Abstract: A system monitors data accesses to specific rows of memory to determine if a row hammer condition exists. The system can monitor accessed rows of memory to determine if the number of accesses to any of the rows exceeds a threshold associated with risk of data corruption on a row of memory physically adjacent to the row with high access. Based on the monitoring, a memory controller can determine if the number of accesses to a row exceeds the threshold, and indicate address information for the row whose access count reaches the threshold.

Abstract: Systems and methods of managing a link provide for receiving a remote width capability during a link initialization, the remote width capability corresponding to a remote port. A link between a local port and the remote port is operated at a plurality of link widths in accordance with the remote width capability.

Abstract: REUT (Robust Electrical Unified Testing) for memory links is introduced which speeds testing, tool development, and debug. In addition it provides training hooks that have enough performance to be used by BIOS to train parameters and conditions that have not been possible with past implementations. Address pattern generation circuitry is also disclosed.

Abstract: Methods and apparatus relating to link power savings with state retention are described. In one embodiment, one or more components of two agents coupled via a serial link are turned off during idle periods while retaining link state in each agent. Other embodiments are also disclosed.

Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses for the active training of memory command timing. In some embodiments, the CMD/CTL timing is actively trained using active feedback between memory modules and the memory controller. Other embodiments are described and claimed.

Abstract: A memory subsystem empirically tests performance parameters of I/O with a memory device. Based on the empirical testing, the memory subsystem can set the performance parameters specific to the system in which the memory subsystem is included. A test system performs the testing. For each of multiple different settings for multiple different I/O circuit parameters, the test system sets a value for each I/O circuit parameter, generates test traffic to stress test the memory device with the parameter value(s), and measures an operating margin for the I/O performance characteristic. The test system further executes a search function to determine values for each I/O circuit parameter at which the operating margin meets a minimum threshold and performance of at least one of the I/O circuit parameters is increased. The memory subsystem sets runtime values for the I/O circuit parameters based on the search function.

Abstract: A memory subsystem can test a memory device in situ, testing the performance of parameters of operation the device in the system it is built into during production. Thus, the system can detect the specific values that will work for one or more operating parameters for the memory device in actual runtime. A test component embedded in the memory subsystem can perform a stress test and identify specific bits or lines of memory that experience failure under one or more stresses. The system can then map out the failed bits or lines to prevent the bits/lines from being used in runtime of the system.

Abstract: A memory subsystem can test a memory device in situ, testing the performance of the device in the system it is built into during production. Thus, the refresh rate can be adjusted specific to the memory device(s) of a specific system, rather than defaulting to a refresh frequency specified by a standard for the memory device(s). A test component embedded within the host memory subsystem can perform a test and identify specific bits or lines of memory that produce errors when a lower frequency refresh rate is used. The system maps out the identified bits or lines to prevent the bits/lines from being used in runtime of the system. The memory subsystem can then set its refresh rate to an adjusted refresh rate at which a threshold number of errors can be removed by mapping out the bits/lines.

Abstract: In some embodiments, a chip comprises control circuitry to provide inband signals, inband output ports, and transmitters to transmit the inband signals to the inband output ports. The control circuitry selectively includes loopback initiating commands in the inband signals. Other embodiments are described and claimed.

Abstract: A memory subsystem includes a test signal generator of a memory controller that generates a test data signal in response to the memory controller receiving a test transaction. The test transaction indicates one or more I/O operations to perform on an associated memory device. The test signal generator can generate data signals from various different pattern generators. The memory controller scheduler schedules the test data signal pattern, and sends it to the memory device. The memory device can then execute I/O operation(s) to implement the test transaction. The memory controller can read back data written to a specific address of the memory device and compare the read back data with expected data. When the read back data and the expected data do not match, the memory controller can record an error. The error can include the specific address of the error, the specific data, and/or encoded data.

Abstract: A link latency management for a high-speed point-to-point network (pTp) is described The link latency management facilitates calculating latency of a serial interface by tracking a round trip delay of a header that contains latency information. Therefore, the link latency management facilitates testers, logic analyzers, or test devices to accurately measure link latency for a point-to-point architecture utilizing a serial interface.

