Patents by Inventor Tetsuya Takeuchi

Tetsuya Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11031733
    Abstract: It is aimed to reliably prevent inverted insertion of a terminal fitting. Oblique insertion restricting portions (27, 28) recessed while extending in a direction intersecting an inserting direction of a terminal fitting (T) into a connector housing (1) and capable of restricting the insertion of a rectangular tube portion (10) by a material of an inner wall of a cavity (4) biting into the oblique insertion restricting portions when the terminal fitting (T) is inserted in an orientation inverted from a proper posture and in an oblique posture into the cavity (4) are provided on corner parts of the rectangular tube portion (10).
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: June 8, 2021
    Inventors: Shunya Takeuchi, Yasuo Omori, Tetsuya Miyamura
  • Publication number: 20210167659
    Abstract: A casing (10) is divided into a cylindrical first case portion (51) integrally having a partition part (54), a second case portion (52) connected to one end of the first case portion in an axial direction and configured to cover a second space (S2), and a third case portion (53) connected to the other end of the first case portion in the axial direction and configured to cover a first space (S1). A signal cable passed through a through hole (54c) of the partition part extends from a sensor (72, 73) to an external connector (81) provided in the second case portion or the third case portion, and is anchored to the first case portion (51) in the vicinity of a through hole (54c) of the partition part.
    Type: Application
    Filed: August 9, 2019
    Publication date: June 3, 2021
    Inventors: Aiko MYOUKI, Tetsuya YAMAMOTO, Shinya TAIKOU, Shiro TAMURA, Naoya TAKEUCHI
  • Publication number: 20210135444
    Abstract: There is provided a supporting member having excellent durability and an apparatus including the supporting member. The supporting member includes an elastic member and a plurality of block members formed thereon. The supporting member is deformable from a shape in which end surfaces of the block members are in contact with each other to a shape in which the end surfaces are separated from each other. The elastic member includes a fixed region whose deformation is restricted by being fixed to a bottom surface of the block member, and the supporting member includes a flexure reduction unit for reducing flexure at a position near the fixed region of the elastic member.
    Type: Application
    Filed: January 18, 2019
    Publication date: May 6, 2021
    Applicant: JUNKOSHA INC.
    Inventors: Daiki HIRAOKA, Hiroshi TAKEUCHI, Yasuhiro MISU, Tetsuya HIROSE
  • Publication number: 20210127664
    Abstract: A device for transporting objects such as a graft is configured to efficiently establish a liquid-tight state with a simple operation. The device is to be used in a state of being detachably attached to a container for storing a graft, the device including: a lid member for sealing the container; and an annular member for forming a first space by being interposed between the lid member and the container, wherein a second space is formed between the lid member and an inside surface of the container.
    Type: Application
    Filed: January 8, 2021
    Publication date: May 6, 2021
    Applicant: TERUMO KABUSHIKI KAISHA
    Inventors: Ryohei TAKEUCHI, Tetsuya YAMAGUCHI, Toshikazu TAKEUCHI, Yosuke KURUMA, Kenta MIZUMOTO
  • Publication number: 20210111538
    Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.
    Type: Application
    Filed: March 13, 2018
    Publication date: April 15, 2021
    Applicants: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Tetsuya TAKEUCHI, Isamu AKASAKI, Kazuki KIYOHARA, Masaru TAKIZAWA, Ji-Hao LIANG
  • Publication number: 20210074877
    Abstract: Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.
    Type: Application
    Filed: September 9, 2020
    Publication date: March 11, 2021
    Applicants: KOITO MANUFACTURING CO., LTD., MEIJO UNIVERSITY, TOYODA GOSEI CO., LTD.
    Inventors: Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki, Lu Weifang, Naoki Sone, Kazuyoshi Iida, Ryo Nakamura, Masaki Oya
  • Patent number: 10892601
    Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: January 12, 2021
    Assignees: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Masaru Kuramoto, Seiichiro Kobayashi, Tetsuya Takeuchi
  • Patent number: 10833223
    Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: November 10, 2020
    Assignees: TOYODA GOSEI CO., LTD., MEIJO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hisanori Kojima, Toshiki Yasuda, Kazuyoshi Iida
  • Publication number: 20200144451
    Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.
