Abstract: This MCF ensures sufficient manufacturing tolerance, is excellent in mass productivity, and is also capable of suppressing degradation of splice loss. The MCF includes four cores and a common cladding. Each core has adjacent relationships with two cores of remaining cores, an adjacent core interval ? is from ?nominal?0.9 ?m to ?nominal+0.9 ?m, a common cladding diameter is from 124 ?m to 126 ?m, an MFD, ?cc and dcoat at a wavelength of 1310 nm satisfy a predetermined relationship, the MFD is from a MFD-reference-value?0.4 ?m to the MFD-reference-value+0.4 ?m with the MFD-reference-value of from 8.6 ?m to 9.2 ?m, a zero-dispersion wavelength is from a wavelength-reference-value?12 nm to the wavelength-reference-value+12 nm with the wavelength-reference-value of from 1312 nm to 1340 nm, a dispersion slope at a zero-dispersion wavelength is 0.092 ps/(nm2·km) or less, ?cc is 1260 nm or less, and a predetermined structural condition and an optical condition are satisfied.

Abstract: This disclosure relates to an MCF fiber being usable for short-haul O-band transmission, having a standard coating diameter in an MFD almost the same as that of a general-purpose SMF, being capable of splicing fibers without either a marker or a polarity, and including 12 cores usable for counter propagation. The MCF includes 12 cores and a common cladding, and the common cladding has an outer periphery with a circular cross-section, the 12 cores are arranged such that no adjacent relationship is established between cores each having an adjacent relationship with any core, and are arranged such that centers of the 12 cores are line symmetric with respect to an axis as a symmetry axis that intersects with the central axis and that passes through none of the centers of the 12 cores, and an arrangement of the centers of the 12 cores has rotational symmetry once.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: An MCF having a structure excellent in mass productivity and suppressing increases in splicing cost and loss are provided. The MCF includes 12 or 16 cores, a cladding, and a coating. The cores are arranged at positions of line symmetry while no adjacent relationship is established between the cores having an adjacent relationship with any core. A coating diameter is 235-265 ?m, a cladding diameter CD is from CDnominal?1 ?m to CDnominal+1 ?m with a nominal value CDnominal of 195 ?m or less, an MFD at 1310 nm is from MFD-reference-value?0.4 ?m to the MCF-reference-value+0.4 ?m with the MFD-reference-value of 8.2-9.2 ?m, and a 22 m-cable-cutoff wavelength ?cc is 1260-1360 nm. A core's zero-dispersion wavelength is a wavelength-reference-value?12 nm to the wavelength-reference-value+12 nm with the wavelength-reference-value of 1312-1340 nm, and a dispersion slope at the wavelength is 0.092 ps/(nm2·km) or less.

Abstract: An MCF cable according to an embodiment contains a plurality of MCFs each including at least one coupled core group and a common cladding. ? is set such that ? at a wavelength of 1550 nm is falls within a range of from 1×10?1 [m?1] to 1×103 [m?1], and (??Cavg)/(2?) or (??Cf)/(2?) is set in a specific range in a wavelength band of from 1530 nm to 1625 nm, where Cavg [m?1], Cf [m?1], and ftwist [turn/m] represent the average curvature, the pseudo-curvature, and the average torsion, respectively, for each MCF, and ? [m?1], ? [m?1], and ? [m] represent the coefficient of mode coupling between adjacent cores, the average of propagation constants, and the core center-to-center distance, respectively.

Abstract: A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.

Abstract: The semiconductor device includes at least three semiconductor elements disposed directly or indirectly on a planar member and constituting an upper arm and a lower arm which perform ON and OFF action at mutually differential times; an upper-surface voltage applied region of each semiconductor element is configured to be narrower than an area of the aforementioned whole semiconductor element in planar view; and each semiconductor element is disposed so that the shortest distance between the semiconductor elements constituting the upper arm is formed so as to be longer than the shortest distance between the semiconductor element constituting the upper arm and the semiconductor element constituting the lower arm.

Abstract: A mode-dependent loss measurement device according to an embodiment of the present disclosure measures a mode-dependent loss of a measurement target optical fiber including a coupled MCF. The device includes a light source, a light receiver, mode coupled state change means, and an analysis unit. The light source inputs light to an input end of an excitation optical fiber including another coupled MCF. The light receiver detects a sum of powers of outputted light beams from a plurality of core end faces positioned on an output end of the measurement target optical fiber. The mode coupled state change means changes a mode coupled state of the excitation optical fiber. The analysis unit obtains a mode-dependent loss of the measurement target optical fiber from variations in optical powers detected by the light receiver.

Abstract: A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.

