Abstract: A system and method for generating passive metadata from user interface selections at an imaging device includes an imaging device and at least one destination having at least one controllable setting. The imaging device preferably includes a document imaging system for capturing an image file, a user interface system for accepting passive data user input pertaining to the image file, a data conversion system for converting the passive data into a metadata file, and a transmission system for transmitting the image file and an associated metadata file through a network to at least one destination. The passive data affects at least one controllable setting of the destination. Passive data may be, for example, routing information, user information, file formatting instructions, and/or billing information.

Abstract: A data transmission system is provided that enables a user to move away before the completion of data transmission regardless of whether a refund is made in association with occurrence of a communication error when a data transmitting apparatus performs data transmission and collects a consideration. The data transmitting apparatus includes a consideration receiving portion that receives a consideration of FAX data transmission, a report destination input portion that inputs a report destination of a user, and a FAX transmission error detecting portion that detects a communication error at the time of the FAX data transmission. In case the FAX transmission error detecting portion detects a communication error, the system including the data transmitting apparatus transmits refund information for refunding the consideration of the FAX data transmission with the communication error to the report destination input through the report destination input portion.

Abstract: The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.

Abstract: The present invention provides a pre-expanded particulate polyolefin-based resin capable of easily attaining satisfactory secondary expandability, satisfactory surface appearance, and satisfactory dimensional stability even when it is intended to obtain an in-mold expansion molded article having a thin-wall shape. The present invention provides a pre-expanded particulate polypropylene-based resin including a polypropylene-based resin X as a base resin, where the resin X includes a resin mixture of at least a polypropylene-based resin A having a melting point of 140° C. or lower and a polypropylene-based resin B having a melting point of 145° C. or higher, and the resin mixture is modified by an organic peroxide so as to have a melt index of 5 g/10 min or more and less than 20 g/10 min.

Abstract: A pre-expanded polypropylene resin particle can be produced in the following manner: a polypropylene resin particle produced by an under water cut method, water, a dispersing agent, and a foaming agent are charged in a pressure-resistant container, the resulting mixture is heated to a temperature equal to or higher than the softening temperature of the polypropylene resin particle to allow the polypropylene resin particle to be impregnated with the foaming agent under pressure, and the resulting product is released into the atmosphere having a pressure lower than the pressure of the inside of the pressure-resistant container. As the polypropylene resin composition, a composition is used which comprises 100 parts by weight of a polypropylene resin and 1 to 20 parts by weight of a polyethylene resin having a melt viscosity of 10 to 2000 mPa·s at 140° C.

Abstract: A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.

Abstract: A film formation method includes a film formation process for forming an SiO2 film on a surface of a target object inside a process container by use of an Si source gas and an oxidizing agent, and an oxidation purge process for performing oxidation on films deposited inside the process container while exhausting gas from inside the process container after unloading the target object from the process container, wherein the film formation process and the oxidation purge process are alternately repeated a plurality of times without, interposed therebetween, a process for removing the films deposited inside the process container.

Abstract: The memory apparatus includes a memory device including a gate insulating layer formed on a silicon substrate by sequentially stacking a tunnel oxide layer, a charge trap layer, and a block oxide layer in this order, on the silicon substrate. In addition, a gate electrode is formed on the gate insulating layer. The block oxide layer is formed by stacking a first block oxide layer and a second block oxide layer, wherein the first block oxide layer is adjacent to the charge trap layer and the second block oxide layer is adjacent to the gate electrode. The second block oxide layer is formed of a dielectric material having higher permittivity than that of the first block oxide layer and having higher electron affinity than that of the first block oxide layer.

Abstract: A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.

