Abstract: A leak inspection device for inspecting leaks from a work by sealing a gas inside the work or sucking the gas therefrom includes: a depressurizing device that reduces the pressure of the gas inside the work; a pressurizing device that pressurizes the gas inside the work; a temperature sensor that detects the temperature of the work; a pressure sensor that detects the pressure of the gas inside the work; and a controller. The controller calculates the saturation vapor pressure at the same temperature as the temperature of the work, controls the depressurizing device to thereby reduce the pressure of the gas inside the work to the saturation vapor pressure, sucks the water vapor that has vaporized inside the work, controls the pressurizing device to thereby seal the gas inside the work and pressurize the gas inside the work until the temperature of the work detected by the temperature sensor reaches a predetermined temperature.

Abstract: I-beam wear assessment trolleys include a first sensor assembly including a first upper block, a first lower block, a first pressure sensor positioned between the first upper block and the first lower block, and at least one first biasing member positioned between the first pressure sensor and either the first upper block or the first lower block of the first sensor assembly, wherein the at least one first biasing member biases the first upper block and the first lower block of the first sensor assembly away from one another.

Abstract: A power transmission device has a rigid body that includes a contact portion coming into contact with the first or second friction member and that moves the contact portion from a position of contact with the first or second friction member to a position of no contact with the first and second friction members, an elastic body that applies to the rigid body a force moving the contact portion to a position of contact with the first or second friction member, a first pushing mechanism that applies to the rigid body a pressure of liquid moving the contact portion to a position of contact with the first or second friction member, and a second pushing mechanism that applies to the rigid body a pressure of liquid moving the contact portion to a position of no contact with the first and second friction members.

Abstract: A solid-state image sensor includes a semiconductor layer having a first conductive type, diffusion layers which are arranged in the semiconductor layer, each having a second conductive type, and each includes a pixel, a pixel transistor disposed on the semiconductor layer, and an insulating layer which is disposed under the pixel transistor and which is not disposed under the diffusion layers. The pixel transistor is disposed between the other pixels different from the pixel being electrically connected to the pixel transistor.

Abstract: According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.

Abstract: An image forming apparatus including: a first and a second photoconductor groups constituted of one or more photoconductors respectively; a first and a second drive control sections for controlling the drive of the first and the second photoconductor groups respectively to rotate the photoconductors thereof, wherein the rotational phases of the first photoconductor group and the second photoconductor group are adjusted to be matched therebetween; and the first and the second drive control sections control so that predetermined profile of a target speed is applied to the first and second photoconductor groups wherein, in the target-speed profile, the first photoconductor group starts rotating after a elapse of a predetermined startup delay time from the second photoconductor group starts rotating, and both groups end at a same final speed predetermined for full-color image formation, wherein the startup delay time is predetermined based on measurements of times needed for each of the first and the second photo

Abstract: I-beam wear assessment trolleys include a first sensor assembly including a first upper block, a first lower block, a first pressure sensor positioned between the first upper block and the first lower block, and at least one first biasing member positioned between the first pressure sensor and either the first upper block or the first lower block of the first sensor assembly, wherein the at least one first biasing member biases the first upper block and the first lower block of the first sensor assembly away from one another.

Abstract: According to one embodiment, a solid-state imaging device includes a diffusion layer, first and second diffusion layers, and p-type amorphous silicon compound. The diffusion layer of a first conduction type is formed in a surface of a semiconductor substrate of the first conduction type. The diffusion layer functions as a charge accumulation part for accumulating electrons generated in the semiconductor substrate by light emitted from a back side of the semiconductor substrate to a surface side. The first and second diffusion layers of a second conduction type sandwich the charge accumulation part and are formed so as to reach the inside of the semiconductor substrate from the surface of the semiconductor substrate. The p-type amorphous silicon compound electrically isolates the charge accumulation part and is buried in the first and second trenches formed on the back side of the semiconductor substrate.

Abstract: An image forming apparatus including: a first and a second photoconductor groups constituted of one or more photoconductors respectively; a first and a second drive control sections for controlling the drive of the first and the second photoconductor groups respectively to rotate the photoconductors thereof, wherein the rotational phases of the first photoconductor group and the second photoconductor group are adjusted to be matched therebetween; and the first and the second drive control sections control so that the first and the second photoconductor groups are driven simultaneously with an equal target speed during a formation of a image, wherein an initial drive speed is lower than a predetermined speed for image-formation, and after the first and the second photoconductor groups reaches the initial drive speed, the target speed is changed from the initial drive speed to the speed for image-formation.

