Abstract: A vehicle headlight system comprises a headlight that irradiates light in front of a host vehicle, a target detection section that is configured to detect a target present in front of the host vehicle, a display that is provided inside a vehicle cabin of the host vehicle, a first memory, a first processor that is coupled to the first memory, a second memory, and a second processor that is coupled to the second memory. The first processor includes a light irradiation control function that is configured to control light distribution of the headlight, based on a detection result by the target detection section.

Abstract: A method of manufacturing a semiconductor optical device of this disclosure includes the steps of forming an etch stop layer on an InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and forming a semiconductor laminate on the etch stop layer by stacking a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P. Further, an intermediate article of a semiconductor optical device of the present disclosure includes an InP growth substrate; an etch stop layer formed on the InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and a semiconductor laminate formed on the etch stop layer, including a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P stacked one another.

Abstract: A light distribution control device can perform diffused light distribution control designed to widen an irradiation range of a headlamp of an own vehicle. The light distribution control device is equipped with a recognition unit that recognizes a situation around the own vehicle, and a control unit that performs diffused light distribution control when a curve section in front of the own vehicle in a traveling direction thereof is detected, from a result of recognition by the recognition unit. The control unit controls the headlamp such that a non-required irradiation region where irradiation with light is not required is restrained from being irradiated with light and that a region other than the non-required irradiation region is irradiated with more light, when the non-required irradiation region is detected in the irradiation range of the headlamp in performing diffused light distribution control, from the result of recognition.

Abstract: A vehicle lighting control device includes: a control determination unit that determines whether or not a state of a vehicle is a control target state in which an arrival time required for the vehicle to arrive at a tunnel is less than a predetermined reference arrival time; and a lighting controller that executes a first control to control a headlight to a low beam when a forward vehicle is detected and to control the headlight to a high beam when the forward vehicle is not detected. The lighting controller is configured to prevent the headlight from being switched to the high beam in the first control when determination is made that the vehicle is in the control target state even when a state in which the forward vehicle is detected is changed to a state in which the forward vehicle is not detected.

Abstract: A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of ?1 or more, and a protective film is provided on the light extraction face.

Abstract: A light distribution control device can perform diffused light distribution control designed to widen an irradiation range of a headlamp of an own vehicle. The light distribution control device is equipped with a recognition unit that recognizes a situation around the own vehicle, and a control unit that performs diffused light distribution control when a curve section in front of the own vehicle in a traveling direction thereof is detected, from a result of recognition by the recognition unit. The control unit controls the headlamp such that a non-required irradiation region where irradiation with light is not required is restrained from being irradiated with light and that a region other than the non-required irradiation region is irradiated with more light, when the non-required irradiation region is detected in the irradiation range of the headlamp in performing diffused light distribution control, from the result of recognition.

Abstract: A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of ?1 or more, and a protective film is provided on the light extraction face.

Abstract: A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.

Abstract: A driving assist system installed on a vehicle includes a controller. The controller executes a drawing process that controls a luminescent device to draw an assist figure with a lateral width corresponding to a vehicle width of the vehicle on a road surface along a direction of travel of the vehicle.

Abstract: A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern.

Abstract: To provide a bonding-type semiconductor light-emitting device which has excellent reliabilities with smaller time deviations of the light output power and the forward voltage. A semiconductor light-emitting device 100 according to the present disclosure includes a conductive support substrate 80; a metal layer 60 containing a reflective metal provided on the conductive support substrate 10; a semiconductor laminate 30 formed from a stack of a plurality of InGaAsP group III-V compound semiconductor layers containing at least In and P provided on the reflective metal layer 60; an n-type InGaAs contact layer 20A provided on the semiconductor laminate 30; and an n-side electrode 93 provided on the n-type InGaAs contact layer 20A, wherein the center emission wavelength of light emitted from the semiconductor laminate 30 is 1000 to 2200 nm.

