Abstract: An object of the present invention is to provide a semiconductor treatment liquid which has excellent anticorrosion properties against at least one metal selected from the group consisting of Cu and Co in a case of being brought into contact with an object containing the metal, and also has excellent cleanability for organic residues on a surface of the object to be treated; and to provide a treatment method for an object to be treated and a manufacturing method of an electronic device. The treatment liquid of the present invention contains a purine compound and an amine compound, in which the purine compound includes at least one selected from the group consisting of purine and a purine derivative, the amine compound includes at least two of one amine compound A and one or two or more amine compounds B different from the amine compound A, the amine compound A is a tertiary amine compound, and a mass ratio of a content of the purine compound to a content of the amine compound is 0.0001 to 0.1.

Abstract: An object is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by KrF excimer laser exposure and ArF excimer laser exposure. Another object is to provide a method for analyzing a test target solution and a method for producing a liquid chemical. A liquid chemical includes an organic solvent; and metal-containing particles containing a metal atom and having a particle size of 10 to 100 nm, in which the number of the metal-containing particles contained is 1.0×10?2 to 1.0×1012 particles/cm3.

Abstract: An object of the present invention is to provide a treatment liquid having excellent resist film removal performance and excellent residue removal performance. Another object of the present invention is to provide a treatment method. The treatment liquid of an embodiment of the present invention is a treatment liquid containing an alkali compound and a hydroxycarboxylic acid, in which abrasive particles are not substantially contained, and a content mass ratio of a content of the hydroxycarboxylic acid to a content of the alkali compound is 0.001 and 1.0.

Abstract: An object of the present invention is to provide a solution which is excellent in both the temporal stability of an organic solvent and the defect inhibition properties. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing an organic solvent and a stabilizer, in which a content of the stabilizer with respect to a total mass of the solution is 0.1 to 50 mass ppm.

Abstract: An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.

Abstract: The present invention provides a chemical liquid which makes it possible to obtain a resist pattern while inhibiting pattern interval variation in a case where the chemical liquid is used as a developer or rinsing solution. The present invention also provides a chemical liquid storage body, a resist pattern forming method, and a semiconductor chip manufacturing method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing n-butyl acetate and isobutyl acetate, in which a content of the n-butyl acetate is 99.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a content of the isobutyl acetate is 1.0 to 1,000 mass ppm with respect to the total mass of the chemical liquid.

Abstract: An object of the present invention is to provide a solution which contains an organic solvent as a main component (content: equal to or greater than 98% by mass) and has an excellent defect inhibition ability. Another object of the present invention is to provide a solution storage body storing the solution, an actinic ray-sensitive or radiation-sensitive resin composition containing the solution, and a pattern forming method and a manufacturing method of a semiconductor device using the solution. The solution of the present invention is a solution containing at least one kind of organic solvent having a boiling point lower than 200° C. and an organic impurity having a boiling point equal to or higher than 250° C., in which a content of the organic solvent with respect to a total mass of the solution is equal to or greater than 98% by mass, and a content of the organic impurity with respect to the total mass of the solution is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

Abstract: An object of the present invention is to provide a resist pattern forming method that has excellent pattern forming properties and generates few residues and a semiconductor chip manufacturing method. The resist pattern forming method according to an embodiment of the present invention has a step A of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing a photoacid generator and a resin whose polarity is increased by the action of an acid, a step B of exposing the film, step C of developing the exposed film by using an alkali developer, a step D of washing the developed film by using water, and a step E of washing the film washed in the step D by using a chemical liquid containing an alcohol-based solvent, in which the alkali developer contains a quaternary ammonium salt.

Abstract: An object of the present invention is to provide a chemical solution that, in the case of being used in a step of bringing a contact-target member and the chemical solution into contact with each other, is less likely to cause a predetermined defect in the contact-target member. A chemical solution according to the present invention includes an organic solvent and a metal-containing particle including a metal element selected from the group consisting of Fe, Ni, and Zn, wherein an I value determined by a method X is 0.010 to 10.

Abstract: The present invention provides a composition that suppresses the occurrence of defects in an object to be applied, even in a case of being used after a predetermined period of time has elapsed from the production. In addition, the present invention provides a manufacturing method for a semiconductor element and a cleaning method for a semiconductor substrate. The composition according to the present invention is a composition containing an antibacterial agent, an organic acid, an organic amine, and water, in which a content of the water is 70% by mass or more with respect to a total mass of the composition, and a pH at 25° C. is 4.0 to 9.0.

