Patents by Inventor Tetsuya Ishimaru

Tetsuya Ishimaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11049965
    Abstract: A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: June 29, 2021
    Assignee: HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
    Inventors: Masaki Shiraishi, Tetsuya Ishimaru, Junichi Sakano, Mutsuhiro Mori, Shinichi Kurita
  • Patent number: 11012022
    Abstract: The object of the invention is to provide an inverter device and an electric motor device using the same to shorten a dead time. Thus, an inverter device is provided, which includes: a switching element including a control terminal and a pair of main terminals; a control circuit configured to output a control signal which indicates whether to instruct an ON state of the switching element; a decision circuit configured to output a decision signal which indicates a state of the switching element based on a voltage between the main terminals of the switching element; and a drive circuit configured to control the ON state or an OFF state of the switching element based on the control signal and the decision signal.
    Type: Grant
    Filed: May 28, 2018
    Date of Patent: May 18, 2021
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Junichi Sakano, Shinichi Kurita
  • Publication number: 20210000425
    Abstract: A sensor data correction system, includes: a standard motion mechanism unit for performing a standard motion of a wearable sensor; a determination unit calculating a relationship between first sensor data that is sensed by a first wearable sensor provided with the standard motion mechanism unit and second sensor data that is sensed by a second wearable sensor provided with the standard motion mechanism unit; and a correction unit correcting the first sensor data or the second sensor data, on the basis of the relationship that is calculated by the determination unit.
    Type: Application
    Filed: March 4, 2020
    Publication date: January 7, 2021
    Inventors: Yoshihiro WAKISAKA, Nobuyuki SUGII, Noriyuki HAGA, Tetsuya ISHIMARU, Hiroyuki YOSHIMOTO
  • Patent number: 10852209
    Abstract: A water leak sensing system includes: a plurality of sensor terminals including a sensor installed in a pipeline of a water supply network; and a computer that senses a water leak from the pipeline based on detection signal data of the plurality of sensors of the plurality of sensor terminals, and outputs a result. The pipeline is either a first pipeline not covered by a pipe covering member (PE sleeve) or a second pipeline covered by the pipe covering member. The sensor can detect a signal at a first distance from a water leak point when the water leak occurs in the first pipeline, and detect a signal at a second distance, longer than the first distance, from the water leak point when the water leak occurs in the second pipeline.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: December 1, 2020
    Assignee: HITACHI, LTD.
    Inventors: Toshiyuki Mine, Yuudai Kamada, Tetsuya Ishimaru, Kazuo Ono
  • Publication number: 20200186076
    Abstract: The object of the invention is to provide an inverter device and an electric motor device using the same to shorten a dead time. Thus, an inverter device is provided, which includes: a switching element including a control terminal and a pair of main terminals; a control circuit configured to output a control signal which indicates whether to instruct an ON state of the switching element; a decision circuit configured to output a decision signal which indicates a state of the switching element based on a voltage between the main terminals of the switching element; and a drive circuit configured to control the ON state or an OFF state of the switching element based on the control signal and the decision signal.
    Type: Application
    Filed: May 28, 2018
    Publication date: June 11, 2020
    Inventors: Tetsuya ISHIMARU, Junichi SAKANO, Shinichi KURITA
  • Publication number: 20200126447
    Abstract: An operation motion is accurately determined in an operational information management system. The system includes a motion verification portion that combines and verifies plurality of pieces of sensor information and recognizes a specific body motion, a signal determination portion that determines whether an operation content of an operator is correctly performed based on the body motion recognized by the motion verification portion, and a report portion that reports a determine result of the signal determination portion.
    Type: Application
    Filed: August 23, 2019
    Publication date: April 23, 2020
    Inventors: Hiroyuki YOSHIMOTO, Tetsuya ISHIMARU, Nobuyuki SUGII, Yoshihiro WAKISAKA, Noriyuki HAGA
  • Publication number: 20200103306
    Abstract: A water leak sensing system includes: a plurality of sensor terminals including a sensor installed in a pipeline of a water supply network; and a computer that senses a water leak from the pipeline based on detection signal data of the plurality of sensors of the plurality of sensor terminals, and outputs a result. The pipeline is either a first pipeline not covered by a pipe covering member (PE sleeve) or a second pipeline covered by the pipe covering member. The sensor can detect a signal at a first distance from a water leak point when the water leak occurs in the first pipeline, and detect a signal at a second distance, longer than the first distance, from the water leak point when the water leak occurs in the second pipeline.
