Abstract: An optical waveguide device that enables single-mode coupling between cores to be coupled by controlling optical signal intensity variation due to an MPI. The optical waveguide device includes a first device end surface, a second device end surface, a waveguide, and a cladding layer. The waveguide has a first waveguide end surface and a second waveguide end surface, and light beams of a plurality of modes having different orders are guided. Further, the waveguide has one or more bent portions. The cladding layer has a refractive index lower than a refractive index of the waveguide. The waveguide has a waveguide length L of 5×106 [nm] or more and 100×106 [nm] or less, and has a structure in which an inter-mode group delay time difference ??1 satisfies a condition given by |??1|?½×10?12 [s]/L.

Abstract: This disclosure relates to an MCF fiber being usable for short-haul O-band transmission, having a standard coating diameter in an MFD almost the same as that of a general-purpose SMF, being capable of splicing fibers without either a marker or a polarity, and including 12 cores usable for counter propagation. The MCF includes 12 cores and a common cladding, and the common cladding has an outer periphery with a circular cross-section, the 12 cores are arranged such that no adjacent relationship is established between cores each having an adjacent relationship with any core, and are arranged such that centers of the 12 cores are line symmetric with respect to an axis as a symmetry axis that intersects with the central axis and that passes through none of the centers of the 12 cores, and an arrangement of the centers of the 12 cores has rotational symmetry once.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: An iron-based sintered body includes a metal matrix and complex oxide particles contained in the metal matrix. When a main viewing field having an area of 176 ?m×226 ?m is taken on a cross section of the iron-based sintered body and divided into a 5×5 array of 25 viewing fields each having an area of 35.2 ?m×45.2 ?m, the complex oxide particles have an average equivalent circle diameter of from 0.3 ?m to 2.5 ?m inclusive, and a value obtained by dividing the total area of the 25 viewing fields by the total number of complex oxide particles present in the 25 viewing fields is from 10 ?m2/particle to 1,000 ?m2/particle inclusive. The number of viewing fields in which no complex oxide particle is present is 4 or less out of the 25 viewing fields.

Abstract: An MCF having a structure excellent in mass productivity and suppressing increases in splicing cost and loss are provided. The MCF includes 12 or 16 cores, a cladding, and a coating. The cores are arranged at positions of line symmetry while no adjacent relationship is established between the cores having an adjacent relationship with any core. A coating diameter is 235-265 ?m, a cladding diameter CD is from CDnominal?1 ?m to CDnominal+1 ?m with a nominal value CDnominal of 195 ?m or less, an MFD at 1310 nm is from MFD-reference-value?0.4 ?m to the MCF-reference-value+0.4 ?m with the MFD-reference-value of 8.2-9.2 ?m, and a 22 m-cable-cutoff wavelength ?cc is 1260-1360 nm. A core's zero-dispersion wavelength is a wavelength-reference-value?12 nm to the wavelength-reference-value+12 nm with the wavelength-reference-value of 1312-1340 nm, and a dispersion slope at the wavelength is 0.092 ps/(nm2·km) or less.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A semiconductor device includes: a substrate (10); a semiconductor layer (20) disposed on a main surface of this substrate (10); and a first main electrode (30) and a second main electrode (40), which are disposed on the substrate (10) separately from each other with the semiconductor layer (20) sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer (20) includes: a first conductivity-type drift region (21) through which a main current flows; a second conductivity-type column region (22) that is disposed inside the drift region (21) and extends in parallel to a current path; and an electric field relaxation region (23) that is disposed in at least a part between the drift region (21) and the column region (22) and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

Abstract: A semiconductor device includes: a drift region of a first conductive type including a contact section and extension sections extending along the main surface of a substrate; column regions of a second conductive type which alternate with the extension sections in a perpendicular direction to the extension direction of the extension sections and each includes an end connecting to the contact section; a well region of a second conductive type which connects to the other end of each column region and tips of the extension sections; and electric field relaxing electrodes which are provided above at least some of residual pn junctions with an insulating film interposed therebetween. Herein, the residual pn junctions are pn junctions other than voltage holding pn junctions formed in interfaces between the extension sections and the column regions.

Abstract: The disclosure relates to an optical connection device reducing a connection loss between an SCF and an MCF. The optical connection device includes plural relay fibers and a capillary having third and fourth end faces. Each relay fiber includes a first core of ?1, a second core of ?2, and a cladding of ?3. The capillary includes a tapered portion with an outer diameter ratio R of the fourth end face to the third end face of 0.2 or less. In each relay fiber, a value of Formula (V2?V1)/R falls within a range from 156% ?m2 to 177% ?m2, V1 (% ?m2) is given by (?·r1b2)×(?1??2) by using a radius r1b (?m) of the first core, and V2 (% ?m2) is given by (?·r2b2)×(?1??2) by using a radius r2b (?m) of the second core.

