Abstract: A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.

Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

Abstract: Disclosed is a method for producing a printed textile item including: applying a pretreatment liquid to a fabric, and applying a white ink using an inkjet method to the fabric to which the pretreatment liquid has been applied, wherein the pretreatment liquid contains a polyvalent metal salt, a surfactant, and water, and the white ink contains a white inorganic pigment, resin particles, a surfactant, and water.

Abstract: Provided is an aqueous ink for textile inkjet printing including a pigment, a binder resin, and water, wherein the binder resin contains a water-dispersible (meth)acrylic resin, a water-dispersible urethane resin, and a water-dispersible polyester resin, and a mass ratio of the water-dispersible polyester resin relative to the water-dispersible urethane resin is at least 0.2. A method for producing a printed textile item is also provided.

Abstract: A projection system includes a projection device that projects drawings individually onto a plurality of work spots in a work site. The projection device includes a driver that changes an orientation of the projection device. When drawings are individually projected onto a first work spot and a second work spot in a stated sequence, and the second work spot is outside a projection angle that is projectable by the projection device, the driver changes the orientation of the projection device to include the second work spot within the projection angle after work at the first work spot is finished. The first work spot and the second work spot are included in the plurality of work spots.

Abstract: The aluminum alloy in the cross-section of the surface layer region of the aluminum alloy plate contains a compound containing one or more elements selected from the group consisting of silicon, magnesium, iron, copper, manganese, chromium, zinc, zirconium, and titanium, and aluminum. The number of fields of view containing the compound having an equivalent circle diameter of 5 ?m or more out of 10 fields of view extracted from the cross-section is 3 or less. In the cross-section, the number density of the compound having an equivalent circle diameter of 1.5 ?m or more and less than 5.0 ?m is 0.0010 per ?m2 or less, and the area ratio of the compound having an equivalent circle diameter of 0.5 ?m or more is 0.1% or more and less than 1.0%.

Abstract: A polarization-maintaining optical fiber includes at least one polarization maintaining core, a first cladding surrounding the at least one polarization maintaining core, and a second cladding surrounding the first cladding. The at least one polarization maintaining core includes a core and a pair of low-refractive-index portions each having a refractive index lower than a refractive index of the core. In a cross section, at least a portion of an outer periphery of each of the pair of low-refractive-index portions is in contact with the core, and an outer periphery of the core, excluding portions each being in contact with the low-refractive-index portions, has a circular shape. A maximum value of an absolute value of a residual stress in the cross section is 100 MPa or less. A mode-field flattening f is 0.05 to 0.40 at any wavelength within a range of 850 nm to 1625 nm.

Abstract: A white light emitting device includes: first light-emitting units to which a first current is applied; and second light-emitting units to which a second current which is different from the first current is applied. When the first current is applied to the first light-emitting units and the second current is applied to the second light-emitting units, an average emission chromaticity of the first light-emitting units and an average emission chromaticity of the second light-emitting units are identical colors. When the same current is applied to both the first light-emitting units and the second light-emitting units, the average emission chromaticity of the first light-emitting units and the average emission chromaticity of the second light-emitting units are non-identical colors.

Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

Abstract: An MCF having a structure excellent in mass productivity and suppressing increases in splicing cost and loss are provided. The MCF includes 12 or 16 cores, a cladding, and a coating. The cores are arranged at positions of line symmetry while no adjacent relationship is established between the cores having an adjacent relationship with any core. A coating diameter is 235-265 ?m, a cladding diameter CD is from CDnominal?1 ?m to CDnominal+1 ?m with a nominal value CDnominal of 195 ?m or less, an MFD at 1310 nm is from MFD-reference-value ?0.4 ?m to the MCF-reference-value+0.4 ?m with the MFD-reference-value of 8.2-9.2 ?m, and a 22 m-cable-cutoff wavelength ?cc is 1260-1360 nm. A core's zero-dispersion wavelength is a wavelength-reference-value ?12 nm to the wavelength-reference-value+12 nm with the wavelength-reference-value of 1312-1340 nm, and a dispersion slope at the wavelength is 0.092 ps/(nm2·km) or less.

Abstract: A multi-core optical fiber includes: a pair of cores; and a cladding that covers both of the pair of cores. A diameter of the cladding is 124 ?m or more and 126 ?m or less. A distance between centers of the pair of cores is 46.5 ?m or less. Cross talk between counter-propagating cores at a wavelength of 1550 nm is ?30 dB/100 km or less.

Abstract: An MCF includes a plurality of cores each extending in a direction along a central axis and a cladding covering each of the plurality of cores. The cladding includes a low refractive index barrier. The low refractive index barrier includes an alkali metal element. A relative refractive index of the low refractive index barrier is lower than an average value of a relative refractive indices of the cladding overall. The core interval is set such that a total sum of the power coupling coefficients between a specific core among the plurality of cores and each of all remaining cores is 2.3×10?4/km or less.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A mode-dependent loss measurement device measures a mode-dependent loss of a measurement target optical fiber including a coupled MCF. The device includes a light source, a light receiver, a mode coupled state changer, and an analysis unit. The light source inputs light to an input end of an excitation optical fiber including another coupled MCF. The light receiver detects a sum of powers of outputted light beams from a plurality of core end faces positioned on an output end of the measurement target optical fiber. The mode coupled state changer changes a mode coupled state of the excitation optical fiber. The analysis unit obtains a mode-dependent loss of the measurement target optical fiber from variations in optical powers detected by the light receiver.

Abstract: A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.

Abstract: The MCF of the present disclosure suppresses XT and leakage loss at 1.565 ?m or 1.625 ?m for bidirectional communication. The MCF comprises 12 core units each including a core and a depressed layer, a common cladding, and a resin coating. The units are arranged so that no adjacent relationship is established between cores each having an adjacent relationship with a specific core selected from the units, and are arranged so that centers of the units are line symmetric with a symmetry axis intersecting with the central axis and passing through none of the centers of the units. The resin coating's diameter is 250±15 ?m, an effective area at 1.550 ?m is 70 ?m2 or more, and a 22 m-length cable cutoff wavelength is 1.530 ?m or less. A center-to-center interval between adjacent cores, a shortest distance from the core center to the cladding interface, and a cladding's diameter satisfy specific conditions.

Abstract: This MCF ensures sufficient manufacturing tolerance, is excellent in mass productivity, and is also capable of suppressing degradation of splice loss. The MCF includes four cores and a common cladding. Each core has adjacent relationships with two cores of remaining cores, an adjacent core interval ? is from ?nominal?0.9 ?m to ?nominal+0.9 ?m, a common cladding diameter is from 124 ?m to 126 ?m, an MFD, ?cc and dcoat at a wavelength of 1310 nm satisfy a predetermined relationship, the MFD is from a MFD-reference-value?0.4 ?m to the MFD-reference-value+0.4 ?m with the MFD-reference-value of from 8.6 ?m to 9.2 ?m, a zero-dispersion wavelength is from a wavelength-reference-value?12 nm to the wavelength-reference-value+12 nm with the wavelength-reference-value of from 1312 nm to 1340 nm, a dispersion slope at a zero-dispersion wavelength is 0.092 ps/(nm2·km) or less, ?cc is 1260 nm or less, and a predetermined structural condition and an optical condition are satisfied.

Abstract: A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.