Abstract: A mechanism is provided for optimizing semiconductor packing in a three-dimensional (3D) very-large-scale integration (VLSI) device. The 3D VLSI device comprises a processor layer coupled, via a first set of coupling devices, to at least one signaling and input/output (I/O) layer. The 3D VLSI device further comprises a power delivery layer coupled, via a second set of coupling devices, to the processor layer. In the 3D VLSI device the power delivery layer is dedicated to only delivering power and does not provide data communication signals to the elements of the three-dimensional VLSI device, and the at least one signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

Abstract: A method for manufacturing a filling in a gap region between a first surface and a second surface includes applying a suspension comprising a carrier fluid and filler particles in the gap region between the first and the second surface; and withholding filler particles by a barrier element in the gap region to form a path of attached filler particles between the first surface and the second surface.

Abstract: A coolant pumping system for a mobile electronic system includes a coolant reservoir containing a coolant, a heat exchanger member fluidly connected to the coolant reservoir, and a mass moveably mounted to the mobile electronic system. The mass is moved along at least one axis in response to at least one of accelerations and orientation changes of the mobile electronic system. The coolant system further includes a force transfer member operatively connected between the mass and the coolant reservoir. The force transfer member urges the coolant from the coolant reservoir through the heat exchanger member in response to movements of the mass. A gear member is operatively connected between the mass and the force transfer member.

Abstract: An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TeCIBQ, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.

Abstract: A mechanism is provided for optimizing semiconductor packing in a three-dimensional (3D) very-large-scale integration (VLSI) device. The 3D VLSI device comprises a processor layer coupled, via a first set of coupling devices, to at least one signaling and input/output (I/O) layer. The 3D VLSI device further comprises a power delivery layer coupled, via a second set of coupling devices, to the processor layer. In the 3D VLSI device the power delivery layer is dedicated to only delivering power and does not provide data communication signals to the elements of the three-dimensional VLSI device, and the at least one signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

Abstract: An integrated circuitry structure includes at least first and second regions. An optical layer includes optical waveguides. A heat-conductive material transfers heat from at least the second region through the optical layer to a heat sink.

Abstract: An integrated device includes at least one heat generating component which generates heat when operated, at least one temperature-sensitive component, and one or more hollow insulation regions arranged between the at least one heat generating component and the at least one temperature-sensitive component. The hollow insulation region may be provided as a vacuum gap.

Abstract: An integrated circuit coupling device includes an integrated circuit package with N integrated circuit layers (L1-LN) arranged as a 3D stack; and a data transmission medium with n data transmission layers (l1-ln), wherein n?1 and N?2, and wherein the N integrated circuit layers are electrically connectable to the n data transmission layers.

Abstract: An integrated circuit coupling device includes an integrated circuit package; and an optical data transmission medium connected to the integrated circuit package, and comprising a movable coolant, adapted to remove heat from the integrated circuit package, in operation.

Abstract: A mechanism is provided for integrated power delivery and distribution via a heat sink. The mechanism comprises a processor layer coupled to a signaling and input/output (I/O) layer via a first set of coupling devices and a heat sink coupled to the processor layer via a second set of coupling devices. In the mechanism, the heat sink comprises a plurality of grooves on one face, where each groove provides either a path for power or a path for ground to be delivered to the processor layer. In the mechanism, the heat sink is dedicated to only delivering power and does not provide data communication signals to the elements of the mechanism and the signaling and I/O layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

Abstract: A mechanism is provided for a thermal power plane that delivers power and constitutes minimal thermal resistance. The mechanism comprises a processor layer coupled, via a first set of coupling devices, to a signaling and input/output (I/O) layer and a power delivery layer coupled, via a second set of coupling devices, to the processor layer. In the mechanism, the power delivery layer is dedicated to only delivering power and does not provide data communication signals to the elements of the mechanism. In the mechanism, the power delivery layer comprises a plurality of conductors, a plurality of insulating materials, one or more ground planes, and a plurality of through laminate vias. In the mechanism, the signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