Abstract: An MCF according to one embodiment simultaneously achieves excellent economic rationality and high compatibility in short-distance optical transmission. The MCF includes a plurality of core portions, a common cladding, and a resin coating. Each of the core portions includes a core, an inner cladding, and a trench layer. At least four core portions arranged on a straight line have substantially the same relative refractive index difference between the core and the inner cladding. The refractive index profile of a first core portion and a second core portion adjacent to each other among the four core portions has a shape in which the refractive index of the inner cladding is offset with respect to the refractive index of the common cladding so that the magnitude relationship of the refractive index between the inner cladding and the common cladding is reversed.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A manufacturing system according to an aspect of the present disclosure includes: a molding apparatus configured to uniaxially press raw material powder containing metal powder to fabricate a powder compact whose whole or part has a relative density of 93% or more; a robot processing apparatus including an articulated robot configured to machine the powder compact to fabricate a processed molded article; and an induction heating sintering furnace configured to sinter the processed molded article by high frequency induction heating to fabricate a sintered product.

Abstract: A state analysis device includes a data classification unit, an analysis unit, and a determination unit. The data classification unit is configured to classify input data for each of a plurality of verification items associated with each of a plurality of control items. The analysis unit is configured to execute analysis associated with each combination of a plurality of control items and a plurality of verification items on the basis of data classified by the data classification unit. The determination unit is configured to comprehensively determine analysis results in units of combinations of the control items and the verification items on the basis of analysis results analyzed by the analysis unit.

Abstract: The present disclosure includes by controlling at least either one of a switching frequency of a switching element (S) or a duty ratio indicating an ON period of the switching element, securing delay time from voltage at both ends of the switching element reaches zero voltage by resonance of the resonant circuit (L0, C0) in an OFF state of the switching element until the switching element is turned on, and turning on the switching element within the delay time.

Abstract: An optical amplifier is provided in which adjacent ones of a plurality of cores each containing a rare-earth element and included in an amplifying multi-core optical fiber (MCF) serve as coupled cores at an amplifying wavelength, a connecting MCF is connected to the amplifying MCF, a pump light source is connected to the connecting MCF, and the pump light source pumps the rare-earth element in the amplifying MCF through the connecting MCF.

Abstract: The present embodiment relates to an optical amplifier and the like having a structure for enabling efficient use of pumping light while avoiding complication of a device structure. In such an optical amplifier, since pumping light from a pumping light source is supplied to each core of an amplification MCF, a coupling MCF in which adjacent cores form a coupled core is arranged between the amplification MCF and the pumping light source. The pumping light source is optically connected to a specific core of the coupling MCF, and pumping light is coupled from the specific core to remaining cores except the specific core in the coupling MCF before pumping light is supplied to each core of the amplification MCF. This enables coupling of pumping light between optically connected cores between the amplification MCF and the coupling MCF.

Abstract: An MCF according to the disclosure has a structure preventing deterioration in quality of optical transmission signals. The MCF comprises cores, a common cladding, and a coating. Any of the cores has a coating leakage loss of 0.01 dB/km or more at a wavelength within a wavelength range of from 850 nm to 1700 nm. The coating includes a leaked light propagation suppressive coating layer having a first optical property or a second optical property to light with a wavelength within a wavelength range of from 850 nm to 1700 nm or from 1260 nm to 1625 nm. The first optical property is defined by, as an attenuation index of the light, an absorbance per 1 ?m thickness being 0.1 dB or more. The second optical property is defined by a product of absorbance per 1 ?m thickness and a thickness being 0.1 dB or more.

Abstract: An MCF or the like according to the present disclosure ensures sufficient manufacturing tolerance, is excellent in mass productivity, and is also capable of suppressing degradation of splice loss. The MCF includes four cores that extend along a central axis, and a common cladding. On a cross-section, the common cladding has a circular outer periphery, the four cores are arranged at positions to be line symmetric with respect to a straight line that intersects with a central axis and that intersects with none of the four cores, and a core arrangement defined by the four cores has rotational symmetry once with central axis being a center of rotation.

Abstract: This MCF ensures sufficient manufacturing tolerance, is excellent in mass productivity, and is also capable of suppressing degradation of splice loss. The MCF includes four cores and a common cladding. Each core has adjacent relationships with two cores of remaining cores, an adjacent core interval ? is from ?nominal?0.9 ?m to ?nominal+0.9 ?m, a common cladding diameter is from 124 ?m to 126 ?m, an MFD, ?cc and dcoat at a wavelength of 1310 nm satisfy a predetermined relationship, the MFD is from a MFD-reference-value?0.4 ?m to the MFD-reference-value+0.4 ?m with the MFD-reference-value of from 8.6 ?m to 9.2 ?m, a zero-dispersion wavelength is from a wavelength-reference-value?12 nm to the wavelength-reference-value+12 nm with the wavelength-reference-value of from 1312 nm to 1340 nm, a dispersion slope at a zero-dispersion wavelength is 0.092 ps/(nm2·km) or less, ?cc is 1260 nm or less, and a predetermined structural condition and an optical condition are satisfied.

Abstract: This disclosure relates to an MCF fiber being usable for short-haul O-band transmission, having a standard coating diameter in an MFD almost the same as that of a general-purpose SMF, being capable of splicing fibers without either a marker or a polarity, and including 12 cores usable for counter propagation. The MCF includes 12 cores and a common cladding, and the common cladding has an outer periphery with a circular cross-section, the 12 cores are arranged such that no adjacent relationship is established between cores each having an adjacent relationship with any core, and are arranged such that centers of the 12 cores are line symmetric with respect to an axis as a symmetry axis that intersects with the central axis and that passes through none of the centers of the 12 cores, and an arrangement of the centers of the 12 cores has rotational symmetry once.