Abstract: An object of the present invention is to provide a cleaning composition that suppresses a surface roughness of a region including Mo and has excellent removability of Mo-based residues in a case of being used in a treatment of an Mo-containing substrate. The cleaning composition of an embodiment of the present invention is a cleaning composition used in a treatment of a molybdenum-containing substrate, the cleaning composition including an organic acid and organic amine compounds having at least one group selected from the group consisting of a primary amino group, a secondary amino group, and a tertiary amino group, in which the cleaning composition includes two or more kinds of the organic amine compounds.

Abstract: A management method of managing a purity of a chemical liquid containing an organic solvent by sensing impurities in the chemical liquid. The management method includes Step 1 of preparing a target chemical liquid containing an organic solvent; Step 2 of bringing the target chemical liquid into contact with a crystal oscillator sensor including an adsorption layer that adsorbs the impurities and a crystal oscillator and obtaining an amount of change in a resonance frequency of the crystal oscillator resulting from contact of the target chemical liquid; and Step 3 of managing the purity of the chemical liquid by comparing whether or not the obtained amount of change falls within a permissible range based on a preset purity of the target chemical liquid. In Step 2, at least a part of a liquid contact portion coming into contact with the target chemical liquid is made of a fluorine-based resin.

Abstract: An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.

Abstract: A filtering device is used for obtaining a chemical liquid by purifying a liquid to be purified and includes an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path that includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion. The filter A has a porous membrane made of ultra-high-molecular-weight polyethylene and a resin layer disposed to cover at least a portion of the surface of the porous membrane, and the resin layer includes a resin having a neutral group or an ion exchange group.

Abstract: An object of the present invention is to provide a cleaning composition and a cleaning method of a semiconductor substrate, in which suppression property of surface roughness of a metal part in a substrate is excellent, removability of organic residues is excellent, and removability of inorganic residues is excellent. The cleaning composition of the present invention is a cleaning composition used for cleaning a substrate which has been subjected to a chemical mechanical polishing treatment, the cleaning composition containing an amine compound, an anticorrosion agent, an organic solvent, and water, in which the amine compound includes at least one compound X selected from the group consisting of a tertiary amine compound in which a pKa of a conjugate acid is 8.0 or more and a quaternary ammonium salt compound containing a quaternary ammonium cation having a total number of carbon atoms of 5 or more.

Abstract: An object of the present invention is to provide a composition in which, even in a case of being used after a lapse of a predetermined period from production, removal performance of residues and anticorrosion properties of a tungsten-containing film are excellent, and deterioration of electrical properties of the tungsten-containing film can be suppressed; and to provide a manufacturing method of a semiconductor element. The composition of the present invention contains sorbic acid, citric acid, an amine-containing compound which is at least one selected from the group consisting of ammonia, an organic amine, a quaternary ammonium compound, and salts thereof, a specific compound which has at least one group selected from the group consisting of a phosphono group and a phosphoric acid group, and water, in which a pH at 25° C. is 4.0 to 9.0.

Abstract: An object of the present invention is to provide a polishing liquid that has a high polishing rate and exhibits a small variation in polishing rate in a case where polishing is carried out using the polishing liquid. The polishing liquid of the present invention is a polishing liquid for use in chemical mechanical polishing, containing colloidal silica, an organic acid having at least a phosphonic acid group or a salt thereof in a molecular structure, hypophosphorous acid, and water.

Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

Abstract: The present invention provides a polishing liquid which reduces the occurrence of dishing and erosion on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, and includes a colloidal silica, an organic acid, a passivation film forming agent, an anionic surfactant; hydrogen peroxide; potassium; and sodium, in which a value of a difference obtained by subtracting the ClogP value of the passivation film forming agent from the ClogP value of the anionic surfactant is more than 2.00 and less than 8.

Abstract: A container has a base material and a coating layer which is disposed on at least a portion of the base material, contains a composition containing at least one kind of metal component selected from the group consisting of Ti, Al, Mg, Zr, Hf, Fe, Ni, Sn, Zn, Cr, and Mo, and has a thickness equal to or greater than 50 ?m. In a case where the composition contains one kind of metal component, a ratio RCAs calculated by CA1s/CA2s is less than 1.0. Alternatively, in a case where the composition contains two or more kinds of metal components, in at least a portion of the coating layer, an average of RCAs determined for each of two or more kinds of the metal components is less than 1.0.