Abstract: A laminate includes an amorphous glass substrate, and an AlN layer formed on the amorphous glass substrate. The AlN layer is c-axis oriented on the amorphous glass substrate, a glass transition temperature (Tg) of the amorphous glass substrate is 720° C. to 810° C., a coefficient of thermal expansion (CTE) of the amorphous glass substrate is 3.5×10?6 [1/K] to 4.0×10?6 [1/K], and a softening point of the amorphous glass substrate is 950° C. to 1050° C.

Abstract: A chip on submount includes: a submount including a first surface directed in a first direction; a covering layer mounted on the first surface, extending to intersect the first direction, and including a second surface directed in the first direction; a laser element mounted on the second surface and including: a third surface directed in the first direction; and a light emission unit positioned at an intermediate portion of the laser element along a second direction intersecting the first direction, extending in a third direction intersecting the first direction and second direction, and configured to output laser light in the third direction; and a bonding wire attached onto the third surface and configured to exert a pressing force on the laser element, the pressing force including a component force directed in a direction opposite to the first direction.

Abstract: A casing (10) is divided into a cylindrical first case portion (51) integrally having a partition part (54), a second case portion (52) connected to one end of the first case portion in an axial direction and configured to cover a second space (S2), and a third case portion (53) connected to the other end of the first case portion in the axial direction and configured to cover a first space (S1). A signal cable passed through a through hole (54c) of the partition part extends from a sensor (72, 73) to an external connector (81) provided in the second case portion or the third case portion, and is anchored to the first case portion (51) in the vicinity of a through hole (54c) of the partition part.

Abstract: A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.

Abstract: A semiconductor light emitting element includes: a growth substrate; a mask formed on the growth substrate; and a columnar semiconductor layer grown from at least one opening that is provided in the mask. The columnar semiconductor layer includes an n-type nanowire layer formed at a center thereof, an active layer formed on an outer periphery of the n-type nanowire layer, and a p-type semiconductor layer formed on an outer periphery of the active layer. An opening ratio of the opening is 0.1% or more and 5.0% or less, and a light emission wavelength is 480 nm or more.

Abstract: Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Abstract: To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

Abstract: A buried layer forming step includes three steps of a facet structure forming step, a c-plane forming step, and a flattening step. In the facet structure forming step, a buried layer grows to form a periodic facet structure that matches an arrangement pattern of columnar semiconductors. In the c-plane forming step, the buried layer grows such that a {0001} plane (upper surface) is formed in a region of the buried layer corresponding to an upper portion of the columnar semiconductor. In the flattening step, lateral growth of the buried layer is promoted and the c-plane formed in the c-plane forming step is widened to flatten a surface of the buried layer.

Abstract: A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.

Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

Abstract: Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.

Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.

Abstract: Achieving resistance reduction of a nitride semiconductor multilayer film reflector. In the nitride semiconductor multilayer film reflector, a first semiconductor layer has a higher Al composition than a second semiconductor layer. A first composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a group III element face side of the first semiconductor layer, the first composition-graded layer being adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer. A second composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a nitride face side of the first semiconductor layer. The second composition-graded layer is adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer.

Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.

Abstract: Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.

Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Abstract: A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.