Abstract: A mechanism is provided for optimizing semiconductor packing in a three-dimensional (3D) very-large-scale integration (VLSI) device. The 3D VLSI device comprises a processor layer coupled, via a first set of coupling devices, to at least one signaling and input/output (I/O) layer. The 3D VLSI device further comprises a power delivery layer coupled, via a second set of coupling devices, to the processor layer. In the 3D VLSI device the power delivery layer is dedicated to only delivering power and does not provide data communication signals to the elements of the three-dimensional VLSI device, and the at least one signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

Abstract: An assembly includes a chip including an integrated circuit, a casing including an integrated circuit and having an upper portion formed on a side of the chip and lower portion formed on another side of the chip, plural through-wafer vias (TWVs) for electrically connecting the integrated circuit of the chip and the integrated circuit of the casing, and a card connected to the casing for electrically connecting the casing to a system board.

Abstract: The present invention relates to methods and apparatus for producing an electronic device, such as an organic light-emitting diode (OLED), having an electrode with enhanced injection properties. An example method according to the invention comprises the steps of providing an electrode, depositing a first layer of molecular charge transfer material on the electrode, and cross-linking the molecular charge transfer material. With the method according to the invention, an OLED with higher light efficiency, lower operating voltage, and longer lifetime can be produced. The present invention further relates to an electronic device having an electrode with enhanced injection properties.

Abstract: An electronic component system cabinet includes a plurality of electronic component system bays, and a plurality of electronic component systems mounted in respective ones of the plurality of electronic component system bays. The electronic component system cabinet further includes a cooling system including a plurality of coolant reservoirs. Each of the plurality of coolant reservoirs is associated with at least one of the plurality of electronic component system bays. The cooling system further includes at least one pump fluidly connected to each of the plurality of coolant reservoirs. The at least one pump is selectively operated to circulate a supply of coolant to each of the plurality of coolant reservoirs.

Abstract: An electronic device having an electrode with enhanced injection properties comprising a first electrode and a first layer of cross-linked molecular charge transfer material on the first electrode. The cross-linked molecular charge transfer material may be an acceptor, which may consist of at least one of: TNF, TN9(CN)2F, TeNF, TeCIBQ, TCNB, DCNQ, and TCAQ. The cross-linked molecular charge transfer material may also be a donor, which may consist of at least one of: Terpy, Ru(terpy)2 TTN, and crystal violet.

Abstract: An electronic component system cabinet includes a plurality of electronic component system bays, and a plurality of electronic component systems mounted in respective ones of the plurality of electronic component system bays. The electronic component system cabinet further includes a cooling system including a plurality of coolant reservoirs. Each of the plurality of coolant reservoirs is associated with at least one of the plurality of electronic component system bays. The cooling system further includes at least one pump fluidly connected to each of the plurality of coolant reservoirs. The at least one pump is selectively operated to circulate a supply of coolant to each of the plurality of coolant reservoirs.

Abstract: A coolant pumping system for a mobile electronic system includes a coolant reservoir containing a coolant, a heat exchanger member fluidly connected to the coolant reservoir, and a mass moveably mounted to the mobile electronic system. The mass is moved along at least one axis in response to at least one of accelerations and orientation changes of the mobile electronic system. The coolant system further includes a force transfer member operatively connected between the mass and the coolant reservoir. The force transfer member urges the coolant from the coolant reservoir through the heat exchanger member in response to movements of the mass.

Abstract: An assembly includes a chip including an integrated circuit, a casing including an integrated circuit and having an upper portion formed on a side of the chip and lower portion formed on another side of the chip, plural through-wafer vias (TWVs) for electrically connecting the integrated circuit of the chip and the integrated circuit of the casing, and a card connected to the casing for electrically connecting the casing to a system board.

Abstract: An assembly includes a chip including an integrated circuit, a casing including an integrated circuit and having an upper portion formed on a side of the chip and lower portion formed on another side of the chip, plural through-wafer vias (TWVs) for electrically connecting the integrated circuit of the chip and the integrated circuit of the casing, and a card connected to the casing for electrically connecting the casing to a system board.