Abstract: A method includes destructively reading bits of a spin torque magnetic random access memory, using error correcting code (ECC) for error correction, and storing inverted or non-inverted data in data-store latches. When a subsequent write operation changes the state of data-store latches, parity calculation and majority detection of the bits are initiated. A majority bit detection and potential inversion of write data minimizes the number of write current pulses. A subsequent write operation received within a specified time or before an original write operation is commenced will cause the majority detection operation to abort.

Abstract: An apparatus and method of programming a spin-torque magnetoresistive memory array includes a metal reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current flows through it. A spin torque transfer current is then applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. In another mode of operation, a resistance of the plurality of bits is sensed prior to generating the magnetic field. The resistance is again sensed after the magnetic field is generated and the data represented by the initial state of each bit is determined from the resistance change. A spin torque transfer current is then applied only to those magnetoresistive bits having a resistance different from prior to the magnetic field being applied.

Abstract: A memory is provided that simplifies a fabrication process and structure by reducing the number of source lines and bitlines accessible to circuitry outside of the memory array. The memory has first and second row groups comprising a plurality of memory elements each coupled to one each of a plurality of M bit lines; first and second local source lines and first and second word lines, each coupled to each of the plurality of memory elements; and circuitry coupled to the first and second word lines and configured to select one of the first and second row groups, and coupled to the plurality of M bit lines and configured to apply current of magnitude N through the memory element in the selected row group coupled to one of the plurality of M bit lines by applying current of magnitude less than N to two or more of the remaining M-1 bit lines.

Abstract: A memory controller and method for interleaving volatile and non-volatile memory different latencies and page sizes are described wherein a single DDR3 memory controller communicates with a number of memory modules comprising of at least non-volatile memory, e.g., spin torque magnetic random access memory, integrated in a different Rank or Channel with a volatile memory, e.g., dynamic random access memory (DRAM).

Abstract: An apparatus and method of programming a spin-torque magnetoresistive memory array includes a metal reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current flows through it. A spin torque transfer current is then applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. In another mode of operation, a resistance of the plurality of bits is sensed prior to generating the magnetic field. The resistance is again sensed after the magnetic field is generated and the data represented by the initial state of each bit is determined from the resistance change. A spin torque transfer current is then applied only to those magnetoresistive bits having a resistance different from prior to the magnetic field being applied.

Abstract: A memory has a pre-amplifier for generating an output signal and a reference signal. The memory includes a comparator for comparing the output signal to the reference signal. The comparator includes a bias stage for generating a bias signal, wherein the bias signal is an average of the output signal and the reference signal. The comparator further includes a first output stage for generating a first comparator output signal by comparing the output signal and the bias signal. The comparator further includes a second output stage for generating a second comparator output signal by comparing the reference signal and the bias signal.

Abstract: A memory has a pre-amplifier for generating an output signal and a reference signal. The memory includes a comparator for comparing the output signal to the reference signal. The comparator includes a bias stage for generating a bias signal, wherein the bias signal is an average of the output signal and the reference signal. The comparator further includes a first output stage for generating a first comparator output signal by comparing the output signal and the bias signal. The comparator further includes a second output stage for generating a second comparator output signal by comparing the reference signal and the bias signal.

Abstract: The present invention discloses a all-terrain cooler chest comprising a pair of wheels and a towing handle for portability. A back extension of storage space is provided behind the wheels that is designed to maintain the clearance from the ground for the underside of the cooler when the cooler is tilted up for towing with a handle. The invention optimizes storage space while providing ground clearance when the cooler is towed by an individual user.

Abstract: A memory device, such an MRAM device, includes self-healing reference bits (104) associated with a set of array bits (102). The memory performs an error detection step (e.g., using an error-correction coding (ECC) algorithm, to detect the presence of a set of errors within the data bits. One of the reference bits (104) is toggled to a different state if an error count is greater than a predetermined threshold. If the set of errors remains unchanged when subsequently read, the reference bit (104) is toggled back to its original state.

Abstract: A magnetoresistive random access memory (MRAM) avoids difficulties with write disturb by electrically isolating the portion of the array with data from the portion with reference signals while providing fast read speeds by simultaneously enabling the word line having the reference cells and the selected word line. For high speed accessing it is difficult to completely stabilize a precharge prior to beginning the next access. Accordingly, it is desirable for the reference cell and the selected cell to have the same response characteristics because no voltages are truly stationary during high speed accessing. This is achieved by simultaneous accessing and by having matched impedances. Thus, the voltage separation between the reference cell and the selected cell can be maintained even when both are moving even if they are moving in the same direction.

Abstract: An antifuse circuit provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse has been previously programmed to a low resistance state in response to a program voltage. A sense amplifier provides the resistance state signal. A plurality of reference magnetic tunnel junctions are coupled in parallel and to the sense amplifier, each having a resistance within a range to provide a collective resistance that can be determined by the sense amplifier to differ from each resistance state of the MTJ antifuse. A write circuit selectively provides a current sufficient to create the program voltage when the write circuit is enabled to program the antifuse magnetic tunnel junction. Upon detecting a change in resistance in the MTJ antifuse, the write circuit reduces current supplied to the antifuse. Multiple antifuses may be programmed concurrently. Gate oxide thicknesses of transistors are adjusted for optimal performance.

