Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: Dark current from a transfer transistor is suppressed and power-supply voltage in a second semiconductor substrate is lowered. A solid-state image pickup device includes a pixel array, a plurality of common output lines receiving signals read out from a plurality of pixels, a transfer scanning unit sequentially driving the plurality of transfer transistors, a signal processing unit processing the signals output to the common signal lines, and a level shift unit making amplitude of a pulse supplied to a gate of the transfer transistor larger than amplitude of a pulse supplied to a gate of a transistor constituting the signal processing unit. The pixel array and the level shift unit are arranged on a first semiconductor substrate, whereas the plurality of common output lines and the signal processing unit are arranged on a second semiconductor substrate.

Abstract: Dark current from a transfer transistor is suppressed and power-supply voltage in a second semiconductor substrate is lowered. A solid-state image pickup device includes a pixel array, a plurality of common output lines receiving signals read out from a plurality of pixels, a transfer scanning unit sequentially driving the plurality of transfer transistors, a signal processing unit processing the signals output to the common signal lines, and a level shift unit making amplitude of a pulse supplied to a gate of the transfer transistor larger than amplitude of a pulse supplied to a gate of a transistor constituting the signal processing unit. The pixel array and the level shift unit are arranged on a first semiconductor substrate, whereas the plurality of common output lines and the signal processing unit are arranged on a second semiconductor substrate.

Abstract: First processing of causing a hold unit to hold a first signal from an amplification unit based on reset of the amplification unit, second processing of performing AD conversion of the held first signal and outputting a second signal obtained by superposing a signal based on charges generated in a photoelectric conversion unit of a first-row pixel on the first signal, third processing of performing an operation of performing AD conversion of the held second signal and an operation of resetting the amplification unit at least partly in parallel, and fourth processing of causing the hold unit to hold a fourth signal obtained by superposing a signal based on charges generated in the photoelectric conversion unit of a second-row pixel on a third signal from the amplification unit based on resetting of the amplification unit and is output from the amplification unit are performed.

Abstract: A solid-state imaging device includes a pixel that outputs a pixel signal of an analog signal, a readout unit that converts the pixel signal into a digital signal to generate a digital pixel signal, a memory unit that stores the digital pixel signal, and a first inspection signal output unit that outputs a first inspection signal to the memory unit such that the memory unit stores the first inspection signal. The first inspection signal stored in the memory unit is output from the memory unit in a period after output of the digital pixel signal of a frame ends and before output of the digital pixel signal of a next frame starts.

Abstract: A disclosed embodiment includes a first pixel including a photoelectric converter and a first transistor that transfers charges generated in the photoelectric converter to a first node, wherein the first pixel outputs a first signal based on a voltage of the first node, a second pixel including a second transistor that supplies a constant voltage to a second node, wherein the second pixel outputs a second signal based on a voltage of the second node, and a control line connected to the first transistor and the second transistor, wherein a capacitance value of a capacitance component coupled to the second node is greater than a capacitance value of a capacitance component coupled to the first node.

Abstract: An image sensor comprises a pixel portion formed by arraying pixels including photoelectric conversion portions in a matrix, a plurality of A/D converters which are provided in a one-to-one correspondence to pixel columns of the pixel portion, an adding unit which adds pixel signals from a plurality of pixel columns to each other, and a connecting portion capable of inputting, to an arbitrary A/D converter, a sum signal obtained by adding the pixel signals by the adding unit.

Abstract: Provided is an imaging device including a pixel array including pixels; a readout circuit that reads out signals from the pixels; a temperature sensor that outputs a signal in accordance with a temperature; and a current control circuit that controls a current supplied to the temperature sensor. The current control circuit performs control in a first period such that a predetermined current is supplied to the temperature sensor, and performs control in a second period such that a current supplied to the temperature sensor becomes smaller than the predetermined current or stops. The first period is set in a first blanking period between a process in which the first readout circuit reads out one frame of signals output from the pixels and a process in which the first readout circuit reads out next one frame of signals output from the pixels.

Abstract: An image pickup device according to an embodiment includes pixels each configured to output an analog signal based on electric charges produced in a photoelectric conversion unit and a control unit configured to control a gain applied to the analog signal to be at least a first gain and a second gain greater than the first gain in accordance with a signal value of the analog signal. Each of the pixels outputs, as the analog signal, a first signal and a second signal based on electric charges produced in the photoelectric conversion unit in a first exposure period and a second exposure period shorter than the first exposure period. The control unit controls the gain applied to the analog signal by selecting one from the first gain and the second gain in accordance with the signal value, for at least one of the first signal and the second signal.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A solid-state imaging device includes a first detection pixel and a second detection pixel, each of the first detection pixel and the second detection pixel including a transfer transistor and an amplifier transistor connected to the transfer transistor via a first node, a voltage supply unit that supplies a predetermined voltage, and a connection switch connected between the voltage supply unit and a second node at which the transfer transistor of the first detection pixel and the transfer transistor of the second detection pixel are connected.

Abstract: An image capturing apparatus includes a plurality of pixels arranged on a substrate, a temperature signal output unit arranged on the substrate and configured to output a temperature signal representing a temperature, and a reference signal output unit arranged on the substrate and configured to output a reference signal used to correct the temperature signal. The temperature signal output unit and the reference signal output unit are arranged in regions different from each other on the substrate.

Abstract: A driving method for an image pickup apparatus includes accumulating a signal generated during a first charge accumulation period by a first sub pixel, accumulating a signal generated during a second charge accumulation period partially overlapped with the first charge accumulation period by a second sub pixel, and controlling column circuits such that, after processing of the signal generated during the first charge accumulation period is performed, processing of the signal is performed which is generated during the second charge accumulation period of the second sub pixel included in the pixel where the signal processing of the first sub pixel is performed, and the column circuits are put into a non-operating state during at least part of a period after the processing of the signal generated during the first charge accumulation period is ended until the second charge accumulation period is ended.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: An image pickup apparatus includes a plurality of pixels arranged in rows and columns, a plurality of comparators, each of the comparators including a switch for controlling an operation, a signal line which is provided commonly to the switches of the plurality of comparators and through which a control signal for controlling the switches of the plurality of comparators is supplied, a control signal generation unit, and a signal line control unit configured to control an electric potential of the signal line to be set as a fixed electric potential.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.