Abstract: An object of the present invention is to provide a polishing liquid that has a high polishing rate and exhibits a small variation in polishing rate in a case where polishing is carried out using the polishing liquid. The polishing liquid of the present invention is a polishing liquid for use in chemical mechanical polishing, containing colloidal silica, an organic acid having at least a phosphonic acid group or a salt thereof in a molecular structure, hypophosphorous acid, and water.

Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

Abstract: The present invention provides a polishing liquid which reduces the occurrence of dishing and erosion on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, and includes a colloidal silica, an organic acid, a passivation film forming agent, an anionic surfactant; hydrogen peroxide; potassium; and sodium, in which a value of a difference obtained by subtracting the ClogP value of the passivation film forming agent from the ClogP value of the anionic surfactant is more than 2.00 and less than 8.

Abstract: A container has a base material and a coating layer which is disposed on at least a portion of the base material, contains a composition containing at least one kind of metal component selected from the group consisting of Ti, Al, Mg, Zr, Hf, Fe, Ni, Sn, Zn, Cr, and Mo, and has a thickness equal to or greater than 50 ?m. In a case where the composition contains one kind of metal component, a ratio RCAs calculated by CA1s/CA2s is less than 1.0. Alternatively, in a case where the composition contains two or more kinds of metal components, in at least a portion of the coating layer, an average of RCAs determined for each of two or more kinds of the metal components is less than 1.0.

Abstract: A pattern forming method including forming a film using an actinic ray-sensitive or radiation-sensitive resin composition; exposing the formed film; and treating the exposed film using a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent storage stability, excellent anticorrosion properties of tungsten, and excellent cleanability for a semiconductor substrate having tungsten after a CMP treatment. The treatment liquid for a semiconductor substrate according to an embodiment of the present invention includes an amphoteric compound, an antimicrobial agent, and an amino alcohol, in which the amphoteric compound includes an acid group having a pKa of less than 4.5 and a basic group having a pKa of more than 4.5, and the number of the basic groups is larger than the number of the acid groups.

Abstract: Provided are an analysis method of a photosensitive composition, with which a trace amount of metal atoms contained in the photosensitive composition can be easily detected, a production method of a photosensitive composition, and a manufacturing method of an electronic device. The analysis method of a photosensitive composition includes a step 1 of applying a photosensitive composition onto a substrate to form a coating film, a step 2 of removing the coating film from the substrate without exposing the coating film to obtain a coating film-removed substrate, and a step 3 of measuring the number of metal atoms per unit area on the coating film-removed substrate by a total reflection X-ray fluorescence analysis method to obtain a measured value.

Abstract: The chemical liquid storage includes a container and a chemical liquid, wherein the chemical liquid contains at least one of Fe, Al, Cr, and Ni, a content of the specific metal component in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 100 mass ppt, at least a portion of a liquid contact portion of the container is formed of glass containing sodium atoms, and provided that B represents a content of sodium atoms in a bulk region with respect to a total mass of the bulk region, and A represents a content of sodium atoms in a surface region with respect to a total mass of the surface region, a content mass ratio of A to B represented by A/B is higher than 0.10 and less than 1.0 in at least a portion of the liquid contact portion.

Abstract: A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10?12 to 10?4.

Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

Abstract: The present invention provides a cleaning composition having excellent storage stability, a cleaning method of a semiconductor substrate, and a manufacturing method of a semiconductor element. The cleaning composition of the present invention contains a polycarboxylic acid, a chelating agent, a sulfonic acid having an alkyl group having 9 to 18 carbon atoms, and water, in which a mass ratio of the polycarboxylic acid to the chelating agent is 10 to 200, a mass ratio of the polycarboxylic acid to the sulfonic acid is 70 to 1,000, a pH is 0.10 to 4.00, and an electrical conductivity is 0.08 to 11.00 mS/cm.

Abstract: A method for manufacturing an electronic device, the method including performing a treatment using a treatment liquid for manufacturing a semiconductor, the treatment liquid for manufacturing a semiconductor includes: a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; water; and one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A ratio T1 of a total mass of the metal atoms to the sum of a total mass of the additive and the total mass of the metal atoms is in a range from 1 ppt to 1 ppm.

Abstract: An object of the present invention is to provide a composition that exhibits excellent dissolving ability and etching selectivity (particularly, etching selectivity for a Ru-containing substance and other metal-containing substances) to metal-containing substances (particularly, a Ru-containing substance), a kit for preparing the composition, and a method for treating a substrate by using the composition. The composition according to an embodiment of the present invention is a composition for removing metal-containing substances, and contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, an azole compound, and an alkali compound.

Abstract: The present invention provides a polishing liquid which has a good polishing speed and reduces the occurrence of dishing on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid.

Abstract: An object of the present invention is to provide a chemical liquid having excellent defect inhibition performance and a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent that has a conductivity equal to or lower than 10?5 S/m at 25° C., and a compound represented by General Formula (I), in which a content of the compound represented by General Formula (I) with respect to the total mass of the chemical liquid is 0.10 mass ppt to 100,000 mass ppt.

Abstract: The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal.

Abstract: An object of the present invention is to provide a chemical liquid storage body which hardly causes short and defects in a formed wiring board in a case where a chemical liquid stored in the chemical liquid storage body is used in a wiring forming process including photolithography after the chemical liquid storage body is preserved for a certain period of time.

Abstract: A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10?12 to 10?4.

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.