Abstract: According to one embodiment, a back side illumination solid-state image sensing device which comprises a pixel region where a plurality of pixels each including a photoelectric converter and a signal scanning circuit are arranged on a semiconductor substrate, and in which a light illumination surface is formed on a substrate surface opposite to a surface of the semiconductor substrate on which the signal scanning circuit is formed, includes a silicon oxide film formed on the semiconductor substrate on the light illumination surface side, a p-type amorphous silicon compound layer formed on the silicon oxide film, and a hole storage layer formed by the p-type amorphous silicon compound layer near an interface between the semiconductor substrate on the light illumination surface side and the silicon oxide film.

Abstract: Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

Abstract: An n/p?/p+ substrate where a p?-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p?-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p?-type epitaxial layer from the substrate surface.

Abstract: A solid-state image sensor includes a semiconductor layer having a first conductive type, diffusion layers which are arranged in the semiconductor layer, each having a second conductive type, and each includes a pixel, a pixel transistor disposed on the semiconductor layer, and an insulating layer which is disposed under the pixel transistor and which is not disposed under the diffusion layers. The pixel transistor is disposed between the other pixels different from the pixel being electrically connected to the pixel transistor.

Abstract: A method of designing a wiring structure of an LSI is capable of reducing a capacitance variation ratio ?C/C or a resistance-by-capacitance variation ratio ?(RC)/(RC) of the wiring structure.

Abstract: It is an object to prevent distortions and deviations of images caused by the eccentricity of a driven gear mounted to a rotational shaft of a photosensitive drum. There are provided a driving gear which is secured to a rotational shaft of a rotational driving power source and is rotated at a constant peripheral speed, a driven gear secured coaxially to a rotational shaft of a cylindrical-shaped photosensitive member, a phase control gear having the same diameter as that of the driven gear and having the same rotational speed variation characteristic as that of the driven gear, and a transmission gear, and a driving force from the driving gear is transmitted to the driven gear through the phase control gear and the transmission gear.

Abstract: A cleaning device is provided with a cleaning unit (35) disposed downstream from a position at which a toner image is transferred to a paper. The cleaning unit (35) is provided with a cleaning blade (35c) for scraping off residual toner attached to an image bearing member and a toner catching sheet (35e) for preventing the residual toner or paper dust which have been scraped off from falling outside the cleaning unit. The free length in the toner catching sheet (35e) between affixed positions of a first end portion which is affixed to the cleaning unit (35) and a second end portion which abuts an outer circumferential portion of the image bearing member is determined by an amount of paper dust buildup on the outer circumferential portion of the image bearing member.

Abstract: A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

Abstract: According to an aspect of the invention, there is provided an amplification-type solid-state image sensing device which uses a semiconductor substrate formed by epitaxially depositing an n-type semiconductor layer on a p-type semiconductor substrate and has a photoelectric conversion unit formed in the n-type semiconductor layer including a first p-type semiconductor layer which is formed under the photoelectric conversion unit of at least one of a G pixel portion and a B pixel portion a second p-type semiconductor layer which is formed to surround the photoelectric conversion unit together with the first p-type semiconductor layer and has a depth up to the first p-type semiconductor layer and a third p-type semiconductor layer which is formed to surround an R pixel portion and has a depth up to the p-type semiconductor substrate.

Abstract: An image forming apparatus including: image forming sections, each image forming section forming an image of a color component among plural color components under a predetermined condition, and forming a pattern of each color component for adjusting the condition; a detecting section that reads the formed patterns so as to perform a temporary detection and a main detection of a deviation from a reference under the condition; and a correction control section that determines whether the deviation of the temporary detection exceeds a predetermined threshold value or not, and when the deviation exceeds the threshold value, executes the main detection to fully detect the deviation so as to correct the condition, wherein the correction control section controls to form the pattern for the temporary detection, the number of the color components for the temporary detection being fewer than those of the patterns to be used for the main detection.

Abstract: An image forming apparatus including: a first and a second photoconductor groups constituted of one or more photoconductors respectively; a first and a second drive control sections for controlling the drive of the first and the second photoconductor groups respectively to rotate the photoconductors thereof, wherein the rotational phases of the first photoconductor group and the second photoconductor group are adjusted to be matched therebetween; and the first and the second drive control sections control so that predetermined profile of a target speed is applied to the first and second photoconductor groups wherein, in the target-speed profile, the first photoconductor group starts rotating after a elapse of a predetermined startup delay time from the second photoconductor group starts rotating, and both groups end at a same final speed predetermined for full-color image formation, wherein the startup delay time is predetermined based on measurements of times needed for each of the first and the second photo