Abstract: An antenna apparatus includes an antenna block and a substrate. The antenna block has a base that is made of a substantially cuboid dielectric body, an upper-surface conductor formed on an upper surface of the base, first and second pad electrodes that are formed on both ends of a bottom surface of the base in a longitudinal direction of the base, respectively, and a lateral-surface conductor connecting the upper-surface conductor and the second pad electrode. The substrate has a region mounting the antenna block, a ground pattern provided around the mounting region, first and second lands that are provided within the mounting region so as to correspond to the positions of the first and second pad electrodes, a feed line that is connected to the first land, an impedance-adjusting pattern connecting the first land and the ground pattern, and a frequency-adjusting pattern connecting the second land and the ground pattern.

Abstract: A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.

Abstract: The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 ?m depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.

Abstract: An image processing apparatus includes: a recognition process section for performing, on the basis of image data of a document, a character recognition process of recognizing a character contained in the document; a chromatic text generation section for generating color text data (character image data) indicative of character images in which character images with different attributes are displayed with different colors; and an image composition section for generating composite image data by combining the image data of the document with the color text data so that each of the character images indicated by the color text data is partially superimposed on a corresponding image of a character in the document. The image processing apparatus causes a display device to display an image in accordance with the composite image data. This allows a user to easily check whether or not a result of the character recognition process is correct.

Abstract: A pre-expanded polypropylene resin particle can be produced in the following manner: a polypropylene resin particle produced by an under water cut method, water, a dispersing agent, and a foaming agent are charged in a pressure-resistant container, the resulting mixture is heated to a temperature equal to or higher than the softening temperature of the polypropylene resin particle to allow the polypropylene resin particle to be impregnated with the foaming agent under pressure, and the resulting product is released into the atmosphere having a pressure lower than the pressure of the inside of the pressure-resistant container. As the polypropylene resin composition, a composition is used which comprises 100 parts by weight of a polypropylene resin and 1 to 20 parts by weight of a polyethylene resin having a melt viscosity of 10 to 2000 mPa·s at 140° C.

Abstract: An antenna device includes an antenna element and a printed circuit board on which the antenna element is mounted. The antenna element includes a base, a radiation conductor formed on an upper surface of the substrate and one end of the radiation conductor being an open end, a plurality of terminal electrodes formed on a bottom surface of the substrate, and a loop conductor of a substantially U-shape. The loop conductor is arranged to face one of the terminal electrodes via a gap having a predetermined width. An antenna mounting region is provided on a upper surface of the printed circuit board to be adjacent to an edge of a long side of the printed circuit board. A feed line is led in the antenna mounting region along the edge. One and the other end of the loop conductor are connected to the feed line and a ground pattern, respectively.

Abstract: An antenna device is provided with an antenna element including a base, an inductance adjustment pattern that is formed on the upper surface and a side surface of the base and has a substantially U-shape, a capacitance adjustment pattern that is formed on the upper surface of the base and is placed to face the inductance adjustment pattern, and first to third terminal electrodes provided on the bottom surface of the base. The antenna element is installed between the first side and the second side of the ground pattern that form the two facing sides of the antenna mounting region. One end of the inductance adjustment pattern is connected to the feed line, the other end of the inductance adjustment pattern is connected to the first side of the ground pattern, and the third terminal electrode is connected to the second side of the ground pattern.

Abstract: The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.

Abstract: A network communication device has a function as a network facsimile device for carrying out sending and receiving of data via a network. A facsimile document data is transmitted as e-mail. The device is capable of setting information indicative of whether or not the transmission confirmation response by Message Disposition Notification (MDN) is required, according to a receiver when sending the e-mail. On this account, it is possible to provide a network communication device capable of preventing unnecessary waiting for transmission confirmation response or unnecessary output of a record of failure of transmission.

Abstract: A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.

Abstract: A network communication device is provided with e-mail message composing means and e-mail message transmitting/receiving means. The e-mail message composing means has functions of incorporating an MDN request and return transmission conditions into an e-mail message and of consolidating MDN responses for multiple received e-mail messages into a collective MDN response to compose a single e-mail message. The e-mail message transmitting/receiving means has a function of recognizing the MDN request and the return transmission conditions.