Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and the filtering device has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion, in which the filter A is a porous membrane containing a polyimide-based resin.

Abstract: An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent, and metal-containing particles containing a metal atom, in which the number of metal nanoparticles contained in the metal-containing particles and having a particle size of 0.5 to 17 nm is 1.0×101 to 1.0×109 particles/cm3, based on the number of the particles per unit volume of the liquid chemical.

Abstract: An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent; Fe nanoparticles containing a Fe atom and having a particle size of 0.5 to 17 nm; and Pb nanoparticles containing a Pb atom and having a particle size of 0.5 to 17 nm, in which a ratio of the number of the Fe nanoparticles contained to the number of the Pb nanoparticles contained is 1.0 to 1.0×104, based on the number of the particles per unit volume of the liquid chemical.

Abstract: An object of the present invention is to provide a semiconductor treatment liquid which has excellent anticorrosion properties against at least one metal selected from the group consisting of Cu and Co in a case of being brought into contact with an object containing, and in which defects are less likely to remain on a surface of the object to be treated after the object to be treated is subjected to water cleaning; a treatment method for an object to be treated; and a manufacturing method of an electronic device. The semiconductor treatment liquid of the present invention contains at least one purine compound selected from the group consisting of purine and a purine derivative, at least one specific compound selected from the group consisting of an organic sulfonic acid compound having 10 or less carbon atoms, sulfuric acid, and a salt of these compounds, and water, in which a pH is more than 7.0.

Abstract: An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25° C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

Abstract: The present invention provides a chemical liquid demonstrating excellent defect inhibition performance in a case where the chemical liquid is used as a prewet solution. The present invention also provides a resist pattern forming method, a semiconductor chip manufacturing method, a chemical liquid storage body, and a chemical liquid manufacturing method. The chemical liquid according to an embodiment of the present invention is a chemical liquid to be used as a prewet solution and contains cyclohexanone and one or more kinds of first compounds selected from the group consisting of a compound represented by General Formula (1), a compound represented by General Formula (2), and a compound represented by General Formula (3), in which a content of the cyclohexanone is 98.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a total content of the first compounds is 0.001 to 100 ppm by mass with respect to the total mass of the chemical liquid.

Abstract: The present invention provides a member which makes is possible to obtain excellent residue defect inhibition properties and excellent bridge defect inhibition properties of a chemical liquid in a case where the member is brought into contact with the chemical liquid. The present invention also provides a container, a chemical liquid storage body, a reactor, a distillation column, a filter unit, a storage tank, a pipe line, and a chemical liquid manufacturing method. The member according to an embodiment of the present invention is a member that will be brought into contact with a chemical liquid. A surface of the member is constituted with stainless steel containing chromium atoms and iron atoms. In a case where an atomic ratio of the chromium atoms to the iron atoms is measured from the surface of the member to a position 10 nm below the surface in a depth direction, a maximum value of the atomic ratio is found in a region extending 3 nm from the surface of the member in the depth direction.

Abstract: It is an object of the invention to provide a chemical solution that ensures good in-plane cleanliness uniformity on a substrate and good wafer bevel cleanliness and exhibits high capability of preventing the occurrence of defects on the substrate upon contact with the substrate. It is another object of the invention to provide a chemical solution-housing article that houses the chemical solution. The chemical solution of the invention contains 2-heptanone, water, and a carbonyl compound having 6 to 8 carbon atoms other than 2-heptanone. The content of 2-heptanone is 60% by mass or more based on the total mass of the chemical solution, and the content of water is 1 to 1000 ppm by mass based on the total mass of the chemical solution. A P value determined from formula (1) is 3 to 10. P=?log10 (X×Y) formula (1).

Abstract: An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent; Fe nanoparticles containing a Fe atom and having a particle size of 0.5 to 17 nm; and Pb nanoparticles containing a Pb atom and having a particle size of 0.5 to 17 nm, in which a ratio of the number of the Fe nanoparticles contained to the number of the Pb nanoparticles contained is 1.0 to 1.0×104, based on the number of the particles per unit volume of the liquid chemical.

