Abstract: A network communication device is provided with e-mail message composing means and e-mail message transmitting/receiving means. The e-mail message composing means has functions of incorporating an MDN request and return transmission conditions into an e-mail message and of consolidating MDN responses for multiple received e-mail messages into a collective MDN response to compose a single e-mail message. The e-mail message transmitting/receiving means has a function of recognizing the MDN request and the return transmission conditions.

Abstract: The memory apparatus includes a memory device including a gate insulating layer formed on a silicon substrate by sequentially stacking a tunnel oxide layer, a charge trap layer, and a block oxide layer in this order, on the silicon substrate. In addition, a gate electrode is formed on the gate insulating layer. The block oxide layer is formed by stacking a first block oxide layer and a second block oxide layer, wherein the first block oxide layer is adjacent to the charge trap layer and the second block oxide layer is adjacent to the gate electrode. The second block oxide layer is formed of a dielectric material having higher permittivity than that of the first block oxide layer and having higher electron affinity than that of the first block oxide layer.

Abstract: A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.

Abstract: A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.

Abstract: The present invention provides an information processing device that comprises an information storage section for storing device setting information of the information processing device and a program for bringing the information processing device into operation; a firmware version judgment section for comparing, upon reception of updating data that includes device setting information and version information, the version information of a program contained in the updating data and version information of the program stored in the storage section; wherein: an upgrading judgment section brings the acquirement section into operation to obtain a program corresponding to the version information of a program contained in the updating data so as to update the program stored in the storage section and the device setting information when the version information of a program contained in the updating data and the version information of the program stored in the storage section are not identical, and updates the device set

Abstract: An antenna apparatus includes an antenna block and a substrate. The antenna block has a base that is made of a substantially cuboid dielectric body, an upper-surface conductor formed on an upper surface of the base, first and second pad electrodes that are formed on both ends of a bottom surface of the base in a longitudinal direction of the base, respectively, and a lateral-surface conductor connecting the upper-surface conductor and the second pad electrode. The substrate has a region mounting the antenna block, a ground pattern provided around the mounting region, first and second lands that are provided within the mounting region so as to correspond to the positions of the first and second pad electrodes, a feed line that is connected to the first land, an impedance-adjusting pattern connecting the first land and the ground pattern, and a frequency-adjusting pattern connecting the second land and the ground pattern.

Abstract: A method for removing a metal impurity from a quartz component part in a heat processing apparatus of a batch type includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product target substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.

Abstract: A data transmission system is provided that enables a user to move away before the completion of data transmission regardless of whether a refund is made in association with occurrence of a communication error when a data transmitting apparatus performs data transmission and collects a consideration. The data transmitting apparatus includes a consideration receiving portion that receives a consideration of FAX data transmission, a report destination input portion that inputs a report destination of a user, and a FAX transmission error detecting portion that detects a communication error at the time of the FAX data transmission. In case the FAX transmission error detecting portion detects a communication error, the system including the data transmitting apparatus transmits refund information for refunding the consideration of the FAX data transmission with the communication error to the report destination input through the report destination input portion.

Abstract: A multifunctional device extracts identification information items from received device-cloning file data items and determines whether a data restoration process is a backup process or a cloning process based on whether or not a serial number in the identification information items is identical with a serial number in a multifunctional device having received the device-cloning file data items. In the backup process, specific information items and general information items are restored. In the cloning process, only general information items are restored.

Abstract: A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.

Abstract: A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.

Abstract: A network communication device measures an elapsed time from the transmission of facsimile data prepared by an e-mail message composing section to the reception of a delivery verification response by a clock section. In accordance with the measurement, a time managing section changes a waiting time by which an occurrence of a timeout error is determined to, for example, a mean value or a maximum value. This sets the waiting time to an optimal value suitable to a network environment, for example.

Abstract: The present invention provides a pre-expanded particulate polyolefin-based resin capable of easily attaining satisfactory secondary expandability, satisfactory surface appearance, and satisfactory dimensional stability even when it is intended to obtain an in-mold expansion molded article having a thin-wall shape. The present invention provides a pre-expanded particulate polypropylene-based resin including a polypropylene-based resin X as a base resin, where the resin X includes a resin mixture of at least a polypropylene-based resin A having a melting point of 140° C. or lower and a polypropylene-based resin B having a melting point of 145° C. or higher, and the resin mixture is modified by an organic peroxide so as to have a melt index of 5 g/10 min or more and less than 20 g/10 min.

Abstract: The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 ?m depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.

Abstract: The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 ?m depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.

Abstract: A multifunctional device extracts identification information items from received device-cloning file data items and determines whether a data restoration process is a backup process or a cloning process based on whether or not a serial number in the identification information items is identical with a serial number in a multifunctional device having received the device-cloning file data items. In the backup process, specific information items and general information items are restored. In the cloning process, only general information items are restored.

Abstract: A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.

Abstract: A communication system serving as a transmitter terminal and a receiver terminal for communications with a second communication system via a communication line, the communication system includes a storage section for data storage; a communication section for data communications, the communication section being adapted for reception and transmission of data and size information indicative of the size of the data with respect to the second communication system; a detection section for detecting a free space in the storage section; a comparing section for comparing the data size contained in the size information with the size of the free space in the storage section; a calculating section for, if the storage section is short of free space for accommodation of the data size, calculating a waiting period required for recovery from the shortage of the free space in the storage section; and a timer section for timing the lapse of the waiting period.

Abstract: XML descriptive commands corresponding to an application of another device utilized on network can be easily generated. A digital multifunctional device is an embodiment of an image processing apparatus and is connected to network devices, such as a FAX server and a document server, via the network. The digital multifunctional device obtains a registered schema corresponding to an application of another network device such as a FAX server. When another network device is utilized, commands described in the XML is generated by using the obtained schema, and the commands are transmitted to appropriate network device along with image data to be processed. The network device receiving the image data and the commands executes predetermined processing in accordance with the commands.

Abstract: The present invention provides an information processing device that comprises an information storage section for storing device setting information of the information processing device and a program for bringing the information processing device into operation; a firmware version judgment section for comparing, upon reception of updating data that includes device setting information and version information, the version information of a program contained in the updating data and version information of the program stored in the storage section; wherein: an upgrading judgment section brings the acquirement section into operation to obtain a program corresponding to the version information of a program contained in the updating data so as to update the program stored in the storage section and the device setting information when the version information of a program contained in the updating data and the version information of the program stored in the storage section are not identical, and updates the device set