    Type: Application
    Filed: January 9, 2020
    Publication date: May 7, 2020
    Applicant: MEIJO UNIVERSITY
    Inventors: Tetsuya TAKEUCHI, Tomoyuki SUZUKI, Hiroki SASAJIMA, Motoaki IWAYA, Isamu AKASAKI
  • Patent number: 10593831
    Abstract: Achieving resistance reduction of a nitride semiconductor multilayer film reflector. In the nitride semiconductor multilayer film reflector, a first semiconductor layer has a higher Al composition than a second semiconductor layer. A first composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a group III element face side of the first semiconductor layer, the first composition-graded layer being adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer. A second composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a nitride face side of the first semiconductor layer. The second composition-graded layer is adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: March 17, 2020
    Assignee: MEIJO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
  • Publication number: 20190363515
    Abstract: A vertical cavity light-emitting element comprises a substrate, a first multilayer reflector formed on the substrate, a semiconductor structure layer formed on the first multilayer reflector and including a light emitting layer, a second multilayer reflector formed on the semiconductor structure layer and constituting a resonator together with the first multilayer reflector, and a light guide layer configured to form a light guide structure including a center region extending in a direction perpendicular to the upper surface of said substrate between the first and second multilayer reflectors and including a light emission center of the light-emitting layer and a peripheral region provided around the center region and having a smaller optical distance between the first and second multilayer reflectors than that in the center region. The second multilayer reflector has a flatness property over the center region and the peripheral region.
    Type: Application
    Filed: May 22, 2019
    Publication date: November 28, 2019
    Applicants: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Masaru KURAMOTO, Seiichiro KOBAYASHI, Tetsuya TAKEUCHI
  • Patent number: 10411438
    Abstract: Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: September 10, 2019
    Assignees: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Isamu Akasaki, Takanobu Akagi
  • Publication number: 20190148592
    Abstract: To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.
    Type: Application
    Filed: November 8, 2018
    Publication date: May 16, 2019
    Inventors: Tetsuya TAKEUCHI, Satoshi KAMIYAMA, Motoaki IWAYA, Isamu AKASAKI, Hisanori KOJIMA, Toshiki YASUDA, Kazuyoshi IIDA
  • Patent number: 10116120
    Abstract: A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: October 30, 2018
    Assignees: STANLEY ELECTRIC CO., LTD., MEIJO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Isamu Akasaki, Shinichi Tanaka, Kazufumi Tanaka
  • Publication number: 20180166856
    Abstract: A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.
    Type: Application
    Filed: December 8, 2017
    Publication date: June 14, 2018
    Applicants: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Tetsuya TAKEUCHI, Isamu AKASAKI, Shinichi TANAKA, Kazufumi TANAKA
  • Publication number: 20180166855
    Abstract: Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.
    Type: Application
    Filed: December 8, 2017
    Publication date: June 14, 2018
    Applicants: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Tetsuya TAKEUCHI, Isamu AKASAKI, Takanobu AKAGI
  • Patent number: 9847449
    Abstract: A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: December 19, 2017
    Assignees: MEIJO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Kenjo Matsui, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki, Takanobu Akagi, Sho Iwayama
  • Patent number: 9716209
    Abstract: This application provides a method of manufacturing an n-p-n nitride-semiconductor light-emitting device which includes a current confinement region (A) using a buried tunnel junction layer and in which a favorable luminous efficacy can be obtained and to provide the n-p-n nitride-semiconductor light-emitting device. The p-type activation of a p-type GaN crystal layer stacked below a tunnel junction layer is performed in an intermediate phase of a manufacturing process in which the p-type GaN crystal layer is exposed to atmosphere gas with the tunnel junction layer partially removed, before the tunnel junction layer is buried in an n-type GaN crystal layer. In the intermediate phase of the manufacturing process in which the p-type GaN crystal layer is exposed, p-type activation is efficiently performed on the p-type GaN crystal layer, and a p-type GaN crystal layer with low electric resistance can be obtained.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: July 25, 2017
    Assignee: MELIO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Yuka Kuwano, Motoaki Iwaya, Isamu Akasaki
  • Publication number: 20170155016
    Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.
    Type: Application
    Filed: March 4, 2014
    Publication date: June 1, 2017
    Applicant: MEIJO UNIVERSITY
    Inventors: Tetsuya TAKEUCHI, Tomoyuki SUZUKI, Hiroki SASAJIMA, Motoaki IWAYA, Isamu AKASAKI
  • Patent number: 9666753
    Abstract: A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. Antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1% and is less than 1%. A concentration of an n-type impurity in the n-type semiconductor layer is lower than an electron concentration.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: May 30, 2017
    Assignee: MEIJO UNIVERSITY
    Inventors: Tetsuya Takeuchi, Daisuke Komori, Kaku Takarabe, Motoaki Iwaya, Isamu Akasaki