Abstract: A magnetic field sensor includes: a first magnetoresistance effect element; a second magnetoresistance effect element; an output port; a signal line; and a first input terminal configured to be capable of applying a DC current or a DC voltage to the first magnetoresistance effect element. Each of the first magnetoresistance effect element and the second magnetoresistance effect element includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed therebetween, the first magnetoresistance effect element and the second magnetoresistance effect element are connected through the signal line, and the output port is connected in parallel with the second magnetoresistance effect element.

Abstract: A substrate processing apparatus includes: a spin base rotatable in a horizontal plane about a centered rotary axis; a holder to hold a substrate above the spin base; a lower surface processing unit to discharge a processing liquid toward a lower surface of the substrate held by the holder. The holder includes: a plurality of first abutting members that abut the substrate from a position obliquely below said substrate and that hold the substrate in a horizontal posture in a position spaced from an upper surface of said spin base; a plurality of second abutting members that abut the substrate from a position lateral to said substrate and that hold said substrate in a horizontal posture in a position spaced from the upper surface of said spin base.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.

Abstract: A high-frequency filter includes at least one magnetoresistive effect element; a first port through which a high-frequency signal is input; a second port through which a high-frequency signal is output; and a signal line.

Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.

Abstract: Disclosed herein is a patch antenna that includes a first dielectric layer in which a patch conductor is provided, a second dielectric layer in which a signal line extending in a direction parallel to the patch conductor is provided, a feed conductor provided perpendicularly to the patch conductor so as to connect one end of the signal line and a feed point for the patch conductor, a first ground pattern provided between the patch conductor and the signal line, and a second ground pattern provided on an opposite side to the first ground pattern with respect to the signal line. The first dielectric layer has a dielectric constant lower than that of the second dielectric layer.

Abstract: Disclosed herein is a dual band patch antenna that includes a first feeding part, first and second radiation conductors, a first feeding conductor having one end connected to the first feeding part and other end connected to the first radiation conductor, a second feeding conductor having one end connected to the first feeding part and other end connected to the second radiation conductor, a first open stub having one end connected to the first feeding conductor and other end opened, and a second open stub having one end connected to the second feeding conductor and other end opened.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A magnetic field sensor includes: a first magnetoresistance effect element; a second magnetoresistance effect element; an output port; a signal line; and a first input terminal configured to be capable of applying a DC current or a DC voltage to the first magnetoresistance effect element. Each of the first magnetoresistance effect element and the second magnetoresistance effect element includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed therebetween, the first magnetoresistance effect element and the second magnetoresistance effect element are connected through the signal line, and the output port is connected in parallel with the second magnetoresistance effect element.

Abstract: Magnetoresistive effect device including magnetoresistive effect element which high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including magnetization fixed, spacer, and magnetization free layer wherein magnetization direction is changeable; first and second ports; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. Closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed. Magnetoresistive effect element is arranged wherein direct current input from direct-current input terminal flows through magnetoresistive effect element in direction from magnetization fixed layer to magnetization free layer.

Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.

Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.

Abstract: Disclosed herein is an antenna device that includes a substrate, an IC chip mounted on the substrate, a first antenna element including a plurality of patch antenna conductors that is supplied with power from the IC chip and that radiates a beam in a direction substantially perpendicular to the substrate, and a second antenna element that is supplied with power from the IC chip and that radiates a beam in a first horizontal direction substantially parallel to the substrate.

Abstract: A high-frequency filter includes at least one magnetoresistive effect element; a first port through which a high-frequency signal is input; a second port through which a high-frequency signal is output; and a signal line.

Abstract: A magnetoresistive effect device includes a magnetoresistive effect element first and second ports, a signal line, an inductor, and a direct current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The inductor is connected to one of the signal line between the magnetoresistive effect element and the first port and the signal line between the magnetoresistive effect element and the second port and is capable of being connected to ground. The direct-current input terminal is connected to the other of the above signal lines. A closed circuit including the magnetoresistive effect element, the signal line, the inductor, the ground, and direct-current input terminal is capable of being formed. The magnetoresistive effect element is arranged so that direct current flows in a direction from a magnetization fixed layer to a magnetization free layer.

Abstract: A magnetoresistive effect device includes at least one magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer, a first port, a second port, a first signal line which is connected to the first port and through which high-frequency current corresponding to a high-frequency signal input into the first port flows, a second signal line, and a direct-current input terminal. The magnetoresistive effect element is arranged so that a high-frequency magnetic field occurring from the first signal line is applied to the magnetization free layer. The magnetoresistive effect element is connected to the second port via the second signal line. The direct-current input terminal is connected to the magnetoresistive effect element.

Abstract: A magnetoresistive effect device includes a magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer; a first port; a second port; a signal line; an impedance element; and a direct-current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The impedance element is connected to ground and to the signal line between the magnetoresistive effect element and the first port or the second port. The direct-current input terminal is connected to the signal line at the opposite side to the impedance element with the magnetoresistive effect element in between the direct-current input terminal and the impedance element. A closed circuit including the magnetoresistive effect element, the signal line, the impedance element, the ground, and the direct-current input terminal is to be formed.

Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.