Abstract: A wound battery includes an electrode assembly in which a first electrode and a second electrode are wound together via a separator, the electrode assembly being accommodated in a battery case including a bottomed tube-shaped metallic can. The first electrode has a first uncoated region defined by an exposed portion of a first current collector sheet at an end of the first current collector sheet in the axial direction of winding. The first electrode includes a first current collector lead connected to the first uncoated region. The first uncoated region is disposed on the same side as the open end of the metallic can. The second electrode includes a second current collector lead connected thereto. The first and the second current collector leads extend toward the open end of the metallic can. At least a portion of the first uncoated region is covered with an insulating layer, and the insulating layer extends beyond an end face of the first uncoated region.

Abstract: A photovoltaic device includes an organic semiconductor and an inorganic semiconductor. The organic semiconductor includes a photoactive region that generates excitons. The inorganic semiconductor has piezoelectricity and includes a dissociation region for dissociating carriers included in the excitons. A relationship of energy levels between the photoactive region and the dissociation region satisfies at least one equation ELUMO>EC or equation EHOMO<EV.

Abstract: The present invention relates to a method and device for measuring optical nonlinearity of an optical fiber to be measured comprising a plurality of cores having mutually coupled waveguide modes. The method includes, at least, preparing a laser light source emitting laser light and a detecting unit determining an optical intensity, inputting laser light into a specific core of the optical fiber to be measured, determining the intensity of a specific wavelength component caused by optical nonlinearity among the reflective light components from the optical fiber to be measured, and determining optical nonlinearity of the optical fiber to be measured on the basis of the intensity of the specific wavelength component.

Abstract: The present disclosure includes a drive circuit (2-4) for switching a switching element, and a variable capacity circuit (6A), connected between a control terminal (G) of the switching element and the drive circuit (2-4), capable of switching at least between a first capacity value and a second capacity value different from the first capacity value, and controls a capacity value between the control terminal and the drive circuit via the variable capacity circuit.

Abstract: A semiconductor device includes: a substrate; a semiconductor layer disposed on a main surface of the substrate; and a first main electrode and a second main electrode, which are disposed on the substrate separately from each other with the semiconductor layer sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer includes: a first conductivity-type drift region through which a main current flows; a second conductivity-type column region that is disposed inside the drift region and extends in parallel to a current path; and an electric field relaxation region that is disposed in at least a part between the drift region and the column region and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

Abstract: An optical fiber array includes: a multicore optical fiber in which the outer peripheral shape of cladding in a cross section has first and second convex surfaces symmetric with respect to a first axis, and first and second surfaces symmetric with respect to a second axis and closer than extensions of the first and second convex surfaces to the second axis; an arrangement component including a groove having a trapezoidal shape having first and second side surfaces mutually facing such that sectional shapes become closer toward a grove bottom, and a bottom surface; and a pressing member. With the first surface in surface contact with the pressing member, the first convex surface or a boundary portion between the first convex surface and the second surface, and the second convex surface or a boundary portion between the second surface and the second convex surface are in contact with the first and second side surfaces, respectively.

Abstract: A photovoltaic device includes an organic semiconductor and an inorganic semiconductor. The organic semiconductor includes a photoactive region that generates excitons. The inorganic semiconductor has piezoelectricity and includes a dissociation region for dissociating carriers included in the excitons. A relationship of energy levels between the photoactive region and the dissociation region satisfies at least one equation ELUMO>EC or equation EHOMO<EV.

Abstract: An MCF according to the disclosure has a structure preventing deterioration in quality of optical transmission signals. The MCF comprises cores, a common cladding, and a coating. Any of the cores has a coating leakage loss of 0.01 dB/km or more at a wavelength within a wavelength range of from 850 nm to 1700 nm. The coating includes a leaked light propagation suppressive coating layer having a first optical property or a second optical property to light with a wavelength within a wavelength range of from 850 nm to 1700 nm or from 1260 nm to 1625 nm. The first optical property is defined by, as an attenuation index of the light, an absorbance per 1 ?m thickness being 0.1 dB or more. The second optical property is defined by a product of absorbance per 1 ?m thickness and a thickness being 0.1 dB or more.

Abstract: A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.

Abstract: A method for collecting an iron-based powder includes the steps of; preparing a raw material powder containing a first metal powder containing 90% by mass or more of iron; forming a green compact by subjecting the raw material powder to uniaxial pressing using a die; machining the green compact; and collecting a second metal powder having an average particle diameter of 50 ?m or more and 500 ?m or less from machining chips generated in the step of machining.

Abstract: There are included: a metal member having a groove formed on a front side surface thereof; a thermally conductive member provided in an inside of the groove and having a thermal conductivity in an X-axial direction on the front side surface higher than a thermal conductivity in a Y-axial direction orthogonal to the X-axial direction on the front side surface; and a semiconductor element provided on the front side surface of the metal member, and at least a part of which is in contact with the thermally conductive member.