    Type: Application
    Filed: August 30, 2019
    Publication date: April 2, 2020
    Inventors: Toshiyuki MINE, Yuudai KAMADA, Tetsuya ISHIMARU, Kazuo ONO
  • Patent number: 10319849
    Abstract: The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: June 11, 2019
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Junichi Sakano, Kohhei Onda
  • Patent number: 10304761
    Abstract: Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body; the lead header is connected to a second surface of the electronic circuit body; the electronic circuit body is integrally covered by resin, including a transistor circuit chip having a switching element, a control circuit chip for controlling the switching element, a drain frame, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: May 28, 2019
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Kenya Kawano, Tetsuya Ishimaru, Shinichi Kurita, Takeshi Terakawa
  • Patent number: 10205314
    Abstract: A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: February 12, 2019
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Shinichi Kurita
  • Publication number: 20190043984
    Abstract: A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
    Type: Application
    Filed: August 6, 2018
    Publication date: February 7, 2019
    Applicant: HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
    Inventors: Masaki SHIRAISHI, Tetsuya ISHIMARU, Junichi SAKANO, Mutsuhiro MORI, Shinichi KURITA
  • Patent number: 10079536
    Abstract: The rectifier includes a rectification MOSFET; a comparator having the non-inverted input terminal connected to a drain of the rectification MOSFET and the inverted input terminal connected to a source of the rectification MOSFET, and the control circuit controlling ON and OFF of the rectification MOSFET by an output of the comparator. The control circuit includes the shutoff MOSFET for performing shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator and the shutoff control circuit performing electrical shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator by turning off the shutoff MOSFET when a voltage of the drain of the rectification MOSFET is equal to or higher than a first predetermined voltage.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: September 18, 2018
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Shinichi Kurita, Takeshi Terakawa
  • Patent number: 10069436
    Abstract: A rectifier (107) includes a rectifying MOSFET (101) that performs synchronous rectification, a control circuit (106) that inputs a voltage across a pair of a positive-side main terminal TK and a negative-side main terminal TA of the rectifying MOSFET (101) to determine an ON or OFF state of the rectifying MOSFET (101) based on the inputted voltage, and a capacitor (104) that supplies power to the control circuit (106). The control circuit (106) includes a blocking circuit (105) that inputs the voltage across the pair of main terminals of the rectifying MOSFET (101), to block power supply to the control circuit (106) when the inputted voltage across the pair of main terminals is higher than or equal to a first voltage, and to unblock power supply to the control circuit (106) when the inputted voltage across the pair of main terminals is lower than the first voltage.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: September 4, 2018
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Kohhei Onda, Shinichi Kurita, Shigeru Sugayama
  • Publication number: 20180191152
    Abstract: A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.
    Type: Application
    Filed: November 21, 2017
    Publication date: July 5, 2018
    Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Shinichi Kurita
  • Patent number: 9966871
    Abstract: A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: May 8, 2018
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Kohhei Onda, Junichi Sakano, Mutsuhiro Mori
  • Patent number: 9831145
    Abstract: Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: November 28, 2017
    Assignee: Hitachi Power Semiconductor Device, Ltd.
    Inventors: Tetsuya Ishimaru, Mutsuhiro Mori, Shinichi Kurita, Shigeru Sugayama, Junichi Sakano, Kohhei Onda
  • Publication number: 20170317075
    Abstract: A diode includes an anode electrode layer; a cathode electrode layer; a buffer layer of a first conductivity type formed between the anode electrode layer and the cathode electrode layer in a region extending to a location at a distance of 30 ?m or more from the cathode electrode layer; a first semiconductor layer of the first conductivity type formed in a region between the anode electrode layer and the cathode electrode layer, and being in contact with the buffer layer of the first conductivity type; and a second semiconductor layer of a second conductivity type formed in a region between the anode electrode layer and the first semiconductor layer of the first conductivity type. The carrier concentration in the first semiconductor layer is lower than the carrier concentration in the buffer layer. The carrier concentration in the buffer layer is less than 1×1015 cm?3.
    Type: Application
    Filed: April 24, 2017
    Publication date: November 2, 2017
    Inventors: Taiga ARAI, Masatoshi WAKAGI, Tetsuya ISHIMARU, Mutsuhiro MORI
  • Publication number: 20170263516
    Abstract: Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected.
    Type: Application
    Filed: August 19, 2015
    Publication date: September 14, 2017
    Inventors: Tetsuya ISHIMARU, Mutsuhiro MORI, Shinichi KURITA, Shigeru SUGAYAMA, Junichi SAKANO, Kohhei ONDA
  • Publication number: 20170141018
    Abstract: Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged between the base and the lead; the base seat is connected to a first surface of the electronic circuit body; the lead header is connected to a second surface of the electronic circuit body; the electronic circuit body is integrally covered by resin, including a transistor circuit chip having a switching element, a control circuit chip for controlling the switching element, a drain frame, and a source frame; either one of the drain frame and the source frame, and the base are connected; and the other one of the drain frame and the source frame, and the lead are connected.
    Type: Application
    Filed: November 17, 2016
    Publication date: May 18, 2017
    Inventors: Kenya KAWANO, Tetsuya ISHIMARU, Shinichi KURITA, Takeshi TERAKAWA
  • Publication number: 20170110959
    Abstract: The rectifier includes a rectification MOSFET; a comparator having the non-inverted input terminal connected to a drain of the rectification MOSFET and the inverted input terminal connected to a source of the rectification MOSFET, and the control circuit controlling ON and OFF of the rectification MOSFET by an output of the comparator. The control circuit includes the shutoff MOSFET for performing shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator and the shutoff control circuit performing electrical shutoff between the drain of the rectification MOSFET and the non-inverted input terminal of the comparator by turning off the shutoff MOSFET when a voltage of the drain of the rectification MOSFET is equal to or higher than a first predetermined voltage.
    Type: Application
    Filed: October 19, 2016
    Publication date: April 20, 2017
    Inventors: Tetsuya ISHIMARU, Shinichi KURITA, Takeshi TERAKAWA