directions is set smaller than the blur of energy beam in the other direction comprises adjusting the magnitude relation of the blurs of energy beam in the first and second directions, adjusting the direction of the sample in the apparatus on the basis of the pattern and the magnitude relation of the blurs of energy beam in the first and second directions, and projecting the pattern onto the sample by exposing the sample to the energy beam and using shape correction of the pattern needed to compensate blurs of energy beam in the first and second directions.Type: ApplicationFiled: May 23, 2003Publication date: January 22, 2004Inventors: Noriaki Sasaki, Tetsuro Nakasugi
-
Publication number: 20030190070Abstract: To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional-displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.Type: ApplicationFiled: April 7, 2003Publication date: October 9, 2003Applicant: Kabushiki Kaisha ToshibaInventors: Atsushi Ando, Kazuyoshi Sugihara, Katsuya Okumura, Tetsuro Nakasugi
-
Patent number: 6512237Abstract: A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.Type: GrantFiled: February 15, 2002Date of Patent: January 28, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Tetsuro Nakasugi, Yuichiro Yamazaki, Hideaki Abe
-
Patent number: 6507034Abstract: There are provided a second aperture having a beam adjustment opening group and a pattern exposure opening group, a stage for mounting a wafer to which a pattern should be transferred, and a control computer for controlling an electron beam to be irradiated onto the wafer. The control computer has a drawing parameter table which stores an optimum beam adjustment parameter for an electron beam using a pattern density as a parameter. A pattern is transferred by selecting an optimum beam adjustment parameter corresponding to the pattern density from the drawing parameter table for each pattern.Type: GrantFiled: September 8, 2000Date of Patent: January 14, 2003Assignee: Kabushiki Kaisha ToshibaInventor: Tetsuro Nakasugi
-
Publication number: 20020151140Abstract: An exposure parameter obtaining method comprising forming a charged reference pattern and a plurality of charged exposure patterns at a surface region of a to-be-exposed insulation substrate by projecting a charged beam with a first incident energy using a reference pattern whose exposure parameter has been known beforehand and all of selected exposure patterns to be corrected, forming electron signal images for the charged reference pattern and the plurality of charged exposure patterns on the basis of charged particles including secondary electrons by scanning the surface of the insulation substrate with a charged beam with a second incident energy lower than the first incident energy, and creating, on the basis of the electron signal images, the exposure parameters including at least one of position, focal point, astigmatism, rotation, and magnification for all of the selected exposure patterns to be corrected.Type: ApplicationFiled: April 16, 2002Publication date: October 17, 2002Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Tetsuro Nakasugi
-
Publication number: 20020127484Abstract: A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.Type: ApplicationFiled: March 7, 2002Publication date: September 12, 2002Applicant: Kabushiki Kaisha ToshibaInventor: Tetsuro Nakasugi
-
Publication number: 20020072012Abstract: A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.Type: ApplicationFiled: February 15, 2002Publication date: June 13, 2002Applicant: Kabushiki Kaisha ToshibaInventors: Tetsuro Nakasugi, Yuichiro Yamazaki, Hideaki Abe
-
Patent number: 6376136Abstract: A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.Type: GrantFiled: December 17, 1999Date of Patent: April 23, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Tetsuro Nakasugi, Yuichiro Yamazaki, Hideaki Abe
-
Publication number: 20020036761Abstract: There is disclosed an apparatus applied to exposure by a charged beam, comprising a pattern information acquiring section acquiring information on a character projection pattern formed in a character projection aperture mask, a first information storing section storing information on a reference pattern, and an identifying section identifying a shape of the character projection pattern by comparing the information on the character projection pattern with the information on the reference pattern.Type: ApplicationFiled: September 21, 2001Publication date: March 28, 2002Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Tetsuro Nakasugi