Abstract: Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.

Abstract: A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region located at an inner side of the outer region, forming a first wiring over the first insulation film in the inner region, forming a second insulation film over the first wiring and over the first insulation film, decreasing a film thickness of the second insulation film in the inner region with regard to a film thickness of the second insulation film in the outer region, and polishing the second insulation film after the decreasing of the film thickness of the second insulation film.

Abstract: Disclosed is a method for producing a heat insulating laminate structure having an excellent solar radiation shielding capability as well as an excellent radio wave transparency. The method includes placing a transparent laminate film between two transparent substrates, the transparent laminate film having on at least one side of a transparent polymer film a laminated layer structure in which a metal oxide layer containing an organic component and a metal layer are laminated and grooves having widths of 30 ?m or less are formed with dividing the metal layer; bonding the two substrates to each other through the transparent laminate film under application of a pressure; and promoting division of the metal layer in the transparent laminate film by the applied pressure to increase an overall surface resistance.

Abstract: A transparent laminate film which has visible light transmittance, sunlight blocking properties, radio wave transmittance and good appearance is provided. A transparent laminate film includes a laminate structure formed on at least one side of a transparent polymer film, in which a metal oxide layer and a metal layer are laminated, the metal oxide layer containing an organic component, wherein grooves having a width of 30 ?m or less are formed in the laminate structure, and an overall surface resistance is 150?/? or more. Preferably, the grooves are numerous cracks, or are formed by laser processing. Further, preferably, the transparent polymer film has an easy adhesion layer formed on at least one side thereof, and the laminate structure is formed on top of the easy adhesion layer. Furthermore, preferably, the metal oxide layer containing the organic component is formed by a sol-gel method using optical energy during sol-gel curing.

Abstract: A transparent laminate film which has visible light transmittance, sunlight blocking properties, radio wave transmittance and good appearance is provided. A transparent laminate film includes a laminate structure formed on at least one side of a transparent polymer film, in which a metal oxide layer and a metal layer are laminated, the metal oxide layer containing an organic component, wherein grooves having a width of 30 ?m or less are formed in the laminate structure, and an overall surface resistance is 150 ?/? or more. Preferably, the grooves are numerous cracks, or are formed by laser processing. Further, preferably, the transparent polymer film has an easy adhesion layer formed on at least one side thereof, and the laminate structure is formed on top of the easy adhesion layer. Furthermore, preferably, the metal oxide layer containing the organic component is formed by a sol-gel method using optical energy during sol-gel curing.

Abstract: A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other.

Abstract: Disclosed is a method for producing a heat insulating laminate structure having an excellent solar radiation shielding capability as well as an excellent radio wave transparency. The method includes placing a transparent laminate film between two transparent substrates, the transparent laminate film having on at least one side of a transparent polymer film a laminated layer structure in which a metal oxide layer containing an organic component and a metal layer are laminated and grooves having widths of 30 ?m or less are formed with dividing the metal layer; bonding the two substrates to each other through the transparent laminate film under application of a pressure; and promoting division of the metal layer in the transparent laminate film by the applied pressure to increase an overall surface resistance.

Abstract: Provided are an optical device including a multilayer reflector having a layer whose optical thickness is not ?/4, and a vertical cavity surface emitting laser using the optical device. A resonance frequency shift or a reduction in reflectivity which is caused by a deviation from an optical thickness of ?/4 can be suppressed to improve characteristics and yield. The optical device for generating light of a wavelength ? includes a reflector and an active layer. The reflector is a semiconductor multilayer reflector including a first layer and a second layer which are alternatively laminated and have different refractive indices. The first layer has an optical thickness smaller than ?/4. The second layer has an optical thickness larger than ?/4. The interface between the first layer and the second layer is located at neither a node nor an antinode of an optical intensity distribution within the reflector.

Abstract: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of ?, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of ?/8 to 3?/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.

Abstract: A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.

Abstract: A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other.

Abstract: A transparent laminate film which has visible light transmittance, sunlight blocking properties, radio wave transmittance and good appearance is provided. A transparent laminate film includes a laminate structure formed on at least one side of a transparent polymer film, in which a metal oxide layer and a metal layer are laminated, the metal oxide layer containing an organic component, wherein grooves having a width of 30 ?m or less are formed in the laminate structure, and an overall surface resistance is 150 ?/? or more. Preferably, the grooves are numerous cracks, or are formed by laser processing. Further, preferably, the transparent polymer film has an easy adhesion layer formed on at least one side thereof, and the laminate structure is formed on top of the easy adhesion layer. Furthermore, preferably, the metal oxide layer containing the organic component is formed by a sol-gel method using optical energy during sol-gel curing.

Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.

Abstract: A surface emitting laser includes first mirror, a second mirror, and an active layer formed between the first mirror and the second mirror. A third mirror is formed between the first mirror and the active layer. A first cavity is constituted by the first mirror and the second mirror, and a second cavity is constituted by the first mirror and the third mirror.

Abstract: Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.

Abstract: A surface emitting laser configured by laminating on a substrate a lower reflection mirror, an active layer and an upper reflection mirror includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a convex high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of ?, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, and an absorption layer causing band-to-band absorption is provided in the laminated structure.

Abstract: This invention provides a surface-emitting laser that can prevent delamination at the interface of a selective oxidation layer and a spacer layer, while suppressing any rise of voltage, to improve the reliability of operation.

Abstract: A transparent laminated film is provided with which it is possible to inhibit peeling of thin film layers, even with long-term exposure to sunlight during use and exposure to UV rays during quality evaluation. The film has a thin film layer obtained by lamination of multiple thin films on at least one side of a transparent polymer film. This thin film layer has metal oxide thin films formed by a sol-gel process using light energy during sol-gel hardening and post-oxidation thin films formed by post-oxidation of at least one thin film selected from metal thin film, alloy thin film, and partially oxidized metal oxide thin film.

Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.

Abstract: An organic electroluminescence element has a layered structure on a surface of a transparent substrate. The layered structure comprises an organic material layer including a light-emitting organic material layer, an opaque electrode layer, an insulating layer, a metal layer and a resin film in order. The organic electroluminescence element is improved in durability because moisture is prevented from permeating into a light-emitting element.