Abstract: To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o?0, and n=2/3m+a+4/3b?2/3o), and further containing boron and/or fluorine.

Abstract: To provide a phosphor having an emission spectrum with a broad peak in range from green color to red color, and having excellent emission efficiency and luminance. A phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (where element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 2.5<(a+b)/m<4.5, 0<a/m<2.0, 2.0<b/m<4.0, 0<o/m<1.0, o<n, n=2/3m+a+4/3b?2/3o.

Abstract: To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o?0, and n=2/3m+a+4/3b?2/3o), and further containing boron and/or fluorine.

Abstract: Disclosed herein is a method of manufacturing a semiconductor device having a thyristor formed by joining a first p-type semiconductor layer, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer in order, the method including the steps of: forming the second p-type semiconductor layer including a p-type impurity in a surface layer of a semiconductor substrate; forming the first n-type semiconductor layer including an n-type impurity on the semiconductor substrate including the second p-type semiconductor layer by epitaxial growth; forming a non-doped semiconductor layer on the first n-type semiconductor layer by epitaxial growth; and forming the first p-type semiconductor layer including a p-type impurity on the non-doped semiconductor layer by epitaxial growth.

Abstract: A light-emitting device of the present invention includes: a light-emitting element; and a phosphor layer containing phosphors that absorb light from the light-emitting element and wavelength-convert the absorbed light to emit light. The phosphor layer has a structure in which the phosphors are disposed on an applied adhesive with a thickness equal to or less than an average particle size of the phosphors. A thickness of the phosphor layer is equal to or less than five times the average particle size of the phosphors, and an occupancy ratio of the phosphors in the phosphor layer is 50% or more. Further, the phosphors disposed on the adhesive has an adjusted particle size.

Abstract: A light-emitting device includes: a light-emitting element whose main emission wavelength is 410 nm or less; and one phosphor layer or more stacked to cover a light-emitting surface of the light-emitting element and containing phosphors that absorb light from the light-emitting element and wavelength-convert the absorbed light to emit light.

Abstract: A light emitting device 10 includes: a lead frame 12a serving as a mounting portion having a cup 13; a light emitting element 14, mounted on the bottom face 13a of the cup, for emitting light having a predetermined peak wavelength; a layer of large phosphor particles 16, absorbed and formed on the light emitting element, for absorbing light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the light emitted from the light emitting element; small phosphor particles 18, which have a smaller particle diameter than that of the large phosphor particles, for absorbing at least one of light emitted from the large phosphor particles and light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the at least one of the light emitted from the large phosphor particles and the light emitted from the light emitting element; and a sealing member 20, in which the small phosphor particles are dispersed, for sealin

Abstract: A light emitting device 10 includes: a lead frame 12a serving as a mounting portion having a cup 13; a light emitting element 14, mounted on the bottom face 13a of the cup, for emitting light having a predetermined peak wavelength; a layer of first phosphor particles 16, absorbed and formed on the light emitting element, for absorbing light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the light emitted from the light emitting element; second phosphor particles 18 for absorbing at least one of light emitted from the first phosphor particles and light emitted from the light emitting element and for emitting light having a longer peak wavelength than that of the at least one of the light emitted from the first phosphor particles and the light emitted from the light emitting element; and a sealing member 20, in which the second phosphor particles are dispersed, for sealing the light emitting element and the layer of first phosphor particles in the cup

Abstract: To provide a phosphor having an emission spectrum with a broad peak in range from green color to red color, and having excellent emission efficiency and luminance. A phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (where element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 2.5<(a+b)/m<4.5, 0<a/m<2.0, 2.0<b/m<4.0, 0<o/m<1.0, o<n, n=2/3 m+a+4/3b?2/3o.

Abstract: To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o?0, and n=2/3m+a+4/3b?2/3o), and further containing boron and/or fluorine.

Abstract: A SiO2 film is formed as a thermal oxide film on a surface of a Si substrate. Next, the SiO2 film is heat-treated under a nitridation gas atmosphere to be changed to a SION film. As a result, a tensile stress toward a SiON film side acts on atoms existing on a surface layer of the Si substrate to cause distortion, so that the interatomic distance of the Si atoms in the Si substrate becomes longer. An amount of the distortion can be measured by, for example, an X-ray CTR scattering method. Next, a SiN film is formed on the SiON film by a CVD method or the like. The magnitude of the tensile stress acting on the Si substrate differs depending on the thickness of the SiN film. This method improves carrier mobility owing to the displacement of the Si atoms, so that sufficient carrier mobility can be obtained even when nitrogen concentration near an interface between the SiON film and the Si substrate is high.

Abstract: A method and an apparatus for a CVD comprising feeding a first gas flow, including a reactive gas, in a laminar flowing state and in a sheet state parallel to the surface of a substrate and feeding a second gas flow, including a non-reactive gas, in a direction perpendicular to that of said first gas flow, externally controlling the flow rates of the first and second gases so as to retain the laminar flowing state of said first gas flow and concentrate said first gas flow in the vicinity of said substrate and externally controlling the flow rate of said second gas flow to provide control and uniformity in the thickness of the layer to be formed.

Abstract: An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The combination of substrate heating source using infrared rays and a laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and improving the high reproducibility and controllability.

Abstract: A wafer, in which at least one via hole is made in an insulating film formed on the substrate, and a first metallic film is formed in the via hole is prepared. The wafer is held in a wafer holder in a reaction chamber under reduced pressure. WF.sub.6 gas and H.sub.2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer, such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film in the chemical vapor deposition process. The temperature difference is due to the differences of the adsorption ratios of infrared light of the insulating film, the substrate and the first metallic film. The WF.sub.6 gas and H.sub.2 gas are made to flow in flat or sheet form substantially parallel to the surface of the wafer, and in inernt gas, such as Ar, is made to flow toward the surface of the wafer to control the flow of WF.sub.6 and H.sub.2 gas.

Abstract: An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The apparatus has provision for feeding a second gas opposite the substrate to put the reactive gas in the vicinity of the substrate surface into laminar flow. The combination of substrate heating source using infrared rays and the laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and obtaining improved high reproducibility and controllability.

Abstract: A wafer, in which at least one via hole is made in an insulating film formed on the substrate, is held on a wafer holder in a reaction chamber under reduced pressure, WF.sub.6 gas is introduced into the reaction chamber so that a first metallic film of W is formed on the substrate in the via hole. The additional WF.sub.6 gas and H.sub.2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film. The temperature difference is created because of the differences of the absorption ratios of infrared components of the light between the insulating film, the substrate and the first metallic film. The WF.sub.6 gas and H.sub.

Abstract: A method of a chemical vapor deposition wherein a first reactive gas containing a metal element and a second reactive gas containing metal element are fed into a reaction chamber in which at least one substrate is disposed under reduced pressure and said substrate is irradiated by a light beam, so that the growth rate of a thin film containing the metal element which to be formed on the surface of the substrate can be increased with the consumption of the reactive gas containing the metal element which is less than that of the conventional methods. The flows of the reactive gases can be maintained in a laminar flow state with good controllability in the entire area of the vicinity of the substrate.