Abstract: Described herein is an apparatus for dynamically adjusting a voltage reference level for optimizing an I/O system to achieve a certain performance metric. The apparatus comprises: a voltage reference generator to generate a voltage reference; and a dynamic voltage reference control unit, coupled with the voltage reference generator, to dynamically adjust a level of the voltage reference in response to an event. The apparatus is used to perform the method comprising: generating a voltage reference for an input/output (I/O) system; determining a worst case voltage level of the voltage reference; dynamically adjusting, via a dynamic voltage reference control unit, the voltage reference level based on determining the worst case voltage level; and computing a center of an asymmetrical eye based on the dynamically adjusted voltage reference level.

Abstract: A memory subsystem includes a test engine coupled to a memory controller that can provide memory access transactions to the memory controller, bypassing a memory address decoder. The test engine hardware is configurable for different tests. The test engine identifies a range of addresses through which to iterate a test sequence in response to receiving a software instruction indicating a test to perform. For each iteration of the test, the test engine, via the selected hardware, generates a memory access transaction, selects an address from the range, and sends the transaction to the memory controller. The memory controller schedules memory device commands in response to the transaction, which causes the memory device to execute operations to carry out the transaction.

Abstract: A memory subsystem includes a test engine coupled to a memory controller that can provide memory access transactions to the memory controller, bypassing a memory address decoder. The test engine receives a command to cause it to generate transactions to implement a memory test. The command identifies the test to implement, and the test engine generates one or more memory access transactions to implement the test on the memory device. The test engine passes the transactions to the memory controller, which can schedule the commands with its scheduler. Thus, the transactions cause deterministic behavior in the memory device because the transactions are executed as provided, while at the same time testing the actual operation of the device.

Abstract: Described herein is an apparatus for dynamically adjusting a voltage reference level for optimizing an I/O system to achieve a certain performance metric. The apparatus comprises: a voltage reference generator to generate a voltage reference; and a dynamic voltage reference control unit, coupled with the voltage reference generator, to dynamically adjust a level of the voltage reference in response to an event. The apparatus is used to perform the method comprising: generating a voltage reference for an input/output (I/O) system; determining a worst case voltage level of the voltage reference; dynamically adjusting, via a dynamic voltage reference control unit, the voltage reference level based on determining the worst case voltage level; and computing a center of an asymmetrical eye based on the dynamically adjusted voltage reference level.

Abstract: A memory controller issues a targeted refresh command. A specific row of a memory device can be the target of repeated accesses. When the row is accessed repeatedly within a time threshold (also referred to as “hammered” or a “row hammer event”), physically adjacent row (a “victim” row) may experience data corruption. The memory controller receives an indication of a row hammer event, identifies the row associated with the row hammer event, and sends one or more commands to the memory device to cause the memory device to perform a targeted refresh that will refresh the victim row.

Abstract: A system monitors data accesses to specific rows of memory to determine if a row hammer condition exists. The system can monitor accessed rows of memory to determine if the number of accesses to any of the rows exceeds a threshold associated with risk of data corruption on a row of memory physically adjacent to the row with high access. Based on the monitoring, a memory controller can determine if the number of accesses to a row exceeds the threshold, and indicate address information for the row whose access count reaches the threshold.

Abstract: In some embodiments, a chip comprises control circuitry to provide inband signals, inband output ports, and transmitters to transmit the inband signals to the inband output ports. The control circuitry selectively includes loopback initiating commands in the inband signals. Other embodiments are described and claimed.

Abstract: A technique to perform virtualization of lanes within a common system interface (CSI) link. More particularly, embodiments described herein relate to virtualizing interconnective paths between two or more electronic devices residing in an electronic network.

Abstract: Systems and methods of managing a link provide for receiving a remote width capability during a link initialization, the remote width capability corresponding to a remote port. A link between a local port and the remote port is operated at a plurality of link widths in accordance with the remote width capability.