Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: A photoelectric conversion apparatus includes a light receiving circuit configured to convert light into an electrical signal, a readout circuit configured to read out an analog signal corresponding to the electrical signal, a ?? A/D converter configured to convert the analog signal into a digital signal, and a control circuit configured to change a gain of the photoelectric conversion apparatus in accordance with a change of a driving mode of the photoelectric conversion apparatus. The analog signal read out by the readout circuit is an analog current signal. The readout circuit includes a variable resistor on a signal path for supplying the analog current signal to the ?? A/D converter. The control circuit changes the gain of the photoelectric conversion apparatus by changing a resistance value of the variable resistor.

Abstract: The disclosed apparatus includes a plurality of differential transmitters, and a power supply circuit that supplies a power supply voltage to each of the plurality of differential transmitters. The power supply circuit includes a common circuit unit that defines the power supply voltage supplied to the plurality of differential transmitters, and a plurality of individual circuit units provided in association with the plurality of differential transmitters and each connected to the common circuit unit. Each of the plurality of individual circuit units has an output node that outputs the power supply voltage defined by the common circuit unit to a corresponding differential transmitter of the plurality of differential transmitters, and respective output nodes of the plurality of individual circuit units are connected to each other.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: A photoelectric conversion apparatus includes a first substrate including a pixel array having a plurality of pixels including a pixel configured to output a focus detection signal and a second substrate layered on the first substrate, the second substrate including an analog-to-digital (A/D) converter including a plurality of A/D conversion circuits that converts a signal output from the first substrate to a digital signal, wherein the second substrate further includes a plurality of signal processing sections configured to perform a mechanical learning process, the second substrate including a first signal processing section and a second signal processing section, wherein the plurality of A/D conversion circuits includes a plurality of different sets, wherein the first signal processing section is disposed in correspondence with one of the plurality of sets, and wherein the second signal processing section is disposed in correspondence with another of the plurality of sets.

Abstract: The disclosed apparatus includes a plurality of differential transmitters, and a power supply circuit that supplies a power supply voltage to each of the plurality of differential transmitters. The power supply circuit includes a common circuit unit that defines the power supply voltage supplied to the plurality of differential transmitters, and a plurality of individual circuit units provided in association with the plurality of differential transmitters and each connected to the common circuit unit. Each of the plurality of individual circuit units has an output node that outputs the power supply voltage defined by the common circuit unit to a corresponding differential transmitter of the plurality of differential transmitters, and respective output nodes of the plurality of individual circuit units are connected to each other.

Abstract: A photoelectric conversion apparatus includes a first substrate including a pixel array including a plurality of pixels, and a second substrate disposed in a multilayer structure on the first substrate. The photoelectric conversion apparatus further includes a machine learning unit configured to execute processing using machine learning on a signal output from the pixel array, and a signal output unit configured to output a signal corresponding to temperature. Both the machine learning unit and the signal output unit are disposed on the second substrate.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: The disclosed apparatus includes a plurality of differential transmitters, and a power supply circuit that supplies a power supply voltage to each of the plurality of differential transmitters. The power supply circuit includes a common circuit unit that defines the power supply voltage supplied to the plurality of differential transmitters, and a plurality of individual circuit units provided in association with the plurality of differential transmitters and each connected to the common circuit unit. Each of the plurality of individual circuit units has an output node that outputs the power supply voltage defined by the common circuit unit to a corresponding differential transmitter of the plurality of differential transmitters, and respective output nodes of the plurality of individual circuit units are connected to each other.

Abstract: In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: A photoelectric conversion apparatus includes a first substrate including a pixel array including a plurality of pixels, a second substrate layered on the first substrate and including an AD conversion portion including a plurality of AD conversion circuits configured to convert a signal output from the first substrate into a digital signal, wherein the second substrate further includes a plurality of signal processing units including a first signal processing unit and a second signal processing unit both configured to perform machine learning processing, wherein each of a plurality of sets includes a plurality of AD conversion circuits that differ between the plurality of sets, wherein the first signal processing unit is arranged to correspond to one of the plurality of sets, and wherein the second signal processing unit is arranged to correspond to another one of the plurality of sets.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: Since a failure related to an output from a sensor is not detected from an image signal and a failure of the sensor is not detected from an output from the sensor in a system including the sensor for abnormality detection, it is not possible to perform the abnormality detection and to indicate the abnormality to the outside of the system. An apparatus includes a pixel area including multiple pixels, multiple sensors, a processing unit that compares signals based on outputs from the multiple sensors with each other, an output unit that outputs information based on a result of comparison.

Abstract: A photoelectric conversion apparatus includes a light receiving circuit configured to convert light into an electrical signal, a readout circuit configured to read out an analog signal corresponding to the electrical signal, a ?? A/D converter configured to convert the analog signal into a digital signal, and a control circuit configured to change a gain of the photoelectric conversion apparatus in accordance with a change of a driving mode of the photoelectric conversion apparatus. The analog signal read out by the readout circuit is an analog current signal. The readout circuit includes a variable resistor on a signal path for supplying the analog current signal to the ?? A/D converter. The control circuit changes the gain of the photoelectric conversion apparatus by changing a resistance value of the variable resistor.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A photoelectric converter includes a pixel array including a plurality of pixels, a capacitive coupling amplifier configured to amplify a signal output from the pixel array, and a delta-sigma AD converter configured to convert, into a digital signal, an analog signal output from the amplifier. The amplifier is formed by a plurality of first elements including an active element and a capacitive element. The delta-sigma AD converter is formed by a plurality of second elements including an active element and a capacitive element. A breakdown voltage of at least one of the plurality of second elements forming the delta-sigma AD converter is lower than a breakdown voltage of the plurality of first elements forming the amplifier.

Abstract: A photoelectric conversion device comprising a pixel unit in which a plurality of pixels each comprising a photoelectric conversion element are arranged in a matrix, and a plurality of delta-sigma AD converters each configured to convert a signal output from the pixel unit into a digital signal, is provided. The plurality of delta-sigma AD converters are divided into at least two groups having different timings of starting AD conversion from each other when converting, into digital signals, signals output from the pixels selected out of the plurality of pixels via a common pixel control line.