Abstract: An antifuse circuit provides on a per bit basis a signal that indicates whether an MTJ (magnetic tunnel junction) antifuse has been previously programmed to a low resistance state in response to a program voltage. A sense amplifier provides the resistance state signal. A plurality of reference magnetic tunnel junctions are coupled in parallel and to the sense amplifier, each having a resistance within a range to provide a collective resistance that can be determined by the sense amplifier to differ from each resistance state of the MTJ antifuse. A write circuit selectively provides a current sufficient to create the program voltage when the write circuit is enabled to program the antifuse magnetic tunnel junction. Upon detecting a change in resistance in the MTJ antifuse, the write circuit reduces current supplied to the antifuse. Multiple antifuses may be programmed concurrently. Gate oxide thicknesses of transistors are adjusted for optimal performance.

Abstract: A controller for a toggle memory that performs burst writes by reading a group of bits in the toggle memory and comparing each received data word of the burst with a portion of the group to determine which cells to toggle to enter the data of the burst write in the toggle memory. In one example the toggle memory includes magnetoresistive random access memory (MRAM) with cells using multiple free magnetic layers that toggle between states when subjected to a sequence of magnetic pulses along two directions. Because one read is performed for a group of data of the burst, the time needed to perform the burst write is reduced.

Abstract: An extrusion for use in a floor assembly including a load bearing horizontal portion and at least one horizontal support member in a substantially parallel horizontal plane, and a plurality of leg members extending downwardly from the load bearing horizontal portion. The extrusion also includes a tongue extending outwardly from a first outside surface thereof and a receiving portion provided at the second outside surface thereof that is sized and positioned to receive therein a tongue of a second extrusion forming a part of the floor assembly. The second outside surface also includes at least one aperture that is sized and positioned to receive therethrough at least one fastener for securing the extrusion to a rigid underlying support such as a plurality of wood joists.

Abstract: A magnetoresistive random access memory (MRAM) has separate read and write paths. This reduces the peripheral circuitry by not requiring switching between read and write functions on a particular line. By having the paths dedicated to either read signals or write signals, the voltage levels can be optimized for these functions. The select transistors, which are part of only the read function, may be of the low-voltage type because they do not have to receive the relatively higher voltages of the write circuitry. Similarly, the write voltages do not have to be degraded to accommodate the lower-voltage type transistors. The size of the overall memory is kept efficiently small while improving performance. The memory cells are grouped so that adjacent to groups are coupled to a common global bit line which reduces the space required for providing the capacitance-reducing group approach to memory cell selection.

Abstract: A circuit provides a stress voltage to magnetic tunnel junctions (MTJs), which comprise the storage elements of a magnetoresitive random access memory (MRAM), during an accelerated life test of the MRAM. The stress voltage is selected to provide a predetermined acceleration of aging compared to normal operation. A source follower circuit is used to apply a stress voltage to a subset of the memory cells at given point in time during the life test. The stress voltage is maintained at the desired voltage by a circuit that mocks the loading characteristics of the portion of the memory array being stressed. The result is a closely defined voltage applied to the MTJs so that the magnitude of the acceleration is well defined for all of the memory cells.

Abstract: A circuit and method for counteracting stray magnetic fields generated by write currents in an MRAM memory reuses the write current in adjoining write columns via a current redistribution bus at a first end of the write lines. A first switch connected to a second end of each write line controls the write current in the write line. If the first switch is not conductive, a second switch connects the second end of the write line to a reference voltage terminal. For write lines located at sub-array edges, a predetermined amount of spacing may be used to avoid magnetic field disturbance in an adjacent sub-array. The number of spaces required can be minimized by specific activation of write line switches.

Abstract: An extrusion for use in a floor assembly that is secured to a rigid underlying support. The extrusion has an exposed surface and a base section underlying the exposed surface. The extrusion is made of a first extruded material, preferably a hard polyvinyl chloride (PVC) and more preferably a co-extrusion of a recycled polyvinyl chloride substrate covered by a weatherable polyvinyl chloride capstock. The base section has at least a portion thereof including a second extruded material which is interposed between the plastic extrusion and the rigid underlying support when the plastic extrusion is secured to the rigid underlying support. The second extruded material resists undesired squeaking sounds from occurring when weight bearing loads move on the floor assembly. A floor assembly adapted to be secured to an underlying rigid support and a complete floor assembly and rigid underlying support are also disclosed.

Abstract: An extrusion for use in a floor assembly that is secured to a rigid underlying support. The extrusion has an exposed surface and a base section underlying the exposed surface. The extrusion is made of a first extruded material, preferably a hard polyvinyl chloride (PVC) and more preferably a co-extrusion of a recycled polyvinyl chloride substrate covered by a weatherable polyvinyl chloride capstock. The base section has at least a portion thereof including a second extruded material which is interposed between the plastic extrusion and the rigid underlying support when the plastic extrusion is secured to the rigid underlying support. The second extruded material resists undesired squeaking sounds from occurring when weight bearing loads move on the floor assembly. A floor assembly adapted to be secured to an underlying rigid support and a complete floor assembly and rigid underlying support are also disclosed.

Abstract: A method for producing an extrusion having a wood grain appearance. A first extruder including a die and a second extruder which includes a housing and a screw is provided, the screw having a portion disposed within the housing and a portion projecting outwardly from the housing. The second extruder is secured to the die of the first extruder by a pipe, the pipe receiving the outwardly projecting portion of the second extruder screw. A first material is extruded through the first extruder die to produce an extrusion and a second material is introduced into the second extruder. The second material is delivered through the second extruder and the pipe means to bond the second material to at least a portion of the surface of the extrusion to provide an extrusion with at least a portion of its surface having a wood grain appearance. An associated second extruder as well as an apparatus for producing an extrusion having a wood grain appearance is also provided.