Abstract: Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate on the InP growth substrate; a step of bonding the semiconductor laminate to the support substrate formed from a Si substrate, with at least the metal bonding layer therebetween; and a step of removing the InP growth substrate.

Abstract: A driving assistance apparatus comprising a first object detecting sensor device, a second object detecting sensor device, and a control unit. The first object detecting sensor device detects an object and obtains the position and a certainty value of the object. The second object detecting sensor device detects an object and obtains the position and an object type for the object. The control unit executes collision avoidance control to avoid collision between a vehicle and a monitoring target object which is detected by the first object detecting sensor device when the certainty value of the monitoring target object is higher than a certainty threshold. If the monitoring target object is also detected by the second object detecting sensor device and its object type is a specific type, the certainty threshold is made larger.

Abstract: Provided is a semiconductor light-emitting device which can mitigate a multipeak in an emission spectrum in a bonding-type semiconductor light-emitting device having an InP cladding layer. The semiconductor light-emitting device of the present disclosure includes a first conductive type InP cladding layer, a semiconductor light-emitting layer, and a second conductive type InP cladding layer provided sequentially over a conductive support substrate, the second conductive type InP cladding layer being on a light extraction side, and the semiconductor light-emitting device further includes a metal reflective layer, between the conductive support substrate and the first conductive type InP cladding layer, for reflecting light emitted from the semiconductor light-emitting layer; and a plurality of recesses provided in a surface of the second conductive type InP cladding layer.

Abstract: A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern.

Abstract: A method of manufacturing a semiconductor optical device of this disclosure includes the steps of forming an etch stop layer on an InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and forming a semiconductor laminate on the etch stop layer by stacking a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P. Further, an intermediate article of a semiconductor optical device of the present disclosure includes an InP growth substrate; an etch stop layer formed on the InP growth substrate, the etch stop layer having a thickness of 100 nm or less; and a semiconductor laminate formed on the etch stop layer, including a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P stacked one another.

Abstract: To provide a bonding-type semiconductor light-emitting device which has excellent reliabilities with smaller time deviations of the light output power and the forward voltage. A semiconductor light-emitting device 100 according to the present disclosure includes a conductive support substrate 80; a metal layer 60 containing a reflective metal provided on the conductive support substrate 10; a semiconductor laminate 30 formed from a stack of a plurality of InGaAsP group III-V compound semiconductor layers containing at least In and P provided on the reflective metal layer 60; an n-type InGaAs contact layer 20A provided on the semiconductor laminate 30; and an n-side electrode 93 provided on the n-type InGaAs contact layer 20A, wherein the center emission wavelength of light emitted from the semiconductor laminate 30 is 1000 to 2200 nm.

Abstract: A driving assistance apparatus comprising a first object detecting sensor device, a second object detecting sensor device, and a control unit. The first object detecting sensor device detects an object and obtains the position and a certainty value of the object. The second object detecting sensor device detects an object and obtains the position and an object type for the object. The control unit executes collision avoidance control to avoid collision between a vehicle and a monitoring target object which is detected by the first object detecting sensor device when the certainty value of the monitoring target object is higher than a certainty threshold. If the monitoring target object is also detected by the second object detecting sensor device and its object type is a specific type, the certainty threshold is made larger.

Abstract: Provided is a Group III nitride epitaxial substrate that can suppress the occurrence of breakage during a device formation process and a method for manufacturing the same. A Group III nitride epitaxial substrate according to the present invention includes a Si substrate, an initial layer in contact with the Si substrate, and a superlattice laminate, formed on the initial layer, including a plurality of sets of laminates, each of the laminates including, in order, a first layer made of AlGaN with an Al composition ratio greater than 0.5 and 1 or less and a second layer made of AlGaN with an Al composition ratio greater than 0 and 0.5 or less. The Al composition ratio of the second layer progressively decreases with distance from the substrate.

Abstract: Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate on the InP growth substrate; a step of bonding the semiconductor laminate to the support substrate formed from a Si substrate, with at least the metal bonding layer therebetween; and a step of removing the InP growth substrate.