Abstract: A pattern forming method including a pre-wetting step of coating a substrate with a chemical liquid so as to obtain a pre-wetted substrate; a resist film forming step of forming a resist film on the pre-wetted substrate by using an actinic ray-sensitive or radiation-sensitive resin composition; an exposure step of exposing the resist film; and a development step of developing the exposed resist film by using a developer, wherein the chemical liquid of the present invention contains a mixture of two or more kinds of designated organic solvents, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains a resin including at least one kind of repeating unit selected from the group consisting of a repeating unit represented by Formula (a), a repeating unit represented by Formula (b), a repeating unit represented by Formula (c), a repeating unit represented by Formula (d), and a repeating unit represented by Formula (e).

Abstract: A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10?12 to 10?4.

Abstract: An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

Abstract: The present invention provides a treatment liquid which is excellent in anticorrosion properties for molybdenum and excellent in defect removability on an object to be treated, in a case of being applied to cleaning of the object to be treated, which contains a molybdenum-containing substance and has been subjected to chemical mechanical polishing treatment. In addition, the present invention provides a cleaning method for an object to be treated, using the above-described treatment liquid, and a method for manufacturing an electronic device. The treatment liquid of the present invention is used for cleaning an object to be treated, which contains a molybdenum-containing substance and has been subjected to chemical mechanical polishing, the treatment liquid containing a polymer having a sulfonic acid group or a salt thereof, and water.

Abstract: It is an object of the invention to provide a treatment liquid that, when used as a developer or a rinsing liquid for a metal resist film, exhibits a high ability to suppress the occurrence of pattern defects and also exhibits a high pattern resolution. The treatment liquid of the invention is a treatment liquid containing propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and acetic acid. The content of propylene glycol monomethyl ether acetate is 60% by mass or more based on the total mass of the treatment liquid, and the content of propylene glycol monomethyl ether is 0.00010 to 0.1% by mass based on the total mass of the treatment liquid. The content of acetic acid is 1.0% by mass or more and less than 40.0% by mass based on the total mass of the treatment liquid.

Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

Abstract: It is an object of the present invention to provide a chemical solution that, when applied to an object to be treated, can suppress the occurrence of defects containing alkali metals and defects containing boron after the application to the object to be treated and that, when used as a washing solution for pipes, can suppress the occurrence of particle defects on the surface of a substrate supplied with a composition through the washed pipes. The chemical solution of the invention is a chemical solution containing propylene glycol monomethyl ether acetate and boron atoms. The content of propylene glycol monomethyl ether acetate is 80% by mass or more based on the total mass of the chemical solution, and the content of boron atoms is 0.001 to 100 ppt by mass based on the total mass of the chemical solution.

Abstract: A polishing liquid which reduces the occurrence of erosion and scratches on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished is provided. In addition, a chemical mechanical polishing method using the above-mentioned polishing liquid is provided. The polishing liquid is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film. The polishing liquid includes colloidal silica, an organic acid, a specific nitrogen-containing aromatic heterocyclic compound and hydrogen peroxide, and has a pH of 8.5 to 12.

Abstract: It is an object of the invention to provide a treatment liquid that, when used as a developer or a rinsing liquid for a metal resist, exhibits a high ability to suppress the occurrence of pattern defects and a high pattern resolution and exhibits a high ability to suppress the occurrence of defects originating from the treatment liquid even after storage under cyclic heating and cooling and a high pattern resolution even after storage under cyclic heating and cooling, to provide a treatment liquid-housing article that houses the treatment liquid, and to provide a pattern forming method and an electronic device production method that use the treatment liquid. The treatment liquid of the invention is a treatment liquid containing propylene glycol monomethyl ether acetate, water, and an organic acid.

Abstract: An object of the present invention is to provide a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes a lithography step, an etching step, and an ion implantation step, wherein at least one of a treatment liquid for manufacturing a semiconductor device used at the end of each step or before moving to the next step includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and wherein a total content of particulate metal comprising at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing a semiconductor.

Abstract: It is an object of the present invention to provide a chemical solution that, when used as a developer or a rinsing liquid for a metal resist film, exhibits a high ability to suppress the occurrence of defects originating from alkali metal elements and/or alkaline-earth metals and the occurrence of defects originating from boron atoms and also exhibits a high pattern resolution. It is another object of the invention to provide a chemical solution-housing article that houses the chemical solution. The chemical solution of the invention is a chemical solution containing propylene glycol monomethyl ether acetate and an organic acid. The content of the organic acid is 1% by mass or more and less than 40% by mass based on the total mass of the chemical solution, and the content of boron atoms is 0.001 to 100 ppt by mass based on the total mass of the chemical solution.